lincmos programmable low-power operational ......title lincmos programmable low-power operational...

TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

� Input Offset Voltage Drift . . . Typically0.1 µV/Month, Including the First 30 Days

� Wide Range of Supply Voltages OverSpecified Temperature Range:

0°C to 70°C . . . 3 V to 16 V–40°C to 85°C . . . 4 V to 16 V–55°C to 125°C . . . 5 V to 16 V

� Single-Supply Operation

� Common-Mode Input Voltage RangeExtends Below the Negative Rail (C-Suffixand I-Suffix Types)

� Low Noise . . . 25 nV/√Hz Typically atf = 1 kHz (High-Bias Mode)

� Output Voltage Range Includes NegativeRail

� High Input Impedance . . . 1012 Ω Typ� ESD-Protection Circuitry

� Small-Outline Package Option AlsoAvailable in Tape and Reel

� Designed-In Latch-Up Immunity

description

The TLC271 operational amplifier combines awide range of input offset voltage grades with lowoffset voltage drift and high input impedance. Inaddition, the TLC271 offers a bias-select modethat allows the user to select the best combination of power dissipation and ac performance for a particularapplication. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offsetvoltage stability far exceeding the stability available with conventional metal-gate processes.

AVAILABLE OPTIONS

VIOmaxPACKAGE

TAVIOmaxAT 25°C SMALL OUTLINE

(D)CHIP CARRIER

(FK)CERAMIC DIP

(JG)PLASTIC DIP

(P)

2 mV TLC271BCD TLC271BCP0°C to 70°C

2 mV5 mV

TLC271BCDTLC271ACD — —

TLC271BCPTLC271ACP

10 mV TLC271CD TLC271CP

2 mV TLC271BID TLC271BIP–40°C to 85°C

2 mV5 mV

TLC271BIDTLC271AID — —

TLC271BIPTLC271AIP

10 mV TLC271ID TLC271IP

–55°C to 125°C 10 mV TLC271MD TLC271MFK TLC271MJG TLC271MP

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright 2001, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

1

2

3

4

8

7

6

5

OFFSET N1IN –IN +

GND

BIAS SELECTVDDOUTOFFSET N2

D, JG, OR P PACKAGE(TOP VIEW)

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NCVDDNCOUTNC

NCIN –NC

IN +NC

FK PACKAGE(TOP VIEW)

NC

OF

FS

ET

N1

NC

NC

NC

NC

GN

DN

C

NC – No internal connection

OF

FS

ET

N2

BIA

S S

ELE

CT

LinCMOS is a trademark of Texas Instruments.

TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

DEVICE FEATURES

PARAMETER†BIAS-SELECT MODE

UNITPARAMETER†HIGH MEDIUM LOW

UNIT

PD 3375 525 50 µWSR 3.6 0.4 0.03 V/µsVn 25 32 68 nV/√HzB1 1.7 0.5 0.09 MHz

AVD 23 170 480 V/mV† Typical at VDD = 5 V, TA = 25°C

description (continued)

Using the bias-select option, these cost-effective devices can be programmed to span a wide range ofapplications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades areavailable (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)low-offset version. The extremely high input impedance and low bias currents, in conjunction with goodcommon-mode rejection and supply voltage rejection, make these devices a good choice for newstate-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,without the power penalties of bipolar technology. General applications such as transducer interfacing, analogcalculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. Thedevices also exhibit low-voltage single-supply operation, making them ideally suited for remote andinaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-densitysystem applications.

The device inputs and output are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devicesas exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of – 55°C to 125°C.

bias-select feature

The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels dependingon the level of performance desired. The tradeoffs between bias levels involve ac performance and powerdissipation (see Table 1).

Table 1. Effect of Bias Selection on Performance

TYPICAL PARAMETER VALUESMODE

TYPICAL PARAMETER VALUESTA = 25°C, VDD = 5 V HIGH BIAS MEDIUM BIAS LOW BIAS

UNITTA = 25 C, VDD = 5 VRL = 10 kΩ RL = 100 kΩ RL = 1 MΩ

PD Power dissipation 3.4 0.5 0.05 mW

SR Slew rate 3.6 0.4 0.03 V/µsVn Equivalent input noise voltage at f = 1 kHz 25 32 68 nV/√HzB1 Unity-gain bandwidth 1.7 0.5 0.09 MHz

φm Phase margin 46° 40° 34°AVD Large-signal differential voltage amplification 23 170 480 V/mV




bias selection

Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). Formedium-bias applications, it is recommended that the bias select pin be connected to the midpoint between thesupply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supplyapplications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use oflarge-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,large-value resistors used in conjunction with a large-value capacitor require significant time to charge up tothe supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is withinthe voltages specified in Figure 1.

VDD

1 MΩ

1 MΩ

0.01 µF

Low

Medium

High

To the BiasSelect Pin

BIAS MODEBIAS-SELECT VOLTAGE

(single supply)

Low

Medium

High

VDD1 V to VDD – 1 V

GND

Figure 1. Bias Selection for Single-Supply Applications

high-bias mode

In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gainbandwidth is typically greater than 1 MHz.

medium-bias mode

The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of thatconsumed by bipolar devices.



low-bias mode

In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low powerconsumption, and high differential voltage gain.

ORDER OF CONTENTS

TOPIC BIAS MODE

schematic all

absolute maximum ratings all

recommended operating conditions all

electrical characteristicsoperating characteristicstypical characteristics

high(Figures 2 – 33)


medium(Figures 34 – 65)


low(Figures 66 – 97)

parameter measurement information all

application information all

equivalent schematic

P3

P1

R1IN –

IN +

P2 R2

P4R6

N5

R5 C1

N3

N2N1

R3 D1

R4

D2N4

OFFSETN1 N2

OFFSET OUT GND

R7

N6

BIASSELECT

N10

N7

N9

N13

N12

N11

P12

P11

P10

P7A P8

P9A

P9B

P7BP6BP6A

P5

VDD




absolute maximum ratings over operating free-air temperature (unless otherwise noted)†

Supply voltage, VDD (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input) – 0.3 V to VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix – 40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix – 55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range – 65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.2. Differential voltages are at IN+ with respect to IN–.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C

POWER RATINGDERATING FACTORABOVE TA = 25°C

TA = 70°CPOWER RATING



D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW

FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW

recommended operating conditions

C SUFFIX I SUFFIX M SUFFIXUNIT

MIN MAX MIN MAX MIN MAXUNIT

Supply voltage, VDD 3 16 4 16 5 16 V

Common mode input voltage VICVDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5

VCommon-mode input voltage, VICVDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5

V

Operating free-air temperature, TA 0 70 –40 85 –55 125 °C



HIGH-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TEST †TLC271C, TLC271AC, TLC271BC

PARAMETERTEST

CONDITIONS TA† VDD = 5 V VDD = 10 V UNITCONDITIONS A

MIN TYP MAX MIN TYP MAX

TLC271C25°C 1.1 10 1.1 10

TLC271C

VO = 1 4 VFull range 12 12

VIO Input offset voltage TLC271AC

VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AC IC

,RS = 50 Ω,R 10 kΩ

Full range 6.5 6.5mV

TLC271BCRL = 10 kΩ 25°C 0.34 2 0.39 2

TLC271BCFull range 3 3

αVIOAverage temperature coefficientof input offset voltage

25°C to70°C 1.8 2 µV/°C

IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD

,VIC = VDD/2 70°C 7 300 7 300

pA

IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD

,VIC = VDD/2 70°C 40 600 50 600

pA

Common mode input voltage

25°C–0.2

to4

–0.3to

4.2

–0.2to9

–0.3to

9.2V

VICRCommon-mode input voltagerange (see Note 5)

Full range–0.2

to3.5

–0.2to

8.5V

V 100 V25°C 3.2 3.8 8 8.5

VOH High-level output voltageVID = 100 mV,RL = 10 kΩ

0°C 3 3.8 7.8 8.5 VRL = 10 kΩ

70°C 3 3.8 7.8 8.4

V 100 V25°C 0 50 0 50

VOL Low-level output voltageVID = –100 mV,IOL = 0

0°C 0 50 0 50 mVIOL = 0

70°C 0 50 0 50

L i l diff ti l R 10 kΩ25°C 5 23 10 36

AVDLarge-signal differentialvoltage amplification

RL = 10 kΩ,See Note 6

0°C 4 27 7.5 42 V/mVvoltage am lification See Note 6

70°C 4 20 7.5 32

25°C 65 80 65 85

CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 84 60 88 dB

70°C 60 85 60 88

S l lt j ti ti V 5 V t 10 V25°C 65 95 65 95

kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)

VDD = 5 V to 10 VVO = 1 4 V

0°C 60 94 60 94 dB(∆VDD/∆VIO) VO = 1.4 V

70°C 60 96 60 96

II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25°C –1.4 –1.9 µA

VO = VDD/2,25°C 675 1600 950 2000

IDD Supply currentVO VDD/2,VIC = VDD/2,N l d

0°C 775 1800 1125 2200 µANo load 70°C 575 1300 750 1700

† Full range is 0°C to 70°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.




HIGH-BIAS MODE


TEST †TLC271I, TLC271AI, TLC271BI

PARAMETERTEST



TLC271I25°C 1.1 10 1.1 10

TLC271I


VIO Input offset voltage TLC271AI

VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AI IC

,RS = 50 Ω,R 10 kΩ

Full range 7 7mV

TLC271BIRL = 10 kΩ 25°C 0.34 2 0.39 2

TLC271BIFull range 3.5 3.5


25°C to 85°C 1.8 2 µV/°C


,VIC = VDD/2 85°C 24 1000 26 1000

pA


,VIC = VDD/2 85°C 200 2000 220 2000

pA

VICRCommon-mode input

25°C–0.2

to4

–0.3to

4.2

–0.2to9

–0.3to

9.2V

VICR voltage range (see Note 5)

Full range–0.2

to3.5

–0.2to

8.5V

V 100 V25°C 3.2 3.8 8 8.5


–40°C 3 3.8 7.8 8.5 VRL = 10 kΩ

85°C 3 3.8 7.8 8.5

V 100 V25°C 0 50 0 50


–40°C 0 50 0 50 mVIOL = 0

85°C 0 50 0 50

L i l diff ti l R 10 kΩ25°C 5 23 10 36



–40°C 3.5 32 7 46 V/mVvoltage am lification See Note 6

85°C 3.5 19 7 31

25°C 65 80 65 85

CMRR Common-mode rejection ratio VIC = VICRmin –40°C 60 81 60 87 dB

85°C 60 86 60 88

S l lt j ti ti V 5 V t 10 V25°C 65 95 65 95


VDD = 5 V to 10 VVO = 1 4 V

–40°C 60 92 60 92 dB(∆VDD/∆VIO) VO = 1.4 V

85°C 60 96 60 96


VO = VDD/2,25°C 675 1600 950 2000


–40°C 950 2200 1375 2500 µANo load 85°C 525 1200 725 1600

† Full range is –40°C to 85°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.




HIGH-BIAS MODE


TEST †TLC271M

PARAMETERTEST



VO = 1.4 V, 25°C 1 1 10 1 1 10VIO Input offset voltage

VO = 1.4 V,VIC = 0 V,

25°C 1.1 10 1.1 10mVVIO Input offset voltage IC

,RS = 50 Ω, Full range 12 12

mVS

RL = 10 kΩFull range 12 12


25°C to 125°C 2.1 2.2 µV/°C


,VIC = VDD/2 125°C 1.4 15 1.8 15 nA


,VIC = VDD/2 125°C 9 35 10 35 nA

VICRCommon-mode input voltage

25°C0to4

–0.3to

4.2

0to9

–0.3to

9.2V

VICRg

range (see Note 5)

Full range0to

3.5

0to

8.5V

V 100 V25°C 3.2 3.8 8 8.5


–55°C 3 3.8 7.8 8.5 VRL = 10 kΩ

125°C 3 3.8 7.8 8.4

V 100 V25°C 0 50 0 50


–55°C 0 50 0 50 mVIOL = 0

125°C 0 50 0 50

L i l diff ti l R 10 kΩ25°C 5 23 10 36



–55°C 3.5 35 7 50 V/mVvoltage am lification See Note 6

125°C 3.5 16 7 27

25°C 65 80 65 85


125°C 60 84 60 86

S l lt j ti ti V 5 V t 10 V25°C 65 95 65 95


VDD = 5 V to 10 VVO = 1 4 V

–55°C 60 90 60 90 dB(∆VDD/∆VIO) VO = 1.4 V

125°C 60 97 60 97


VO = VDD/2,25°C 675 1600 950 2000


–55°C 1000 2500 1475 3000 µANo load 125°C 475 1100 625 1400






HIGH-BIAS MODE

operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER TEST CONDITIONS TA

TLC271C, TLC271AC,TLC271BC UNITA

MIN TYP MAX

25°C 3.6

VI(PP) = 1 V 0°C 4

SR Slew rate at unity gainRL = 10 kΩ,CL 20 pF

( )70°C 3

V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 2.9

V/µsSee Figure 98

VI(PP) = 2.5 V 0°C 3.1( )70°C 2.5

V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HzVn Equivalent input noise voltage

,See Figure 99

S , 25°C 25 nV/√Hz

V V C 20 F25°C 320

BOM Maximum output-swing bandwidthVO = VOH ,RL = 10 kΩ

CL = 20 pF,See Figure 98

0°C 340 kHzRL = 10 kΩ, See Figure 98

70°C 260

V 10 V C 20 F25°C 1.7

B1 Unity-gain bandwidthVI = 10 mV,See Figure 100

CL = 20 pF, 0°C 2 MHzSee Figure 100

70°C 1.3

V 10 mV f B25°C 46°

φm Phase marginVI = 10 mV,CL = 20 pF,

f = B1,See Figure 100 0°C 47°CL = 20 F, See Figure 100

70°C 44°




MIN TYP MAX

25°C 5.3

VI(PP) = 1 V 0°C 5.9


( )70°C 4.3


V/µsSee Figure 98

VI(PP) = 5.5 V 0°C 5.1( )70°C 3.8


,See Figure 99

S , 25°C 25 nV/√Hz

V V C 20 F25°C 200

BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ



70°C 140

V 10 V C 20 F25°C 2.2


CL = 20 pF, 0°C 2.5 MHzSee Figure 100

70°C 1.8

f B V 10 mV25°C 49°

φm Phase marginf = B1,CL = 20 pF,

VI = 10 mV,See Figure 100 0°C 50°CL = 20 F, See Figure 100

70°C 46°



HIGH-BIAS MODE



TLC271I, TLC271AI,TLC271BI UNITA

MIN TYP MAX

25°C 3.6

VI(PP) = 1 V –40°C 4.5

SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF

( )85°C 2.8


V/µsSee Figure 98

VI(PP) = 2.5 V –40°C 3.5( )85°C 2.3

V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HVn Equivalent input noise voltage

,See Figure 99

S , 25°C 25 nV/√Hz

V V C 20 F25°C 320



–40°C 380 kHzRL = 10 kΩ, See Figure 98

85°C 250

V 10 V C 20 F25°C 1.7


CL = 20 pF, –40°C 2.6 MHzSee Figure 100

85°C 1.2

V 10 mV f B25°C 46°

φm Phase marginVI = 10 mV,CL = 20 pF

f = B1,See Figure 100 –40°C 49°CL = 20 F, See Figure 100

85°C 43°




MIN TYP MAX

25°C 5.3

VI(PP) = 1 V –40°C 6.8


( )85°C 4


V/µsSee Figure 98

VI(PP) = 5.5 V –40°C 5.8( )85°C 3.5


,See Figure 99

S , 25°C 25 nV/√Hz

V V C 20 F25°C 200




85°C 130

V 10 V C 20 F25°C 2.2



85°C 1.7

V 10 mV f B25°C 49°


f= B1,See Figure 100 –40°C 52°CL = 20 F, See Figure 100

85°C 46°




HIGH-BIAS MODE


PARAMETER TEST CONDITIONS TATLC271M

UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT

25°C 3.6

VI(PP) = 1 V –55°C 4.7


( )125°C 2.3


V/µsSee Figure 98

VI(PP) = 2.5 V –55°C 3.7( )125°C 2


,See Figure 99

S , 25°C 25 nV/√Hz

V V C 20 F25°C 320




125°C 230

V 10 V C 20 F25°C 1.7



125°C 1.1

V 10 mV f B25°C 46°

φm Phase marginVI = 10 mV,CL = 20 pF,


125°C 41°




25°C 5.3

VI(PP) = 1 V –55°C 7.1


( )125°C 3.1


V/µsSee Figure 98

VI(PP) = 5.5 V –55°C 6.1( )125°C 2.7


,See Figure 99

S , 25°C 25 nV/√Hz

V V C 20 F25°C 200




125°C 110

V 10 V C 20 F25°C 2.2



125°C 1.6

f B V 10 mV25°C 49°

φm Phase marginf = B1,CL = 20 pF,

VI = 10 mV,See Figure 100 –55°C 52°CL = 20 F, See Figure 100

125°C 44°



TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Table of Graphs

FIGURE

VIO Input offset voltage Distribution 2, 3

αVIO Temperature coefficient Distribution 4, 5

vs High-level output current 6, 7VOH High-level output voltage

vs High level out ut currentvs Supply voltage

6, 78OH g g y g

vs Free-air temperature 9

vs Common-mode input voltage 10, 11

VOL Low level output voltage

vs Common mode in ut voltagevs Differential input voltage

10, 1112VOL Low-level output voltage

gvs Free-air temperature 13vs Low-level output current 14, 15

vs Supply voltage 16AVD Large-signal differential voltage amplification

vs Su ly voltagevs Free-air temperature

1617VD g g g

vs Frequency 28, 29

IIB Input bias current vs Free-air temperature 18

IIO Input offset current vs Free-air temperature 18

VIC Common-mode input voltage vs Supply voltage 19

IDD Supply currentvs Supply voltage 20

IDD Supply currenty g


SR Slew ratevs Supply voltage 22

SR Slew ratey g


Bias-select current vs Supply voltage 24

VO(PP) Maximum peak-to-peak output voltage vs Frequency 25

B1 Unity gain bandwidthvs Free-air temperature 26

B1 Unity-gain bandwidth vs Supply voltage 27

AVD Large-signal differential voltage amplification vs Frequency 28, 29

vs Supply voltage 30φm Phase margin


3031φm g

vs Capacitive load 32

Vn Equivalent input noise voltage vs Frequency 33

Phase shift vs Frequency 28, 29




TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†

Figure 2

– 50

Per

cen

tag

e o

f U

nit

s –

%

VIO – Input Offset Voltage – mV5

60

– 4 – 3 – 2 – 1 0 1 2 3 4

10

20

30

40

50

DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE

TA = 25°CP Package

ÎÎÎÎÎÎÎÎÎÎÎÎ753 Amplifiers Tested From 6 Wafer LotsVDD = 5 V

Figure 3

50

40

30

20

10

43210– 1– 2– 3– 4

60

5P

erce

nta

ge

of

Un

its

– %

0– 5


VIO – Input Offset Voltage – mV

P Package

TA = 25°CVDD = 10 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

753 Amplifiers Tested From 6 Wafer Lots

Figure 4

50

40

30

20

10

86420– 2– 4– 6– 8

60

10αVIO – Temperature Coefficient – µV/°C

Per

cen

tag

e o

f U

nit

s –

%

0– 10


TEMPERATURE COEFFICIENT

P PackageTA = 25°C to 125°CVDD = 5 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


Outliers:

ÎÎÎÎÎ(1) 20.5 µV/°C

Figure 5

– 100

Per

cen

tag

e o

f U

nit

s –

%

10

60

– 8 – 6 – 4 – 2 0 2 4 6 8

10

20

30

40

50



TA = 25°C to 125°C

Outliers:P Package

ÎÎÎÎÎ(1) 21.2 µV/°C


324 Amplifiers Tested From 8 Wafer lotsVDD = 10 V

αVIO – Temperature Coefficient – µV/°C

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.




Figure 6

00

VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

IOH – High-Level Output Current – mA– 10

5

– 2 – 4 – 6 – 8

1

2

3

4TA = 25°CVID = 100 mV

VDD = 5 V

VDD = 4 V

VDD = 3 V

HIGH-LEVEL OUTPUT VOLTAGEvs

HIGH-LEVEL OUTPUT CURRENT

ÁÁÁÁÁÁÁÁÁ

V OH

Figure 7

00

IOH – High-Level Output Current – mA

– 40

16

– 10 – 20 – 30

2

4

6

8

10

12

14

VDD = 16 V

ÎÎÎÎÎÎÎÎÎÎ

VDD = 10 V

VID = 100 mVTA = 25°C



VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁÁÁ

V OH

– 5 – 15 – 25 – 35

Figure 8

0VDD – Supply Voltage – V

162 4 6 8 10 12 14

14

12

10

8

6

4

2

16

0

VID = 100 mVRL = 10 kΩTA = 25°C


SUPPLY VOLTAGE

VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁV

OH

Figure 9

– 1.7

– 1.8

– 1.9

– 2

– 2.1

– 2.2

– 2.3

1007550200– 25– 50

VDD – 1.6

125TA – Free-Air Temperature – °C

– 2.4– 75

IOH = –5 mAVID = 100 mA

VDD = 5 V

VDD = 10 V


FREE-AIR TEMPERATURE

VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁV

OH






Figure 10

0300

VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

VIC – Common-Mode Input Voltage – V4

700

1 2 3

400

500

600

TA = 25°CIOL = 5 mAVDD = 5 V

VID = –1 V

LOW-LEVEL OUTPUT VOLTAGEvs

COMMON-MODE INPUT VOLTAGE

650

550

450

350ÁÁÁÁ

VO

L

ÎÎÎÎÎÎÎÎÎÎÎÎ

VID = –100 mV

Figure 11

2500

VIC – Common-Mode Input Voltage – V

300

350

400

450

500

2 4 6 8 10

VDD = 10 VIOL = 5 mATA = 25°C

VID = –1 V

VID = –2.5 V

VID = –100 mV



1 3 5 7 9

VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁÁÁ

VO

L

Figure 12

0VID – Differential Input Voltage – V

– 10– 2 – 4 – 6 – 8

800

700

600

500

400

300

200

100

0

IOL = 5 mAVIC = VID/2TA = 25°C

VDD = 10 V


DIFFERENTIAL INPUT VOLTAGE

VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁ

VO

L

– 1 – 3 – 5 – 7 – 9

ÎÎÎÎÎÎÎÎ

VDD = 5 V

Figure 13

– 750

TA – Free-Air Temperature – °C125

900

– 50 – 25 0 25 50 75 100

100

200

300

400

500

600

700

800VIC = 0.5 VVID = –1 VIOL = 5 mA



VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁ

VO

L

ÎÎÎÎÎÎÎÎ

VDD = 10 V

ÎÎÎÎVDD = 5 V





Figure 14


LOW-LEVEL OUTPUT CURRENT

0IOL – Low-Level Output Current – mA

1

80

1 2 3 4 5 6 7

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9VID = –1 VVIC = 0.5 VTA = 25°C

VDD = 5 V

VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁ

VO

L

ÎÎÎÎÎÎÎÎ

VDD = 3 V

ÎÎÎÎVDD = 4 V

Figure 15


3

300

5 10 15 20 25

0.5

1

1.5

2

2.5 TA = 25°CVIC = 0.5 VVID = –1 V

VDD = 10 V

VDD = 16 V



VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁÁÁ

VO

L

Figure 16

0

60

160

2 4 6 8 10 12 14

10

20

30

40

50

VDD – Supply Voltage – V

85°C

125°C

TA = – 55°CÎÎÎÎÎÎÎÎ

RL = 10 kΩ

LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION

vsSUPPLY VOLTAGE

ÎÎÎÎÎÎ

0°C

ÎÎÎÎÎÎ

25°C

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

– V

/mV

Figure 17

– 75TA – Free-Air Temperature – °C

50

1250

– 50 – 25 0 25 50 75 100

5

10

15

20

25

30

35

40

45

VDD = 5 V

VDD = 10 V


vsFREE-AIR TEMPERATURE

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

– V

/mV


RL = 10 kΩ






Figure 18

0.1125

10000

45 65 85 105

1

10

100

1000


INPUT BIAS CURRENT AND INPUT OFFSETCURRENT


ÁÁÁÁÁÁÁÁÁÁÁÁ

VDD = 10 VVIC = 5 VSee Note A

ÎÎÎÎ

IIB

ÎÎÎÎ

IIO

IIB a

nd

IIO

– In

pu

t B

ias

and

IBII I

OIn

pu

t O

ffse

t C

urr

ents

– n

A

NOTE A: The typical values of input bias current and input offsetcurrent below 5 pA were determined mathematically.

Figure 19


16

160

2 4 6 8 10 12 14

2

4

6

8

10

12

14TA = 25°C

COMMON-MODE INPUT VOLTAGE(POSITIVE LIMIT)

vsSUPPLY VOLTAGE

–

Co

mm

on

-Mo

de

Inp

ut

Vo

ltag

e –

VV

IC

Figure 20

0

IDD

– S

up

ply

Cu

rren

t –

mA


2.5

160

2 4 6 8 10 12 14

0.5

1

1.5

2 TA =–55°C

25°C

70°C

125°C

SUPPLY CURRENTvs

SUPPLY VOLTAGE

ÁÁÁÁÁÁÁÁÁ

DD

I

ÎÎÎ0°C

ÎÎÎÎÎÎÎÎ

VO = VDD/2No Load

Figure 21

– 75TA – Free-Air Temperature – °C

2

1250

0.5

1

1.5

– 50 – 25 0 25 50 75 100

VDD = 10 V

VDD = 5 V

SUPPLY CURRENTvs


IDD

– S

up

ply

Cu

rren

t –

mA

ÁÁÁÁÁÁ

DD

I


VO = VDD/2No Load





Figure 22

TA = 25°CSee Figure 98

AV = 1VI(PP) = 1 VRL = 10 kΩCL = 20 pF

8

7

6

5

4

3

2

1

14121086420


SR

– S

lew

Rat

e –

V/ u

s

0

SLEW RATEvs

SUPPLY VOLTAGE

sµ

Figure 23

VDD = 10 V

VI(PP) = 1 VVDD = 5 V

RL = 10 kΩAV = 1

See Figure 99CL = 20 pF

–750

1

2

3

4

5

6

7

8

1007550250–25–50 125TA – Free-Air Temperature – °C

SLEW RATEvs


SR

– S

lew

Rat

e –

V/ u

s sµ


VDD = 10 VÎÎÎÎÎÎÎÎÎÎ

VI(PP) = 5.5 V

ÎÎÎÎVI(PP) = 1 V


VDD = 5 V


VI(PP) = 2.5 V

Figure 24

VI(SEL) = 0TA = 25°C

– 2.4

– 1.8

– 1.2

– 0.6

14121086420

16

– 3

VDD – Supply Voltage – V0

BIAS-SELECT CURRENTvs

SUPPLY VOLTAGE

– 2.7

– 2.1

– 1.5

– 0.9

– 0.3

Bia

s-S

elec

t C

urr

ent

– u

a Aµ

Figure 25

ÎÎÎÎÎÎÎÎ

VDD = 5 V

1000100

9

8

7

6

5

4

3

2

1

010000

10

f – Frequency – kHz10

MAXIMUM PEAK-TO-PEAK OUTPUTVOLTAGE

vsFREQUENCY

ÎÎÎÎÎÎÎÎ

TA = 125°C

ÎÎÎÎTA = 25°CÎÎÎÎÎÎÎÎ

TA = 55°C

ÎÎÎÎÎÎÎÎ

VDD = 10 V

ÎÎÎÎRL = 10 kΩÎÎÎÎÎÎÎÎÎÎ

See Figure 98– M

axim

um

Pea

k-to

-Pea

k O

utp

ut

Vo

ltag

e –

VV O

(PP

)






Figure 26

See Figure 100CL = 20 pFVI = 10 mVVDD = 5 V

2.5

2

1.5

1007550250– 25– 501

125

3

TA – Free-Air Temperature – °C

B1

– U

nit

y-G

ain

Ban

dw

idth

– M

Hz

– 75

UNITY-GAIN BANDWIDTHvs


B1

Figure 27

VI = 10 mVCL = 20 pFTA = 25°CSee Figure 100

2

1.5

14121086421

16

2.5



SUPPLY VOLTAGE

B1

– U

nit

y-G

ain

Ban

dw

idth

– M

Hz

B1

Phase Shift

AVD

VDD = 5 VRL = 10 kΩTA = 25°C

Ph

ase

Sh

ift

106

105

104

103

102

101

1

1 M100 k10 k1 k1000.1

10 Mf – Frequency – Hz

10

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

107

150°

120°

90°

60°

30°

0°

180°

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

Figure 28





Phase Shift

AVD

TA = 25°CRL = 10 kΩVDD = 10 V

Ph

ase

Sh

ift

150°

120°

90°

60°

30°

0°

180°

106

105

104

103

102

101

1

1 M100 k10 k1 k1000.1


10

LARGE-SCALE DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

107A

VD

– L

arg

e-S

ign

al D

iffe

ren

tial

ÁÁÁÁA

VD

Vo

ltag

e A

mp

lific

atio

n

Figure 29

Figure 30

0

m –

Ph

ase

Mar

gin


53°

162 4 6 8 10 12 14

47°

49°

51°

CL = 20 pFTA = 25°C

VI = 10 mV

See Figure 100

PHASE MARGINvs

SUPPLY VOLTAGE

46°

45°

48°

50°

52°

ÁÁÁÁ

mφ

Figure 31

– 75

50°

12540°

– 50 – 25 0 25 50 75 100

42°

44°

46°

48°

VDD = 5 V

CL = 20 pFVI = 10 mV

See Figure 100


PHASE MARGINvs


m –

Ph

ase

Mar

gin

ÁÁÁÁ

mφ






Figure 32

0CL – Capacitive Load – pF

50°

10025°

20 40 60 80

30°

35°

40°

45°See Figure 100

VI = 10 mVTA = 25°C

VDD = 5 mV

PHASE MARGINvs

CAPACITIVE LOAD

m –

Ph

ase

Mar

gin

ÁÁÁÁ

mφ

Figure 33

VN

– E

qu

ival

ent

Inp

ut

No

ise

Vo

ltag

e –

nV

/Hz

1f – Frequency – Hz

400

10000

100

200

300

10 100

EQUIVALENT NOISE VOLTAGEvs

FREQUENCY

Vn

ÁÁÁÁÁÁÁÁ

nV

/H

z

350

250

150

50

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VDD = 5 V

TA = 25°CRS = 20 Ω

See Figure 99




MEDIUM-BIAS MODE


†TLC271C, TLC271AC, TLC271BC

PARAMETER TEST CONDITIONS TA† VDD = 5 V VDD = 10 V UNITAMIN TYP MAX MIN TYP MAX

TLC271C25°C 1.1 10 1.1 10

TLC271CVO = 1 4 V

Full range 12 12


VO = 1.4 V,VIC = 0 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AC ICRS = 50 Ω,R 100 kΩ


TLC271BCRI = 100 kΩ 25°C 0.25 2 0.26 2


αVIOAverage temperature coefficient of input offset voltage

25°C to70°C 1.7 2.1 µV/°C


,VIC = VDD/2 70°C 7 300 7 300

pA


,VIC = VDD/2 70°C 40 600 50 600

pA


25°C–0.2

to4

–0.3to

4.2

–0.2to9

–0.3to

9.2V


Full range–0.2

to3.5

–0.2to

8.5V

V 100 V25°C 3.2 3.9 8 8.7


0°C 3 3.9 7.8 8.7 VRL = 100 kΩ

70°C 3 4 7.8 8.7

V 100 V25°C 0 50 0 50


0°C 0 50 0 50 mVIOL = 0

70°C 0 50 0 50

L i l diff ti l R 100 kΩ25°C 25 170 25 275



0°C 15 200 15 320 V/mVvoltage am lification See Note 6

70°C 15 140 15 230

25°C 65 91 65 94


70°C 60 92 60 94

S l lt j ti ti V 5 V t 10 V25°C 70 93 70 93


VDD = 5 V to 10 VVO = 1 4 V

0°C 60 92 60 92 dB(∆VDD/∆VIO) VO = 1.4 V

70°C 60 94 60 94

II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25°C –130 –160 nA

VO = VDD/2,25°C 105 280 143 300

IDD Supply currentVO VDD/2,VIC = VDD/2, 0°C 125 320 173 400 µANo load 70°C 85 220 110 280






MEDIUM-BIAS MODE



PARAMETERTEST

CONDITIONSTA† VDD = 5 V VDD = 10 V UNITCONDITIONS A


TLC271I25°C 1.1 10 1.1 10

TLC271IVO = 1 4 V

Full range 13 13



,RS = 50 Ω,R 100 kΩ

Full range 7 7mV

TLC271BIRL = 100 kΩ 25°C 0.25 2 0.26 2

TLC271BIFull range 3.5 3.5


25°C to85°C 1.7 2.1 µV/°C


,VIC = VDD/2 85°C 24 1000 26 1000

pA


,VIC = VDD/2 85°C 200 2000 220 2000

pA


25°C–0.2

to4

–0.3to

4.2

–0.2to9

–0.3to

9.2V


Full range–0.2

to3.5

–0.2to

8.5V

V 100 V25°C 3.2 3.9 8 8.7


–40°C 3 3.9 7.8 8.7 VRL = 100 kΩ

85°C 3 4 7.8 8.7

V 100 V25°C 0 50 0 50


–40°C 0 50 0 50 mVIOL = 0

85°C 0 50 0 50

L i l diff ti l R 100 kΩ25°C 25 170 25 275



–40°C 15 270 15 390 V/mVvoltage am lification See Note 6

85°C 15 130 15 220

25°C 65 91 65 94


85°C 60 90 60 94

S l lt j ti ti V 5 V t 10 V25°C 70 93 70 93


VDD = 5 V to 10 VVO = 1 4 V

–40°C 60 91 60 91 dB(∆VDD/∆VIO) VO = 1.4 V

85°C 60 94 60 94


VO = VDD/2,25°C 105 280 143 300

IDD Supply currentVO VDD/2,VIC = VDD/2, –40°C 158 400 225 450 µANo load 85°C 80 200 103 260





MEDIUM-BIAS MODE


TEST †TLC271M

PARAMETERTEST

CONDITIONSTA† VDD = 5 V VDD = 10 V UNITCONDITIONS A


VIO Input offset voltage

VO = 1.4 V,VIC = 0 V,

25°C 1.1 10 1.1 10 mVVIO Input offset voltage

RS = 50 Ω,RL = 100 kΩ

Full range 12 12


25°C to 125°C 1.7 2.1 µV/°C


,VIC = VDD/2 125°C 1.4 15 1.8 15 nA


,VIC = VDD/2 125°C 9 35 10 35 nA


25°C0to4

–0.3to

4.2

0to9

–0.3to

9.2V


Full range0to

3.5

0to

8.5V

V 100 V25°C 3.2 3.9 8 8.7


–55°C 3 3.9 7.8 8.6 VRL = 100 kΩ

125°C 3 4 7.8 8.6

V 100 V25°C 0 50 0 50


–55°C 0 50 0 50 mVIOL = 0

125°C 0 50 0 50

L i l diff ti l R 10 kΩ25°C 25 170 25 275


RL = 10 kΩSee Note 6

–55°C 15 290 15 420 V/mVvoltage am lification See Note 6

125°C 15 120 15 190

25°C 65 91 65 94


125°C 60 91 60 93

S l lt j ti ti V 5 V t 10 V25°C 70 93 70 93


VDD = 5 V to 10 VVO = 1 4 V

–55°C 60 91 60 91 dB(∆VDD/∆VIO) VO = 1.4 V

125°C 60 94 60 94


VO = VDD/2,25°C 105 280 143 300

IDD Supply currentVO VDD/2,VIC = VDD/2, –55°C 170 440 245 500 µANo load 125°C 70 180 90 240






MEDIUM-BIAS MODE




MIN TYP MAX

25°C 0.43

VI(PP) = 1 V 0°C 0.46


( )70°C 0.36


V/µsSee Figure 98

VI(PP) = 2.5 V 0°C 0.43( )70°C 0.34

Vn Equivalent input noise voltagef = 1 kHz,See Figure 99

RS = 20 Ω, 25°C 32 nV/√Hz

V V C 20 F25°C 55




70°C 50

V 10 V C 20 F25°C 525


CL = 20 pF, 0°C 600 kHzSee Figure 100

70°C 400

V 10 mV f B25°C 40°



70°C 39°




MIN TYP MAX

25°C 0.62

VI(PP) = 1 V 0°C 0.67


( )70°C 0.51


V/µsSee Figure 98

VI(PP) = 5.5 V 0°C 0.61( )70°C 0.46


RS = 20 Ω, 25°C 32 nV/√Hz

V V C 20 F25°C 35




70°C 30

V 10 V C 20 F25°C 635


CL = 20 pF, 0°C 710 kHzSee Figure 100

70°C 510

V 10 mV f B25°C 43°



70°C 42°



MEDIUM-BIAS MODE




MIN TYP MAX

25°C 0.43

VI(PP) = 1 V –40°C 0.51


( )85°C 0.35


V/µsSee Figure 98

VI(PP) = 2.5 V –40°C 0.48( )85°C 0.32


RS = 20 Ω, 25°C 32 nV/√Hz

V V C 20 F25°C 55




85°C 45

V 10 V C 20 F25°C 525


CL = 20 pF, –40°C 770 MHzSee Figure 100

85°C 370

V 10 mV f B25°C 40°



85°C 38°




MIN TYP MAX

25°C 0.62

VI(PP) = 1 V –40°C 0.77


( )85°C 0.47


V/µsSee Figure 98

VI(PP) = 5.5 V –40°C 0.70( )85°C 0.44


RS = 20 Ω, 25°C 32 nV/√Hz

V V 3 C 20 F25°C 35

BOM Maximum output-swing bandwidthVO = VOH,3RL = 100 kΩ



85°C 25

V 10 V C 20 F25°C 635


CL = 20 pF, –40°C 880 kHzSee Figure 100

85°C 480

V 10 mV f B25°C 43°



85°C 41°




MEDIUM-BIAS MODE




25°C 0.43

VI(PP) = 1 V –55°C 0.54


( )125°C 0.29


V/µsSee Figure 98

VI(PP) = 2.5 V –55°C 0.50( )125°C 0.28


RS = 20 Ω, 25°C 32 nV/√Hz

V V C 20 F25°C 55




125°C 40

V 10 V C 20 F25°C 525



125°C 330

V 10 mV f B25°C 40°



125°C 36°




25°C 0.62

VI(PP) = 1 V –55°C 0.81


( )125°C 0.38


V/µsSee Figure 98

VI(PP) = 5.5 V –55°C 0.73( )125°C 0.35


RS = 20 Ω, 25°C 32 nV/√Hz

V V C 20 F25°C 35




125°C 20

V 10 V C 20 F25°C 635



125°C 440

V 10 mV f B25°C 43°



125°C 39°



TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Table of Graphs

FIGURE

VIO Input offset voltage Distribution 34, 35

αVIO Temperature coefficient Distribution 36, 37

vs High-level output current 38, 39VOH High-level output voltage

vs High level out ut currentvs Supply voltage

38, 3940OH g g y g


vs Common-mode input voltage 42, 43

VOL Low level output voltage

vs Common mode in ut voltagevs Differential input voltage

42, 4344VOL Low-level output voltage

gvs Free-air temperature 45vs Low-level output current 46, 47

vs Supply voltage 48AVD Large-signal differential voltage amplification


4849VD g g g

vs Frequency 60, 61

IIB Input bias current vs Free-air temperature 50

IIO Input offset current vs Free-air temperature 50

VI Maximum Input voltage vs Supply voltage 51

IDD Supply currentvs Supply voltage 52

IDD Supply currenty g


SR Slew ratevs Supply voltage 54

SR Slew ratey g


Bias-select current vs Supply voltage 56

VO(PP) Maximum peak-to-peak output voltage vs Frequency 57

B1 Unity gain bandwidthvs Free-air temperature 58

B1 Unity-gain bandwidth vs Supply voltage 59

vs Supply voltage 62φm Phase margin


6263φm g

vs Capacitive load 64

Vn Equivalent input noise voltage vs Frequency 65

Phase shift vs Frequency 60, 61




TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†

Figure 34

–50

Per

cen

tag

e o

f U

nit

s –

%

VIO – Input Offset Voltage – mV5–4 –3 –2 –1 0 1 2 3 4

10

20

30

40

50

60



ÎÎÎÎÎÎÎÎ

VDD = 5 V

ÎÎÎÎÎÎÎÎ

TA = 25°C

ÎÎÎÎN Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


Figure 35

60

50

40

30

20

10

43210–1–2–3–4 5VIO – Input Offset Voltage – mV

Per

cen

tag

e o

f U

nit

s –

%0

–5


ÎÎÎÎÎÎÎÎÎÎÎÎ612 Amplifiers Tested From 6 Wafer LotsÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÎÎÎÎÎÎÎÎ

VDD = 5 VÎÎÎÎÎÎÎÎ

TA = 25°C

ÎÎÎÎN Package

Figure 36


TEMPERATURE COEFFICIENT60

50

40

30

20

10

0– 10 – 8 10


Per

cen

tag

e o

f U

nit

s –

%

– 6 – 4 – 2 0 2 4 6 8


224 Amplifiers Tested From 6 Water LotsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

VDD = 5 VTA = 25°C to 125°CP PackageOutliers:(1) 33.0 µV/°C

Figure 37



20

60

50

40

30

10

0– 10 – 8 – 6 – 4 – 2 0 2 4 6 8 10


Per

cen

tag

e o

f U

nit

s –

%


224 Amplifiers Tested From 6 Water LotsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

VDD = 10 VTA = 25°C to 125°CP PackageOutliers:(1) 34.6 µV/°C





Figure 38

00

VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V


5

– 2 – 4 – 6 – 8

1

2

3

4

TA = 25°CVID = 100 mV

VDD = 5 V

VDD = 4 V

VDD = 3 V



ÁÁÁÁÁÁ

V OH

Figure 39

00


16

– 10 – 20 – 30

2

4

6

8

10

12

14

VDD = 16 V

VDD = 10 V

VID = 100 mVTA = 25°C



– 35– 25– 15– 5

VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁÁÁ

V OH

Figure 40


162 4 6 8 10 12 14

14

12

10

8

6

4

2

16

0

VID = 100 mVRL = 10 kΩTA = 25°C


SUPPLY VOLTAGE

VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁÁÁÁÁÁ

V OH

Figure 41

– 1.7

– 1.8

– 1.9

– 2

– 2.1

– 2.2

– 2.3

1007550200– 25– 50

VDD – 1.6


– 2.4– 75

IOH = –5 mAVID = 100 mA

VDD = 5 V

VDD = 10 V



VO

H –

Hig

h-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁ

V OH






Figure 42

0300

VIC – Common-Mode Input Voltage – V4

700

1 2 3

400

500

600

TA = 25°CIOL = 5 mAVDD = 5 V



650

550

450

350VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁ

VO

L

ÎÎÎÎVID = –1 V


VID = –100 mV

Figure 43

2500

VIC – Common-Mode Input Voltage – V

300

350

400

450

500

2 4 6 8 10

VDD = 10 VIOL= 5 mA

TA = 25°C

VID = –1 V

VID = –2.5 V

VID = –100 mV



VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁÁÁ

VO

L97531

Figure 44

0VID – Differential Input Voltage – V

– 10– 2 – 4 – 6 – 8

800

700

600

500

400

300

200

100

0

VDD = 5 V

VDD = 10 V


DIFFERENTIAL INPUT VOLTAGE

VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁV

OL

– 1 – 3 – 5 – 7 – 9

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IOL = 5 mAVIC = |VID/2|TA = 25°C

Figure 45

– 750


900

– 50 – 25 0 25 50 75 100

100

200

300

400

500

600

700

800VIC = 0.5 VVID = –1 VIOL = 5 mA

VDD = 5 V

VDD = 10 V



VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– m

V

ÁÁÁÁÁÁV

OL





Figure 46


1

80

1 2 3 4 5 6 7

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VID = –1 VVIC = 0.5 VTA = 25°C

VDD = 3 V

VDD = 4 V

VDD = 5 V



VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁÁÁ

VO

L

Figure 47


3

300

5 10 15 20 25

0.5

1

1.5

2

2.5 TA = 25°CVIC = 0.5 VVID = –1 V



VO

L –

Lo

w-L

evel

Ou

tpu

t V

olt

age

– V

ÁÁÁÁ

VO

L

ÎÎÎÎÎÎÎÎ

VDD = 16 V

ÎÎÎÎÎÎÎÎ

VDD = 10 V

Figure 48


500

160

2 4 6 8 10 12 14

50

100

150

200

250

300

350

400

450TA = –55°C

–40°C

0°C

25°C

70°C

85°C


vsSUPPLY VOLTAGE

ÎÎÎÎTA = 125°C


RL = 100 kΩ

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

– V

/mV

Figure 49



450

400

350

300

250

200

150

100

50

1007550250–25–500

125

500

TA – Free-Air Temperature – °C–75


VDD = 5 V


VDD = 10 V


RL = 100 kΩ

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

– V

/mV






Figure 50

0.1125

10000

45 65 85 105

1

10

100

1000

25


INPUT BIAS CURRENT AND INPUT OFFSETCURRENT


11595755535


VDD = 10 VVIC = 5 VSee Note A

ÎÎIIB

ÎÎÎÎÎÎ

IIO

IIB a

nd

IIO

– In

pu

t B

ias

and

IBII I

OIn

pu

t O

ffse

t C

urr

ents

– p

A

NOTE A: The typical values of input bias current and input offsetcurrent below 5 pA were determined mathematically.

Figure 51

MAXIMUM INPUT VOLTAGEvs

SUPPLY VOLTAGE

0


16

160

2 4 6 8 10 12 14

2

4

6

8

10

12

14ÎÎÎÎTA = 25°C

VI –

Max

imu

m In

pu

t V

olt

age

– V

VI

Figure 52

IDD

– S

up

ply

Cu

rren

t –

mA


VO = VDD/2No Load TA = –55°C

0°C

25°C

70°C

125°C

0

400

160

2 4 6 8 10 12 14

50

100

150

200

250

300

350

–40°C

SUPPLY CURRENTvs

SUPPLY VOLTAGE

ÁÁÁÁÁÁ

I DD

Figure 53

–75TA – Free-Air Temperature – °C

250

1250

–50 –25 0 25 50 75 100

25

50

75

100

125

150

175

200

225

SUPPLY CURRENTvs


IDD

– S

up

ply

Cu

rren

t –

mA

ÁÁÁÁ

I DD

ÁÁÁÁÁÁÁÁÁÁ

No LoadVO = VDD/2


VDD = 10 V

ÎÎÎÎÎÎÎÎ

VDD = 5 V





Figure 54

0

SR

– S

lew

Rat

e –

V/


0.9

160.3

2 4 6 8 10 12 14

0.4

0.5

0.6

0.7

0.8

SLEW RATEvs

SUPPLY VOLTAGE

sµ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CL = 20 pFRL = 100 kΩVI(PP) = 1 VAV = 1

See Figure 99TA = 25°C

Figure 55

–75TA – Free-Air Temperature – °C

0.9

1250.2

–50 –25 0 25 50 75 100

0.3

0.4

0.5

0.6

0.7

0.8

SLEW RATEvs



RL = 10 kΩAV = 1

See Figure 99CL = 20 pF

SR

– S

lew

Rat

e –

V/

sµ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VI(PP) = 5.5 VVDD = 10 V

ÁÁÁÁÁÁÁÁÁÁÎÎÎÎÎÎÎÎÎÎÎÎ

VDD = 10 VVI(PP) = 1 V

ÁÁÁÁÁÁÁÁÁÁÎÎÎÎÎVDD = 5 V

VI(PP) = 2.5 V

ÁÁÁÁÁÁÁÁÎÎÎÎÎ

VI(PP) = 1 VVDD = 5 V

Figure 56

0

Bia

s-S

elec

t C

urr

ent

– n

A


–300

160

2 4 6 8 10 12 14

–30

–60

–90

–120

–150

–180

–210

–240

–270

BIAS-SELECT CURRENTvs

SUPPLY VOLTAGE

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VI(SEL) = 1/2 VDD

TA = 25°C

Figure 57

1f – Frequency – kHz

10

10000

1

2

3

4

5

6

7

8

9

10 100

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

ÁÁÁÁÁÁÁÁ

RL = 100 kΩSee Figure 99

ÎÎÎÎÎÎÎÎ

VDD = 10 V

ÎÎÎÎÎÎÎÎ

VDD = 5 V


TA = –55°CTA = 25°CTA = 125°C

– M

axim

um

Pea

k-to

-Pea

k O

utp

ut

Vo

ltag

e –

VV O

(PP

)






Figure 58

800

700

600

500

400

1007550250–25–50300

125

900


B1

– U

nit

y-G

ain

Ban

dw

idth

– M

Hz

–75



ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

See Figure 101CL = 20 pFVI = 10 mVVDD = 5 V

B1

Figure 59



SUPPLY VOLTAGE

750

700

650

600

550

500

450

1412108642400

16

800


VI = 10 mVCL = 20 pFTA = 25°CSee Figure 101

B1

– U

nit

y-G

ain

Ban

dw

idth

– M

Hz

B1

Phase Shift

Ph

ase

Sh

ift

180°

0°

30°

60°

90°

120°

150°

106

105

104

103

102

101

1

100 K101 k100100.1


1


vsFREQUENCY


VDD = 5 VRL = 100 kΩTA = 25°C

107

ÎÎÎÎÎÎ

AVD

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

Figure 60





1f – Frequency – Hz

1 M0.1

10 100 1 k 10 k 100 k

1

101

102

103

104

105

106

150°

120°

90°

60°

30°

0°

180°

Ph

ase

Sh

ift

ÎÎÎÎAVD

Phase Shift


vsFREQUENCY

107 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

TA = 25°CRL = 100 kΩÎÎÎÎÎVDD = 10 V

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

Figure 61

Figure 62

038°

m –

Ph

ase

Mar

gin


50°

2 4 6 8 10 12 14

40°

42°

44°

46°

48°See Figure 100TA = 25°CCL = 20 pFVI = 10 mV

PHASE MARGINvs

SUPPLY VOLTAGE

ÁÁÁÁÁÁ

mφ

Figure 63

–7535°


45°

–50 –25 0 25 50 75 100

37°

39°

41°

43°

VDD = 5 VVI = 10 mVCL = 20 pFSee Figure 100

PHASE MARGINvs


m –

Ph

ase

Mar

gin

ÁÁÁÁÁÁ

mφ






Figure 64

028°

CL – Capacitive Load – pF100

44°

20 40 60 80

30°

32°

34°

36°

38°

40°

42°VDD = 5 VVI = 10 mVTA = 25°CSee Figure 100

PHASE MARGINvs

CAPACITIVE LOAD

m –

Ph

ase

Mar

gin

ÁÁÁÁ

mφ

Figure 65

10

Vn

– E

qu

ival

ent

Inp

ut

No

ise

Vo

ltag

e –

nV

/Hz

f – Frequency – Hz1000

300

50

100

150

200

250

10 100

See Figure 99TA = 25°CRS = 20 ΩVDD = 5 V

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

Vn

ÁÁÁÁÁÁÁÁÁn

V/

Hz




LOW-BIAS MODE


TEST †TLC271C, TLC271AC, TLC271BC

PARAMETERTEST



TLC271C25°C 1.1 10 1.1 10

TLC271C



VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AC IC

,RS = 50 Ω,R 1 MΩ


TLC271BCRI = 1 MΩ 25°C 0.24 2 0.26 2


αVIOAverage temperature coefficient ofinput offset voltage

25°C to 70°C 1.1 1 µV/°C


,VIC = VDD/2 70°C 7 300 8 300

pA


,VIC = VDD/2 70°C 40 600 50 600

pA


25°C–0.2

to4

–0.3to

4.2

–0.2to9

–0.3to

9.2V


Full range–0.2

to3.5

–0.2to

8.5V

V 100 V25°C 3.2 4.1 8 8.9

VOH High-level output voltageVID = 100 mV,RL= 1 MΩ

0°C 3 4.1 7.8 8.9 VRL= 1 MΩ

70°C 3 4.2 7.8 8.9

V 100 V25°C 0 50 0 50


0°C 0 50 0 50 mVIOL = 0

70°C 0 50 0 50

L i l diff ti l R 1 MΩ25°C 50 520 50 870


RL= 1 MΩ,See Note 6

0°C 50 700 50 1030 V/mVvoltage am lification See Note 6

70°C 50 380 50 660

25°C 65 94 65 97


70°C 60 95 60 97

S l lt j ti ti V 5 V t 10 V25°C 70 97 70 97


VDD = 5 V to 10 VVO = 1 4 V

0°C 60 97 60 97 dB(∆VDD/∆VIO) VO = 1.4 V

70°C 60 98 60 98

II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 95 nA

VO = VDD/2,25°C 10 17 14 23


0°C 12 21 18 33 µANo load 70°C 8 14 11 20






LOW-BIAS MODE



PARAMETERTEST



TLC271I25°C 1.1 10 1.1 10

TLC271I




,RS = 50 Ω,R 1 MΩ

Fu

lincmos programmable low-power operational ......title lincmos programmable low-power operational...

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