lithography ii - bilkent universityaykutlu/msn551/litho2.pdf · msn551 introduction to micro and...
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MSN551Introduction to Micro and Nano Fabrication
LITHOGRAPHY II
E-Beam, Focused Ion Beam and Soft Lithography
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Why need electron beam lithography?
● Smaller features are required– By electronics industry:
● Smaller transistors, higher device density● Novel quantum devices: Single electron transistors etc.
– By photonics industry● Integrated optics● Photonic crystals
– Sensors● Sometimes small becomes very advantegous
E-Beam can achieve 10 nm resolution
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Other methods to generate nm scale structures?
● Optical lithography:– Deep UV and X-Rays may be useful– We still need a MASK
● Nanoimprinting– Still need initial master (mask) that has to be
produced by ion or e-beam lithography● AFM based methods
– Tooo slow...
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E-Beam Lithography● Can be performed in a regular electron
microscope● Dedicated e-beam writers still have a lot in
common with the electron microscope.
Let's remember the electron microscope operational principles
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Some other issues● Raith 150
– Schottky thermal-field emission filament, resolution: 2 nm @ 20 kV
– Acceleration voltage: 200 V – 30 kV– Beam current: 4 pA – 350 pA– Working distance: 2 – 12 mm– Writefield: 1 µm – 1 mm– 16 bits / 10 MHz pattern generator– Samples: 1 mm – 6”– Interferometer stage, 2 nm positioning accuracy– Overlay and stitching accuracy: better than 20nm– High degree of automation for automatic pattern
placement and long exposures
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Electron Beam Resists● PMMA● ZEP● HSQ● SU8● ............
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PMMA modification
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HSQ● Negative resist● The highest resolution ebeam resist available?● very low line edge roughness (LER)● Good etch mask for dry-etching
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Bilayers for lift-off
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Proximity effects● Primary electrons (direct from the beam) can
expose● Secondary electrons (scattered from inside the
sample) can also expose
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Proximity effects
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Proximity Effects: Point Spread Function
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Proximity Effects: Point Spread Function
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Proximity Effects: Point Spread Function
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Proximity Effects
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Correction
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Development
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Stiching● E-beam column and pattern generator
electronics can write a finite field size (maximum about a mm)
● Mechanical Stage is used for writing multiple fields.
● Blind mechanical alignment is prone to errors
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Proper alignment of fields and structures is important
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Proper alignment of fields and structures is important
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Focused Ion Beam lithography● Can be used with or without a resist● Lower resolution than best possible with EBL
– Ion source has larger diameter than a field emitter because it is a thermal process
● Ion beam damage to the underlying material● Redeposition ● Arbitrary 3D structures can be fabricated.
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Ion beam milling schematic
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Ion Beam Distributions● Focus dependent
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Direct 3D fabrication
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Etching and Deposition
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Focused Ion beam effects the surface in a variety of ways
● Swelling (Amorphization)● Milling● Deposition● Ion implantation● Backscattering
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Swelling
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Implantation
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Redeposition● Sputtered ions may strike to the sidewalls and
build up there
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Scanning strategies: Single vs Multiple
● Multiple scans may help get what you need
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Scanning strategies: Even direction affects the result
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Scanning Probe Lithography● Using an AFM or STM tip to write features on
the surface● First room temperature single electron transistor
was fabricated by this method.● Much cheaper than an electron beam or ion
beam system– Good for prototyping
● Harder to master
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Ways to pattern● Atomic force microscope and Scanning
tunneling microscope– Oxidation– Material deposition– Monolayer modifications– Thermal processes– Electrochemical processes
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Tip induced oxidation● Electric field helps thin metal film or silicon
surface to oxidize
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Can modify self-assembled monolayers
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Dip-pen Lithography● Can deposit organic layers or even DNA
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Direct metal deposition● Local ark on the nanoscale deposits metal