magnetics design considerations for wireless or ......magnetics design considerations for wireless...
TRANSCRIPT
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Magnetics Design Considerations
for Wireless or Contactless Power
Transfer for EV Charging and Data
Center Servers Directly from MV DC
Grid
Presented by:
Subhashish Bhattacharya
Mar. 13, 2020
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► Outline
Introduction
Motivation and Challenges
Magnetics Design
Converter Topology Selection
Converter Design
Simulation and Experimental Results
Conclusions
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► Introduction
Fast growing in size of data centers and cloud computing
Conventional system of power distribution is at 240V, and involves
multiple PDUs
System inefficient and inconvenient due to bulky distribution cables
PDU: power distribution unit
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► Motivation and challenges
Improving system performance by supplying medium voltage (MV) directly to data-
center racks
Physical galvanic isolation barrier between MV distribution and low voltage application
side
Distribution all the way to point-of-use
Elimination of transformer
Explore the feasibility of wide-band-gap devices
Challenge: Medium voltage at the Rack,
Possible solution: Contactless/ Wireless Power transfer
Metric State of the Art Proposed
Application Voltage Multiple conversion stages to 240V Single conversion to 1kV
Overall Data Center Efficiency 81% to 91% 95%
Safety PPE required PPE not required
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► System Description
SiC wireless power supply for data center server racks
1kV input
20kW output power
48V output voltage
Contactless Power Transfer
Server Power Concept
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► Contactless Power Transfer
Planner transformer based WPT
converter
Split transformer based WPT
converterGap
HV
Primary
Winding
LV Secondary Winding
Leakage FluxLeakage Flux
Mutual FluxHV Insulation
Barrier
Secondary
Core
Primary
Core
Primary
Coil
Secondar
y CoilSecondary
Insulation
Primary
Insulation
Core
Gap
Winding
Gap
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• Secondary current ~460A RMS
• Secondary winding – Copper foil
• Primary current ~ 40A RMS
• Primary winding – Litz Wire
Simplified Diagram of the Plug
Transformer
Low Voltage High voltage
Open PlugClosed Plug
► Contactless Power Transfer Plug
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Comsol FEA verification of magnetic fields of
Quindent design from parametric search, front 1/4 is
cut away to view internals; magnetizing flux (left),
leakage flux (right)
Quindent HPMFT, mid-section profile (left) and 3D
(right) Gray = cores, Red = primary, Green =
secondary
► FEA Validation
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Calculated effective AC winding resistances due
to skin effect at 50kHz.
Secondary Winding Performance Analysis
Simulated current distribution in solid
conductor secondary
• Winding resistance reduces with thickness
• Resistance reduction limited by skin effect
• Aluminum has 20.5% larger skin depth than
Copper
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► Major Constrains to Select Power Converter Topology:
1. High degree of step-down voltage (1.2kV to 48V: 25 times)--if converter topology handles
this partly, then transformer design would be simpler, and probably more efficient
2. Controllability in a wide load variation (20%-100% load)
3. Maintaining required efficiency, where the load variation is very wide
4. Maintaining soft-switching even in wide load variation to meet the efficiency and power
density requirements
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► Possible Converter Topologies
1. Resonant converters
2. Non-resonant converters
3. Two stage power conversion-[can have higher control flexibility, but
meeting required efficiency may be a challenge]
4. Modular parallel converters, or input-series-output-parallel structure-
[efficient solution, but may hit the volume constrain]
Sub-category for the first two categories would be
1. With passive rectification
2. active rectification (dual active bridge/converter)
Topology Selection Criteria
a) Least device count,
b) Stepping-down voltage level
c) Controllability in wide load variation,
d) Soft-switching in wide load variation
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► Inverter Topologies
Vin
S1
S2
HF power inverter
Vac+
Vac-
Vin
S1
S2
HF power inverter
(symmetrical)
Vac+
Vac-
Vin1
Vin2
Only two devices
Voltage gain 0.5 at maximum duty cycle
Output voltage is pulsed dc—requires series
capacitor at output
Difficult to maintain soft-switching at lower
load
Only variable frequency control possible
Only two devices
Voltage gain 0.5 at maximum duty cycle
Output voltage-ac
Suitable both for resonant and non-
resonant converters
Both variable duty cycle, and variable
frequency control possible
Require additional dc-link caps
Difficult to maintain soft-switching at lower
load
(Asymmetrical)
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► Inverter Topology - Comparison
Parameters Values for symmetric Half-
bridge
Values for asymmetric
Half-bridge
Input DC
bus current
Average
RMS
Peak
Same
1x
1x
Same
2 times
2 times
Inverter
switch
current
RMS
Peak
Average
Same Same
Tank
capacitor
voltage
RMS 𝑉𝑐𝑎𝑝
𝑉𝑐𝑎𝑝 2 +𝑉𝑖𝑛2
2
Vin
S1
S2
HF power inverter
Vac+
Vac-
Vin
S1
S2
HF power inverter
(symmetrical)
Vac+
Vac-
Vin1
Vin2
(Asymmetrical)
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► Rectifier Topologies
Io
RL
Vo
Co
D1
D2
HF passive rectifier
Vo
Co
FB passive rectifier
Vo
Co
Current doubler
Only two devices
Suitable for low voltage and
high current at output
Poor transformer utilization—only
half of the coper volume is utilized
at the secondary side winding
voltage stress is double compare
with full bridge diodes
Suitable for low voltage
and high current at output
Require extra inductors
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► Selected Topology
Llk1C1
Vinv Lm
S1
S2
HB Power inverter
Split-core
transformer
C2
CrIinv Lk2
S3
S4
S5
S6
V1 V2
I2
Vo
Vin
Ro
Io
Co
Iin
Vin1
Vin2resonant
tank
Fig. 1: Selected series resonant converter topology with a split-core transformer isolation
between medium and low voltage coils
Only 2 switching devices
voltage gain of inverter—0.5
tank capacitors blocks dc current to flow through primary coil
Inverter output is ac—symmetric +ve and –ve voltage waveforms
Extended soft-switching possible with variable frequency control and with lagging power factor at
inverter output
Large amount of reactive power flows from inverter at light load
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► Steady-state operation
S2t
S1
t3 t5t6t2 t7 t9
iS1=iin
S1
iinv
vinv
vS1iS1
t1
S2
0.5vin
0.5vin
t0Cr Llk1
(a)
vin
iin
C1S1
C2
S2
Lm
n 1
vinv
iinv
Cr Llk1
vin
iin
C1S1
C2
S2
Lm
n 1
vinv
iinv
(b)
Cr Llk1
iin
C1S1
C2
S2
Lm
n 1
vinv
iinv
(c)
Cr Llk1
iin
C1S1
C2
S2
Lm
n 1
vinv
iinv
(d)
Fig. 3 Operating waveforms
Fig. 2 Converter equivalent circuit in each switching intervals
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► Voltage and Current Stresses on Devices
𝜔𝑟=1
𝐶𝑟𝐿𝑙𝑘
መ𝐼𝐷1−4 =𝜋
4𝐼𝑜, 𝐼𝐷1−4 =
𝜋
2 2𝐼𝑜.
𝐼𝑆1 , 𝐼𝑆2 = 0.5 𝐼𝑖𝑛𝑣
𝑉𝑠1 , 𝑉𝑠2 = 𝑉𝑖𝑛
𝑉𝐷1 , 𝑉𝐷2 … 𝑉D4 = 𝑉𝑜
Considering the magnetizing inductance is significantly higher than the leakage, the resonance frequency of the tank is derived as
The peak voltage and rms current ratings of inverter devices are given as
The peak and rms current rating of the rectifier diodes are given as
The peak voltage rating of rectifier diodes are
(1)
(2)
(3)
(4)
(5)
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► Simulation Results:
Simulation platform: PSIM 11
Table 1: Simulation parameters
Parameters Values
Input and output voltage 1000V/48V
Power output 20kW
Air gap (FR4) 0.5 mm
Insulation breakdown strength 10 kV
Turns ratio (actual turns) 10.5:1 (21/2)
Switching frequency 31.5 kHz
Magnetizing Inductance w.r.t. primary 300 µH
Primary leakage 26 µH
Secondary leakage 0.5 µH
ZVS of both the inverter devices
Inverter output and rectifier input voltages and
currents at 20kW, 1000V/48V, 31.5kHz
Iinv *10 Vinv
Lagging PF
250
500
750
-750
-500
-250
25
50
75
-75
-50
-25
I2 V2*10
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► Initial Comparison with Non-resonant Converter ~3kW
90
91
92
93
94
95
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500 1000 1500 2000 2500 3000
VG1
VDS1
Vinv
I1
[500v/div]
[400v/div]
[10A/div]
VG2
VDS2
V2
I2
[500v/div]
[40v/div]
[100A/div]
ZVS
turn-on
ZVS
turn-on
Resonant
Non-
Resonant
Power vs. Efficiency
Non-resonant converter
efficiency slightly lower at
lower loads
It reduces sharply at
higher load due reactive
power loss in leakage
VG1
VDS1
Vinv
I1
[500v/div]
[400v/div]
[5A/div]
ZVS
turn-on
ZVS
turn-on
VG2
VDS2
V2
I2
[500v/div]
[40v/div]
[100A/div]
Resonant system @ 3kW power, 1000V/48V
Non-resonant system @ 2.5kW power, 1000V/48V
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20
20kW TransformerFilter capacitors
(Two in parallel)
To
Load
Resonant Tank Capacitor
InverterGate driver
Major components
Inverter: 1.7kV, 72A SiC Cree,
C2M0045170D
Half-bridge cap: 750V DC, 20uF
Cornell Dubilier UNL7W20K-F
Tank cap: 500V AC, 0.1uF×10
Cornell Dubilier 338-3169-ND
Controller: DSP Texas
Instruments TMS320F28335
Rectifier: 80V, 500A, GeneSiC
MBR50080CT
Rectifier Cap: 400VDC,
380uF×2 Kemet 399-5957-ND
Rectifier
Secondary
Core
Primary
Core
Primary
Coil
Secondar
y CoilSecondary
Insulation
Primary
Insulation
Core
Gap
Winding
Gap
Primary winding Primary assembly
20kW Experimental Set-up
Inverter
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Experimental Results
Vinv
Iinv
At 20kW, 48V output and 1000V input At 15kW, 48V output and 1000V input
ZVS turn-on—100% and 75% of rated load (control with frequency modulation technique)
Single stage power conversion for high voltage ratio
S2 gate
S1 gate
S2 gate
S1 gate
V2
V1
V2
V1
Vinv
Iinv
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Experimental Results
At 10kW, 48V output and 1000V input At 4kW, 48V output and 1000V input
ZVS turn-on—50% and 20% of rated load (control with frequency modulation technique)
Single stage power conversion for high voltage ratio
S2 gate
S1 gate
V2
V1
Vinv
Iinv
S2 gate
S1 gate
V2
V1
Vinv
Iinv
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Loss distribution @ 20kW
Rectifier Transformer Inverter Cap. ESR
Loss distribution @20kW
Rectifier Transformer Inverter Cap. ESR
► Efficiency
Experimental result with diode: GeneSiC
MBR50080CT200V - 80V, 500A, 880mV@ 250AEstimated result with two parallel Infineon
IPT007N06N — 60V, 371A, 0.75mΩ
90
92
94
96
98
2500 6500 10500 14500 18500
Eff
icie
ncy [
%]
Output Power [W]
efficiency w/o synchronous rectification
92
94
96
98
2000 4500 7000 9500 12000 14500 17000 19500
efficiency with synchronous rectification
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Plug disconnection ‘video’:
► Arc-flash Test at Rated Voltage and Light Load
Ch1 = Inverter output
Ch2 = Output Voltage
Ch3 = Primary Current
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► Conclusions
Proposed an efficient method of distributing power to data center racks
SiC based inverter enables single stage power conversion from MV to LV
Safety issues are addressed using contactless power transfer technology
Converter selection, analysis and converter design is reported
Operating inverter output at lagging power-factor, soft switching (ZVS) is achievable for
all the inverter devices
Experimental results obtained from the scaled down prototype verifies the
performances
Possibility of a highly compact converter design using SiC inverter and GaN rectifier
and operating at high frequency (few hundred kHz, Power < 5kW)
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