magnetron sputtering equipment simulation
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1Copyright 2002-2015 PEGASUS Software Inc., All rights reserved.
Plasma Enhanced materials processing and
rarefied GAS dynamics Unified Simulation tools
PEGASUS
2Copyright 2002-2015 PEGASUS Software Inc., All rights reserved.
Magnetron sputtering equipment
plasma simulation
Modules : MSSM PIC-MCCM
3Copyright 2002-2015 PEGASUS Software Inc., All rights reserved.
N
S
N
S
N
S
N
S
ターゲット
基板
Coaxial cylinder type
substrate
Target
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N
S
S
SN
N
ターゲット
Planar type
Target
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UBM (UnBalanced Magnetron) type
基板
磁石
substrate
Magnet
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Magnetron sputtering equipments
Simulation of sputtered particles
Modules : MSSM PIC-MCCM SPUTSM DSMCM
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Block diagram for simulation of sputtered particles
PIC-MCCMNe, Ni, Φ, Es, Ve,
Vi
MSSM
Magnetic flux density
DSMCMNn,TnPn,Vn
Data base(B H Characteristic )
SPUTSMSASAMAL Data base
Collision cross section
Incident ions to target・ Particle flux・ Energy・ Angle
Sputtered particles・ Sputtering flux・ Sputtering angle・ Sputtering energy
Adsorbed flux to sub.
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Simulation of Cu sputtered particles
in Ar plasma
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2D円柱座標系でモデル化
substrate
targetmagne
t Modeling of 2-D
axial symmetry
substrate
targetCylin
dric
al a
xis
Computational model
York
50mm
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Step1. Magneto-static simulation by MSSM
Line of magnetic force
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Step2. Plasma simulation by PIC-MCCM
Ar+density [/m3] Electric potential [V]
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Sputtering flux [/m2/s]( Erosion profile )
Step3. Sputtering simulation by SPUTSM
Sputtering angular dist. ofsputtered particles
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Step4. Simulation sputtered particle by DSMCM
Density dist. ofSputtered Cu atoms[/m3]
Cu adsorbed flux [/m2/s]
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Simulation of Si sputtered particles
in Ar/O2 plasma
Facing target magnetron sputtering equip.
15Copyright 2002-2015 PEGASUS Software Inc., All rights reserved.
N
N
S
S-400 V
Ar,O2:
0.25 Pa
Remanence : 1 [T]
10080
200
Substrate
Substrate
Computational model
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Step1. Magneto-static simulation by MSSM
Magnetic flux densityLine of magnetic force
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Step2. Plasma simulation by PIC-MCCM
Electrondensity [/m3]
Ar+
density [/m3] O2+
density [/m3]
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O-
density [/m3]Electric
potential [V]Electron
Temp. [eV]
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Si sputtering flux [/m2/s]
Step3. Sputtering simulation by SPUTSM
Ar+ ion flux [/m2/s] O2+ ion flux
[/m2/s]
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Step4. Simulation sputtered particle by DSMCM
Density dist. ofSputtered Si atoms
[/m3]
Temp. dist. ofSputtered Si atoms
[eV]