may 2010 doc.: ieee 802.11-10/0497r0 60-ghz rf system ... › 802.11 › dcn › 10 ›...

May 2010

Tian-Wei Huang, National Taiwan University

doc.: IEEE 802.11-10/0497r0

Submission

60-GHz RF System Performance Optimization

Date: 2010-05-17

Authors:Name Affiliations Address Phone email

Tian-Wei Huang National Taiwan University

No. 1, Sec. 4, Roosevelt Road, Taipei, 10617 Taiwan(R.O.C.)

+886-2-33665084 [email protected]

Liang-Hung Lu National Taiwan University



Huei Wang National Taiwan University



Ruey-Beei Wu National Taiwan University



Juinn-Horng Deng Yuan Ze University

135 Yuan-Tung Road, Chung-Li, 32003, Taiwan(R.O.C.)

+886-3-463-8800 [email protected]

James Wang MediaTek No.1, Dusing Rd. 1, Hsinchu Science Park, Hsin-Chu, Taiwan 30078, R.O.C.


Vish Ponnampalam Media Tek No.1, Dusing Rd. 1, Hsinchu Science Park, Hsin-Chu, Taiwan 30078, R.O.C.


Alvin Hsu Media Tek No.1, Dusing Rd. 1, Hsinchu Science Park, Hsin-Chu, Taiwan 30078, R.O.C.


May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Abstract

• This presentation proposes two techniques to minimize the impact of RF impairments on the performance of 60-GHz multi-gigabit system.

• An example of 60-GHz 65-nm CMOS power amplifier pre-distortion linearizer is proposed for the optimization of multi-gigabit RF system linearity.

• A 60-GHz sub-harmonic local oscillator topology is also proposed for the 65-nm CMOS phase noise optimization.

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Outline

• Introduction• 65-nm CMOS PA linearity optimization• 65-nm CMOS phase noise optimization• Conclusions• References

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Introduction

SwitchBPF

BasebandReceiver

LNA

PA

LocalOscillator

LPF

LPFBaseband

Transmitter

BasebandRF SiP

Antenna57-66 GHz

Rx

Tx

RF

RF SoC

LOLO/2LO/4

Linearizer

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Modified Rapp PA Modeling [1]

• Input signal x(t) to an amplifier produces output signal y(t):

[ ] [ ]

[ ]PM)-(AM distortion phase theis ))((

AM)-(AM distortion (gain) amplitude theis )(where

))(()(2cos)())(2cos()()(

tAtAG

tAttftAGy(t)ttftAtx

c

c

Ψ

Ψ++=+=

θπθπ

level saturation theis factor smoothness theis

signalgain small theis where

1

)(21

2

sat

ss

sat

Asg

AgA

AgAG

⎟⎟

⎠

⎞

⎜⎜

⎝

⎛⎟⎟⎠

⎞⎜⎜⎝

⎛+

=

⎟⎟⎠

⎞⎜⎜⎝

⎛⎟⎟⎠

⎞⎜⎜⎝

⎛+

=Ψ2

1

1

)(q

q

A

AA

β

α

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

65nm CMOS Standard PA [1]

AM-AM parametersg = 4.65Asat = 0.58s = 0.81

AM-PM parametersa = 2560b = 0.114q1 = 2.4q2 = 2.3

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

65nm CMOS NTU PA AM-AMVDD 1V

g=8.5, s=1.2 ,Asat=1.7

OP1dB = 10.8 dBm

Psat = 14.3 dBm

g is the small signal gain

s is the smoothness factor

Asat is the saturation level

12 2

( )

1s s

sat

AG A g

gAA

=⎛ ⎞⎛ ⎞⎜ ⎟+ ⎜ ⎟⎜ ⎟⎝ ⎠⎝ ⎠

-30 -25 -20 -15 -10 -5 0 5 10-10

-5

0

5

10

15

20

Out

put P

ower

(dB

m)

Input Power(dBm)

Pout_Rapp Model Pout_Simulation Power Gain

PA simulation is using ADS and CMOS foundry model

Gai

n (d

B)

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

q1=4.4 ,

q2=3.0 ,

a=8000 ,

B=0.125

65nm CMOS NTU PA AM-PMVDD 1V

1

2( )

1

q

q

AAA

α

β

Ψ =⎛ ⎞⎛ ⎞+⎜ ⎟⎜ ⎟⎜ ⎟⎝ ⎠⎝ ⎠

-30 -25 -20 -15 -10 -5 0 5 10-2

-1

0

1

2

3

4

5

6

7

8

9

10

Norm

alize

d P

hase D

isto

rtio

n in D

egre

e

Input Power (dBm)

Phase Distortion in Degree_Modified Rapp Model Phase Distortion in Degree_Simulation


May 2010


doc.: IEEE 802.11-10/0497r0

Submission

65nm CMOS NTU PA with Linearizer AM-AMVDD 1V

g=5.8, s=1.35 ,Asat=1.75

OP1dB = 12.5 dBm

Psat = 14.3 dBmg is the small signal gain

s is the smoothness factor

Asat is the saturation level

12 2

( )

1s s

sat

AG A g

gAA

=⎛ ⎞⎛ ⎞⎜ ⎟+ ⎜ ⎟⎜ ⎟⎝ ⎠⎝ ⎠

-30 -25 -20 -15 -10 -5 0 5 10-10

-5

0

5

10

15

20

Out

put P

ower

(dB

m)

Input Power(dBm)

Pout Rapp Pout Simulation Power Gain


Gai

n (d

B)

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

q1=4.5 ,

q2=3.2 ,

a=5000 ,

B=0.125

65nm CMOS NTU PA With Linearizer AM-PMVDD 1V

1

2( )

1

q

q

AAA

α

β

Ψ =⎛ ⎞⎛ ⎞+⎜ ⎟⎜ ⎟⎜ ⎟⎝ ⎠⎝ ⎠

-30 -25 -20 -15 -10 -5 0 5 10-2

-1

0

1

2

3

4

5

6

7

8

9

10

Norm

alize

d P

hase D

isto

r

Input Power (dBm)

tion in D

egre

e Phase Distortion in Degree_Modified Rapp Model Phase Distortion in Degree_Simulation


May 2010


doc.: IEEE 802.11-10/0497r0

Submission

BER Peformance

SC 16-QAM, 3Gbps

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

EVM Performance

SC 16-QAM, 3Gbps

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

65nm CMOS NTU PA IMD3

-30 -25 -20 -15 -10 -5 0 5 10-40-35-30-25-20-15-10-505

101520

Gai

n (d

B) &

IMD

3 (d

Bc)

Input Power(dBm)

Simulated IMD3 With Linearizer Simulated IMD3 W/O Linearizer Simulated Power Gain

Two tone frequency : 60GHz , 60.5GHzPA simulation is using ADS and CMOS foundry model

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Comparison of IMD3 for 65nm CMOS NTU PAWithout Linearizer

-30 -25 -20 -15 -10 -5 0 5 10-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

IMD

3 (d

Bc)

Input Power(dBm)

Rapp model IMD3 W/0 Linearizer Simulated IMD3 W/O Linearizer


May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Comparison of IMD3 for 65nm CMOS NTU PAWith Linearizer

-30 -25 -20 -15 -10 -5 0 5 10-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

IMD

3 (d

Bc)

Input Power(dBm)

Simulated IMD3 With Linearizer Rapp model IMD3 With Linearizer


[3]

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

VCO Performances for LO (1/2)VCO Performances for LO (1/2)Circuit Schematic & Design Parameters

Based-on tuning requirement (6~8-GHz @60 GHz)

Design without band-switching for comparison

Td: CPW with shielded ground

Device Design Value

M1, M21 × 8 μm / 0.06

μm

Ibias 7.5 mA

width 4 μm

length 220μm

spacing 10 μmTd

Z0 57.7 Ω

Cvar 21 ~ 46 fF

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

10.0k 100.k 1.00M 10.0M1.00k 100.M

-120

-100

-80

-60

-40

-20

-140

0

Offset Freq. (Hz)

PN

(dB

c/H

z)

Vctrl = 0 VVctrl = 0.6 V

Vctrl = 1.2 V

0.2 0.4 0.6 0.8 1.00.0 1.2

-90

-85

-80

-95

-75

Vctrl (V)

PN @

1-M

Hz

offs

et (d

B/H

z)

0.2 0.4 0.6 0.8 1.00.0 1.2

4

6

8

2

10

-8

-6

-4

-10

-2

Vctrl (V)

Cor

e P

ower

(dB

m)

Buffered P

ower (dB

m)

0.2 0.4 0.6 0.8 1.00.0 1.2

60

62

64

66

58

68

Vctrl (V)

Freq

uenc

y (G

Hz)

17

VCO Performances for LO (2/2)VCO Performances for LO (2/2)

May 2010


doc.: IEEE 802.11-10/0497r0

Submission18

VCO Performances for LO/2 (1/2)VCO Performances for LO/2 (1/2)Circuit Schematic & Design Parameters

Based-on tuning requirement (3~4-GHz @30 GHz)


Device Design Value

M1, M21 × 12 μm / 0.06

μmIbias 5.4 mA

L 0.21 nHLd Q 32

Cvar 62 ~ 100 fF

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

0.2 0.4 0.6 0.8 1.00.0 1.2

4

6

8

2

10

-8

-6

-4

-10

-2

Vctrl (V)

Cor

e P

ower

(dB

m)

Buffered P

ower (dB

m)

10.0k 100.k 1.00M 10.0M1.00k 100.M

-140-120-100

-80-60-40-20

-160

0

Offset Freq. (Hz)

PN

(dB

c/H

z)

Vctrl = 0 V

Vctrl = 0.6 V

Vctrl = 1.2 V

0.2 0.4 0.6 0.8 1.00.0 1.2

-115

-110

-105

-100

-95

-90

-120

-85

Vctrl (V)

PN

@1-

MH

z of

fset

(dB

/Hz)

0.2 0.4 0.6 0.8 1.00.0 1.2

29

30

31

32

33

28

34

Vctrl (V)

Freq

uenc

y (G

Hz)

19

VCO Performances for LO/2 (2/2)VCO Performances for LO/2 (2/2)

May 2010


doc.: IEEE 802.11-10/0497r0

Submission20

VCO Performances for LO/4 (1/2)VCO Performances for LO/4 (1/2)Circuit Schematic & Design Parameters

Based-on tuning requirement (1.5~2-GHz @15 GHz)


Device Design Value

M1, M21 × 9 μm / 0.06

μmIbias 2.9 mA

L 0.88 nHLd Q 17.5

Cvar 60 ~ 100 fF

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

10.0k 100.k 1.00M 10.0M1.00k 100.M

-140-120-100

-80-60-40-20

-160

0

Offset Freq. (Hz)

PN

(dB

c/H

z)Vctrl = 0 V

Vctrl = 0.6 V

Vctrl = 1.2 V

0.2 0.4 0.6 0.8 1.00.0 1.2

-110

-105

-100

-115

-95

Vctrl (V)

PN

@1-

MH

z O

ffset

(dB

c/H

z)

0.2 0.4 0.6 0.8 1.00.0 1.2

5

6

7

8

9

4

10

-7

-6

-5

-4

-3

-8

-2

Vctrl (V)

Cor

e Po

wer

(dBm

)

Buffered Power (dBm

)

0.2 0.4 0.6 0.8 1.00.0 1.2

14.5

15.0

15.5

16.0

16.5

14.0

17.0

Vctrl (V)

Freq

uenc

y (G

Hz)

21

VCO Performances for LO/4 (2/2)VCO Performances for LO/4 (2/2)

May 2010


doc.: IEEE 802.11-10/0497r0

Submission22

ComparisonComparisonPerformance Comparison among LO, LO/2, LO/4

Phase-noise degradation: 6-dB/octave

Phase-noise performances can be further improved via band-

switching design to cover the wide tuning range

Mode LO LO/2 LO/4

Technology 65-nm 1P6M CMOS

Frequency 60 GHz 30 GHz 15 GHz

Tuning Range 9 GHz 5 GHz 2 GHz

FTR 15 % 20 % 13.3 %

PN @1 MHz -79 ~ -91 dBc/Hz -88 ~ -109 dBc/Hz-97 ~ -108

dBc/Hz

PN degradation 0 dB 6 dB 12 dB

Core Power 4.5 ~ 8.5 dBm 5.8 ~ 7.6 dBm 7.8 ~ 9.2 dBm

DC Power 9 mW 6.48 mW 3.48 mW

May 2010


doc.: IEEE 802.11-10/0497r0

Submission23

FOM CalculationsFOM CalculationsFOM Comparison among LO, LO/2, LO/4 (VCO only)

FOM = PN–20log(fo/Δf)-20log(FTR/10)+10log(PDC/1mW)-1.5log2(fo/LO)

PN degradations are included.

1.5 dB conversion loss is assumed for each multiplication by 2.

Based on simple LC-tank VCO, the one with LO/2 case yields the

highest FOM.

The LO case with wide tuning ranges PN degradations

Low inductor Q for LO/4 case Colpitts structure or other available

high-Q inductors

Mode LO LO/2 LO/4

FOM -174.56 dBc/Hz -184.42 dBc/Hz -180.59 dBc/Hz

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Recent Published VCO Phase Noise

SiGe

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Phase Noise Model [1] • Phase noise may be reasonably modeled by a two

pole – one zero model

• Case 1:– PSD(0) = -92 dBc/Hz– Pole frequency fp = 1 MHz– Zero frequency fz = 100 MHz– PSD(infinity) = -130 dBc/Hz

⎥⎥⎦

⎤

⎢⎢⎣

⎡

++

=))/(1

)/(1)0()( 22

p

z

ffffPSDfPSD

• Case 2:– PSD(0) = -85 dBc/Hz– Pole frequency fp = 1 MHz– Zero frequency fz = 100 MHz– PSD(infinity) = -130 dBc/Hz

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

BER Peformance

SC 16-QAM, 3Gbps

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

EVM Performance

SC 16-QAM, 3Gbps

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

Conclusions

• 65nm CMOS PA linearizer can boost 60-GHz linear power 2-3dB under the same linearity requirement and DC power consumption.

• The modified Rapp PA model has a difficulty to model the corresponding IM3 plot with 3:1 asymptotic behavior.

• The divided-by-2 local oscillator frequency in 65nm CMOS 60-GHz RF system has better phase noise performance than the fundamental local oscillator frequency.

May 2010


doc.: IEEE 802.11-10/0497r0

Submission

References

• [1] 11-09-1213-01-00ad-60ghz-impairments-modeling.ppt • [2] Jeng-Han Tsai, Hong-Yeh Chang, Pei-Si Wu, Yi-Lin Lee, Tian-

Wei Huang, and Huei Wang, " Design and Analysis of a 44-GHz MMIC Low-loss Built-in Linearizer for High-Linearity Medium Power Amplifiers," IEEE Trans. Microwave Theory Tech. Vol. 54, No. 6, pp. 2478-2496, June 2006

• [3] S. Cripps, “The Intercept Point Deception,” IEEE Microwave Magazine, pp. 44-50, Feb. 2007

AbstractOutlineModified Rapp PA Modeling [1]65nm CMOS Standard PA [1]65nm CMOS NTU PA AM-AM�VDD 1V65nm CMOS NTU PA AM-PM�VDD 1V65nm CMOS NTU PA with Linearizer AM-AM�VDD 1V65nm CMOS NTU PA With Linearizer AM-PM�VDD 1VBER PeformanceEVM Performance65nm CMOS NTU PA IMD3Comparison of IMD3 for 65nm CMOS NTU PA�Without LinearizerComparison of IMD3 for 65nm CMOS NTU PA�With LinearizerVCO Performances for LO (1/2)VCO Performances for LO (2/2)VCO Performances for LO/2 (1/2)VCO Performances for LO/2 (2/2)VCO Performances for LO/4 (1/2)VCO Performances for LO/4 (2/2)ComparisonFOM CalculationsRecent Published VCO Phase NoisePhase Noise Model [1] BER Peformance EVM PerformanceConclusionsReferences

may 2010 doc.: ieee 802.11-10/0497r0 60-ghz rf system ... › 802.11 › dcn › 10 ›...

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