mena2000 phonons: lectures 5-6 (week 10)...this law of dulong and petit (1819) is approximately...
TRANSCRIPT
MENA2000 Phonons: Lectures 5-6 (week 10)
Recap of last week lectures
Born – von Karman boundary conditions;
Phonon density of states (DOS) in 1-D;
Calculation of the lattice heat capacity
Dulong-Petit theory for heat capacity;
Einstien model
Debye model
Comparison of different models
Thermal conductivity and thermal expansion
Temperature dependence of the thermal conductivity
Thermal expamsion
Summary: phonons in a nut-shell
MENA2000 Phonons: Lectures 5-6 (week 10)
Recap of last week lectures
Born – von Karman boundary conditions;
Phonon density of states (DOS) in 1-D;
Calculation of the lattice heat capacity
Dulong-Petit theory for heat capacity;
Einstien model
Debye model
Comparison of different models
Thermal conductivity and thermal expansion
Temperature dependence of the thermal conductivity
Thermal expamsion
Summary: phonons in a nut-shell
Calculating phonon density of states – DOS – in 1-D
This sets a condition on allowed k
values: ...,3,2,12
2 nNa
nknkNa
So the separation between allowed
solutions (k values) is:
independent of k, so the
density of modes in k-space is
uniform
Since atoms s and s+N have the same displacement, we can write:
Nss uu ))(()( taNskitksai ueue ikNae1
Nan
Nak
22
Thus, in 1-D: 22
1 LNa
kspacekofinterval
modesof#
Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
Energy level diagram for
one harmonic oscillator
MENA2000 Phonons: Lectures 5-6 (week 10)
Recap of last week lectures
Born – von Karman boundary conditions;
Phonon density of states (DOS) in 1-D;
Calculation of the lattice heat capacity
Dulong-Petit theory for heat capacity;
Einstien model
Debye model
Comparison of different models
Thermal conductivity and thermal expansion
Temperature dependence of the thermal conductivity
Thermal expamsion
Summary: phonons in a nut-shell
Temperature dependence of experimentally measured heat capacity
Classical (Dulong-Petit) theory for heat capacity
For a solid composed of N such atomic oscillators:
Giving a total energy per mole of sample:
TNkENE B31
RTTkNn
TNk
n
EBA
B 333
So the heat capacity at constant volume
per mole is: KmolJ
V
V Rn
E
dT
dC 253
This law of Dulong and Petit (1819) is approximately obeyed by most solids at high T ( > 300 K).
Einstein model for heat capacity accounting for quantum properties of oscillators
constituting a solid
Planck (1900): vibrating oscillators (atoms) in a solid have quantized energies
...,2,1,0 nnEn
[later showed is actually correct] 21 nEn
...,2,1,0 nnEn
Einstein (1907): model a solid as a collection of 3N independent 1-D oscillators, all with constant , and
use Planck’s equation for energy levels
occupation of energy level n:
(probability of oscillator being in level
n)
0
/
/
)(
n
kTE
kTE
n
n
n
e
eEf classical physics (Boltzmann
factor)
Average total energy
of solid:
0
/
0
/
0
3)(3
n
kTE
n
kTE
n
n
nn
n
n
e
eE
NEEfNUE
Boltzmann factor is a weighting factor that determines the relative probability of a state i
in a multi-state system in thermodynamic equilibrium at tempetarure T.
Where kB is Boltzmann’s constant and Ei is the energy of state i. The ratio of the
probabilities of two states is given by the ratio of their Boltzmann factors.
kTEie/
Boltzmann factor determines Planck distribution
Einstein model for heat capacity accounting for quantum properties of oscillators
constituting a solid
0
/
0
/
3
n
kTn
n
kTn
e
en
NU
Using Planck’s equation: Now let
kTx
0
03
n
nx
n
nx
e
en
NU
0
0
0
0 33
n
nx
n
nx
n
nx
n
nx
e
edx
d
N
e
edx
d
NU Which can be
rewritten:
Now we can use the
infinite sum: 1
1
1
0
xforx
xn
n
1
3
1
3
1
13
/
kTx
x
x
x
x
e
N
e
N
e
e
e
e
dx
d
NU
To give: 11
1
0
x
x
xn
nx
e
e
ee
So we obtain:
Einstein model for heat capacity accounting for quantum properties of oscillators
constituting solids
Differentiating:
Now it is traditional to define an
“Einstein temperature”:
Using our previous definition:
So we obtain the prediction:
1
3/ kT
A
V
Ve
N
dT
d
n
U
dT
dC
2/
/2
2/
/
1
3
1
3 2
kT
kT
kT
kT
kT
kT
A
V
e
eR
e
eNC
kE
2/
/2
1
3)(
T
T
TV
E
EE
e
eRTC
Einstein model for heat capacity accounting for quantum properties of oscillators
constituting solids
Low T limit:
These predictions are qualitatively correct: CV
3R for large T and CV 0 as T 0:
High T limit: 1T
E
RR
TC
T
TTV
E
EE
311
13)(
2
2
1T
E
T
TT
T
TV
EE
E
EE
eRe
eRTC
/2
2/
/2
33
)(
3R
CV
T/E
Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
Energy level diagram for
one harmonic oscillator
High T limit: 1T
E
Low T limit: 1T
E
Correlation with energy level diagram for a harmonic oscillator
Problem of Einstein model to reproduce the rate of heat capacity decrease at low
temperatures High T behavior:
Reasonable agreement with
experiment
Low T behavior: CV 0
too quickly as T 0 !
More careful consideration of phonon occupancy modes as a way to improve
the agreement with experiment
Debye’s model of a solid:
• 3N normal modes (patterns) of oscillations
• Spectrum of frequencies from = 0 to max
• Treat solid as continuous elastic medium (ignore details of atomic structure)
This changes the expression for CV because each
mode of oscillation contributes a frequency-
dependent heat capacity and we now have to
integrate over all :
dTCDTC EV ),()()(max
0
# of oscillators per unit
, i.e. DOS
Distribution function
Debye model
3
3
3
4
2k
LNk
3
126
V
N
k
v
k
B
BD
Density of states of acoustic phonos for 1 polarization
Debye temperature θ
32
3
6 v
VN D
N: number of unit cell
Nk: Allowed number of k points in a
sphere with a radius k
/vk
32
3
3
33
63
4
2)(
v
V
v
LN
32
2
2
)()(
v
V
d
dND
Thermal energy U and lattice heat capacity CV : Debye model
D
D
D
x
x
x
BV
B
B
BV
V
B
e
exdx
TNkC
Tk
Tkd
Tkv
V
T
UC
Tkv
VdnDdU
0
2
43
0
2
4
232
2
0
32
2
)1(9
]1)/[exp(
)/exp(
2
3
1)/exp(23)()(3
3 polarizations for acoustic modes
Debye model
Universal behavior for all
solids!
Debye temperature is
related to “stiffness” of
solid, as expected
Better agreement than
Einstein model at low T
Debye model
Quite impressive
agreement with predicted
CV T3 dependence for
Ar! (noble gas solid)
Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
More careful consideration of phonon occupancy modes
as a way to improve the agreement with experiment
Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
More careful consideration of phonon occupancy modes
as a way to improve the agreement with experiment
Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
Ensemble of 3N independent harmonic oscillators modeling vibrations in a solid
Quantum
oscillators
Classical
oscillators En
erg
y
TNkENE B31
Any energy state is accessible for any oscillator in
form of kBT, i.e. no distribution function is applied
and the total energy is
Any energy state is accessible for any
oscillator in form of kBT, i.e. no distribution
function is necessary, so that Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
Ensemble of 3N independent harmonic oscillators modeling vibrations in a solid
Quantum
oscillators
Classical
oscillators En
erg
y
TNkENE B31
Any energy state is accessible for any oscillator in
form of kBT, i.e. no distribution function is applied
and the total energy is
Not all energies are accessible, but only those in quants of ħωn,
and Planck distribution is employed to calculate the occupancy
at temperature T, so that
nNE 3
1
133)(3
/
0
/
0
/
0Tk
n
TkE
n
TkE
n
n
nnB
Bn
Bn
eN
e
eE
NEEfNE
Ensemble of 3N independent harmonic oscillators modeling vibrations in a solid
Dulong-Petit model is valid only at high
temperatures
Einstein model is in a good agreement with the
experiment, except for that at low temperatures
Energy level diagram for a chain of atoms with one
atom per unit cell and a lengt of N unit cells
Energy level diagram for
one harmonic oscillator
nNE 3
max
min
)(3 nDdE
MENA2000 Phonons: Lectures 5-6 (week 10)
Recap of last week lectures
Born – von Karman boundary conditions;
Phonon density of states (DOS) in 1-D;
Calculation of the lattice heat capacity
Dulong-Petit theory for heat capacity;
Einstien model
Debye model
Comparison of different models
Thermal conductivity and thermal expansion
Temperature dependence of the thermal conductivity
Thermal expamsion
Summary: phonons in a nut-shell
When thermal energy propagates through a solid, it is carried by lattice waves or phonons. If the atomic
potential energy function is harmonic, lattice waves obey the superposition principle; that is, they can pass
through each other without affecting each other. In such a case, propagating lattice waves would never
decay, and thermal energy would be carried with no resistance (infinite conductivity!). So…thermal
resistance has its origins in an anharmonic terms of the lattice energy.
Classical definition of thermal
conductivity vCV
3
1
VC
wave velocity
heat capacity per unit volume
mean free path of scattering (would be if
no anharmonicity)
v
high T low T
dx
dTJ
Thermal energy
flux (J/m2s)
Phenomenological description of thermal conductivity
Temperature dependence of thermal conductivity in terms of phonon prperties
Mechanisms to affect the mean free pass (Λ) of phonons in periodic crystals:
2. Collision with sample boundaries (surfaces)
3. Collision with other phonons deviation from harmonic
behavior
1. Interaction with impurities, defects, and/or isotopes
VC 11 / kT
ph
en
ThighR
TlowT
3
3
ThighkT
Tlow
To understand the experimental dependence , consider limiting values of and (since
does not vary much with T). VC v)(T
deviation from
translation symmetry
1) Please note, that the temperature dependence of T-1 for Λ at the high temperature limit results from considering nph , which is the
total phonon occupancy, from 0 to ωD. However, already intuitively, we may anticipate that low energy phonons, i.e. those with low k-
numbers in the vicinity of the center of the 1st BZ may have quite different appearence conparing with those having bigger k-numbers
close to the edges of the 1st BZ.
1)
Temperature dependence of thermal conductivity in terms of phonon prperties
Mechanisms to affect the mean free pass (Λ) of phonons in periodic crystals:
2. Collision with sample boundaries (surfaces)
3. Collision with other phonons deviation from harmonic
behavior
1. Interaction with impurities, defects, and/or isotopes
VC 11 / kT
ph
en
ThighR
TlowT
3
3
ThighkT
Tlow
To understand the experimental dependence , consider limiting values of and (since
does not vary much with T). VC v)(T
deviation from
translation symmetry
1) Please note, that the temperature dependence of T-1 for Λ at the high temperature limit results from considering nph , which is the
total phonon occupancy, from 0 to ωD. However, already intuitively, we may anticipate that low energy phonons, i.e. those with low k-
numbers in the vicinity of the center of the 1st BZ may have quite different appearence conparing with those having bigger k-numbers
close to the edges of the 1st BZ.
1)
Thus, considering defect free, isotopically clean sample having limited size D
CV
low T
T3
nph 0, so
, but then
D (size)
T3
high T
3R
1/T
1/T
How well does this match experimental results?
Temperature dependence of thermal conductivity in terms of phonon properties
T3
However, T-1 estimation for κ in the high
temperature limit has a problem. Indeed, κ
drops much faster – see the data – and the
origin of this disagreement is because – when
estimating Λ – we accounted for all excited
phonons, while a more correct
approximation would be to consider “high”
energetic phonons only. But what is “high” in
this context?
T-1 ?
T3 estimation for κ
the low
temperature limit
is fine!
Temperature dependence of thermal conductivity in terms of phonon prperties
Experimental (T)
NaNak
2121
aNa
NkN
22
NaNak
4222
𝑬𝟐 𝑬𝑫 𝑬𝟏
«significant» modes «insignificant» modes
The fact that «low energetic phonons» having k-values << 𝝅/𝒂 do not participate in the energy transfer, can
be understood by considering so called N- and U-phonon collisions readily visualized in the reciprocal
space. Anyhow, we account for modes having energy E1/2 = (1/2)ħωD or higher. Using the definition of θD =
ħωD/kB, E1/2 can be rewritten as kBθD/2. Ignoring more complex statistics, but using Boltzman factor only,
the propability of E1/2 would of the order of exp(- kB θD/2 kB T) or exp(-θD/2T), resulting in Λ exp(θD/2T).
𝝎𝟐 𝝎𝑫 𝝎𝟏 1/2
Explanation for κ exp(θD/2T) at high temperature limit
CV
low T
T3
nph 0, so
, but then
D (size)
T3
high T
3R
exp(θD/2T)
exp(θD/2T)
Temperature dependence of thermal conductivity in terms of phonon prperties
Thus, considering defect free, isotopically clean sample having limited size D
Lecture 9: Thermal conductivity and thermal expansion
•We understood phonon DOS and occupancy as a function of temperature, but what about transport properties?
• Thermal expansion
• Phenomenological description of thermal conductivity
• Temperature dependence of thermal conductivity in terms of phonon properties
• Phonon collisions: N and U processes
• Comparison of temperature dependence of κ in crystalline and amorphous solids
Phonon collisions: N and U processes
How exactly do phonon collisions limit the flow of heat?
2-D lattice 1st BZ in k-space:
1q
2q
3q
a2
a2
321 qqq
No resistance to heat flow
(N process; phonon momentum conserved)
Predominates at low T << D since and q will be
small
What if the phonon wavevectors are a bit larger?
2-D lattice 1st BZ in k-space:
1q
2qa
2
a2
Gqqq
321
Two phonons combine to give a net phonon with an
opposite momentum! This causes resistance to heat flow.
(U process; phonon momentum “lost” in units of ħG.)
More likely at high T >> D since and q will be larger
21 qq
G
3q
Umklapp = “flipping over” of wavevector!
Phonon collisions: N and U processes
Explanation for κ exp(θD/2T) at high temperature limit
11 / kT
ph
en
ThighT
Tlow
1
The temperature dependence of T-1 for Λ results
from considering the total phonon occupancy, from
0 to ωD. However, interactions of low energy
phonons, i.e. those with low k-numbers in the
vicinity of the center the 1st BZ, are not changing
energy. These are so called N-processes having little
impact on Λ.
vCV3
1
1q
2q
3q
a2
a2
1q
2qa
2
a2
21 qq
G
3q
U-process , i.e. to turn over the wavevector by G,
from a German word umklappen.
A more correct approximation for Λ (in high temperature limit) would be to consider “high” energetic phonons
only, i.e those participating in U- processes.
Explanation for κ exp(θD/2T) at high temperature limit
NaNak
2121
aNa
NkN
22
NaNak
4222
𝑬𝟐 𝑬𝑫 𝑬𝟏
«significant» modes «insignificant» modes
The fact that «low energetic phonons» having k-values << 𝝅/𝒂 do not participate in the energy transfer, can
be understood by considering so called N- and U-phonon collisions readily visualized in the reciprocal
space. Anyhow, we account for modes having energy E1/2 = (1/2)ħωD or higher. Using the definition of θD =
ħωD/kB, E1/2 can be rewritten as kBθD/2. Ignoring more complex statistics, but using Boltzman factor only,
the propability of E1/2 would of the order of exp(- kB θD/2 kB T) or exp(-θD/2T), resulting in Λ exp(θD/2T).
𝝎𝟐 𝝎𝑫 𝝎𝟏 1/2
Explanation for κ exp(θD/2T) at high temperature limit
Temperature dependence of thermal conductivity in terms of phonon prperties
CV
low T
T3
nph 0, so
, but then
D (size)
T3
high T
3R
exp(θD/2T)
exp(θD/2T)
Thus, considering defect free, isotopically clean sample having limited size D
dxe
dxxe
xkTxU
kTxU
/)(
/)(
In a 1-D lattice where each atom experiences the same potential energy function U(x), we can calculate the
average displacement of an atom from its equilibrium position:
Thermal expansion
I
Thermal Expansion in 1-D
Evaluating this for the harmonic potential energy function U(x) = cx2 gives:
dxe
dxxe
xkTcx
kTcx
/
/
2
2
Thus any nonzero <x> must come from terms in U(x) that go beyond x2. For HW you will evaluate the
approximate value of <x> for the model function
The numerator is zero!
!0x independent of T !
),0,,(...)( 43432 kTfxgxandfgcfxgxcxxU
Why this form? On the next slide you can see that this function is a reasonable model for the kind of U(r)
we have discussed for molecules and solids.
Lattice Constant of Ar Crystal vs. Temperature
Above about 40 K, we see: TxaTa )0()(
Usually we write: 00 1 TTLL = thermal expansion coefficient
MENA2000 Phonons: Lectures 5-6 (week 10)
Recap of last week lectures
Born – von Karman boundary conditions;
Phonon density of states (DOS) in 1-D;
Calculation of the lattice heat capacity
Dulong-Petit theory for heat capacity;
Einstien model
Debye model
Comparison of different models
Thermal conductivity and thermal expansion
Temperature dependence of the thermal conductivity
Thermal expamsion
Summary: phonons in a nut-shell
MENA2000
Faste materialers fundamentale oppbygning
https://www.uio.no/studier/emner/matnat/fys/MENA2000/
krystallers atomære oppbygging, hvordan krystaller klassifiseres, symmetri kjemiske bindinger og molekylorbitalteoriteori, og hvordan en periodisk struktur gir opphav til fenomener som gittervibrasjoner og elektroniske båndstrukturer.
Module I – Crystallography and crystal structures
Module II – Phonons
Module III – Molecular orbital therory
Module IV – Electrons
MENA2000 : Fundamental structure of solid materials - Lecture Plan
calender week
Må 14/1 10-12 no lecture 3
Ti 15/1 14-16 Introduction to the course
Module I – Crystallography and crystal structures (H, Fjellvåg, föreläsningskompendium)
Må 21/1 10-12 Basis and unit cells, Bravais lattices (2D and 3D), density, etc 4
Ti 22/1 14-16 Point symmetry; stereographical projections; crystal planes and directions
Må 28/1 10-12 Symmetry of molecules; introduction to groups; Crystal structures; concepts, digital tools 5
Ti 29/1 14-16 continued
Må 04/2 10-12 Translation symmetry, space groups, international tables for crystallography 6
Ti 05/2 14-16 continued
Må 11/2 10-12 Crystal structures of functional materials II; defects, solid solutions 7
Ti 12/2 14-16 Reciprocal lattice; Diffraction, XRD fingerprint analysis
Module II – Phonons C.Kittel’s Introduction to Solid State Physics; chapters 3 (pp73-85) 4, 5, and 18 (pp.557-561)
Må 18/2 10-12 Crystals as diffraction grids; Laue condition; Bragg plains and Brillouin zones; 8
Ti 19/2 14-16 Vibrations in monoatomic and diatomic chains of atoms; examples of dispersion relations in 3D
Må 25/2 10-12 Periodic boundary conditions (Born – von Karman); phonons and its density of states (DOS) 9
Ti 26/2 14-16 Effect of temperature - Planck distribution; lattice heat capacity: Dulong-Petit, Einstein, and Debye models
Må 04/3 10-12 Comparison of different lattice heat capacity models 10
Ti 05/3 14-16 Thermal conductivity and thermal expansion
Module III – Molecular orbital therory (H.Sønsteby, Molecular Symmetry in Solid-State Chemistry, föreläsningskompendium)
Må 11/3 10-12 Introduction to symmetry and molecular symmetry 11
Ti 12/3 14-16 Group theory for material scientists
Må 18/3 10-12 Character tables 12
Ti 19/3 14-16 Bonding from a symmetry perspective
lecture-free week 13
Må 01/4 10-12 The role of symmetry in vibrational spectroscopy 14
Ti 02/4 14-16 Crystal field theory and ligand field theory
Må 08/4 10-12 Interplay between MO-theory and band structure in 1D 15
Ti 09/4 14-16 Band structure and density of states (DOS) in 3D from MO-theory
Easter 16
Module IV – Electrons C.Kittel’s Introduction to Solid State Physics; chapters 6, 7, 11 (pp 315-317) 18 (pp. 528-530) , and Appendix D
Ti 23/4 14-16 Free electron gas (FEG) versus free electron Fermi gas (FEFG) 17
Må 29/4 10-12 DOS of FEFG in 1D and 3D at ground state (T=0) 18
Ti 30/4 14-16 Effect of temperature – Fermi-Dirac distribution; Fermi energy and Fermi level; heat capacity of FEFG
Må 06/5 10-12 Transport properties of electrons – examples for thermal, electric and magnetic fields 19
Ti 07/5 14-16 DOS of FEFG in 2D - quantum wells, DOS in 1D – quantum wires, and in 0D – quantum dots
Må 13/5 10-12 Origin of the band gap; Bloch theorem; Nearly free electron model 20
Ti 14/5 14-16 Kronig-Penney model; Empty lattice approximation; number of orbitals in a band
Må 20/5 10-12 Effective mass method; electrons and holes; 21
Ti 21/5 14-16 Effective mass method for calculating localized energy levels for defects in crystals
Summary and repetition
To 23/5 14-16 Repetition - course in a nutshell
The "physics" part of MENA2000 in terms of Modules II And IV
Waves in Periodic Lattices
Electron waves in lattices
Free electrons
Electron DOS
Fermi-Dirac distribution
Elastic waves in lattices
Vibrations
Phonon DOS
Planck distribution
Elecronic properties: Electron concentration and transport,
contribution to the heat capacity
Thermal properties: heat capacity and conductance,
thermal expansion
Strating point for advanced material science courses
Module IV Module II
SiC ZnO
ITO Si
Cu2O
• Solar cells
• Detectors
• IC’s
• Power electronics
• High temperature sensors • LED’s
• Transparent electronics
• Displays
• Electronic ink
• Optical cavities
• Multi-junction solar cells
• Thermoelectric generators
• Thermoelectric cooling
Thermo-
electric
materials
Semiconductor physics at UiO
Semiconductor physics at UiO
NEC ion implantor
HRXRD
SIMS
ZnO MOCVD
UiO clean room area
Labs
temperature/time
resolved PL
DLTS
6 Professors
4 Adm/technical staff
~ 10 Post docs
~ 15 PhD students and ~ 10 Msc students
Micro- and Nanotechnology Laboratory (MiNaLab)
Halvlederfysikk ved UiO / MiNa-Lab