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MeRAMMagnetoelectric Random Access Memory

BY

Alaknanda Agarwal

1311001Under the guidance of

Ms. Kiran Dange

22 September, 2015

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Classication of Memories

Figure: Classication of memories.

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Internal Structure of ROM

Figure: Internal Structure of ROM - an example.

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MRAM (Magneto-electric Random Access Memory)

1. Shortcomings of previous memories eliminated.2. Uses electron spin to store information (Spintronics)3. Works on principle of Magnetoresistance.4. Structure

Magnetic Tunnel Junctions(MTJ)

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MTJ - Magnetic Tunnel Junctions

1. Composed of twoferromagnetic layers, xedand free, separated by anultrathin layer of dielectricinsulator.

2. Exhibits two resistances.

Figure: Magnetic Junction Tunnel.

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Internal structure of MRAM

Figure: Internal structure of MRAM.7/ 15

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Working of MRAM

1. Video2. Read operation3. Write operation

Figure: Write operation in MRAM.

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STT MRAM

1. Spin Transfer Torque MRAM2. Read operation3. Write operation

Disadvantages of MRAM1. Power Efficiency2. Size

3. Manufacturing4. Cost

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MeRAM

1. Disadvantages of STT MRAM2. Possible to create logic that is its own form of memory. Allow

us to build chips that can very quickly shut off parts that

arent being used.3. MeRAM boasts a thicker insulating layer than MRAM, does

not permit current to ow as readily.4. MeRAM uses voltage instead of current to switch

magnetization.

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Comparision of MRAM with previous memories

Figure: Comparision of MRAM with previous memories.. 12/ 15

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MRAM vs. MeRAM

1. Generates much less heat2. Energy efficient

3. Less dense4. Low cost per bit5. No new facilities required to manufacture MeRAM than

MRAM.

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References

1. http://spectrum.ieee.org/semiconductors/memory/spin-memory-shows-its-might

2. http://www.cs.utah.edu/thememoryforum/jin.pdf

3. http://physics.usask.ca/ chang/homepage/Spintronics/Spintronics.h4. Spintronics based Computing by Springer edited by Weisheng

Zhao, Guillaume Prenat5. http://newsroom.ucla.edu/releases/ucla-engineers-have-

developed-241538

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THANK YOU !

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