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Millimeter-Wave and Terahertz Antennas: from PCB to Silicon
Sanming Hu, Hongfu Meng, Wenbin Dou
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China
17th Oct., APCAP2017, Xi’an, China
毫米波国家重点实验室State Key Lab. of Millimeter Waves
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Copyright
©The use of this work is restricted solely for academicpurposes. The author of this work owns the copyright and noreproduction in any form is permitted without writtenpermission by the author.
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Abstract
Millimeter-wave (mmWave) and terahertz (THz) technologies enable a largenumber of exciting applications, such as space exploration, high-speedcommunication, self-driving, non-ionizing imaging. In these and other mmWaveand THz systems, antennas play key roles since they significantly affect and evendirectly determine the system performance and cost.
This talk presents five different antennas from PCB to Silicon, i.e., (1) 94GHzreflectarray in printed circuit board (PCB), (2) 135GHz silicon antenna fabricated byin-house BCB-Silicon process for mmWave 3DIC, (3) a horn antenna compatiblewith through-silicon via process for our proposed mmWave 3D SiP, (4) a substrate-integrated waveguide antenna in commercial SiGe BiCMOS process, it achieve fullintegration and frequency reconfigurablity from 397 to 428GHz, and (5) a 315GHzantenna to be inherently integrated with graphene detector in the same high-resistivity silicon substrate.
The above research partially reviews our effort in mmWave and THz antennas, andprovides a reference for mmWave/THz antennas and systems.
Keywords: Silicon antennas, PCB antenna, on-chip antennas, through-silicon via
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Sanming Hu received his Ph.D. degree in 2009 from SoutheastUniversity (SEU), Nanjing, China, where he is a Professor.
From 2006 to 2009, he visited Nanyang TechnologicalUniversity, Singapore, for his doctoral research. From 2009 to2015, he was a Senior Research Engineer, a Scientist I, and aScientist II at the Institute of Microelectronics, A*STAR,Singapore, an Alexander von Humboldt Research Fellow atUniversity of Ulm, Germany, and then an Assistant Professor atHeriot-Watt University, Edinburgh, UK.
Dr. Hu is a Senior Member of IEEE and CIE. He served as a GuestEditor of SCI Journals. As the first author, he received the BestPaper Award of the IEEE Transaction on Components,Packaging, and Manufacturing Technology (2012). He was arecipient of the Recruitment Program of Global Experts – YoungProfessionals, China (2015).
Biography of 1st Author
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Outline
Millimeter Waves and Terahertz
mmWave/THz Antennas
① 94GHz Reflectarray Antennas
② 135GHz Antenna for 3D IC
③ 135GHz Horn for 3D SiP
④ 315GHz Dipole for Graphene Detector
⑤ 400GHz SIW Antenna for SoC
Summary
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Millimeter Waves and Terahertz
Millimeter-Wave (mmWave or MMW)A wavelength-based term Wavelength = 1 ~ 10mm Frequency = 30 ~ 300GHz
Terahertz (THz, sub-mmWave, far-infrared) A frequency-based term
What is the Freq. Range of THz?Photonics: 0.1THz (100GHz) – 10THzElectronics: 0.3THz (300GHz) – 3THzCommon: 0.3THz (300GHz) – 10THz
… Supper High Frequency Millimeter-Wave Terahertz (THz) Infrared Visible Light …
Electronics Photonics
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Google’s 60GHz Project Soli
mmWave and THz Applications
5G Communication
Automotive Radar
Space Application
And More……
© P. D. Maagt, etc
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94GHz Reflectarray Antenna
Outer Loop
Inner CircleR0
R1
R2
Ground
ReflectElement
Substrate
Element Sizes: 1.5mm×1.5mm
Phase Shift: -1600~+2000
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94GHz Reflectarray Antenna
Reflect Aperture Sizes: 75mm×75mm
Offset Angle: 26.5°Main Beam Direction: θ0 = 0°
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94GHz Monopulse Reflectarray
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94GHz Monopulse Reflectarray
E-Plane H-Plane
Diffe
rent
ial
Sum
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mmWave 3D Integrated Circuits
Source: S. Hu etc, IEEE Trans. CPMT
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135GHz Antenna for 3D IC
SourceS. Hu etc, IEEE Trans. CPMT (Best Paper Award))
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S Parameters and Gain
10-dB RL bandwidth: 116 - 141 GHz (sim.); ~110 – 147 GHz (meas.) Wide impedance bandwidth is achieved using two resonances BCB filling significantly benefit the silicon process, reduce the
cavitity size by 76.8%, and remain the antenna gain
120 125 130 135 140 1450
1
2
3
4
5
6
7
8
Gain
(dBi
)
Frequency (GHz)
BCB (tanδ =0) + polymer (tanδ =0) + PEC BCB (tanδ =0) + polymer (tanδ =0) + Cu BCB (tanδ =0.01) + polymer (tanδ =0) + Cu BCB (tanδ =0.01) + polymer (tanδ =0.01) + Cu
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Measurement
120 125 130 135 140 1450
1
2
3
4
5
6
7
8
Effic
ienc
y (%
)
Gai
n (d
Bi)
Frequency (GHz)
Measured Gain Simulated Gain
80
85
90
95
100
Simulated Efficiency
Simulated high efficiency around 86% Measured high gain (5.4 dBi @135 GHz)
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Printed Circuit Board
Organic Substrate
Organic Substrate
PCB
Organic Substrate
Wav
egui
deRa
diat
or
3D Explored View
Front-Side View
Horn antenna formed by normal solder balls
Horizontal radiation to benefit applications such as chip-to-chip communication
Horn antenna fed by a normal solder ball as a current probe
Antenna for mmWave 3D SiP
Source: S. Hu etc, EuCAP
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Radiation Pattern
It works as a typical SIW horn antenna
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Antenna Gain Improvement
Bigger ball, higher gain, available ball/ball height: 0.04~ 0.76 mm Proposed antenna has ~2.1dB higher gain than the best case of a horn filled
by FR4 (tanδ=0.018 at 10 GHz). Proposed antenna has ~14dB higher gain than the best case of a horn filled by
Silicon (ρ=100 Ω∙cm)
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THz Graphene Detector
L. Vicarelli, etc. Nature Materials, Oct. 2012A. Zak, etc. Nano Letters, 5834-5838. 2014
Expected and Reported Antenna for THz Imager
Expected Reported
Impedance(ohms)
Several thousand (to perfectly match GFET. Exact value depends on GFET) 50 or 188
Gain (dBi) Higher is better -10 ~ 0
Bandwidth Narrow (to reduce input noise) Wide
A better antenna will significantly benefit a THz imager
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315GHz Proposed Antenna Structure
Silicon(k=11.9)
Air (k=1) Antenna
Reported antennas mainly use this top-side radiation,
it is very weak due to high k of Silicon
Flip the silicon chip on FR4 PCB, now we can
use the strong radition
Flip the chip
Printed Circuit Board (PCB)
Bended dipole is proposed to get
high impedance & differential feeding
GFET
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Antenna Layout0.6 mm
0.6
mm
S G
D
D
40 mm
PCB_Top PCB_Bottom
Detector Chip
AntennaGraphene
FET
Full MetalD
G S
D
Frequency: 315 GHz Impedance: 5000 ohms
Chip substrate: High-resistivity (10k) silicon Chip size: 600um x 600um x 525um PCB substrate: for supporting & biasing
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3D Radiation Pattern
High-resistivity (10k) Silicon works as a superstrate
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2D Radiation Pattern
High gain (9.47dBi vs -10~0 dBi for reported designs)
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Antenna Input Impedance
High impedance (5k ohms) to match GFET THz detector
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Reflection Coefficient
Narrow bandwidth (3.5 GHz) to reduce input noise
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400GHz Reconfigurable SIW Antenna
TM2
TM1
M5
Close-up of Q1 and Q2 connection3D view of SIW antennaMetal layers
M4
M3
M2M1
V_Q2(M1 layer)
V_Q1(M1
layer)
Vias from TM2 layer
to M1 layer
Sidewall (vias from TM2 layer
to M1 layer)
Sidewall (vias from TM2 layer to M3
layer)
Ground (M1 layer)
TM2 layer
Sidewall (vias from
M3 layer to M1 layer)
Radiation slot (TM2
layer)
Ridge (M3
layer)
Q2
Q1Radiation slot
(TM2 layer) Q1=0.12um x 0.84 umQ2=0.12um x 0.84 um
Two transistors (Q1 and Q2) are employed as switches to control the physical length of the slot and therefore the operation frequency
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Radiation Pattern
Simulated antenna gain: -0.55dBi vs -7dBi (patch, JSSC2010) Close structure: alleviate the undesired surface-wave and
electromagnetic interference to nearby active circuits
030
60
90
120
150180
210
240
270
300
330
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Theta (degree)Ga
in (
dBi
)
126o
XoZ Plane YoZ Plane
- 0.55 dBi
88o
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S Parameters of SIW Antenna
360 370 380 390 400 410 420 430 440-25
-20
-15
-10
-5
0
|S
11| (d
B), G
ain (d
Bi)
Frequency (GHz)
Q1 OFF, Q2 OFF: |S11| Q1 OFF, Q2 OFF: Gain Q1 ON, Q2 OFF: |S11| Q1 ON, Q2 OFF: Gain Q1 OFF, Q2 ON: |S11| Q1 OFF, Q2 ON: Gain
Antenna gain: ~ -0.5dBi Impedance bandwidth:
397-408GHz, 406-418GHz, and 417-428GHz
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THz Silicon Chip with SIW Antenna
400GHz Transmitter & Receiver Chipset
Source: S. Hu etc, IEEE JSSC, pp.2654-2664
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Summary
mmWave/THzAntennas
for 3D IC
for SoCfor 2D
GrapheneDetector
for 3D SiP
Thanks for Your Attention
for System on PCB