* Student paper

Monday, September 25, 2017 Morning session 8:30am – Opening Ceremony 8:45am – Plenary : Quantum optoeletronics in II-VI nanostructures Maxime Richard, Institute NEEL CNRS, Grenoble, France Quantum Structures & Quantum Phenomena 9:30am – A-1 Polariton lasing in ZnO microcavities: Si vs ZnO substrates O. Jamadi,a F. Reveret,a J. Leymarie,a P. Disseix,a F. Medard,a M. Mihailovic,a D. Solnyshkov,a G. Malpuech,a S. Bouchoule,b X. Lafosse,b M. Leroux,c F. Semond,c C. Deparis,c and J. Zuniga-Perez c a Clermont Université/CNRS UMR6602, Institut Pascal, BP 10448, F-63000 Clermont Ferrand, FRANCE b C2N, CNRS/UPSUD, Route de Nozay, 91360 Marcoussis, FRANCE c UCA, CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, FRANCE 9:45am – A-2 Decoherence mechanisms of the bound electron spin immerged in a quantum well G. Garcia,a F. Bernardot,a,b G. Karczewskic, C. Testelina and M. Chamarroa a Sorbonne Universités, UPMC Univ Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris , F-75005, Paris, France b Univ Paris 07, F-75205 Paris Cedex 13, France c Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland 10:00am – A-3* Optical properties of coupled ZnTe optical microcavities M. Ściesiek,a W. Pacuski,a J.-G. Rousset,a M. Parlińska-Wojtan,b A. Golnik,a J. Suffczyńskia a Inst. of Experimental Physics, Faculty of Physics, University of Warsaw, Warsaw, Poland b Inst. of Nuclear Physics, Polish Academy of Sciences, Kraków, Poland 10:15am – A-4 Effect of Rashba Spin-Orbit Coupling on Polaron Properties in CdSe Nanowire under Electric Field A. Vartanian, K. Vardanyana Department of Solid State Physics, Yerevan State University, 1, Al. Manoogian, 0025 Yerevan, Armenia 10:30am – Coffee Break

* Student paper

Devices 1 11:00am – Invited : Optically-pumped semiconductor disk lasers and progress towards ZnCdMgSe vertical gain structures Jennifer Hastie, Institute of Photonics, Strathclyde University, Glasgow, UK 11:30am – B-1 Tuning the Excitonic Emission of Nearly Lattice-Matched Zn1-zCdzSe/Zn1-xCdxSe/ Zn1-yMgySe (z >x) Quantum Wells in the Yellow-Green Range G. Villa-Martínez, F. Sutara, and I. Hernández-Calderón Physics Department, Cinvestav-IPN, Ave. IPN 2508, 07360, Mexico City, Mexico 11:45am – B-2: Recombination enhanced effect in green/yellow luminescence from BeZnCdSe quantum wells grown by molecular beam epitaxy Ryoichi Akimoto Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1 Tsukuba 305-8568 Japan 12:00pm- B-3 Au-ZnO Nanowire Schottky Diode Random Lasers S. Bashar, M. Suja, W. H. Shi, J. C. Yang, and J. L. Liu Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA 12:15pm – B-4* Lasing from a CdSe/(Cd, Mg)Se superlattice embedded in a planar microcavity lattice-matched to ZnTe K. Sawicki, J.-G. Rousset, R. Rudniewski, W. Pacuski, M. Nawrocki and J. Suffczyński Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 St., PL-02-093 Warsaw, Poland 12:30pm – Lunch

* Student paper

Monday, September 25, 2017 Afternoon Session Materials Growth and Characterization 2:15pm – Invited : Studying II-VI compound semiconductors with heterovalent interfaces David Smith, Arizona State University, Phoenix, AZ, USA 2:45pm – C-1 Development of Scalable Si-based Composite Substrates for Various Optoelectronic Materials at 6.1 Å and 6.4 Å Y. Chen US Army Research Laboratory 2800 Powder Mill Road Adelphi, MD 20783 3:00pm – C-2 Design, Growth and Characterization of Type I Quantum Wells Based on ZnCdSe/ZnTe Type II Heterostructures Confined within ZnSe Barriers J.C. Banthí,a F. Sutara,b I. Hernández-Calderóna,b a DNyN Program, Cinvestav, Ave. IPN 2508, 07360 Mexico City, Mexico b Physics Department, Cinvestav, Ave. IPN 2508, 07360 Mexico City, Mexico 3:15pm – C-3 Analysis of composition profiles and strain across the CdTe/InSb interface Esperanza Luna,a J. Bartolomé,a A. Trampert,a J. Lu,b T. Aoki,c Y.-H. Zhang,d M.R. McCartney,e and D.J. Smithe a Paul-Drude-Institut für Festkörperelektronik, Berlin D-10177, Germany b School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA c LeRoy Eyring Center for Solid State Science, Arizona Sate University, Tempe, AZ 85287, USA d School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA e Department of Physics, Arizona State University, Tempe AZ 85287, USA 3:30pm – Coffee Break 4:00pm – C-4 Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys K. Ichino, K. Sahashi, N. Nanba, T. Nakashima, Y. Tomita, K. Akaiwa, and T. Abe Department of Information and Electronics, Tottori University, 4-101 Koyama-minami, Tottori, 680-8552, Japan 4:15pm – C-5 Structural studies of short period superlattices grown by molecular beam epitaxy M. Stachowicza, S. Magalhãesb, M. Pietrzyka, J. M. Sajkowskia, P. Dluzewskia, A. Kozaneckia, S. E. Alvesb a Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46 PL-02-668 Warsaw, Poland b IPFN, Instituto Superior Técnico, Universidade de Lisboa, EN10, km 139,7, 2695-066 Bobadela, Portugal 4:30pm – C-6 Advances in II-VI Epitaxial lift-off and novel structure fabrication R.T Moug, J. Zhu, N. Mavridi, N.M. Eldose Institute of Photonics and Quantum Sciences, SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom 4:45pm – C-7 Late News 5:30pm – Poster Session 1

* Student paper

Monday, September 25, 2017 5:30pm – 7:00pm – Poster Session 1 P1-1 Аcoustically Sensitive Near-Dislocation Clusters of Point Defects in CdTe:Cl Ya. Olikh a, M. Tymochko a, V. Shenderovsky b a Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauky, Kyiv, 03028 b Institute of Physics, NAS of Ukraine, 46, pr. Nauky, Kyiv, 03028 P1-2* Investigation on Te inclusions and related point defects in THM-growth CdMnTe crystal Yifei Mao, Jijun Zhang, Linjun Wang, Jiahua Min, Xiaoyan Liang, Liwen Lin, Ming Li, Ying Zhang School of Materials Science and Engineering,Shanghai University, Shanghai 200444,China P1-3 Distribution of point defects in CdMnTe crystal grown by Traveling Heater Method Linjun Wang, Jijun Zhang, Jiahua Min, Xiaoyan Liang, Yifei Mao, Liwen Lin, Ming Li, Ying Zhang School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China P1-4 Approach towards high n-type doping of bulk CdTe S. K. Swaina, J. J. McCoya, K. G. Lynna, b a Center for Materials Research, Washington State University, Pullman, WA 99164, USA b Department of Physics and Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164 P1-5* Refinement of MgTe Lattice Parameter and Elastic Constants using High Resolution X-ray Diffraction Measurements S. Rab, Md A. Siddique, M. Edirisooriya, E.G. LeBlanc, T.H. Myers Materials Science, Engineering, & Commercialization Program, Texas State University, 601 University Drive, San Marcos, TX 78666, USA P1-6 Isothermal Close Space Vapor Transport: basic principles and recent applications O. de Melo,a E. Sanchez,a C. de Melo,a V. Torres Costa,b J. C. González,c G. Santanad aPhysics Faculty, University of Havana, 10400 La Habana, Cuba bApplied Physics Department, Faculty of Sciences, Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid cDepartamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970, Brazil dInstituto de Investigación en Materiales, Universidad Nacional Autónoma de México, Cd. Universitaria, A.P. 70-360, Coyoacán 04510, México D. F. P1-7* Adhesion measurements of II-VI materials using epitaxial lift-off N. Mavridi, J. Zhu, N.M. Meldose, C. Halvorson, K.A. Prior, R.T. Moug Institute of Photonics and Quantum Sciences (IPAQS), School of Engineering and Physical Sciences (EPS), Heriot-Watt University, Edinburgh, EH14 4AS, UK P1-8 ZnO/ZnMgO quantum wells in ZnMgO nanocolumns on r-and c-plane Al2O3substrates:growth conditions and optical properties. M.A. Pietrzyk, M. Stachowicz, P. Dluzewski, A. Wierzbicka, A. Kozanecki Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46 PL-02668, Warsaw, Poland

* Student paper

P1-9 Fabrication of Cu2ZnSnSe4 thin films by selenization of metal precursors Y. Kato, S. Tsuji, T. Tanaka, K. Saito, and Q. Guo Department of Electrical and Electronic Engineering, Saga University, 1 Honjyo, Saga 840-8502, JAPAN P1-10* Stacking of ZnSe/ZnCdSe multi quantum wells on GaAs (100) by epitaxial lift-off N. M. Eldose, J. Zhu , N. Mavridi, and R. T. Moug School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom P1-11 Enhanced magnetism due to co-doping donor impurity Al in a magnetic semiconductor (Zn,Cr)Te S. Shimodaira,a T. Nakamuraa, H. Hamadaa, H. Nitanib, S. Kurodaa a Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan b High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan P1-12* Multiple Magnetic Phase Transitions in Zn 1-x Mn x S y O 1-y Z. A. Yunusov,a Sh. U. Yuldashev,a, Y. H. Kwon,b T. W. Kanga a Nano-Information Technology Academy, Dongguk University, Seoul 100-715, Korea b Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea P1-13* Non-radiative recombination channel for excitons in quantum dots containing a few Mn2+ ions K. Oreszczuk, M. Goryca, W. Pacuski, T. Smoleński, M. Nawrocki and P. Kossacki Institute of Experimental Physics, Faculty of Physics, University of Warsaw ul. Pasteura 5, 02-093 Warsaw, Poland P1-14 Enhanced Structural and Luminescent Properties of Carbon-Treated ZnO Nanorod Arrays on (100) Si substrate Im Taek Yoon,a Hak Dong Cho,a Gennady N. Panin,b Dmitry V. Roshchupkin,b a Quantum Functional Semiconductor Research Center, Dongguk University, Seoul, 100-715, Republic of Korea b Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation P1-15 Electron States, Optical Phonons, and Related Electronic Transport Properties in Core-shell Nanowires WenHao Liu, Jing Li, ZhongXian Xue, Yuan Qu School of Physical Science and Technology, Inner Mongolia University Hohhot 010021, P.R. China P1-16 Theory of Mechanoluminescence Produced During Fracture of II-VI Semiconductors Manas Kumar Sahu Dept. of Physics of Sound, Indira Kala Sangit Vishwavidyalaya Khairagarh (C.G.) India P1-17 Substrate type impact on emission y structure of ZnO nanocrystals T. V. Torchynska2, Ch. Ballardo1 and B. EL FILALI1 1UPIITA-Instituto Politécnico Nacional, México D.F.07738, México 2ESFM-Instituto Politécnico Nacional, México D.F.07738, México

* Student paper

P1-18* Studies of Linearly Polarized Photoluminescence from Stacked ZnTe/ZnSe Quantum Dots R. Wu,a, c H. Ji,a, S. Dhomkar,a V. Deligiannakis,b, c M. C. Tamargo,b, c I L. Kuskovskya, c a Department of Physics, Queens College of CUNY, 65-30 Kissena Blvd, Queens, NY 11367 b Department of Chemistry, City College of CUNY, 365 Fifth Avenue, New York, NY 10016 c The Graduate Center of CUNY, 160 Convent Avenue, New York, NY 10031 P1-19* Theoretical Determination of Optimal Material Parameters for ZnCdTe/ZnCdSe Quantum Dot Intermediate Band Solar Cells Cassandra Imperato, Gehan Ranepura, Lev Deych and Igor Kuskovsky Department of Physics, Queens College of CUNY, Flushing New York 11367, USA P1-20 Total Count of Salmonella typhimurium Coupled on Water Soluble CdSe Quantum Dots by Fluorescence Detection R. Feliciano Crespo,a C. Ramirez Duranb and O. Perales Perezc, a Department of Chemistry, University of Puerto Rico, Mayaguez, PR, USA. b Department of Chemical Engineering, University of Puerto Rico, Mayaguez, PR, USA. c Department of Engineering Science & Materials, University of Puerto Rico, Mayaguez, PR, USA. P1-21 Radiative defect transformation at aging of ZnO:Ag Nanocrystals T.V. Torchynskaa, B. El Filali b, E. Velazquez Lozadac and L. Shcherbynad a Instituto Politécnico Nacional, ESFM, U.P.A.L.M. México City, 07738, México b Instituto Politécnico Nacional, UPIITA, Av. IPN, México City, 07738, México c Instituto Politécnico Nacional, ESIME,U.P.A.L.M. México City, 07738, México d V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03028, Ukraine P1-22 Impact of Anionic Ligands on Photophysics of II-VI Nanostructures Svetlana Kilina Chemistry and Biochemistry Department, North Dakota State University, Fargo, ND 58102 P1-23* Temperature Dependence of Absorption and Photoluminescence Properties of Colloidal ZnSe Quantum Dots Y. Lee, T. Taniguchi, H. Kawasaki, T. Watanabe, and D. Kim Department of Applied Physics, Graduate School of Engineering, Osaka City University 3-3-138, Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan P1-24 An Analysis of Point Defects Induced by In, Al, Ni and Sn Dopants in Bridgman-Grown CdZnTe Detectors and their Influence on Trapping of Charge Carriers R. Gula, U. N. Roya, and R. B. Jamesa,c aBrookhaven National Laboratory, Upton, NY, 11073, USA bSavannah River National Laboratory, Aiken, SC 29808, USA P1-25 Properties of CdZnTe films deposited on polyimide substrates by close-spaced sublimation K. Tang a, J. Huang a, Q.M. Gu a, Y.X. Lu a, Y. Shen a, J.J. Zhang a, L.J. Wang a, Yicheng Lu b a School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China b Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA.

* Student paper

P1-26 Study on the Passivation Effect of DLC on CdZnTe Device Jia-huaMin, Xiao-yanLiang, Zhao-xinLiu, Liu-qingYang, Ji-junZhang, Lin-junWang, Yue Shen, Yue Zhao School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China P1-27 Numerical Simulation of three-stage heat treatment on CdZnTe crystal Xiao-yan Liang, Jia-huaMin, Ji-junZhang, Lin-junWang, Yue Shen, Yue Zhao School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China P1-28* Effect of Dopant Oxidation State and Controlled Nitrogen Annealing Atmosphere on the Functional Properties of Zinc Oxide Miguel A. Santiago Rivera,a B. Gina Montes Albino,b C. Oscar Perales Pérezc a Dept. of Physics, University of Puerto Rico, Mayagüez PR 00681-9000, U.S.A. b Mechanical Engineering Dept., Univ. of Puerto Rico, Mayagüez PR 00681-9000, U.S.A. c Eng. Sci. and Materials Dept., Univ. of Puerto Rico, Mayagüez PR 00681-9000, U.S.A. P1-29 Polarity-dependent selective area growth of ZnO nanorods by chemical bath deposition T. Cossuet,a E. Appert,a J.-L. Thomassin,b F. Donatini,c A. M. Lord,d J. Pernot,c,e and V. Consonnia a Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France b Univ. Grenoble Alpes, CEA-Grenoble, INAC-PHELIQS-LATEQS, F-38000 Grenoble, France c Univ. Grenoble Alpes, CNRS, Institut NEEL, F-38042 Grenoble, France d Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP, UK e Institut Universitaire de France, 103 Boulevard Saint-Michel, F-75005 Paris, France P1-30 Time-resolved photoluminescence of ZnO nanostructures V. Kartazayeu1, K. Zhao2, A. Shen2, S. K. Gayen1 1Department of Physics, Center for Discovery and Innovation, The City College and the Graduate Center of CUNY, 160 Convent Avenue, New York, NY 10031 2Department of Electrical Engineering, Center for Discovery and Innovation, The City College of CUNY, 160 Convent Avenue, New York, NY 10031

* Student paper

Tuesday, September 26, 2017 Morning Session 8:45am – Plenary 2: The story of chalcogenides: from 3D to 2D and beyond Jacek Furdyna, University of Notre Dame, Notre Dame, IN, USA 2-Dimensional Materials 1 9:30am – D-1* Effects on magnetic properties of ferromagnetic semiconductor GaMnAs by interfacing with topological insulator Bi2Se3 S.-K. Bac,a S. Lee, a S. Choi, a K. J. Lee, a J. Chang, a H. Lee a, S. Lee, a X. Liu b , M. Dobrowolska, b and J. K. Furdyna b a Department of Physics, Korea University, Seoul, Republic of Korea b Department of Physics, University of Notre Dame, Notre Dame, IN 46556, U.S.A 9:45am – D-2* Growth of Bi2Se3 and Bi2Te3 layers and Bi2Se3/Bi2Te3 bi-layers by molecular beam epitaxy Ido Levy1,3, Thor Axtmann Garcia1,3, Sharmin Shafique1, Vasilios Deligiannakis2,3 and Maria C. Tamargo1,3

1 Department of Chemistry, The City College of New York, NY 10031 2 Department of Physics, The City College of New York, NY 10031 3 Chemistry and Physics Programs, Graduate Center of CUNY, New York, NY 10016 10:00am – D-3 Vapor phase growth of high quality Bi-Te compounds using elemental Bi and Te sources O. Concepción,a A. Escobosa,b O. de Meloa,c a Programa de Doctorado en Nanociencias y Nanotecnologías, CINVESTAV, IPN, México b Sección de Electrónica del Estado Sólido, Departamento de Ingeniería Eléctrica, CINVESTAV, IPN, México c Physics Faculty, University of Havana, 10400 La Habana, Cuba 10:15am – D-4* van der Waals epitaxy of CdTe thin film using graphene as buffer layer D. Mohantya, Z. Lu, X. Sun, S. Zhangb, M. Washingtonb, G-C. Wangb, T-M. Lub and I. B. Bhata Center for Materials, Devices, and Integrated Systems a Electrical, Computer and Systems Engineering Department, b Physics, Applied Physics and Astronomy Department, Rensselaer Polytechnic Institute, Troy, NY 12180 10:30am – Coffee Break

* Student paper

Photovoltaics 11:00am – Invited : Thin film CdTe Photovoltaics for Space Stuart J C Irvine, Centre for Solar Energy Research, Swansea University 11:30am – E-1* Engineering the Light-Matter Interactions of Ultrasmall CdSe Quantum Dots via Modification of Surface Species for Light Harvesting Applications M. Webster,a K. Pepa,a K. Dominguez,a V. Menonb, G. Lopezc, M. Castaldi,a I. Kretzschmara a Department of Chemical Engineering, City College of the City University of New York, 160 Convent Avenue and 140th Street, New York, NY 10031 b Department of Physics, City College of the City University of New York, Center for Discovery and Innovation (CDI), 85 St. Nicholas Terrace, New York, NY 10031 c Department of Chemistry, Lehman College of the City University of New York, 250 Bedford Park Boulevard West Bronx, NY 10468 11:45am – E-2 Charge transfer at organic-inorganic semiconductor interfaces – dye layers on ZnO I. Meyenburg,a N. Hofeditz,a J. Falgenhauer,b D. Schlettwein,b and W. Heimbrodt,a

a Department of Physics and Material Sciences Center, Philipps-University Marburg, Renthof 5,D- 35032 Marburg, Germany b Institute of Applied Physics, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany 12:00pm – E-3* Growth of Cl-doped ZnTeO by MBE for intermediate band solar cells S. Tsutsumia, K. Matsuoa, T. Tanakaa, K. Saitoa, Q. Guoa, T. Tayagakib, K. M. Yuc, and W. Walukiewicz d,e a Saga University, Saga 840-8502, JAPAN b National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8560, JAPAN c City University of Hong Kong, Kowloon, Hong Kong d Lawrence Berkeley National Laboratory, Berkeley, California 94720, U.S.A e University of California at Berkeley, Berkeley, CA 94720, U.S.A 12:14pm – E-4 Late News 12:30pm – Lunch

* Student paper

Tuesday, September 26, 2017 Afternoon Session ZnO and ZnO-Based Materials 1 2:15pm – F-1 Hybrid Multiple Diffraction: New XRD method to characterize homoepitaxial wurtzite semipolar heterostructures E. de Prado,a M. C. Martinez-Tomas,a C. Deparis,b V. Munoz-Sanjosé, a and J. Zuniga-Perezb a Dpto. Fisica Aplicada y Electromagnetismo, Universitat de València, Dr. Moliner 50, 46100 Burjassot, SPAIN b UCA, CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, FRANCE 2:30pm – F-2 Self-organized ZnMgO nanocolumns with ZnO/ZnMgO quantum wells grown on different substrates by MBE technique M.A. Pietrzyk, M. Stachowicz, A. Reszka, A. Wierzbicka, A. Kozanecki Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46 PL-02668, Warsaw, Poland 2:45pm – F-3 ZnO nanowire facets transformation induced by Ga doping V. Sallet, S. Hassani, C. Sartel, C. Vilar, A. Lusson, P. Galtier GEMAC, CNRS – Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 avenue des Etats-Unis, 78035 Versailles Cedex, France 3:00pm – F-4 An axial ZnO/ZnMgO heterostructures grown on the top of ZnO microrods Henryk Teisseyre 1,2, Dawid Jarosz1,Agnieszka Pieniążek1, Bartłomiej S. Witkowski1, , Sławomir Kret1, Michał Boćkowski2, Marek Godlewski1 ,Adrian Kozanecki1 and Bogdan J. Kowalski1 1 Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warsaw, Poland 2 Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37,01-142 Warsaw, Poland 3:15pm – F-5 Improvement of the photoconductive characteristics of ZnO single crystals by annealing T. Abe a, Y. Nameshida a, A. Miura a, A. Nakagawa a, T. Chiba a, Y. Kashiwaba b, M. Daibo a, I Niikura a, Y. Kashiwaba a, H. Osada a a Iwate University, Morioka 020-8551, Japan b National Institute of Technology, Sendai College, Sendai 989-3128, Japan 3:30pm – Coffee Break

* Student paper

Devices 2 4:00pm – G-1* Monolithic II-VI and III-V Hybrid Quantum Cascade Detectors T. A. Garcia,a,c Y. Kaya,b D. L. Sivco,b S. Shafique,a C. Gmachl,b M. C. Tamargoa,c a Department of Chemistry, The City College of New York, New York, NY, USA b Department of Electrical Engineering, Princeton University, Princeton, New Jersey, USA c Chemistry Program, The Graduate Center, CUNY, New York, New York 10016, USA 4:15pm – G-2 Novel ZnO Based Ultraviolet Photodetectors Hongyu Chena,b, Xiaosheng Fangb, Bingsheng Lia a Department of Physics, Harbin Institute of Technology, Harbin, People's Republic of China b Department of Materials Science, Fudan University, Shanghai, People's Republic of China 4:30pm – G-3* Local strain and orientation mapping of HgCdTe photodiodes A. Tuaza, P. Balleta, X. Biquardb, F. Rieutordb a Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38054 Grenoble, France. b Univ. Grenoble Alpes, CEA, INAC-MEM, 17 rue des Martyrs, 38054 Grenoble, France. 4:45pm – G-4 Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates Ryosuke Amagasu, Kennta Ishii, Katsumi Kishino, and Ichirou Nomura Department of Engineering and Applied Sciences, Sophia University 7-1 Kioi-cho, Chiyoda-ku, Tokyo, 102-8554, Japan 5:00pm – G-5 Effect of intense optical excitation on the internal electric field evolution in CdTe gamma-ray detectors K. Suzuki,a Y. Ichinohe,a S. Setob a Hokkaido University of Science, Maeda 7-15, Teine Sapporo, 006-8585, Japan b National Institute of Technology, Ishikawa College, Tsubata, Ishikawa, 929-0392, Japan. 5:15pm – G-6 Late News

* Student paper

Wednesday, September 27, 2017 Morning Session Magnetic Materials & Spin Phenomena 9:00am – Invited: Unraveling the electron pairing mechanism of FeSe by MBE and STM Canli Song, Tsinghua University, Beijing, China 9:30am – Invited: Spin-orbit twisted spin waves in magnetic quantum wells Florent Perez, Institut des Nanoscience de Paris, CNRS, Paris, France 10:00am – H-1 Condensation Threshold of Semimagnetic Cavity Polaritons in Magnetic Field J.-G. Rousset, M. Król, R. Mirek, K. Lekenta, J. Szczytko, B. Piętka, M. Nawrocki, W. Pacuski Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland 10:15am – H-2 Optical transmission studies of semimagnetic polaritons B. Seredyński, M. Król, P. Starzyk, R. Mirek, J.-G. Rousset, D. Stephan, J. Szczytko, M. Nawrocki, B. Piętka, W. Pacuski Intitute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland 10:30am – Coffee Break 11:00am – H-3 Asymmetric Stokes and anti-Stokes Raman shifts of the paramagnetic Mn2+ resonance in ZnMnSe quantum wells J. Debus a, D. Kudlacik a, J. J. Schindler a, K. V. Kavokin b, V. F. Sapega b, D. R. Yakovlev a,b, A. Waag c, and M. Bayer a,b a Experimental Physics 2, TU Dortmund University, Dortmund, Germany b Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia c Institute of Semiconductor Physics, University of Braunschweig, Braunschweig, Germany 11:15am – H-4 * Precise Determination of Strain-related Spin Hamiltonian Parameters by Angle-dependent Optically Detected Magnetic Resonance in (Cd,Mn)Te/(Cd,Mg)Te Quantum Wells A. Bogucki, M. Goryca, W. Pacuski and P. Kossacki Faculty of Physics, Institute of Experimental Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warszawa, Poland 11:30am – H-5 Magnetic Investigation of Hybrid Semiconductor/Ferromagnet ZnTe/Co Nanowire Array Grown by VLS and MBE Methods P.A.Misiuna, T.Wojciechowski, P.Dłużewski, S.Lewińska, A.Ślawska-Waniewska, A.Wawro, E Milińska, T.Wojtowicz and +L.T.Baczewski Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland 11:45am – H-6 Individual Fe2+ Ion in a Quantum Dot T. Smoleński, T. Kazimierczuk, M. Goryca, A. Golnik, P. Kossacki, W. Pacuski Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland

* Student paper

Wednesday, September 27, 2017 Afternoon 12:30pm – Conference Excursion

* Student paper

Thursday, September 28, 2017 Morning Session 8:45am – Plenary: Optical properties of II-VI nanoplatelets Alexander Efros, Naval Research Laboratory, Washington, DC, USA Colloidal Quantum Dots 1 9:30am – I-1 Effect of dangling bonds on the dark exciton recombination and spin polarization in CdSe colloidal nanostructures A. V. Rodina,a A. A. Golovatenko,a E.V. Shornikova,b,c D. R. Yakovlev,a,b L. Biadala,d M. Nasilowski,e B. Dubertet,e Al. L. Efros,f M. Bayer a,b a Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia b Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany. c Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia d Université des Sciences et Technologies de Lille 1, Cité Scientifique, F-59655, Lille, France e Laboratoire de Physique et d‘Etude des Matériaux, 75231 Paris, IEMN, CNRS, France f Naval Research Laboratory, 20375, Washington DC, USA 9:45am – I-2 Addressing exciton fine structure in colloidal two-dimensional CdSe nanoplatelets Elena V Shornikova1,2, Louis Biadala1,3, Michel Nasilowski,4 Benoit Dubertet,4 Dmitri R. Yakovlev1,5, and Manfred Bayer1,5 1Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, Germany 2Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 3IEMN, CNRS, Villeneuve-d'Ascq, France 4Laboratoire de Physique et d'Etude des Matériaux, ESPCI, CNRS, Paris, France 5Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia 10:00am – I-3* Tuning of the Photoluminescence of ZnSe(S) Quantum Dots by Promoting Structural Defects through Surface Chemical Interactions with Thiol Species E. Calderón-Ortiza, S. Bailón-Ruizb, J.F. Rodriguez-Orengoa and O. Perales-Perezc a Department of Biochemistry-Medical Sciences Campus UPR, P.O. Box 365067 San Juan, PR 00936-5067 b Department of Chemistry-UPR Ponce, University of Puerto Rico at Ponce ,PR 00734 c Department of Engineering Science & Materials-UPR Mayagüez, Engineering Science University of Puerto Rico at Mayaguez, PR 00680 10:15am – I-4* The Role of Electron Delocalization on Exciton-Phonon Coupling in CdSe/CdS Colloidal Nanocrystals Hendrik Utzat a, Igor Coropceanuab, Jason Yooa, and Moungi G. Bawendia a Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue Cambridge, MA 02139 b Department of Chemistry and James Franck Institute, University of Chicago, Illinois 60637 10:30am – Coffee Break

* Student paper

Layered Materials 2 11:00am – Invited: MBE growth of TMDs, their alloys and heterostructures Huili (Grace) Xing, Cornell University, Ithaca, NY, USA 11:30am – J-1 Angle resolved photoemission studies of the band structure of the rhenium dichalcogenides L. S. Harta, J. L. Webba, S. Dalea, S. J. Bendinga, M. Mucha-Kruczynskia, D. Wolversona, C. Chenb, J. Avilab, M. C. Asensiob a Centre for Nanoscience and Nanotechnology, Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom b Synchrotron SOLEIL, Saint Aubin, and Université Paris-Saclay, BP 48 91192 Gif-surYvette, France 11:45am – J-2* Tuning valley polarization in a WSe2 monolayer with a tiny magnetic field T. Smoleńskia, M. Gorycaa, M. Koperski,a,b C. Faugeras,b T. Kazimierczuk,a A. Bogucki,a K. Nogajewski,b M. Potemski,a,b P. Kossackia a Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland b Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25 Rue des Martyrs, Grenoble 38042, France 12:00pm – J-3 Nanoplasmonic Array Induced Modified Emission Properties from Monolayer WSe2 B. Roy, M. Blauth, F. Sigger, M. Kaniber and J. Finley Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4, 87548 Garching bei Munich, Germany 12:15pm – J-4 Late News 12:30pm – Lunch

* Student paper

Thursday, September 28, 2017 Afternoon Session Colloidal Quantum Dots 2 2:15pm – Invited : Spin dynamics of charged and neutral excitons in colloidal nanocrystals Dmitri Yakovlev, TU Dortmund, Dortmund, Germany 2:45pm – K-1 Efficient Photon Upconversion in Semiconductor Nanostructures: Tailoring Photon Energy Gain via Composition- and Size-controlled Bandgap Engineering C.C. Milleville,a E.Y. Chen,a Z. Li,a K. Lennon,b D.G. Sellers, a J.M.O. Zide, a M.F. Dotya a Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716 USA b Department of Chemical and Biomedical Engineering, University of Delaware, Newark, DE 19716 USA 3:00pm – K-2* Preparation of CdTe Quantum Dot Superlattices Self-Organized with Electrostatic Interaction and Their Optical Properties T. Watanabe, T. Lee, Y. Lee, and D. Kim Department of Applied Physics, Graduate School of Engineering, Osaka City University 3-3-138, Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan 3:15pm – K-3 Synthesis and Modification of ZnTe and ZnTe/CdS Core-Shell Quantum Dots Surfaces with Amine Containing Organic Molecules/Amino Acids to Promote Adsorption of CO2 M. Sohel Natural Sciences Department, Hostos Community College, 500 Grandconcourse, Bronx, New York 10451, U. S. A. 3:30pm – Coffee Break 4:00pm – K-4 Ti-doping on the generation of ROS (Singlet Oxygen) under light-irradiated conditions Milton Alberto Martínez Julca,a,b Oscar Juan Perales-Pérez,b a Graduate Program in Bioengineering, University of Puerto Rico, Mayaguez Campus; Calle Acacias 36 – Mayaguez PR 00680 b Department of Engineering Science and Materials, University of Puerto Rico, Mayaguez; Department of Engineering Science and Materials, Stefani Building, Office 318-Mayaguez PR 00681 4:15pm – K-5 Study of the Toxicology of ZnO Nanoparticles with Zebrafishes Li Li,a Fanyu Zhou,a Kai-Kai Liu,b Bingsheng Li,c Chong-Xin Shan,d and Aidong Shene a School of Life Science and Technology, HIT, Harbin 150080, China b Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China c Department of Physics, Harbin Institute of Technology (HIT), Harbin 150080, China d School of Physical Engineering, Zhengzhou University, Zhengzhou 450052, China e Department of Electrical Engineering, The City College of New York, New York 10031, USA 4:30pm – Late News 5:00pm – Poster Session 2 7:00pm – Conference Banquet

* Student paper

Thursday, September 28, 2017 5:00pm – 6:30pm – Poster Session 2 P2-1 Growth of High quality ZnTe epilayers on Sapphire substrates with Multi-Buffer Layer T. Nakasu,a M. Kobayashi,a,b T. Asahic a Dept. of Elec. Eng. & Biosci., Waseda Univ., 3-4-1, Okubo, Shinjuku, Tokyo, Japan b Kagami Memorial Res. Inst. For Mater. Sci. & Technol., 2-28-6, Nishiwaseda, Waseda Univ., Shinjuku, Tokyo, Japan c Technol. Dev. Center, JX Nippon Mining & Metals Corps., 1-1-2, Otemachi, Chiyoda, Tokyo, Japan P2-2* Effects of substrate materials on boron and gallium co-doped ZnO films by RF magnetron sputtering Y.C. Ma a, J. Huang a, K. Tang a, Y.X. Lu a, B. Li a, L.J. Wang a, Yicheng Lu b a School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China b Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA P2-3 The effects of substrate temperatures and nitrogen partial pressures on the properties of Al-N co-doped ZnO thin films prepared by RF magnetron sputtering Y. F. Wang, a B. S. Li, a D. Y. Song, a L. D. Yu, a X. J. Wang, a Y. Sui, a Z. L. Liu, a and A. D. Shen b a Department of Physics, Harbin Institute of Technology (HIT), Harbin 150080, China b Department of Electrical Engineering, The City College of New York, New York 10031, USA P2-4 Preparation and Characterization of Cu2ZnSn(S,Se)4 Thin Films using Ball Milled Cu2ZnSnS4 Nanoparticles S. Taki,a K. Moriuchi,a A. Uruno,a and M. Kobayashi a,b a Dept. of Elec. Eng. & Biosci., Waseda Univ., Shinjuku, Tokyo, Japan. b Kagami Mem. Res. Inst. for Mat. Sci. & Technol. Waseda Univ., Shinjuku, Tokyo, Japan P2-5 Structural and optical characterization of two-color ZnCdSe/ZnCdMgSe quantum well infrared photodetectors. L. Hernandez-Mainet, a G. Chen, b A. Shen, b M.C. Tamargo a a Department of Chemistry, The City College of New York, New York, N.Y 10031 b Department of Electrical Engineering, The City College of New York, New York, N.Y 10031 P2-6 Investigating the Optical Properties of Topological Insulators using Temperature-dependent Spectroscopic Ellipsometry E. T. Holmgren,a F. C. Peiris,a X. Liu,b J. K. Furdynab a Department of Physics, Kenyon College, Gambier, OH 43022, USA. b Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA P2-7 Development of Ultraviolet Avalanche Photodiodes using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure T. Abe, S. Uchida, K. Tanaka, T. Fujisawa, T. Kawahara, K. Nakagawa, Y. Ichikawa, H. Kasada, K. Ando, K. Akaiwa, K. Ichino Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

* Student paper

P2-8 The influence of transparent conductive ZnO thin layer on performance of CdZnTe photodetectors K. Tang a, J. Huang a, Q.M. Gu a, B. Li a, Y.B. Shen a, Q.M. Gu a, Y. Shen a, L.J. Wang a, Yicheng Lub a School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China b Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA P2-9* Performance optimization of CdZnTe films on nitride compound substrates for UV photodetector Zongkun Zhang, Yue Shen, Yuhao Xu, Jian Huang, Meng Cao, Feng Gu, Linjun Wang Shanghai university,No. 99, Shangda Road, Baoshan District, Shanghai, China P2-10 Impurity-Bound Polaronic States in ZnSe Quantum Dots under Electric Field: Image Charge Effect A. Asatryan, L. Vardanyan, A. Vartanian Department of Solid State Physics, Yerevan State University, 1, Al. Manoogian, 0025, Yerevan, Armenia P2-11 Time-resolved Photoluminescence Study of Interface-state-phonon Assisted Energy Relaxation in CdSe Quantum Dots Shengkun Zhang,a Aidong Shen,b Maria C. Tamargo,c Iosif Zeylikovich, Taposh K. Gayen, Bidyut Das, Robert R. Alfanod a Department of Science, Borough of Manhattan Community College, CUNY, 199 Chambers Street, New York, NY 10007 b Department of Electrical Engineering, City College of New York, CUNY, 160 Convent Avenue, New York, NY 10031 c Department of Chemistry, City College of New York, CUNY, 160 Convent Avenue, New York, NY 10031 d Department of Physics, City College of New York, CUNY, 160 Convent Avenue, New York, NY 10031 P2-12 Antireflective Photonic Structure for Coherent Nonlinear Spectroscopy of Single Quantum Dots W. Pacuski,a J.-G. Rousset,a,b V. Delmonte,b T. Jakubczyk, b K. Sobczak,c J. Borysiuk,a K. Sawicki,a E. Janik,a

J. Kasprzak b a Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland b Institut Néel, CNRS et Université Grenoble Alpes, Grenoble, France c Biological and Chemical Research Centre, University of Warsaw, Warsaw, Poland P2-13 Tourmaline@ZnO core–shell structural composites: fabrication, characterization, and optical properties L. X. Fu, Y. Guo, Q. H. Zhang, J. H. Min, L. J. Wang School of Materials Science and Engineering, Shanghai University, 200444, China P2-14 Synthesis, Characterization and Bactericide Properties of Pure and Li Doped ZnO Nanoparticles for Alternative Water Disinfection Methods Abdiel Oquendo-Cruz1, Oscar Perales-Pérez2 1Department of Chemistry, University of Puerto Rico, Mayagüez Campus, Mayagüez P.R. 2Department of Engineering Science and Materials, University of Puerto Rico, Mayagüez Campus, Mayagüez P.R.

* Student paper

P2-15 Synthesis and Luminescence enhancement of Impurity doped II-VI semiconductor nanocrystals U. S. Patle,a and Manas Sahu,b a Department of Physics, Govt. Narmada Post Graduate College, Hoshangabad M.P.- INDIA. b Department of Physics, Indira Kala Sangit Vishwavidyalaya, Khairagarh, C. G.,- INDIA P2-16 Effects of Ternary Mixed Crystals in Spherical Core-Shell Quantum Dots Y. Xing, X.X. Liang and Z. P. Wang School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, People’s Republic of China P2-17 Graphene Modifications in Mixture of ZnO and Carbon Nanocrystals at Mechanical Processing T. Torchynskaa, G. Polupanb, and M. Kakazeyc a Instituto Politécnico Nacional, ESFM, U.P.A.L.M. México City, 07738, MEXICO b Instituto Politécnico Nacional, ESIME, U.P.A.L.M. México City, 07738, MEXICO c CIICAp - Universidad Autónoma del Estado de Morelos, Cuernavaca, MEXICO P2-18 Antibody impact on emission and energy band profile in bioconjugated CdSeTe/ZnS quantum dots T. Torchynska Instituto Politécnico Nacional, ESFM, U.P.A.L.M. México City, 07738, MEXICO P2-19* Numerical Simulation of Cu Migration in CdTe Solar Cells Under Stress Conditions D. Guo and D. Vasileska School of Electrical, Computer and Energy Engineering Arizona State University, Tempe, Arizona 85287-5706, USA P2-20 Effect of strong potential fluctuations in CZTSSe thin film solar cells on admittance and optical spectroscopy F. Ducroquet a,b , L. Grenet a,c, R. Fillon a,c, J. Bleuse a,d, and H. Mariette a,d a University of Grenoble-Alpes (UGA), France, b Grenoble INP, IMEP-LaHC, Grenoble, France c CEA-LITEN, Grenoble, France d ”Nanophysique et Semiconducteurs” group, CEA/INAC and CNRS/Institut Néel,Grenoble, France P2-21 ZnO Nanowire-based type II heterostructures for ETA Solar Cells R. Parize,a T. Cossuet,a A. Katerski,b I. Gromyko,b O. Chaix-Plucherya, A. Crisci,c L. Rapenne,a H. Roussel,a E. Kärber,b A. Nourdine,d E. Blanquet,c D. Munoz-Rojas, a M. Krunks,b E. Appert,a and V. Consonnia a Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France b Tallinn University of Technology, Ehitajate tee 5, Tallinn 19086, Estonia c Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP, F-38042 St-Martin d’Hères, France d Univ.Savoie Mt Blanc, CNRS, LEPMI, F-73000 Chambéry, France P2-22 Tunable morphology and doping of ZnO nanowires by chemical bath deposition using aluminium nitrate C. Verrier,a,b E. Appert,a O. Chaix-Pluchery,a L. Rapenne,a Q. Rafhay,b A. Kaminski-Cachopo,b V. Consonnia a Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France b Univ. Grenoble Alpes, CNRS, Grenoble-INP, IMEP-LAHC, Minatec, F-38000 Grenoble, France

* Student paper

P2-23 Photoluminescence from annealed thin ALD-ZnO films implanted with different RE ions E. Guziewicz1, R. Ratajczak2, C. Mieszczynski2, S. Prucnal3, M. Stachowicz1, D. Snigurenko1, T.A Krajewski1, K. Kopalko1, W. Skorupa3 and A.Turos4,2 1 Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland 2 National Centre for Nuclear Research, A. Soltana 7, 05-400 Otwock-Swierk, Poland 3 Helmholtz Zentrum Dresden – Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany 4 Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland P2-24 Preparation of a non-polar ZnO film on a single crystal NdGaO3 substrate by the rf sputtering method Y. Kashiwaba,a Y. Tanaka,a M. Sakuma,a T. Abe,b Y. Imai,a K. Kawasaki,a A. Nakagawa,b I. Niikura,b Y. Kashiwaba,b H. Osada,b a National Institute of Technology, Sendai College, Sendai 989-3128, Japan b Iwate University, Morioka 020-8551, Japan P2-25 Evolution of Photoluminescence in Stoichiometric ZnO Single Crystal Thin Film under Different Annealing Temperatures B. S. Li,a B. H. Li,b and D. Z. Shenb a Department of Physics, Harbin Institute of Technology, Harbin 150080, China b Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China P2-26 Analytical model of blocking surface recombination of photo-excited charge carriers in semiconductors by near-surface graded-gap field V. Kholodnov a, b aV.A. Kotelnikov Institute of Radio Engineering and Electronics Russian Academy of Sciences, 11, Mokhovaya street, building 7, Moscow, 125009, Russia bMoscow Institute of Physics and Technology (MIPT TU), 9, Institutskiy per., Dolgoprudny, Moscow Region, 141701, Russia P2-27 Phonon-Mediated Dynamics in Semiconductor Nanostructures and Nanocomposites D. S. Kilin,a D. J. Vogel,b A. Fordea a Department of Chemistry and Biochemistry, North Dakota State University, Fargo, ND 58108 b Department of Chemistry, University of South Dakota, Vermillion, SD 57069 P2-28 The Local Electron Interaction with Point Defects in Sphalerite Zinc Selenide: Calculation from the First Principles O. Malyk,

S. Syrotyuk

Lviv Polytechnic National University, Semiconductor Electronics Department S. Bandera Street 12, 79013, Lviv, Ukraine P2-29 Structural and optical properties of Al-doped ZnO nanocrystals prepared by ultrasound spray pyrolysis B. El Filali1, T. V. Torchynska2, and J. A. Jaramillo Gomez1 1Instituto Politécnico Nacional, UPIITA, México D.F.07320, México 2Instituto Politécnico Nacional, ESFM, México D.F.07738, México

* Student paper

Thursday, September 28, 2017 7:00pm– Conference Banquet

* Student paper

Friday, September 29, 2017 Morning Session ZnO and ZnO-based materials 2 9:00am – Invited: Deep-ultraviolet luminescence of highly-crystalline rocksalt-structured MgxZn1-xO (x>0.5) films on MgO substrates Kentaro Kaneko, Kyoto University, Kyoto, Japan 9:30am – L-1 Intersubband polarons in ZnO/MgZnO MQWs A. Hierro,a M. Montes Bajo,a J. Tamayo-Arriola,a M. Hugues,b J.M. Ulloa,a N. Le Biavan,b R. Peretti,c F. H. Julien,d J. Faist,c and J.M. Chauveaub a ISOM and Dpto. Ing. Electronica, Universidad Politecnica de Madrid, Spain b Université Côte d'Azur, CNRS, CRHEA, Valbonne, France c Institute for Quantum Electronics, ETH Zurich, Switzerland d C2N at the University Paris-Sud, University Paris-Saclay, France 9:45am – L-2 Demonstration of Ultraviolet Stark-effect Optical Modulators using non-polar ZnO/ZnMgO Quantum Wells T. Abe, S. Iwagashita, D. Kimura, H. Kasada, K. Ando, K. Akaiwa, K. Ichino Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan 10:00am – L-3 Transient four-wave mixing on trions and donor-bound excitons in ZnO semiconductor nanostructures S. V. Poltavtseva,b, A. N. Kosareva,c, Yu.V. Kapitonova,d, I.A. Akimova,c, D. R. Yakovleva,c, S. P. Hoffmanne, M. Alberte, C. Meiere, T. Meiere, S. Sadofevf, J. Pulsf, and M. Bayera,c a Experimentelle Physik 2, Technische Universität Dortmund, 44221 Dortmund, Germany b Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia c Ioffe Physical-Technical Institute, RAS, 194021 St. Petersburg, Russia d St. Petersburg State University, 199034 St. Petersburg, Russia e Department Physik & CeOPP, Universität Paderborn, 33098 Paderborn, Germany f AG Photonik, Institut für Physik, Humboldt-Universität zu Berlin, D-12489 Berlin, Germany 10:15am – L-4 Local Optical Luminescence of Nitrogen-Doped ZnO Films grown under Oxygen-Rich Conditions E. Guziewicz, E. Przezdziecka, D. Snigurenko, D. Jarosz, B.S. Witkowski and W. Paszkowicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL- 02668 Warsaw, Poland 10:30am – Coffee Break

* Student paper

Devices 3 11:00am – M-1* Type-II CdSe/ZnTe Quantum Wells for Short Wavelength Intersubband Device Applications V. Deligiannakis1,3, S. Dhomkar2,3, K. A. Dunn4, I. L. Kuskovsky2, 3, M. C. Tamargo1,3 1 City College of CUNY, New York, New York 10031, USA 2 Queens College of CUNY, Flushing, New York 11367, USA 3 The Graduate Center of CUNY, New York, New York 10016, USA 4 College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203, USA 11:15am – M-2 Evaluation of MgSe/ZnCdSe conduction band hetero barriers on InP substrates using n-i-n diodes Yudai Momose, Takumi Sakai, Katsumi Kishino, and Ichirou Nomura Department of Engineering and Applied Sciences, Sophia University 7 - 1 Kioi - cho, Chiyoda - ku, Tokyo, 102 - 8554, Japan 11:30am – M-3 Infrared Sensitive CdTe p-i-n Diodes with PbSe Quantum Wells Embedded in Intrinsic Layers S.Chusnutdinow, M. Szot, T. Wojtowicz and G. Karczewski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland 11:45am – M-4 MgSe/ZnCdSe II-VI compound semiconductor resonant tunneling diodes on InP substrates Takumi Sakai, Yudai Momose, Katsumi Kishino, and Ichirou Nomura Department of Engineering and Applied Sciences, Sophia University 7-1 Kioi-cho, Chiyoda-ku, Tokyo, 102-8554, Japan 12:00pm – M-5 Late News 12:30pm – Lunch 2:15pm – Closing Ceremony and Awards