mosfet - transfer multisort elektronik€¦ · 2 optimostm5 power-transistor, 80 v bsc030n08ns5...

MOSFETMetalOxideSemiconductorFieldEffectTransistor

OptiMOSTM

OptiMOSTM5Power-Transistor,80VBSC030N08NS5

DataSheetRev.2.2Final

PowerManagement&Multimarket

2

OptiMOSTM5Power-Transistor,80V

BSC030N08NS5

Rev.2.2,2014-11-10Final Data Sheet

12

34

56

78

43

21

56

78

SuperSO8

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

1DescriptionFeatures•OptimizedforhighperformanceSMPS,e.g.sync.rec.•100%avalanchetested•Superiorthermalresistance•N-channel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 80 V

RDS(on),max 3.0 mΩ

ID 100 A

Qoss 73 nC

QG(0V..10V) 61 nC

Type/OrderingCode Package Marking RelatedLinksBSC030N08NS5 PG-TDSON-8 030N08NS -

1) J-STD20 and JESD22

3


BSC030N08NS5


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4


BSC030N08NS5


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID---

---

10010022

AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TC=25°C,RthJA=50K/W1)

Pulsed drain current2) ID,pulse - - 400 A TC=25°C

Avalanche energy, single pulse3) EAS - - 250 mJ ID=50A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot--

--

1392.5 W TC=25°C

TA=25°C,RthJA=50K/W1)

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

3Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - 0.5 0.9 K/W -

Thermal resistance, junction - case,top RthJC - - 20 K/W -

Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See figure 3 for more detailed information3) See figure 13 for more detailed information

5


BSC030N08NS5


4Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=95µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=80V,VGS=0V,Tj=25°C

VDS=80V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

2.63.4

3.04.5 mΩ VGS=10V,ID=50A

VGS=6V,ID=25A

Gate resistance1) RG - 1.6 2.4 Ω -

Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5DynamiccharacteristicsValues


Input capacitance1) Ciss - 4300 5600 pF VGS=0V,VDS=40V,f=1MHz

Output capacitance1) Coss - 700 910 pF VGS=0V,VDS=40V,f=1MHz

Reverse transfer capacitance1) Crss - 32 56 pF VGS=0V,VDS=40V,f=1MHz

Turn-on delay time td(on) - 20 - ns VDD=40V,VGS=10V,ID=50A,RG,ext=3Ω

Rise time tr - 12 - ns VDD=40V,VGS=10V,ID=50A,RG,ext=3Ω

Turn-off delay time td(off) - 43 - ns VDD=40V,VGS=10V,ID=50A,RG,ext=3Ω

Fall time tf - 13 - ns VDD=40V,VGS=10V,ID=50A,RG,ext=3Ω

1) Defined by design. Not subject to production test.

6


BSC030N08NS5


Table6Gatechargecharacteristics1)Values


Gate to source charge Qgs - 20 - nC VDD=40V,ID=50A,VGS=0to10V

Gate charge at threshold Qg(th) - 12 - nC VDD=40V,ID=50A,VGS=0to10V

Gate to drain charge2) Qgd - 13 19.5 nC VDD=40V,ID=50A,VGS=0to10V

Switching charge Qsw - 21 - nC VDD=40V,ID=50A,VGS=0to10V

Gate charge total Qg - 61 76 nC VDD=40V,ID=50A,VGS=0to10V

Gate plateau voltage Vplateau - 4.6 - V VDD=40V,ID=50A,VGS=0to10V

Gate charge total, sync. FET Qg(sync) - 52 - nC VDS=0.1V,VGS=0to10V

Output charge2) Qoss - 73 97.0 nC VDD=40V,VGS=0V

Table7ReversediodeValues


Diode continuous forward current IS - - 100 A TC=25°C

Diode pulse current IS,pulse - - 400 A TC=25°C

Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C

Reverse recovery time2) trr - 54 108 ns VR=40V,IF=50A,diF/dt=100A/µs

Reverse recovery charge2) Qrr - 94 188 nC VR=40V,IF=50A,diF/dt=100A/µs

1) See ″Gate charge waveforms″ for parameter definition2) Defined by design. Not subject to production test.

7


BSC030N08NS5


5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 1750

20

40

60

80

100

120

140

160

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 1750

20

40

60

80

100

120

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-110-3

10-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

8


BSC030N08NS5


Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

40

80

120

160

200

240

280

320

360

400

7 V

10 V

6 V

5.5 V

5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 50 100 150 200 250 300 350 4000

1

2

3

4

5

6

7

8

5 V 5.5 V 6 V

7 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

40

80

120

160

200

240

280

320

360

400

150 °C 25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

40

80

120

160

gfs=f(ID);Tj=25°C

9


BSC030N08NS5


Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

1

2

3

4

5

6

max

typ

RDS(on)=f(Tj);ID=50A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800

1

2

3

4

5

950 µA

95 µA

VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C150 °C25 °C, max150 °C, max

IF=f(VSD);parameter:Tj

10


BSC030N08NS5


Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

25 °C100 °C125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 60 700

1

2

3

4

5

6

7

8

9

10

40 V

16 V

64 V

VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18076

78

80

82

84

86

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

11


BSC030N08NS5


6PackageOutlines

Figure1OutlinePG-TDSON-8,dimensionsinmm

12


BSC030N08NS5


RevisionHistoryBSC030N08NS5

Revision:2014-11-10,Rev.2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-07-04 Release of final version

2.1 2014-10-14 Rev. 2.1 - Update SOA diagram

2.2 2014-11-10 Rev. 2.2 - Add footnote for Rg and Ciss

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PublishedbyInfineonTechnologiesAG81726München,Germany©2014InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

mosfet - transfer multisort elektronik€¦ · 2 optimostm5 power-transistor, 80 v bsc030n08ns5...

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