mosfet - farnell element141 bsc026n04ls final data sheet rev. 2.1, 2016-06-09 1) superso8 8d 7d 6d...

1

BSC026N04LS

Rev.�2.1,��2016-06-09Final Data Sheet

12

34

567

8

43 2

1

5 67 8

SuperSO8

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

MOSFETOptiMOSTM�Power-MOSFET,�40�V

Features•�Optimized�for�high�performance�SMPS,�e.g.�sync.�rec.•�Very�low�on-resistance�RDS(on)�@�VGS=4.5�V•�100%�avalanche�tested•�Superior�thermal�resistance•�N-channel•�Qualified�according�to�JEDEC1)��for�target�applications•�Pb-free�lead��plating;�RoHS�compliant•�Halogen-free�according�to�IEC61249-2-21

Table�1��Key�Performance�ParametersParameter Value UnitVDS 40 V

RDS(on),max 2.6 mΩ

ID 100 A

QOSS 28 nC

QG(0V..10V) 32 nC

Type�/�Ordering�Code Package Marking Related�LinksBSC026N04LS PG-TDSON-8 026N04LS -

1) J-STD20 and JESD22

2

OptiMOSTM�Power-MOSFET,�40�VBSC026N04LS


Table�of�ContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1��Maximum�ratingsat�TA=25�°C,�unless�otherwise�specified

Table�2��Maximum�ratingsValues

Min. Typ. Max.Parameter Symbol Unit Note�/�Test�Condition

Continuous drain current ID

-----

-----

100751006423

A

VGS=10�V,�TC=25�°CVGS=10�V,�TC=100�°CVGS=4.5�V,�TC=25�°CVGS=4.5�V,�TC=100�°CVGS=10�V,�TA=25�°C,�RthJA=50�K/W1)

Pulsed drain current2) ID,pulse - - 400 A TC=25�°C

Avalanche energy, single pulse3) EAS - - 50 mJ ID=50�A,�RGS=25�Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot ----

632.5 W

TC=25�°CTA=25�°C,�RthJA=50�K/W1)

Operating and storage temperature Tj,�Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

2��Thermal�characteristics

Table�3��Thermal�characteristicsValues


Thermal resistance, junction - case,bottom RthJC - 1.2 2 K/W -

Thermal resistance, junction - case,top RthJC - - 20 K/W -

Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information

4



3��Electrical�characteristics

Table�4��Static�characteristicsValues


Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0�V,�ID=1�mA

Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,�ID=250�µA

Zero gate voltage drain current IDSS --0.110

1100 µA

VDS=40�V,�VGS=0�V,�Tj=25�°CVDS=40�V,�VGS=0�V,�Tj=125�°C

Gate-source leakage current IGSS - 10 100 nA VGS=20�V,�VDS=0�V

Drain-source on-state resistance RDS(on) --2.12.6

2.63.6 mΩ

VGS=10�V,�ID=50�AVGS=4.5�V,�ID=50�A

Gate resistance1) RG - 0.9 1.8 Ω -

Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,�ID=50�A

Table�5��Dynamic�characteristicsValues


Input capacitance1) Ciss - 2300 3220 pF VGS=0�V,�VDS=20�V,�f=1�MHz

Output capacitance1) Coss - 640 900 pF VGS=0�V,�VDS=20�V,�f=1�MHz

Reverse transfer capacitance1) Crss - 52 104 pF VGS=0�V,�VDS=20�V,�f=1�MHz

Turn-on delay time td(on) - 5 - ns VDD=20�V,�VGS=10�V,�ID=50�A,RG,ext=1.6�Ω

Rise time tr - 4 - ns VDD=20�V,�VGS=10�V,�ID=50�A,RG,ext=1.6�Ω

Turn-off delay time td(off) - 37 - ns VDD=20�V,�VGS=10�V,�ID=50�A,RG,ext=1.6�Ω

Fall time tf - 4 - ns VDD=20�V,�VGS=10�V,�ID=50�A,RG,ext=1.6�Ω

Table�6��Gate�charge�characteristics2)�Values


Gate to source charge Qgs - 6.0 - nC VDD=20�V,�ID=50�A,�VGS=0�to�10�V

Gate charge at threshold Qg(th) - 3.6 - nC VDD=20�V,�ID=50�A,�VGS=0�to�10�V

Gate to drain charge1) Qgd - 5.2 7.3 nC VDD=20�V,�ID=50�A,�VGS=0�to�10�V

Switching charge Qsw - 7.5 - nC VDD=20�V,�ID=50�A,�VGS=0�to�10�V

Gate charge total1) Qg - 32 45 nC VDD=20�V,�ID=50�A,�VGS=0�to�10�V

Gate plateau voltage Vplateau - 2.6 - V VDD=20�V,�ID=50�A,�VGS=0�to�10�V

Gate charge total1) Qg - 16 22 nC VDD=20�V,�ID=50�A,�VGS=0�to�4.5�V

Gate charge total, sync. FET Qg(sync) - 13 - nC VDS=0.1�V,�VGS=0�to�4.5�V

Output charge1) Qoss - 28 39 nC VDD=20�V,�VGS=0�V

1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition

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Table�7��Reverse�diodeValues


Diode continuous forward current IS - - 63 A TC=25�°C

Diode pulse current IS,pulse - - 400 A TC=25�°C

Diode forward voltage VSD - 0.86 1 V VGS=0�V,�IF=50�A,�Tj=25�°C

Reverse recovery time1) trr - 24 48 ns VR=20�V,�IF=50�A,�diF/dt=400�A/µs

Reverse recovery charge Qrr - 57 - nC VR=20�V,�IF=50�A,�diF/dt=400�A/µs

1) Defined by design. Not subject to production test

6



4��Electrical�characteristics�diagrams

Diagram�1:�Power�dissipation

TC�[°C]

Ptot�[W

]

0 40 80 120 1600

10

20

30

40

50

60

70

Ptot=f(TC)

Diagram�2:�Drain�current

TC�[°C]

ID�[A

]

0 40 80 120 1600

20

40

60

80

100

120

ID=f(TC);�VGS≥10�V

Diagram�3:�Safe�operating�area

VDS�[V]

ID�[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);�TC=25�°C;�D=0;�parameter:�tp

Diagram�4:�Max.�transient�thermal�impedance

tp�[s]

ZthJ

C�[K

/W]

10-6 10-5 10-4 10-3 10-2 10-1 10010-3

10-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);�parameter:�D=tp/T

7



Diagram�5:�Typ.�output�characteristics

VDS�[V]

ID�[A

]

0 1 20

50

100

150

200

250

300

350

400

10 V

5 V

4.5 V

4 V

3.5 V

3.2 V

3 V

2.8 V

ID=f(VDS);�Tj=25�°C;�parameter:�VGS

Diagram�6:�Typ.�drain-source�on�resistance

ID�[A]

RDS(on

) ��[m

Ω]

0 50 100 150 200 250 300 350 4000

1

2

3

4

5

6

2.8 V

3 V3.2 V

3.5 V

4 V

4.5 V

5 V

10 V

RDS(on)=f(ID);�Tj=25�°C;�parameter:�VGS

Diagram�7:�Typ.�transfer�characteristics

VGS�[V]

ID�[A

]

0 1 2 3 4 50

80

160

240

320

400

150 °C 25 °C

ID=f(VGS);�|VDS|>2|ID|RDS(on)max;�parameter:�Tj

Diagram�8:�Typ.�forward�transconductance

ID�[A]

gfs �[S]

0 20 40 60 80 1000

50

100

150

200

250

gfs=f(ID);�Tj=25�°C

8



Diagram�9:�Drain-source�on-state�resistance

Tj�[°C]

RDS(on

) �[m

Ω]

-60 -20 20 60 100 140 1800

1

2

3

4

5

max

typ

RDS(on)=f(Tj);�ID=50�A;�VGS=10�V

Diagram�10:�Typ.�gate�threshold�voltage

Tj�[°C]

VGS(th) �[V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

250 µA

VGS(th)=f(Tj);�VGS=VDS;�ID=250�µA

Diagram�11:�Typ.�capacitances

VDS�[V]

C�[p

F]

0 10 20 30 40101

102

103

104

Ciss

Coss

Crss

C=f(VDS);�VGS=0�V;�f=1�MHz

Diagram�12:�Forward�characteristics�of�reverse�diode

VSD�[V]

IF �[A]

0.0 0.5 1.0 1.5100

101

102

103

25 °C150 °C25 ºC, max150 ºC, max

IF=f(VSD);�parameter:�Tj

9



Diagram�13:�Avalanche�characteristics

tAV�[µs]

IAV �[A]

100 101 102 103100

101

102

25 °C

100 °C

125 °C

IAS=f(tAV);�RGS=25�Ω;�parameter:�Tj(start)

Diagram�14:�Typ.�gate�charge

Qgate�[nC]

VGS �[V]

0 10 20 30 400

2

4

6

8

10

12

32 V

20 V

8 V

VGS=f(Qgate);�ID=50�A�pulsed;�parameter:�VDD

Diagram�15:�Drain-source�breakdown�voltage

Tj�[°C]

VBR(DSS

) �[V]

-60 -20 20 60 100 140 18030

32

34

36

38

40

42

44

46

VBR(DSS)=f(Tj);�ID=1�mA

Gate charge waveforms

10



5��Package�Outlines

Figure�1��Outline�PG-TDSON-8,�dimensions�in�mm

11



Dimension in mm

Figure�2��Outline�Tape�(TDSON-8)

12



Figure�3��Outline�Footprint�(TDSON-8)

13



Revision�HistoryBSC026N04LS

Revision:�2016-06-09,�Rev.�2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2016-06-09 Update footnotes and max values

Trademarks�of�Infineon�Technologies�AG

AURIX™,�C166™,�CanPAK™,�CIPOS™,�CoolGaN™,�CoolMOS™,�CoolSET™,�CoolSiC™,�CORECONTROL™,�CROSSAVE™,�DAVE™,�DI-POL™,�DrBlade™,EasyPIM™,�EconoBRIDGE™,�EconoDUAL™,�EconoPACK™,�EconoPIM™,�EiceDRIVER™,�eupec™,�FCOS™,�HITFET™,�HybridPACK™,�Infineon™,ISOFACE™,�IsoPACK™,�i-Wafer™,�MIPAQ™,�ModSTACK™,�my-d™,�NovalithIC™,�OmniTune™,�OPTIGA™,�OptiMOS™,�ORIGA™,�POWERCODE™,PRIMARION™,�PrimePACK™,�PrimeSTACK™,�PROFET™,�PRO-SIL™,�RASIC™,�REAL3™,�ReverSave™,�SatRIC™,�SIEGET™,�SIPMOS™,�SmartLEWIS™,SOLID�FLASH™,�SPOC™,�TEMPFET™,�thinQ�™,�TRENCHSTOP™,�TriCore™.

Trademarks�updated�August�2015

Other�Trademarks

All�referenced�product�or�service�names�and�trademarks�are�the�property�of�their�respective�owners.

We�Listen�to�Your�CommentsAny�information�within�this�document�that�you�feel�is�wrong,�unclear�or�missing�at�all?�Your�feedback�will�help�us�to�continuouslyimprove�the�quality�of�this�document.�Please�send�your�proposal�(including�a�reference�to�this�document)�to:[email protected]

Published�byInfineon�Technologies�AG81726�München,�Germany©�2016�Infineon�Technologies�AGAll�Rights�Reserved.

Legal�DisclaimerThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics.�Withrespect�to�any�examples�or�hints�given�herein,�any�typical�values�stated�herein�and/or�any�information�regarding�the�applicationof�the�device,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�and�liabilities�of�any�kind,�including�withoutlimitation,�warranties�of�non-infringement�of�intellectual�property�rights�of�any�third�party.

InformationFor�further�information�on�technology,�delivery�terms�and�conditions�and�prices�please�contact�your�nearest�InfineonTechnologies�Office�(www.infineon.com).

WarningsDue�to�technical�requirements,�components�may�contain�dangerous�substances.�For�information�on�the�types�in�question,please�contact�the�nearest�Infineon�Technologies�Office.The�Infineon�Technologies�component�described�in�this�Data�Sheet�may�be�used�in�life-support�devices�or�systems�and/orautomotive,�aviation�and�aerospace�applications�or�systems�only�with�the�express�written�approval�of�Infineon�Technologies,�if�afailure�of�such�components�can�reasonably�be�expected�to�cause�the�failure�of�that�life-support,�automotive,�aviation�andaerospace�device�or�system�or�to�affect�the�safety�or�effectiveness�of�that�device�or�system.�Life�support�devices�or�systems�areintended�to�be�implanted�in�the�human�body�or�to�support�and/or�maintain�and�sustain�and/or�protect�human�life.�If�they�fail,�it�isreasonable�to�assume�that�the�health�of�the�user�or�other�persons�may�be�endangered.

DescriptionTable of ContentsMaximum ratingsThermal characteristicsElectrical characteristicsStatic characteristicsDynamic characteristicsGate charge characteristicsReverse diodeElectrical characteristics diagramsElectrical characteristics diagramsElectrical characteristics diagramsElectrical characteristics diagramsPackage OutlinesRevision HistoryTrademarksDisclaimer

mosfet - farnell element141 bsc026n04ls final data sheet rev. 2.1, 2016-06-09 1) superso8 8d 7d 6d...

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