mosfet1 bsc0703ls final data sheet rev. 2.2, 2020-05-15 superso8 8 d 7 d 6d 5d s1 s2 s3 g 4 mosfet...

1

BSC0703LS

Rev.2.2,2020-05-15Final Data Sheet

12

34

56

78

43

21

56

78

SuperSO8

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

MOSFETOptiMOSTMPower-Transistor,60V

Features•Idealforhigh-frequencyswitching•100%avalanchetested•Superiorthermalresistance•N-channel,logiclevel•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21•Optimizedforchargers

ProductvalidationQualifiedaccordingtoJEDECStandard

Table1KeyPerformanceParametersParameter Value UnitVDS 60 V

RDS(on),max 6.5 mΩ

ID 64 A

QOSS 19 nC

QG(0V..4.5V) 10 nC

Type/OrderingCode Package Marking RelatedLinksBSC0703LS PG-TDSON-8 0703LS -

2

OptiMOSTMPower-Transistor,60VBSC0703LS


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID---

---

644115

AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W1)

Pulsed drain current2) ID,pulse - - 256 A TC=25°CAvalanche energy, single pulse3) EAS - - 21 mJ ID=40A,RGS=25ΩGate source voltage VGS -20 - 20 V -

Power dissipation Ptot--

--

462.5 W TC=25°C

TA=25°C,RthJA=50K/W1)

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - 1.6 2.7 K/W -

Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information

4



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mAGate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=20µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=60V,VGS=0V,Tj=25°C

VDS=60V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

5.37.2

6.59.2 mΩ VGS=10V,ID=32A

VGS=4.5V,ID=16A

Gate resistance1) RG - 1.2 1.8 Ω -

Transconductance gfs 32 63 - S |VDS|>2|ID|RDS(on)max,ID=32A

Table5Dynamiccharacteristics1)Values


Input capacitance Ciss - 1400 1800 pF VGS=0V,VDS=30V,f=1MHzOutput capacitance Coss - 300 390 pF VGS=0V,VDS=30V,f=1MHzReverse transfer capacitance Crss - 16 28 pF VGS=0V,VDS=30V,f=1MHz

Turn-on delay time td(on) - 5 - ns VDD=30V,VGS=10V,ID=32A,RG,ext=3Ω

Rise time tr - 3 - ns VDD=30V,VGS=10V,ID=32A,RG,ext=3Ω

Turn-off delay time td(off) - 14 - ns VDD=30V,VGS=10V,ID=32A,RG,ext=3Ω

Fall time tf - 3 - ns VDD=30V,VGS=10V,ID=32A,RG,ext=3Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 4.4 - nC VDD=30V,ID=32A,VGS=0to4.5VGate charge at threshold Qg(th) - 2.4 - nC VDD=30V,ID=32A,VGS=0to4.5VGate to drain charge1) Qgd - 3.3 5 nC VDD=30V,ID=32A,VGS=0to4.5VSwitching charge Qsw - 5.3 - nC VDD=30V,ID=32A,VGS=0to4.5VGate charge total1) Qg - 10 13 nC VDD=30V,ID=32A,VGS=0to4.5VGate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=32A,VGS=0to4.5VGate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to10VOutput charge1) Qoss - 19 25.5 nC VDD=30V,VGS=0V

1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition

5



Table7ReversediodeValues


Diode continuous forward current IS - - 39 A TC=25°CDiode pulse current IS,pulse - - 156 A TC=25°CDiode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=32A,Tj=25°CReverse recovery time1) trr - 24 48 ns VR=30V,IF=32,diF/dt=100A/µsReverse recovery charge1) Qrr - 14 28 nC VR=30V,IF=32,diF/dt=100A/µs

1) Defined by design. Not subject to production test

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 1750

10

20

30

40

50

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 1750

20

40

60

80

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

7



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0.0 0.5 1.0 1.5 2.00

50

100

150

200

250

5 V

4.5 V

4 V

3.5 V

3.2 V

3 V

2.8 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 50 100 150 200 2500

3

6

9

12

153 V

3.2 V

3.5 V

4 V

4.5 V

5 V

7 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

50

100

150

200

250

25 °C150 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

40

80

120

gfs=f(ID);Tj=25°C

8



Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

1

2

3

4

5

6

7

8

9

10

11

12

max

typ

RDS(on)=f(Tj);ID=32A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800

1

2

3

200 µA

20 µA

VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C150 °C25°C max150°C max

IF=f(VSD);parameter:Tj

9



Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 10310-1

100

101

102

25 °C100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 15 20 250

1

2

3

4

5

6

7

8

9

10

48 V

30 V

12 V

VGS=f(Qgate);ID=32Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18050

54

58

62

66

70

VBR(DSS)=f(Tj);ID=1mA

Diagram Gate charge waveforms

10



5PackageOutlines

1

10:1

Z8B00003332

REVISION

ISSUE DATE

EUROPEAN PROJECTION

07

06.06.2019

0 3mm

DOCUMENT NO.

1.27

MILLIMETERSDIMENSION

0.90 1.20

D1

A

b

D

D2

E

E1

E2

e

L

0.34 0.54

0.03 0.23

3.88 4.31

0.45 0.71

MIN. MAX. SCALE

2

M 0.45 0.69

0.15 0.35A1

3.90 4.40

4.80 5.35

5.70 6.10

5.90 6.42

Figure1OutlinePG-TDSON-8,dimensionsinmm

11



copper solder mask stencil apertures

all dimensions in mm

1.5

1.5

0.5

0.825

0.4

0.75

2.863

0.875

2.9

0.2

0.2

1.905

1.905

1.27

3x

1.27

3x

1.6

0.6

0.925

0.51.27

3x

2.863

0.8

4.455

3.325

1.905

1.27

3x

1.905

PG-TDSON-8: Recommended Boardpads & Apertures

Figure 2 Outline Boardpads (TDSON-8), dimensions in mm

12

OptiMOS TM Power-Transistor , 60 VBSC0703LS

Rev. 2.2, 2020-05-15Final Data Sheet

Dimension in mm

Figure 3 Outline Tape (TDSON-8)

13

OptiMOS TM Power-Transistor , 60 VBSC0703LS

Rev. 2.2, 2020-05-15Final Data Sheet

Revision HistoryBSC0703LS

Revision: 2020-05-15, Rev. 2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2016-10-06 Release of final version

2.1 2016-10-20 Update " Features "

2.2 2020-05-15 Update package drawings

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuouslyimprove the quality of this document. Please send your proposal (including a reference to this document) to:[email protected]

Published byInfineon Technologies AG81726 München, Germany© 2020 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of theproduct, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitationwarranties of non-infringement of intellectual property rights of any third party.In addition, any information given in this document is subject to customer’s compliance with its obligations stated in thisdocument and any applicable legal requirements, norms and standards concerning customer’s products and any use of theproduct of Infineon Technologies in customer’s applications.The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’stechnical departments to evaluate the suitability of the product for the intended application and the completeness of the productinformation given in this document with respect to such application.

InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if afailure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it isreasonable to assume that the health of the user or other persons may be endangered.

mosfet1 bsc0703ls final data sheet rev. 2.2, 2020-05-15 superso8 8 d 7 d 6d 5d s1 s2 s3 g 4 mosfet...

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