mpi - halbleiterlabor für physik und für extraterrestrische physik r. hartmann sdw 2005 taormina...

MPI - Halbleiterlabor für Physik und für extraterrestrische Physik

R. HartmannSDW 2005Taormina21.06.2005

A pnCCD detector system forhigh speed optical applications

Robert Hartmann 1 , Hubert Gorke 2 ,Norbert Meidinger 3 , Heike Soltau 1 and Lothar Strüder 3

1) PNSensor GmbH, Römerstraße 28, 80803 München, Germany 2) Forschungszentrum Jülich, Leo-Brandt-Straße, 52428 Jülich, Germany3) Max-Planck-Institut für extraterrestrische Physik, Giessenbachstraße, 85741 Garching, Germany

Semiconductor Detector Workshop 2005 Taormina / June 19 – 24, 2005



• Principles of pnCCD

• Optical properties

• Detector format and geometry

• Readout and data acquisition

• Measurements and Performance

• Summary and outlook

Overview



Fully depleted 3-phase CCD Back side illuminated Cooled to -40º C .. -80º C (typ.) Small detector capacitance ≈ 25 fF

→ low noise

Principles of the pnCCD One integrated FET per channel Channel-Parallel-CCD

→ fast readout p-implanted registers High radiation hardness









Overview



pnCCD for optical applications

back illuminated detector unstructured entrance window results in a homogeneous responsitivity

application of an ultra-thin rectifying implant leads to a high

QE in the blue and UV region

easy to apply an anti-reflective coating

entire detector volume of 450µm is radiation sensitive high quantum efficiency in the red and NIR region

fringing effects are negligible

small detector capacitance high signal to noise ratio

• highest electric field at readiation entrance side narrow PSF

back illuminated detector unstructured entrance window results in a homogeneous responsitivity

application of an ultra-thin rectifying implant leads to a high

QE in the blue and UV region

easy to apply an anti-reflective coating

entire detector volume of 450µm is radiation sensitive high quantum efficiency in the red and NIR region

fringing effects are negligible

small detector capacitance high signal to noise ratio

• highest electric field at readiation entrance side narrow PSF



Measured and modelled reflectivity of CCD entrance window

: Measured data

: Model of Si-SiOx-SiO2

: Model of pure Si-SiO2

Interface



Internal quantum efficiency



Measurement of optical response at room temperature

Reflectivity of Silicon resp. Si/SiO2 ≈ 30%

Use layer stack of SiO2/Si3N4 as ARC

Technology allows to taylor responsitivity over a wide wavelength range

Technological compatible ARC:

High QE in visible, maximum at 580nmOptimum QE in NIR regionBlue and UV optimized (50% @ 300nm)

Standard entrance window,consisting of a thin SiO2 layer

Optimized for CsI(Ti) scintillator readout (λ = 548nm)



150 mm Wafer of recent fabrication



Fringing effects due to multiple light reflection between detector front and back side









Overview



Schematic layout of 51 m CCD with double-side readout



51m pnCCD with a double-sided readout,mounted onto a ceramic substrate

image area = 13.0×13.5 mm2

chip area = 16.0×31.0 mm2 51 m pixel size

256×264 pixel plus 2×4 “light insensitive” columns readout transfer to both sides



Performance overview

- 55º C for all measurements aboveOperating temperature

2000, 3000, 4000fps : 2.3 e¯ (rms)Transfer binning (×2, ×3, ×4)

70 Mpixel/s , split on 8 readout nodesPixel rate

Normal mode → < 500fps : 1.8 e¯ (rms)

Fast mode → 1000fps : 2.3 e¯ (rms)Readout noise

70 dBDynamic output range

Normal mode: 15 μs/row, i.e. 500fps

Fast mode: 6.5 μs/row, i.e. 1000fps Readout time

100 %Fill factor

> 105 e¯ / pixelCharge handling capacity

≈ 1 · 10-5 → total charge loss < 0.15 %CTI

25 μs/image (split to both detector sides)Fast transfer time



Brief overview









CAMEX Amplification- and Readout-Chip

• Multi-correlated double-sampling filtering (MCDS)• Signal processing of all channels in parallel (132)• Serialized readout parallel to analogues signalprocessing• Selectable gains and operating modes• Electronic noise contribution less than 1 e-

• Readout-speed per node up to 10MHz (i.e. 6.6µs per line on two readout nodes)



Data acquisition and real-time correction 1000 frames / sec. 264 lines / frame 264 pixel / line 70 Mpixel / sec. !!! 140 MB/sec.

Split on 4 DAQ boards á 17.5 Mpixel / sec. 2×14 bit flash-ADC

Pipelined data processingin fast FPGA processor forreal-time data correctionand reduction

Output of 1st CCD line is available with a latency time < 40 s

constructing frame MIP and cluster analysis latency ~ 1.2 msec

Example for a SH detector:



Overview Camera Controller

cPCI-BusFib

er

Inte

rface

AD

C-M

od

ul 3

AD

C-M

od

ul 4

Seq

uen

cer

PS

-Con

trol

Front-End-Boards(incl. clock-drivers)

CAMEX

pnCCD-Chip

Power-Supplies

30 in total, free-to-ground,

PC controlable, incl. monitor

Linux PC

2 2 32

AD

C-M

od

ul 2

2

AD

C-M

od

ul 1

2

19’’ cratedouble height

80 MB/s300m



Sequenzer 1 … 4 ADC-Boards á 2 ADCsOptical InterfaceSpare for Voltage Controller

Data acquisition electronic system



Overview









Spectroscopic soft X-ray performance of pnCCD

Operating Temperature = -55° C Overall noise contribution : 2.3 e-

All events reconstructed FWHM for singles: 45eV



Low and uniform noise performance66×264 pixel, ⅛ of 51m CCD (“worst” section)• 1 of 4 output nodes on one readout side• image plus storage area• operating temperature = -55°C• “1000fps” - timing scheme

Mean noise = 2.3 electrons (rms)98.8% of all pixel exhibit less than 2.7 e- noise100% are below 3.1 e-



Repetively readout of n lines with signal

merely transfer with no readout lines w/o signal

readout of next n lines

and so on …

40×40 SH with 5×5 Pixel:

1kHz → 1.3kHzframe rate

Increase readout speed for dedicated applications

.

.

.

.



Conclusion

pnCCDs exhibit a high quantum efficiency from the optical to NIR region

device with 256×264 (13.0x13.5mm2) image size and a double side readout was successfully tested for a frame rate of 1000 fps

total readout noise of 2.3e- (RMS) was achieved in this mode at an operating temperature of -55ºC

binning in transfer direction allows 2kHz, 3kHz, ... frame rates with same noise figures due to very low leakage current

low and homogeneous noise performance over entire area (no bright or hot pixel, even at higher temperatures)

optical photon counting possible down to ≈ 8 γ/pixel



Back to the beginning

Long term stability of pnCCD detector aboard XMM-Newton (1999):

Total area = 36cm2 all 12 Sub-CCDs are still operating same operating parameters (T = -90°C) quantum efficiency unchanged noise performance unchanged slight radiation damage as expected: CTI

FWHM after 5 years in orbit:

Al-K (1.5 keV): 110 eV → 111 eVMn-Kα (5.9 keV): 155 eV → 160 eV

← 6 cm

→

mpi - halbleiterlabor für physik und für extraterrestrische physik r. hartmann sdw 2005 taormina...

Documents

hartmann sdw

readout folie

nm folie

sides folie

interface folie

geometry readout

outlook overview folie

pnccd detector system