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January 2015 DocID027376 Rev 1 1/16
STF42N60M2-EP,STFW42N60M2-EP
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in TO-220FP and TO-3PF packages
Datasheet − production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications• Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
DescriptionThese devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.
AM01476v1
TO-220FP TO-3PF
12
3
Order codesVDS @ TJmax
RDS(on) max
ID
STF42N60M2-EP650 V 0.087 Ω 34 A
STFW42N60M2-EP
Table 1. Device summary
Order codes Marking Package Packaging
STF42N60M2-EP42N60M2EP
TO-220FPTube
STFW42N60M2-EP TO-3PF
www.st.com
Contents STF42N60M2-EP, STFW42N60M2-EP
2/16 DocID027376 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 TO-220FP, STF42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-3PF, STFW42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID027376 Rev 1 3/16
STF42N60M2-EP, STFW42N60M2-EP Electrical ratings
16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol ParameterValue
UnitTO-220FP TO-3PF
VGS Gate-source voltage ± 25 V
ID(1)
1. Limited by maximum junction temperature
Drain current (continuous) at TC = 25 °C 34 A
ID (1) Drain current (continuous) at TC = 100 °C 22 A
IDM (1),(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 136 A
PTOT Total dissipation at TC = 25 °C 40 63 W
dv/dt (3)
3. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt(4)
4. VDS ≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C)
2500 3500 V
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol ParameterValue
UnitTO-220FP TO-3PF
Rthj-case Thermal resistance junction-case max 3.13 2.00 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IARAvalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
6 A
EASSingle pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
800 mJ
Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP
4/16 DocID027376 Rev 1
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
VGS = 0 V, ID = 1 mA 600 V
IDSSZero gate voltage
drain current
VGS = 0 V, VDS = 600 V 1 µA
VGS = 0 V, VDS = 600 V, TC = 125 °C
100 µA
IGSSGate-body leakagecurrent
VDS = 0 V, VGS = ± 25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)Static drain-source on-resistance
VGS = 10 V, ID = 17 A 0.076 0.087 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VGS = 0, VDS = 100 V, f = 1 MHz
- 2370 - pF
Coss Output capacitance - 112 - pF
CrssReverse transfer capacitance
- 2.5 - pF
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Equivalent output capacitance
VGS = 0, VDS = 0 to 480 V - 454 - pF
RGIntrinsic gate resistance
f = 1 MHz, ID = 0 - 4.5 - Ω
Qg Total gate charge VDD = 480 V, ID = 34 A,VGS = 10 V
(see Figure 18)
- 55 - nC
Qgs Gate-source charge - 8.5 - nC
Qgd Gate-drain charge - 25 - nC
Table 7. Switching Energy
Symbol Parameter Test conditions Min. Typ. Max. Unit
R(off)Turn-off energy (from 90% VGS to 0% ID)
VDD = 400 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V
- 13 - µJ
VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V
- 14.5 - µJ
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STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics
16
Table 8. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 17 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17 and Figure 22)
- 16.5 - ns
tr Rise time - 9.5 - ns
td(off) Turn-off-delay time - 96.5 - ns
tf Fall time - 8 - ns
Table 9. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 34 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 136 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 34 A, VGS = 0 - 1.6 V
trr Reverse recovery timeISD = 34 A, di/dt = 100 A/µsVDD = 60 V (see Figure 22)
- 438 ns
Qrr Reverse recovery charge - 9 µC
IRRM Reverse recovery current - 41.5 A
trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µsVDD = 60 V, Tj = 150 °C(see Figure 22)
- 538 ns
Qrr Reverse recovery charge - 12 µC
IRRM Reverse recovery current - 44.5 A
Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP
6/16 DocID027376 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF
Figure 6. Output characteristics Figure 7. Transfer characteristics
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STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics
16
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Turn-off switching loss vs drain current
Figure 11. Capacitance variations
Figure 12. Output capacitance stored energy Figure 13. Normalized gate threshold voltage vs temperature
Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP
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Figure 14. Normalized on-resistance vs temperature
Figure 15. Normalized V(BR)DSS vs temperature
Figure 16. Source-drain diode forward vs temperature
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STF42N60M2-EP, STFW42N60M2-EP Test circuits
16
3 Test circuits
Figure 17. Switching times test circuit for resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load switching and diode recovery times
Figure 20. Unclamped inductive load test circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STF42N60M2-EP, STFW42N60M2-EP
10/16 DocID027376 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DocID027376 Rev 1 11/16
STF42N60M2-EP, STFW42N60M2-EP Package mechanical data
16
4.1 TO-220FP, STF42N60M2-EP
Figure 23. TO-220FP drawing
7012510_Rev_K_B
Package mechanical data STF42N60M2-EP, STFW42N60M2-EP
12/16 DocID027376 Rev 1
Table 10. TO-220FP mechanical data
Dim.mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
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STF42N60M2-EP, STFW42N60M2-EP Package mechanical data
16
4.2 TO-3PF, STFW42N60M2-EP
Figure 24. TO-3PF drawing
7627132_D
Package mechanical data STF42N60M2-EP, STFW42N60M2-EP
14/16 DocID027376 Rev 1
Table 11. TO-3PF mechanical data
Dim.mm
Min. Typ. Max.
A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80
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STF42N60M2-EP, STFW42N60M2-EP Revision history
16
5 Revision history
Table 12. Document revision history
Date Revision Changes
21-Jan-2015 1 First release.
STF42N60M2-EP, STFW42N60M2-EP
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