n-channel superfet mosfet - shaoguang n-channel mosfet ©2009 fairchild semiconductor corporation...
TRANSCRIPT
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
www.fairchildsemi.com1
March 2013
FCH47N60_F133N-Channel SuperFET® MOSFET600 V, 47 A, 70 mΩ
Features• 650V @TJ = 150°C
• Typ. RDS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg = 210 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application• Solar Inverter
• AC-DC Power Supply
DescriptionSuperFET® MOSFET is Fairchild Semiconductor®’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This technology is tai-lored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Conse-quently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Thermal Characteristics
Symbol Parameter FCH47N60_F133 Unit
VDSS Drain to Source Voltage 600 V
ID Drain Current-Continuous (TC = 25oC) 47
A-Continuous (TC = 100oC) 29.7
IDM Drain Current - Pulsed (Note 1) 141 AVGSS Gate to Source Voltage ±30 VEAS Single Pulsed Avalanche Energy (Note 2) 1800 mJIAR Avalanche Current (Note 1) 47 AEAR Repetitive Avalanche Energy (Note 1) 41.7 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation(TC = 25oC) 417 W- Derate above 25oC 3.33 W/oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 oC
Symbol Parameter Typ. Max. Unit
RθJC Thermal Resistance, Junction to Case, Max - 0.3 oC/WRθJA Thermal Resistance, Case-to-Sink 0.24 - oC/WRθJA Thermal Resistance, Junction to Ambient, Max - 41.7 oC/W
*Drain current limited by maximum junction temperature
GSD
TO-247
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
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Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FCH47N60 FCH47N60_F133 TO-247 - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown VoltageVGS = 0 V, ID = 250 μA, TC = 25oC 600 - - VVGS = 0 V, ID = 250 μA, TC = 150oC - 650 - V
ΔBVDSS ΔTJ
Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC - 0.6 - V/oC
BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 47 A - 700 - V
IDSS Zero Gate Voltage Drain CurrentVDS = 600 V, VGS = 0 V - - 1
μAVDS = 480 V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 VRDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 23.5 A - 0.058 0.07 ΩgFS Forward Transconductance VDS = 40 V, ID = 23.5 A (Note 4) - 40 - S
Ciss Input CapacitanceVDS = 25 V, VGS = 0 Vf = 1.0 MHz
- 5900 8000 pFCoss Output Capacitance - 3200 4200 pFCrss Reverse Transfer Capacitance - 250 - pFCoss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 160 - pFCosseff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 420 - pF
td(on) Turn-On Delay TimeVDD = 300 V, ID = 47 ARG = 25 Ω
(Note 4, 5)
- 185 430 nstr Turn-On Rise Time - 210 450 nstd(off) Turn-Off Delay Time - 520 1100 nstf Turn-Off Fall Time - 75 160 nsQg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 47 A,
VGS = 10 V (Note 4, 5)
- 210 270 nCQgs Gate to Source Gate Charge - 38 - nCQgd Gate to Drain “Miller” Charge - 110 - nC
IS Maximum Continuous Drain to Source Diode Forward Current - - 47 AISM Maximum Pulsed Drain to Source Diode Forward Current - - 141 AVSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 47 A - - 1.4 Vtrr Reverse Recovery Time VGS = 0 V, ISD = 47 A
dIF/dt = 100 A/μs (Note 4)- 590 - ns
Qrr Reverse Recovery Charge - 25 - μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width ≤ 300 μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100 101
100
101
102
VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V
※ Notes : 1. 250μ s Pulse Test 2. TC = 25
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]2 4 6 8 10
100
101
102
※ Note 1. VDS = 40V 2. 250μ s Pulse Test
-55
150
25
I D ,
Dra
in C
urre
nt [
A]
VGS , Gate-Source Voltage [V]
0 20 40 60 80 100 120 140 160 180 2000.00
0.05
0.10
0.15
0.20
VGS = 20V
VGS = 10V
※ Note : TJ = 25
RD
S(O
N) [
Ω],D
rain
-Sou
rce
On-
Res
ista
nce
ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
25150
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
I DR ,
Rev
erse
Dra
in C
urre
nt [
A]
VSD , Source-Drain Voltage [V]
10-1 100 1010
5000
10000
15000
20000
25000
30000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd
Crss = Cgd
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
Crss
Coss
Ciss
Cap
acita
nce
[pF]
VDS, Drain-Source Voltage [V]0 50 100 150 200 250
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
※ Note : ID = 47A
V GS,
Gat
e-S
ourc
e V
olta
ge [V
]
QG, Total Gate Charge [nC]
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variationvs. Temperature vs. Temperature
Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature
Figure 10. Transient Thermal Response Curve
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250 μ A
BVD
SS, (
Nor
mal
ized
)D
rain
-Sou
rce
Brea
kdow
n Vo
ltage
TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes : 1. VGS = 10 V 2. ID = 47 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
100 101 102 10310-2
10-1
100
101
102
Operation in This Area is Limited by R DS(on)
DC
10 ms
1 ms
100 us
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]25 50 75 100 125 150
0
10
20
30
40
50
I D
, Dra
in C
urre
nt [A
]
TC, Case Temperature [ ]
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1※ N o te s : 1 . Z θ JC( t) = 0 .3 /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
s in g le p u lse
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC(t)
, The
rmal
Res
pons
e
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
t1
PDM
t2
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
www.fairchildsemi.com5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
www.fairchildsemi.com6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
www.fairchildsemi.com7
Mechanical Dimensions
Dimensions in Millimeters
TO-247
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©2009 Fairchild Semiconductor CorporationFCH47N60_F133 Rev. C0
www.fairchildsemi.com8
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