october 2015 presented by ian baker infrared detectors for... · october 2015 presented by ian...

Selex ES Optronics Southampton: Infrared Detectors for Astronomy

Featuring Saphira e-APDs

October 2015

Presented by Ian Baker

2

Selex ES Optronics Southampton UK

Company Overview •  Specialists in the design, development and manufacture of infrared detectors

•  180 employees; 70 educated to degree level or above

•  9500m2 facility of which 3000m2 clean rooms

•  50 year investment and heritage in R&D and manufacture

•  Core skills

MOVPE HgCdTe Growth on GaAs

Semiconductor technology

Electronics and ROIC design

Camera design

Packaging and Cryogenics

EO and Environmental Testing LRQA Quality Assurance: ISO9001:2008 | AS9100 Rev B | ISO14001:2004

© Copyright Selex ES. All rights reserved

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Selex ES – Infrared Detectors for Space Applications

BIRD bi-spectral

Meteosat

NASA Mars Rovers

Space heritance

1972   Selective chopper radiometer - Nimbus 5 1974   Horizon sensor – X4 Earth Satellite 1975   IR spin scan radiometer – Synchronous meteorological satellite for Hughes Corporation 1977   Meteosat 1st generation – for Airbus 1987 ESO - 64x64 and 128x128 HgCdTe CCDs for first infrared astronomical images 1991   ATSR (Along track scanning radiometer) – UARS for RAL 1998   PMIRR (Pressure modulated infra red radiometer) – Mars Mariner for Oxford University 2000   STRV2 – 2 colour PV array for DERA/BMDO 2001   BIRD (bispectral integrated detector cooler assembly) – DLR 2002   MIPAS (Michelson interferometer for passive atmospheric sounding) – Envisat for ESA 2003   Raytheon Mini TES on NASA’s Mars Spirit and Opportunity Rovers 2004   Meteosat 2nd generation (MSG) – for Airbus

Recent programs

Meteosat 3rd Generation (ESA) - VLWIR (up to ~14 µm) Earth observation detector pre-developments – IASI and METimage (2.2 – 16 µm) DIAL detector (ESA) - Large area, SWIR eAPD with TEC & TIA SWIR eADP space qualification (NSTP –UKSA) Buttable packaging (NSTP – UKSA) - Development for NIR LFA in cooperation with e2v OTES (Arizona State University) - OSIRIS Rex thermal emission spectrometer

Current major programs

IASI NG (Astrium/CNES/Eumetsat) •  Weather prediction, land and sea surface temperature, and atmospheric science •  4 bands covering 3 – 16um wavelength range (PV and PC devices) NIR LFA phase 2 and ASIC interface electronics (ESA) SWIR LFA (ESA) VLWIR low dark current (ESA) GOSAT (DRS) - VLWIR large area MCT photoconductor


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Technical topics

1 Progressively larger arrays and smaller pixel sizes with no reduction in sensitivity 2 Higher operating temperature for low power, thermal imaging cameras

3 Dual-waveband (MWIR/LWIR) detectors

4 Multifunctional (active/passive) and highly flexible focal planes arrays 5 Very sensitive arrays based on e-APDs for science and active imaging

Selex ES Research and Development

Based on: 1 Advanced silicon multiplexers or ROICs 2 MOVPE HgCdTe on GaAs 3 Mesa - indium bump device technology

MW MERLIN 1024 x 768 pixels, 16 µm pitch NETD 16 mK


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MOVPE Avalanche Photodiode Fabrica>on process:

Cut-off wavelength at 90K of 3” Ø MCT wafer

4 9 14 19 24 29 34 39 44 49 54 59 64 69 744

9

14

19

24

29

34

39

44

49

54

59

64

69

74

x (mm)

y (m

m)

5.3-5.5

5.1-5.3

4.9-5.1

4.7-4.9

4.5-4.7

4.3-4.5

4.1-4.3

λ 90 K (µm)

4 9 14 19 24 29 34 39 44 49 54 59 64 69 744

9

14

19

24

29

34

39

44

49

54

59

64

69

74

x (mm)

y (m

m)

5.3-5.5

5.1-5.3

4.9-5.1

4.7-4.9

4.5-4.7

4.3-4.5

4.1-4.3

λ 90 K (µm)

Cut-off wavelength at 90K of 3” Ø MCT wafer

4 9 14 19 24 29 34 39 44 49 54 59 64 69 744

9

14

19

24

29

34

39

44

49

54

59

64

69

74

x (mm)

y (m

m)

5.3-5.5

5.1-5.3

4.9-5.1

4.7-4.9

4.5-4.7

4.3-4.5

4.1-4.3

λ 90 K (µm)

4 9 14 19 24 29 34 39 44 49 54 59 64 69 744

9

14

19

24

29

34

39

44

49

54

59

64

69

74

x (mm)

y (m

m)

5.3-5.5

5.1-5.3

4.9-5.1

4.7-4.9

4.5-4.7

4.3-4.5

4.1-4.3

λ 90 K (µm)

1 2 3 4

20 19 18 17

3231

3029

2827

2625

2423

22

21

1615

1413

1211

109

87

6

5

SAPHIRA

1 2 3 4

20 19 18 17

3231

3029

2827

2625

2423

22

21

1615

1413

1211

109

87

6

5

SAPHIRA

1E+13

1E+14

1E+15

1E+16

1E+17

1E+18

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16Depth (microns)

CO

NC

ENTR

ATI

ON

(a

tom

s.cm

-3)

0.3

0.4

0.5

0.6

0.7

0.8

CA

DM

IUM

CO

MPO

SITI

ON

"x"

Iodine Donor ConcI blocks ArsenicAcceptor Conc As blocksComposition X blocks

Mk2 SW design for APD

Device design and modelling

MOVPE layer growth, mapping and SIMs

Genesis device fabrica>on

Bump bonding and test

Silicon wafer scale indium bumping and tes>ng

Saphira ROICs

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1E+14

1E+15

1E+16

1E+17

1E+18

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Com

posi

tion

(x)

Con

cent

ratio

n (c

m-3

)

Depth (µm)

ARSENICIODINEAs (est)iodine (est)As blocksI blocksIodine HiResAs HiResBromineAgxx (est)x blocksx (Te -est)

5VG281 SW APD Mk2OPTIMISED SIMS SIMULATION DATA

Type Thick x xgrade As Asgrade I Igrade DIFFERENCE SCALING FACTOR from DesignCdTe cap 0.75 0.83 0.03 1.0E+12 0.10 1.0E+12 0.01 Type Thick x xgrade As Asgrade I Igrade

N+ 0.86 0.48 0.06 1.0E+12 0.06 8.9E+16 0.01 N+ 0.98 1.00 0.86 1.00 0.60 1.48 1.00 N+ 0.62 0.47 0.10 1.0E+12 0.06 1.4E+16 0.01 N+ 0.99 1.01 1.43 1.00 0.60 1.39 1.00

undoped 3.50 0.35 0.15 1.0E+12 0.06 1.0E+12 0.01 undoped 1.02 0.99 1.50 1.00 0.40 1.00 1.00 Pgr 0.09 0.38 0.15 1.0E+12 0.06 1.0E+12 0.01 Pgr 0.99 0.99 2.14 1.00 0.60 1.00 1.00 Pgr 0.09 0.41 0.11 1.0E+12 0.06 1.0E+12 0.01 Pgr 0.99 0.99 1.57 1.00 0.60 1.00 1.00 Pgr 0.67 0.45 0.11 1.0E+12 0.06 1.0E+12 0.01 Pgr 0.94 1.01 1.57 1.00 0.60 1.00 1.00 Pgr 2.53 0.45 0.10 2.9E+16 0.06 1.0E+12 0.01 Pgr 0.94 1.01 1.43 2.75 0.60 1.00 1.00 Pgr 0.27 0.47 0.10 4.5E+16 0.06 1.0E+12 0.01 Pgr 0.99 0.96 1.43 1.13 0.60 1.00 1.00 Pgr 0.27 0.50 0.20 7.4E+16 0.06 1.0E+12 0.01 Pgr 0.98 0.99 2.86 1.70 0.60 1.00 1.00 Pgr 0.27 0.52 0.25 1.0E+17 0.06 1.0E+12 0.01 Pgr 0.99 0.99 3.57 1.66 0.60 1.00 1.00

Backplane 5.12 0.69 0.35 1.5E+17 0.10 1.0E+12 0.01 Backplane 0.98 1.04 5.00 1.53 1.00 1.00 1.00 window 1.24 0.71 0.10 1.0E+12 0.10 1.0E+12 0.01 window 0.98 1.07 1.43 1.00 1.00 1.00 1.00

Fully tested die


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Di-‐iso Propyl Telluride

Di Methyl Cadmium

Tris-‐Di-‐Methyl Amino Arsine

Iso-‐Butyl Iodide

Hg vapour

N

P

GaAs substrate

Metal Organic Vapour Phase Epitaxy Alternate HgTe and CdTe growth for optimum growth conditions and easy control of wavelength P and N doping on CdTe cycle only so independent of wavelength and no ex-situ anneal needed Produces all Selex products: MWIR, LWIR, dual waveband, HOT and eAPDs

MOVPE growth of HgCdTe

Why GaAs? High quality, epi-ready single crystals Multiple suppliers of 75 to 150 mm diameter wafers Low cost ~ $2.5 /cm2 (vs ~ $200 /cm2 for CdZnTe) Much greater mechanical strength than CdZnTe Free of trace element contamination Much easier surface to nucleate on than silicon Easily removed by selective etch after hybridization to remove thermal stresses and internal reflections Cadmium utilisation reduced by >100x

CdTe/HgTe

CdTe

Seed layer

GaAs

Device growth

Overcoming 14% mismatch Buffer of CdTe and thick CdTe/HgTe reduces dislocations to weak features not active in devices


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Selex has produced over 100 ROICs over 34 years

All scientific ROICs have: •  Simple single clock and serial register (SPI) operation •  Power management circuitry for low power < 30 mW •  Option to use electron avalanche photodiodes, eAPDs •  Special circuitry to minimise persistence •  Design features to minimise glow •  Powerful, low noise output drivers •  Non-destructive readout Some ROICs have •  Flexible sub-windows with independent reset and read •  Programmable number of outputs •  3-side buttable architecture with only 6 pixel gap •  Radiation hardened design •  Low glow features

Silicon multiplexer (ROIC) design capability

World-class design facilities

Latest CADENCE IC Design software supplemented by MathCAD, Matlab, Scilab, Perl, etc for analysis and LabView for device characterisation. Design team with over 80 years experience.

ESA SWIR 2k 2056x2048 / 17 µm 37 x 39 mm die 16 bank architecture

FALCON 720P 1920x1080 / 12 µm 3-side buttable

SAPHIRA 320x256 / 24 µm Fast framing eAPD Multiple sub-window 4,8,16 or 32 outputs


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HgCdTe e-APDs and impact on astronomical instruments

Sensitivity improves almost in proportion to avalanche gain Benefits of HgCdTe avalanche gain

•  Voltage controlled gain at the point of absorption

•  Little additional noise

•  Negligible power consumption

•  Up to 100 MHz bandwidth

•  Fundamentally highly stable for long-term operation

•  No persistence

•  Negligible gain non-uniformity

•  Shrinkable to the micron scale

•  Requires no silicon real estate

•  Similar manufacturing process to standard arrays

Downsides

•  Need to be careful of dark current


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Best LPE arrays: x30 at 40K with 2% defects Current MOVPE: x60 at 85K with few defects

SAPHIRA with HgCdTe eAPDs a new infrared detector for scientific applications

•  Fully flexible ‘Region of Interest’ architecture •  32 outputs and optimum pixel mapping for

high frame rate in multiple windows •  Non-destructive readout •  Very low noise •  Designed for HgCdTe APDs

Independent reset areas

Independent scan areas

Full Custom ROIC - SAPHIRA

Breakthrough in MOVPE avalanche photodiode arrays (eAPDs)

Target market: Wavefront sensing Astronomy Spectroscopy Interferometry Photon counting

•  Downselected for the ESO GRAVITY Project (wavefront sensors and fringe trackers)

•  Demonstrated on Mount Palomar 60” and 3m NASA IRTF telescopes


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•  GRAVITY will combine the signals of four 8.2 m telescopes to achieve the sensitivity and resolution of a 200 m telescope.

•  Narrow angle astrometry with an accuracy of < 10 micro-

arcseconds.

•  Interferometric imaging for objects as faint as K = 11. •  Pioneering research at the event horizon of black holes,

resolution of exo-planets and the origin of protostellar jets.

European Southern Observatories, ESO Very Large Telescope, VLT – cluster of four 8.2m unit telescopes on Mt Paranal, Chile

SAPHIRA deployment in the VLT Interferometer and GRAVITY instrument

Selex have delivered 5 science grade arrays for installation in the wavefront sensors and fringe tracker on the GRAVITY instrument.


11 11

Shifted-and-added based on centroid analysis - giving 0.3 arcseconds, (similar to seeing conditions on night).

10% frame selection based on peak flux giving 0.13 arcseconds, diffraction limited performance.

Images from 3-m NASA IRTF telescope on Maunakea

These 2 seconds exposures were performed with an avalanche gain of x30 and frame rate of 1000 frames per second. By using lucky imaging, diffraction limited performance was achieved on IRTF. The trefoil pattern is due to the telescope supports.

Images from Mount Palomar 60 inch

Preliminary data in 2 arcsecond seeing conditions with 1% lucky imaging showing near-diffraction limited performance without an AO system

University of Hawaii on-sky evaluation of Saphira

Saphira demonstrated on-sky


Courtesy of University of Hawaii and thanks to Don Hall and Dani Atkinson.

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GaAs removed and replaced by anti-reflection coating

P-type absorber

CdTe seed layer

CdTe/HgTe buffer

P-n junction structure Multiplication region N+ Contact

MOVPE e-APD device structure


13 © Copyright Selex ES. All rights reserved

Multiplication region has narrow bandgap

3.5 µm for higher gain per volt


1.E-‐081.E-‐071.E-‐061.E-‐051.E-‐041.E-‐031.E-‐021.E-‐011.E+001.E+011.E+021.E+03

8 10 12 14 16 18

Dark curren

t (e/pix/s)

1000/Temp (K)

3.5

3.7

3.9

4.1

4.3

1

10

100

0 5 10 15

Avalan

che gain

Bias volts

Effect of wavelength of multiplication region on avalanche gain

3.5

3.7

3.9

4.1

4.3

1.E-‐02

1.E-‐01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

1.E+06

70 80 90 100 110 120 130 140 150

Electron

s/pixel/s at unity gain

Temperature

Dark current for 3.5 um multiplication region

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Buffer has 1.35 um cutoff and controls the lower end of the

spectral response


Current MOVPE wavelength rangeExtended spectral response


15 © Copyright Selex ES. All rights reserved

MOVPE e-APD test data for 2775-35 as supplied to GRAVITY Signal at 1.55 µm

200ms integration time, 9V bias (avalanche gain x14), 83K

Without avalanche gain the signal is 6 mV. Applying avalanche gain has no effect on non-uniformity - it just amplifies the signal noiselessly until diodes start to breakdown at gains around 100-150x.

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MOVPE e-APD test data for 2775-35 CDS Noise

(200ms integration time, 9V bias (avalanche gain x14), 83K)


The noise in this measurement is due to stray light in the Selex test kit of 200 photon/s/pix. There are generally few non-ideal pixels under these conditions

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Extending the e-APD process to J-Band

Selex funded activity Q1 2015 1   Find alternative buffer to avoid 1.3 um absorption 2   Introduce high temperature anneals to improve QE and response time in J band

University of Hawaii funded activity to trial two wafers

1   Outstanding cosmetic quality even at 14.5 V bias (x100 gain) 2   J band response demonstrated in one layer 3   Selex measurements suggest 50-60% QE at 1.55 um 4   More measurements being conducted at ESO, Selex and UH to characterize the

wide spectral response arrays

More funding required to improve the QE for wide spectral response arrays


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Signal 9.0V bias, 83K Signal median 73 mV 0 pixel defects

CDS noise 9.3V bias, 83K, 2 secs 1 pixel defect (>2x median)

20 ms 200 ms 2 sec

Outstanding cosmetic quality of wide spectral response arrays with high temperature anneal


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Funded by Don Hall (University of Hawaii)

To achieve the ultimate QE at low temperature for photon counting applications over a wide spectral range up to 4.0 µm.

•  New multiplication region designs •  Explore modified growth of absorber •  Continue work on high temperature anneals


Future Research and Development for e-APDs at Selex

Current discussions and proposals

Produce larger format Saphiras (512x512 / 24 um and 1024x1024 / 12 um), for wavefront sensing and instruments in 10m and 30m class telescopes. Improve QE in J band by new MOVPE designs and longer high temperature anneals Explore very low dark current operation for ‘read noise limited’ applications

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Joint European Torus Imager for fusion reactor core

200m VLT interferometer Wavefront sensors and fringe trackers with SAPHIRA

First infrared images of our galaxy 64x64 and 128x128 CCDs

Giant Magellan Telescope, Chile

European - Extremely Large Telescope

US Thirty Meter Telescope, Hawaii

Mount Paranal, ChileFirst on-sky avalanche photodiodes - Mount Palomar 60 inch Single photon sensitivity, fast framing SAPHIRA sensors

Selex with 1% lucky imaging Conventional imaging

Developing ultra-sensitive infrared arrays for the giant

telescope era

Key role in “Big Science” – past and future

Space-borne sensors


october 2015 presented by ian baker infrared detectors for... · october 2015 presented by ian...

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