MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 235

Phase Formation and Modification byBeam-Solid Interactions

Symposium held Decmber 2-6, 1991, Boston, Massachusetts, U.S.A.

EDITORS:

Gary S. Was

University of Michigan, Ann Arbor, Michigan, U.S.A.

Lynn E. Rehn

Argonne National Laboratory, Argonne, Illinois, U.S.A.

David M. Follstaedt

Sandia National Laboratories, Albuquerque, New Mexico, U.S.A.

llVrlT? 1^1 MATERIALS RESEARCH SOCIETY

|1V1|1\|D| Pittsburgh, Pennsylvania

Contents

PREFACE xvii

ACKNOWLEDGMENTS xix

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xx

PART I: AMORPHOUS SILICON

RADIATION-ENHANCED PLASTIC FLOW OF COVALENT MATERIALSDURING ION IRRADIATION 3

C.A. Volkert and A. Polman

PICOSECOND PHOTOCARRIER LIFETIMES IN ION-IRRADIATEDAMORPHOUS AND CRYSTALLINE SILICON 15

P.A. Stolk, L. Calcagnile, S. Roorda, H.B. van Linden van den Heuvell,and F.W. Saris

DYNAMICS OF CHANGE IN ELECTRICAL CONDUCTIVITY OF IONIRRADIATED AMORPHOUS SILICON 21

Jung H. Shin, J.S. Im, and H.A. Atwater

ENERGETIC ELECTRON BEAM INDUCED RECRYSTALLIZATIONOF ION IMPLANTATION DAMAGE IN SEMICONDUCTORS 27

M.W. Bench, I.M. Robertson, and M.A. Kirk

STUDY OF AMORPHIZATION PROCESS IN SILICON IRRADIATED

BY DIFFERENT IONS USING IN SITU STRESS-MEASUREMENTAND TEM TECHNIQUES 33

Jianzhong Yuan, Igor V. Verner, Sergei K. Maksimov, andJames W. Corbett

VACANCY-TYPE AND ELECTRICAL DEFECTS IN AMORPHOUSSILICON PROBED BY POSITRONS AND ELECTRONS 39

S. Roorda, R.A. Hakvoort, A. van Veen, P.A. Stolk, and F.W. Saris

A NEW METHOD FOR MEASURING ION IMPLANTATION AMORPHOUSDOSE IN SITU 45

Jianzhong Yuan, Igor V. Verner, and James W. Corbett

PHOTOLUMINESCENCE OF ERBIUM IN AMORPHOUS SILICON:

STRUCTURAL RELAXATION AND OPTICAL DOPING 51J.S. Custer, E. Snoeks, and A. Polman

SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED

Si0 7Ge„ 3GROWN ON (100) SILICON 57

C. Lee and K.S. Jones

NON-LINEAR AND TIME-DEPENDENT DIFFUSION OF GOLD INAMORPHOUS SILICON 65

A.V. Wagner, D.T. Wu, and F. Spaepen

IN-SITU TEM OBSERVATION OF DEFECTS AND AMORPHOUS PHASE

IN Si WAFER DURING ION IMPLANTATION 71

Naoto Shigenaka, Tuneyuki Hashimoto, Motomasa Fuse, Nobuo Owada,Hizuru Yamaguchi, and Seiko Ozono

*Invited Paper

v

DERELAXATION OF AMORPHOUS SILICON BY ION IMPLANTATION:

OPTICAL CHARACTERIZATION 77

R. Reitano, M.G. Grimaldi, P. Baeri, E. Bellandi, A. Borghesi, and

G. Baratta

EFFECTS OF FLUORINE IMPLANTATION INTO HYDROGENATEDAMORPHOUS SILICON 83

S.P. Wong, Shaoqi Peng, Ning Ke, and Jingxi Liu

PULSED LASER-INDUCED AMORPHIZATION OF SILICON FILMS 89

T. Sameshima and S. Usui

HEAT TRANSFER IN LASER ANNEALING OF SEMICONDUCTOR FILMS 95

CP. Grigoropoulos, X. Xu, S.L. Taylor, and H.K. Park

PART II: SOI/SIMOX

STRAIN RELIEF AND DEFECT FORMATION IN HIGH DOSE OXYGEN

IMPLANTED SILICON 103

D. Venables, K.S. Jones, F. Namavar, and J.M. Manke

ULTRATHIN SOI STRUCTURES BY LOW ENERGY OXYGEN

IMPLANTATION 109

Fereydoon Namavar, E. Cortesi, B. Buchanan, J.M. Manke, and

N.M. Kalkhoran

AN INVESTIGATION OF BURIED LAYER FORMATION BY 40keV

OXYGEN IMPLANTATION INTO SILICON 115

Y. Li, J.A. Kilner, R.J. Chater, T.J. Tate, P.L.F. Hemment, and

A. Nejim

RAMAN MICROPROBE ANALYSIS OF SIMOX STRUCTURES IMPLANTED

WITH SCREEN OXIDE 121

A. Perez-Rodriguez, J.R. Morante, E. Martin, J. Jimenez, J. Margail,and M.A. Papon

FORMATION OF A BURIED STACKED INSULATOR BY ION BEAM

SYNTHESIS 127

W. Skorupa, R. Grotzschel, K. Wollschlager, J. Albrecht, and H. Vohse

EFFECT OF INTERMEDIATE THERMAL PROCESSING ON

MICROSTRUCTURAL CHANGES OF OXYGEN IMPLANTED

SILICON-ON-INSULATOR MATERIAL 133

J.D. Lee, J.C. Park, S.J. Krause, P. Roitman, and M.K. El-Ghor

FEASIBILITY OF SIMOX MATERIAL QUALITY DETERMINATION

USING SPECTROELLIPSOMETRY: COMPARISON WITH RAMAN

AND PLANAR VIEW TRANSMISSION ELECTRON MICROSCOPY 139

G.M. Crean, S. Lynch, R. Greef, J. Stoemenos, U. Rossow, and W. Richter

LOCALIZED CRYSTALLINITY MEASUREMENT OF SINGLE-CRYSTALGe ON INSULATOR BY RAMAN POLARIZATION 145

K. Kato and M. Takai

EVOLUTION OF BURIED OXIDE "PIPE" DEFECTS UPON

IMPLANTATION THROUGH PARTICLES IN SIMOX MATERIAL 153M.K. El-Ghor, K.A. Joyner, and H.H. Hosack

"EQUILIBRIUM OXIDE" FEATURES OF THE SIMOX PROCESS 159

H.H. Hosack, J. Hollingsworth, M.K. El-Ghor, and K.A. Joyner

vi

NUMERICAL SIMULATION OF ZONE-MELTING RECRYSTALLIZATIONOF THIN SILICON FILMS WITH A TUNGSTEN HALOGEN LAMP 165

Richard D. Robinson and Ioannis N. Miaoulis

PART III: IMPLANTATION OF SEMICONDUCTORS

AVOIDING DISLOCATION FORMATION FOR B, P, AND As IMPLANTSIN SILICON 173

J.R. Liefting, V. Raineri, R.J. Schreutelkamp, J.S. Custer, andF.W. Saris

C IMPLANTATION FOR SUPPRESSION OF DISLOCATION FORMATION 179J.R. Liefting, J.S. Custer, and F.W. Saris

X-RAY DIFFRACTION ANALYSIS OF DAMAGE AND DOPINGEFFECTS IN LOW-DOSE, HIGH-ENERGY IMPLANTED SILICON 185

Jos G.E. Klappe, Istvan Barsony, and Tom W. Ryan

OXIDATION EFFECTS DURING THE FORMATION OF BURIED SbDOPANT PROFILES IN SILICON USING PULSED LASER EPITAXY 191

Randall J. Carolissen and R. Pretorius

DEPENDENCE OF PROFILES OF ARSENIC IMPLANTED INTOSILICON ON TILT AND ROTATION ANGLES 197

S. Yang, C. Park, K. Klein, P. Gupta, A. Tasch, R. Simonton, G. Lux,and C. McGee

THE DETAILED VARIATION OF BORON AND FLUORINE PROFILESWITH TILT AND ROTATION ANGLES FOR BF2+ ION IMPLANTATIONIN (100) SILICON 203

Puneet Gupta, Changhae Park, Kevin Klein, Shyh-horng Yang,Steve Morris, Vu Do, Al Tasch, Robert Simonton, and Gayle Lux

THERMAL ANNEALING OF SHALLOW IMPLANTED PHOSPHORUS IN Si(100) 211

Ning Yu, K.B. Ma, Z.H. Zhang, W.K. Chu, C. Kirschbaum, andK. Varahramyan

A NEW COMPUTATIONALLY-EFFICIENT TWO-DIMENSIONAL MODELFOR BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON 217

K.M. Klein, C. Park, S. Yang, S. Morris, V. Do, and A.F. Tasch

LOCALIZED STATES IN ELECTRON-IRRADIATED GaAs 223S.D. Kouimtzi, C. Melidis, and C. Achilleos

THE ENERGY DEPENDENCE OF ION DAMAGE IN ALGa, xAs/GaAsHETEROSTRUCTURES AND THE EFFECTS OF IMPLANTED IMPURITY 229

A.G. Cullis, D.C. Jacobson, A. Polman, P.W. Smith, J.M. Poate, andC.R. Whitehouse

ANISOTROPIC DAMAGE PRODUCTION AT ION IRRADIATED GaAs/AlAsINTERFACES 235

J.L. Klatt, J. Alwan, J.J. Coleman, and R.S. Averback

CHARACTERIZATION OF NOVEL EMISSIONS IN Mg+-IMPLANTED InP 241Tsutomu Iida, Yunosuke Makita, Shigeru Niki, Akimasa Yamada,Hisao Asakura, Shinji Kimura, Akira Obara, and Shin-ichiro Uekusa

Sb IMPLANTATION IN Si,.xGex/Si(100) STRUCTURES 247Z. Atzmon, M. Eizenberg, P. Revesz, J.W. Mayer, and F. Schaffler

vii

PART IV: SILICIDES/BURIED LAYERS

DIFFUSION AND PHASE FORMATION DURING COMBINED HEATINGAND SPUTTER ETCHING 255

J.M.E. Harper, Q.Z. Hong, S. Motakef, and R. Kelly

SILICIDE FORMATION IN HIGH-DOSE Fe-IMPLANTED SILICON 267

Z. Tan, F. Namavar, S.M. Heald, J.I. Budnick, and F.H. Sanchez

GROWTH OF ION IMPLANTED BURIED FeSi2 ON Si(lll) AND Si(100) 273K. Radermacher, S. Mantl, Ch. Dieker, H. Holzbrecher, W. Speier,and H. Liith

MESOTAXY LAYERS OF IrSi, IN (lll)Si FORMED BY MeV IONIMPLANTATION 279

K.T. Short, Alice E. White, D.J. Eaglesham, D.C. Jacobson,and J.M. Poate

DEPENDENCE OF BURIED CoSi, RESISTIVITY ON ION

IMPLANTATION AND ANNEAL*NG CONDITIONS 285

Fereydoon Namavar, N.M. Kalkhoran, J.M. Manke, L. Luo,and J.T. McGinn

FORMATION OF BURIED EPITAXIAL Si-Ge ALLOY LAYERS INSi< 100 > CRYSTAL BY HIGH DOSE Ge ION IMPLANTATION 293

Kin Man Yu, Ian G. Brown, and Seongil Im

ION IMPLANTATION OF HIGH DOSES OF Co IN Sij Gex ALLOYS 299

A. Lauwers, K. Maex, W. Vandervorst, G. Brijs, J. Poortmans,M. Caymax, J. Vanhellemont, and S. Petersson

PROCESS AND SIMULATION OF TiSi2/n+/p SILICON SHALLOWJUNCTIONS 305

Ying Wu, W. Savin, T. Fink, N.M. Ravindra, R.T. Lareau,R.L. Pfeffer, L.G. Yerke, and C. Wrenn

A NOVEL PROCESS TO FORM EPITAXIAL Si STRUCTURES WITH

BURIED SILICIDE 313

Yu.N. Erokhin, R. Grotzschel, S.R. Oktyabrski, S. Roorda,W. Sinke, and A.F. Vjatkin

TEMPERATURE DEPENDENCE OF Ar SPUTTERING OF CoSi, THINFILMS ON Si AND Si02 319

Q.Z. Hong and J.M.E. Harper

PHASE FORMATION OF PLATINUM SILICIDES FORMED BY ION

IMPLANTATION 325

Nader M. Kalkhoran, F. Namavar, D. Perry, and E. Cortesi

PART V: ION BOMBARDMENT OF INSULATORS

ION BEAM-INDUCED AMORPHIZATION OF (Mg,Fe)2Si04 OLIVINESERIES: AN IN SITU TRANSMISSION ELECTRON MICROSCOPYSTUDY 333

L.M. Wang and R.C. Ewing

IN-SITU TEM OBSERVATIONS OF ELECTRON BEAM-STIMULATED

REACTIONS IN NIO UNDER OXIDIZING AND REDUCING ATMOSPHERES 339M.I. Buckett and L.D. Marks

*Invited Paper

viii

XPS INVESTIGATION OF ION IMPLANTED PMMAR. Kallweit, U. Roll, H. Strack, and A. Pocker

345

TEMPERATURE EFFECTS IN ION BEAM MIXING OF OXIDE-OXIDE

INTERFACES 351D.L. Joslin, L.J. Romana, C.W. White, C.J. McHargue, P.A. Thevenard,and L.L. Horton

CHARACTERIZATION OF ION IRRADIATED ZIRCONIA-YTTRIA FILMS 357

N.K. Huang, Z.R. Feng, Z.K. Xiong, D.Z. Wang, and P.L. Wang

DISTRIBUTION AND CHARACTERIZATION OF IRON IN IMPLANTEDSILICON CARBIDE 363

J. Bentley, L.J. Romana, L.L. Horton, and C.J. McHargue

MeV SELF ION BEAM INDUCED AMORPHISATION OF SILICONCARBIDE SURFACES AND ITS EFFECT ON THEIR TRIBOMECHANICALPROPERTIES 369

D.K. Sood, V.C. Nath, and Yang Xi

ERBIUM-DEFECT INTERACTIONS IN SILICA FILMS IMPLANTEDWITH MeV Er IONS 377

A. Polman, D.C. Jacobson, and J.M. Poate

OPTICAL AND INFRARED SPECTROSCOPY OF LASER IRRADIATED

Bi IMPLANTED Si02 GLASSES 383

R.H. Magruder, III, D.O. Henderson, S.H. Morgan, and R.A. Zuhr

FORMATION OF Au COLLOID PARTICLES IN SILICA GLASS BY IONIMPLANTATION 389

K. Fukumi, A. Chayahara, M. Adachi, K. Kadono, T. Sakaguchi,M. Miya, Y. Horino, N. Kitamura, J. Hayakawa, H. Yamashita,K. Fujii, and M. Satou

DYNAMIC REDISTRIBUTION OF EXCESS CHARGE DURING

PHOTOEMISSION IN AN ELECTRON BOMBARDED GLASS-CERAMIC 395

D.L. Carroll, D.L. Doering, and B.S Blais

THE ROLE OF BALLISTIC, ELECTRONIC, AND THERMAL PROCESSESIN ELECTRON IRRADIATION DAMAGE OF MAXIMUM VALENCETRANSITION METAL OXIDE SURFACES 401

M.I. Buckett and L.D. Marks

COLLISIONAL ENERGY DEPOSITION THRESHOLD FOR EXTENDED

DAMAGE DEPTHS IN ION-IMPLANTED SILICATES 407

G.W. Arnold, G. Battaglin, A. Boscolo-Boscoletto, F. Caccavalle,G. De Marchi, and P. Mazzoldi

PLASTIC DEFORMATION AND MICRO-FRACTURE IN SiO, INDUCED

BY ELECTRON BEAM IRRADIATION 413

P.M. Ajayan and Sumio Iijima

ANNEALING OF Pb-IMPLANTED SrTiO, IN THE PRESENCE OF WATERVAPOUR: A STUDY USING D2180 LABELLING 419

J.C. McCallum, T.W. Simpson, I.V. Mitchell, J. Rankin,and L.A. Boatner

EXAMINATION OF ION BEAM-TARGET ANGLE EFFECTS BY OPTICAL

SPECTROSCOPIC PROFILING 425

J.D. Klein and A. Yen

ix

PULSED LASER ANNEALING OF BURIED DAMAGE IN ION IMPLANTEDDIAMOND 431

Steven Prawer, D.N. Jamieson, S.P. Dooley, P. Spizzirri,K.P. Ghiggino, and R. Kalish

THE BEHAVIOR OF INTERSTITIALS IN IRRADIATED GRAPHITE 437

D.F. Pedraza

HARDENING IN A1N INDUCED BY POINT DEFECTS 445

H. Suematsu, T.E. Mitchell, T. Iseki, and T. Yano

PART VI: IRRADIATION OF METALS/INTERMETALLICS

*IN SITU TRANSMISSION ELECTRON MICROSCOPE STUDIES OF ION

IRRADIATION-INDUCED AND IRRADIATION-ENHANCED PHASE CHANGES 451Charles W. Allen

IRRADIATION DAMAGE IN Zr3Fe 461

L.M. Howe, M.H. Rainville, and D. Phillips

STABILITY OF URANIUM SILICIDES DURING HIGH ENERGYION IRRADIATION 467

R.C. Birtcher and L.M. Wang

ROLE OF CHROMIUM IN HIGH-DOSE, HIGH-RATE, ELEVATED

TEMPERATURE NITROGEN IMPLANTATION OF AUSTENITICSTAINLESS STEELS 473

D.L. Williamson, I. Ivanov, R. Wei, and P.J. Wilbur

PHASE TRANSFORMATIONS BY YTTRIUM IMPLANTATION INTO

PURE ALUMINUM 479

X.G. Ning, C.Z. Ji, and H.Q. Ye

SMALL LEAD AND INDIUM INCLUSIONS IN ALUMINIUM 485E. Johnson, K. Hjemsted, B. Schmidt, K.K. Bourdelle, A. Johansen,H.H. Andersen, and L. Sarholt-Kristensen

IMPLANTATION OF NITROGEN INTO Ti/Al, Ni/Ti, AND Ni/AlBILAYERS 491

D.O. Boerma and T. Corts

RBS/CHANNELING DIFFUSION STUDIES OF HIGH ENERGY AuIMPLANTED Mg SINGLE CRYSTALS 497

R.C. da Silva, M.F. da Silva, L. Thom6, A.A. Melo, and J.C. Soares

ANALYSIS OF EXPERIMENTS IN HELIUM MICROBEAM MIXING 503John B. Davis, R.E. Benenson, and David Peak

MOSSBAUER STUDY OF THE ROLE OF ALUMINUM AND CHROMIUM

IN NITROGEN IMPLANTED IRON 509M. Kopcewicz, J. Jagielski, A. Turos, and D.L. Williamson

METASTABLE PHASE FORMATION IN THE Y-Ti SYSTEM BY ION MIXING 515S.L. Lai, Z.J. Zhang, J.R. Ding, and B.X. Liu

Al-Yb AMORPHOUS ALLOYS PRODUCED BY ION MIXING ORSOLID STATE REACTION 521

B.X. Liu, J.R. Ding, D.Z. Che, and H.B. Zhang

Invited Paper

x

RADIATION ENHANCED TRACER DIFFUSION IN INTERMETALLICALLOYS 527

Y.S. Lee, R.S. Averback, and CP. Flynn

MOLECULAR DYNAMICS SIMULATIONS OF LOW ENERGYDISPLACEMENT CASCADES IN THE ORDERED COMPOUND CuTi 533

H. Zhu, N.Q. Lam, R. Devanathan, and M.J. Sabochick

MOLECULAR DYNAMICS SIMULATION OF ELECTRON IRRADIATION-INDUCED AMORPHIZATION OF THE ORDERED COMPOUND NiZr 539

R. Devanathan, N.Q. Lam, M.J. Sabochick, P.R. Okamoto, and M. Meshii

THE EFFECT OF ION IRRADIATION ON INERT GAS BUBBLE MOBILITY 545Dale E. Alexander and R.C. Birtcher

STRUCTURE TRANSFORMATIONS OF THE DECAGONAL ANDICOSAHEDRAL PHASES IN QUATERNARY ALLOYS 551

R. Perez, J. Reyes-Gasga, and M. Jose-Yacaman

INTERDIFFUSION AND GRAIN-BOUNDARY MIGRATION INAu/Cu BILAYERS DURING ION-IRRADIATION 559

Dale E. Alexander, L.E. Rehn, and Peter M. Baldo

THE EFFECT OF THERMAL SPIKE ON THE ION IRRADIATION INDUCEDGRAIN GROWTH 565

K.H. Chae, J.H. Song, J.H. Joo, J.J. Woo, C.N. Whang, Y.J. Oh,and H.J. Jung

ION INDUCED GRAIN GROWTH IN Pd 571D.A. Lilienfeld, P. Bdrgesen, and P. Meyer

NANOINDENTATION HARDNESS OF 17-4PH STAINLESS STEELIRRADIATED WITH 2.5 MeV PER NUCLEON 20Ne2+ IONS 577

D.S. Grummon, R. Schalek, T. Rachel, H. Schock, R.M. Ronningen,and Wm. C. McHarris

EXCIMER LASER IRRADIATION OF METALLIC FILMS ON CERAMICSUBSTRATES 583

M.J. Godbole, A.J. Pedraza, D.H. Lowndes, and J.R. Thompson, Jr.

FATIGUE OF ALUMINUM FILMS LEADING TO MELTING BY

MULTIPLE LASER PULSES 589Joseph B. Bernstein, Simon S. Cohen, and Peter W. Wyatt

PART VII: CLUSTER BEAMS

*NOVEL PATHS FOR NUCLEATION AND GROWTH OF THIN FILMS

BY IONIZED CLUSTER BEAM (ICB) TECHNIQUES: ATOMIC-SCALEOBSERVATIONS 597

I. Yamada, T. Yamada, G.H. Takaoka, H. Usui, and M.I. Current

FUNDAMENTAL ASPECTS OF ENERGETIC COLLISIONS BETWEEN

CLUSTERS OF ATOMS AND METAL SURFACES 609R.S. Averback and H. Hsieh

FORMATION OF ALUMINUM FILMS USING A HIGH RATE ICB SOURCE 615

H. Tsukazaki, G. Okamoto, Y. Hashimoto, K. Yamanishi,M. Tanaka, and S. Yasunaga

*Invited Paper

xi

EPITAXIAL Al(llO) FILMS GROWN ON HEAVILY-DOPED Si(100) BYCLUSTER BEAM DEPOSITION 621

S. Wada, M.I. Current, G.H. Takaoka, H. Usui, and I. Yamada

XPS AND FTIR STUDY OF THE THIN POLYIMIDE FILMS

FABRICATED BY IONIZED CLUSTER BEAM DEPOSITION 627K.W. Kim, K.H. Chae, S.C. Choi, S.J. Cho, Y.W. Vahc, C.N. Whang,H.J. Jung, D.H. Lee, and J.K. Lee

PART VIII: BEAM-ENHANCED FLUX PINNING

HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPE STUDY

OF ELECTRON-BEAM INDUCED DAMAGE IN SOME OXIDE

SUPERCONDUCTORS 635

Yoshio Matsui and Kasumi Yanagisawa

THERMAL NEUTRON IRRADIATION AND LARGE PINNINGENHANCEMENT IN SUPERCONDUCTING MATERIALS 647

Y.J. Zhao, J.R. Liu, R.L. Meng, P.H. Hor, and W.K. Chu

MAGNETIC FIELD DEPENDENCE OF J„ IN A Tl-1223 WIRE; PRESENCEOF PINNING AND GOOD GRAIN BOUNDARY CONNECTIVITY 653

Toshiya J. Doi, Toshihide Nabatame, Michiya Okada, Toyotaka Yuasa,Kazuhide Tanaka, Naomi Inoue, Atsuko Soeta, Katsuzo Aihara,Tomoichi Kamo, and Shin-Pei Matsuda

LAYER THICKNESS DEPENDENCE OF TRANSPORT PROPERTIESIN Y,Ba2Cu307 SUPERCONDUCTING MULTILAYER FILMS 659

Sang Yeol Lee, Eiki Narumi, and David T. Shaw

STUDIES OF CRITICAL CURRENT DENSITY ENHANCEMENT IN

(Ca^JBa-G^Og (1:2:4) 665

P.K. Narwankar, M.R. Chandrachood, M. Fendorf, D.W. Morris,A.P.B. Sinha, and R. Gronsky

TRAPPED MAGNETIC FIELD IN PROTON IRRADIATED MELT-TEXTURED

Y-Ba-Cu-0 SUPERCONDUCTORS 671

In-Gann Chen, Jianxiong Liu, and Roy Weinstein

WEAK PINNING CENTERS IN PROTON IRRADIATED YBCO SINGLE

CRYSTALS 677

Y.J. Zhao, J.R. Liu, Y.K. Tao, P.H. Hor, and W.K. Chu

TEM STUDY OF FLUX PINNING DEFECTS IN YBa2Cu307H5PRODUCED BY 580 MeV Sn ION IRRADIATION 683

R. Wheeler, M.A. Kirk, R. Brown, A.D. Marwick, L. Civale, andF.H. Holtzberg

IRRADIATION EFFECT OF SLOW NEUTRONS ON MECHANICAL

BEHAVIOUR RELATED TO FLUX PINNING IN YBaXuoO,, 689

J.S. Zhu, J. Li, Y.N. Wang, J.R. Jin, M. Gu, S.Y. Ding, X. Jin,P.C.W. Fung, and Z.M. Liu

ENHANCEMENT OF PINNING ENERGY AND CRITICAL CURRENT DENSITYIN T^CaBajCujOg FILMS BY PROTON IRRADIATION 695

M.E. Reeves, B.D. Weaver, G.P. Summers, R.J. Soulen, Jr.,W.L. Olson, M.M. Eddy, T.W. James, and E.J. Smith

*Invited Paper

xii

ORIENTATION DEPENDENCE OF FLUX PINNING IN A LAYERED

Bi2Sr2Ca!Cu208 + 10% Ag COMPOSITE 701

Maria Foldeaki and Hassel Ledbetter

NANOSCALE Y,03 PHASE DISPERSION IN YBajCihO, _THIN

FILMS PRODUCED BY PLASMA-ENHANCED METALORGANIC

CHEMICAL VAPOR DEPOSITION 707

P. Lu, J. Zhao, C.S. Chern, Y.Q. Li, G.A. Kulesha, B. Gallois,P. Norris, B. Kear, and F. Cosandey

PART IX: ION-ASSISTED AND PLASMA DEPOSITION

STRESS AND PHASE CHANGES IN ION-ASSISTED EVAPORATION OF THIN

TANTALUM FILMS 715

R.A. Roy and Philip Catania

ION BEAM ASSISTED DEPOSITION OF CUBIC BORON NITRIDE

THIN FILMS 721

Daniel J. Kester and Russell Messier

COPPER-CARBON ALLOY FILMS BY METHANE BEAM ASSISTEDEPITAXIAL COPPER DEPOSITION 729

David W. Brown, Edward P. Donovan, Catherine M. Cotell, and

Kenneth S. Grabowski

INFLUENCE OF ENERGY DEPOSITED BY ENERGETIC PARTICLE

BOMBARDMENT ON THIN FILM CHARACTERISTICS 735

Harold F. Winters, W. Eckstein, and H.J. Coufal

SIMULATIONS OF LOW-ENERGY ION BOMBARDMENT AND EPITAXIAL

GROWTH 743

E. Chason, P. Bedrossian, J.Y. Tsao, B.W. Dodson, and S.T. Picraux

*EPITAXY AND CHEMICAL REACTIONS DURING THIN FILM

FORMATION FROM LOW ENERGY IONS: NEW KINETIC PATHWAYS,NEW PHASES AND NEW PROPERTIES 749

Nicole Herbots, O.C. Hellman, and O. Vancauwenberghe

IN SITU OBSERVATION OF GROWING PROCESS OF PARTICLES

IN SILANE PLASMAS AND THEIR EFFECTS ON AMORPHOUS

SILICON DEPOSITION 763

Masaharu Shiratani and Yukio Watanabe

ATOMIC OXYGEN PLASMA EFFECTS ON CVD DEPOSITED

DIAMOND-LIKE CARBON FILMS 769

Jeffrey S. Hale, R.A. Synowicki, S. Nafis, and John A. Woollam

HYDROGEN IN DIELECTRIC FILM FORMATION FROM AN

ELECTRON CYCLOTRON RESONANCE PLASMA 775

J.C. Barbour and H.J. Stein

LOW TEMPERATURE SILICON OXIDATION WITH ELECTRON

CYCLOTRON RESONANCE OXYGEN PLASMA 781

K.T. Sung and S.W. Pang

LOW ENERGY ION BEAM MODIFICATION OF HIGH PERFORMANCE

POLYMER 787

Hyo-Soo Jeong and R.C. White

*Invited Paper

xiii

LOW-ENERGY Ar+ IMPLANTATION OF UHMW-PE FIBERS: EFFECT ON

SURFACE ENERGY, CHEMISTRY, AND ADHESION CHARACTERISTICS

R. Schalek, M. Hlavacek, and D.S. Grummon

Si-N BONDING AT THE Si02/Si INTERFACES DURINGDEPOSITION OF Si02 BY THE REMOTE PECVD PROCESS

Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky

LOW TEMPERATURE SILICON EPITAXIAL GROWTH BY PLASMA

ENHANCED CHEMICAL VAPOR DEPOSITION FROM SiH4/He/H2Yung-Jen Lin, Ming-Deng Shieh, Chiapying Lee, and Tn-Rung Yew

GROWTH AND HIGH RESOLUTION TEM CHARACTERIZATION OF

GexSi, X/Si HETERO-STRUCTURES BY REMOTE PLASMA-ENHANCED

CHEMICAL VAPOR DEPOSITIONR. Qian, I. Chung, D. Kinosky, T. Hsu, J. Irby, A. Mahajan,S. Thomas, S. Banerjee, A. Tasch, L. Rabenberg, C. Grove,and C. Magee

PART X: PULSED LASER DEPOSITION

CHARACTERIZATION OF THE DEPOSITING FLUX IN LASER ABLATION

DEPOSITION (LAD)Jacques C.S. Kools and Jan Dieleman

DYNAMICS OF GRAPHITE PHOTOABLATION

P.T. Murray, D.T. Peeler, and D.V. Dempsey

GROWTH MECHANISM AND FILM PROPERTIES IN PULSED

LASER-PLASMA DEPOSITIONS. Metev and K. Meteva

IN-SITU ELLIPSOMETRY STUDY OF PULSED LASER DEPOSITED

ZnO FILMS

Shakil Pittal, L.A. McConville, N.J. Ianno, and P.G. Snyder

EFFECTS OF PROCESSING PARAMETERS ON KrF EXCIMER LASER

ABLATION DEPOSITED Zr02 FILMS

Gary A. Smith, Li-Chyong Chen, and Mei-Chen Chuang

SYNTHESIS AND CHARACTERIZATION OF PbO FILMS GROWN BY

PULSED LASER DEPOSITION

J.S. Zabinski, M.S. Donley, V.J. Dyhouse, R. Moore, and

N.T. McDevitt

PROCESSING OF Y.BaXujO, _

SUPERCONDUCTING THIN FILMS ON

GaAs SUBSTRATES WFTH DOUBLE BUFFER LAYERS

Sang Yeol Lee, Quanxi Jia, Wayne A. Anderson, and David T. Shaw

CHARACTERIZATION OF HIGH TEMPERATURE SUPERCONDUCTINGTHIN FILM GROWN BY LASER ABLATION METHOD

K. Shimizu, H. Nobumasa, N. Nagai, T. Matsunobe, and T. Kawai

IN SITU CHARACTERIZATION OF THE PULSED LASER DEPOSITION

OF MAGNETIC THIN FILMS

A.J. Paul, D.W. Bonnell, J.W. Hastie, P.K. Schenck, R.D. Shull,and J.J. Ritter

LOW TEMPERATURE SYNTHESIS OF CARBIDE THIN FILMS BY PULSED

LASER DEPOSITION (PLD)M.S. Donley, J.S. Zabinski, W.J. Sessler, V.J. Dyhouse, S.D. Walck,and N.T. McDevitt

xiv

THE ROLE OF HYDROGEN IN LASER DEPOSITION OF DIAMOND-LIKE

CARBON 879D. Thebert-Peeler, P.T. Murray, L. Petry, and T.W. Haas

GROWTH OF BN THIN FILMS BY PULSED LASER DEPOSITION 885

J.A. Knapp

PHOTOPHYSICS OF POLYATOMIC SPECIES EJECTION FOLLOWINGUV LASER ABLATION OF SINGLE CRYSTAL Bi^Ca^Og 891

Lawrence Wiedeman, Hyun-Sook Kim, and Henry Helvajian

COMPARISON IN SURFACE MODIFICATIONS OF SINTERED ANDSINGLE CRYSTAL CERAMIC TARGETS AFTER LASER ABLATION 897

K.H. Young

AUTHOR INDEX 905

SUBJECT INDEX 911

xv