physical electronics

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PHYSICAL ELECTRONICS ECX 5239 PRESENTATION – 01 C.R.M. ANTHONY 409062137 2014-01-10

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Page 1: Physical electronics

PHYSICAL ELECTRONICSECX 5239

PRESENTATION – 01

C.R.M. ANTHONY4090621372014-01-10

Page 2: Physical electronics

conductivity variation in semiconductors

It depends

on mainly two

factors ,

Atomic bond

Energy band

structure

conductivity

Page 3: Physical electronics

Conductors

Conductors are generally substances which have the property to pass different types of energy.

Semiconductors

Semiconductors are solids whose conductivity lies between the conductivity of conductors and insulators. Due to exchange of electrons - to achieve the noble gas config-uration - semiconductors arrange as lattice structure. Unlike metals, the conductivity increases with increasing temperature.

Insulators

Insulators possess no free charge carriers and thus are non-conductive.

Page 4: Physical electronics

Energy band structure

Page 5: Physical electronics

Semiconductor energy bands at room temperature

Full valanceband

Empty conductionband

+e- +e- +e- +e-Energy

Page 6: Physical electronics

ATOMIC BONDING

Page 7: Physical electronics

Conductivity of Semiconductors

Consider the conductivity of a semiconductors

conductivity of a semiconductors = Charge of electrons & = Concentration of electrons & holes & = Mobility of electrons & holes Conductivity of electrons, = Conductivity of holes, =

Page 8: Physical electronics

The variation of the drift mobility with dopant concentration in Si for electrons and holes at 300 K.

At room temperature T= 300 K. & Using the above graph conductivity of this sample at room temperature

= = 21.6//

Page 9: Physical electronics

The temperature dependence of the intrinsic concentration.

Page 10: Physical electronics

Intrinsic concentration == 1 ×

If Intrinsic ;

Using the above graph of (T) 1/T, we have:

1 × 1.9

= 526 K //

Page 11: Physical electronics

Q7).

𝐵𝑧

𝐵𝑧

𝐼 𝑥

Y𝐵𝑧𝐵𝑧

𝐵𝑧

P e

𝐹 𝑦

𝐸𝑝

𝐸𝑒

𝐸𝑝P

Page 12: Physical electronics

In the y-direction there is no net current, therefore ………………………………(1) ……………………………………………………….....(2)

There are driving forces activated on both electron & holes to drift along y axis. The net force experienced by the carriers…………………………………………..………(3)………………………………………………(4)Also, we can write the net force again as; ……………………………………….....(5) ………………………...............(6)Now we can equalize; (3)=(5) ………..….(7)& (4)=(6)…………………………………..(8)

P

e

−𝐹 𝑒𝑦

𝐹 𝑝𝑦

Page 13: Physical electronics

Using above equation (7) & (8) substituting in eq(2) ,we can solve & obtain ;

Finally represent hole coefficient is; …………………………………(9)After that; ; Substituting the mass action law into Equation (9) we get; ……………………………………….(10)

Page 14: Physical electronics

differentiation by n;

For maximize ; Resultant n is below which is leady for maximize ,

 

Page 15: Physical electronics

Thank you!