proceedings contents shanghai world expo exhibition and
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Proceedings Contents
27 – 29 June 2017, Shanghai, China
Conference Program
28 30 June 2016Shanghai World Expo Exhibition and Convention CenterShanghai, China
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Conference from 28-29 June 2016
2 Seminars on 30 June 2016
Exhibitor forum from 28-30 June 2016
Power for Efficiency!
Organizer: Guangzhou Guangya Messe Frankfurt Co Ltd.Guangzhou, Chinawww.pcimasia-expo.com
Chairman:Leo Lorenz, ECPE, D
Enrique J. Dede, ETSE University of Valencia, ENaoto Fujishima, Fuji Electric, J
Yongdong Li, Tsinghua University, CNJinjun Liu, Xi´an Jiaotong University, CN
Gourab Majumdar, Mitsubishi Electric Corporation, JNorbert Pluschke, Semikron, HK
Xinbo Ruan, Huazhong University of Science and Technology, CNZhihong Wu, Tongjii University, CNDehong Xu, Zhejiang University, CN
Dianguo Xu, Harbin Institute of Technology, CNJianping Ying, Delta Electronics, CN
Dapeng Zheng, Shenzhen Hopewind Electric, CN
Organizer:Guangzhou Guangya Messe Frankfurt Co Ltd.
Room A2001, Center Plaza, No.161 Linhe Road West, Tianhe District, Guangzhou, China
Partner:Mesago Messe Frankfurt GmbH
Rotebuehlstrasse 83-8570178 Stuttgart, Germany
www.pcimasia-expo.com
Bibliographic Information of the German National LibraryThe German National Library lists this publication in the National Bibliography; detailed bibliographic data are available on the Internet at http://dnb.dnb.de.
ISBN 978-3-8007-4429-9This edition is published as a CD-ROM.
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Invitation General Conference Director
Dear PCIM Asia participants,
It´s our great pleasure to welcome you to the PCIM Asia 2017 Conference and Exhibition.
International meeting point for power electronic experts in the Chinese market
PCIM Asia has grown up to be a technical platform with success and strong interests for innovations in the field of power electronics. It is the ideal forum to meet specialists from various fields of applications in industry and automotive electronics. My welcome message goes especially to the authors of oral and poster papers. Over the years PCIM Asia has been developed to the most prestigious forum to exchange information in important power electronics technologies. It is a key technical platform for researchers and product development engineers as well as decision makers and marketing specialists to detect new attractive business opportunities, and I am convinced that you will enjoy and appreciate this year’s event.
Attractive conference program
In six oral sessions and two poster sessions, the PCIM Asia Conference will address key development trends in wide bandgap power electronics, advanced power semiconductor devices, automotive power electronics, new power conversion concepts and renewable energy technologies. The two keynote presentations will cover the following topics: "Hybrid Renewable Energy Standalone Systems“ by Prof. Ambrish Chandra, ETS, Canada and "The Characteristics of Advanced Power Electronics Devices for High Performance Power Converters“ by Prof. Xiangning He, Zhejiang University, China. Further conference highlights will address advanced technologies for filter design and passive devices for MMC topologies. In particular new packaging concepts will be discussed to manage ultrafast switching devices in power electronic converters.
I am convinced that with this high level technical program and expert discussions, this years’ PCIM Asia Conference will provide you with an overview of new milestones in power electronic system developments and inspire you to pursue new business opportunities.
I look forward to welcoming you in Shanghai.
Leo Lorenz General Conference Director Germany
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Advisory Board and Technical Committee PCIM Asia 2017
Chairman
Prof. Leo Lorenz, ECPE, D
Board of Directors
Prof. Dr. Enrique J. Dede, ETSE University of Valencia, E Dr. Naoto Fujishima, Fuji Electric, J Prof. Yongdong Li, Tsinghua University, CN Prof. Dr. Jinjun Liu, Xi´an Jiaotong University, CN Dr. Gourab Majumdar, Mitsubishi Electric Corporation, J Norbert Pluschke, Semikron, HK Prof. Xinbo Ruan, Huazhong University of Science and Technology, CN Prof. Zhihong Wu, Tongji University, CN Prof. Dehong Xu, Zhejiang University, CN Prof. Dianguo Xu, Harbin Institute of Technology, CN Dr. Jianping Ying, Delta Electronics, CN Dr. Dapeng Zheng, Shenzhen Hopewind Electric, CN
Technical Committee
Jean-Paul Beaudet, Schneider Electric, F Prof. Min Chen, Zhejiang University, CN Roger Chen, Vincotech, CN Dr. Youngchul Choi, ON Semiconductor, USA Dr. Chuang Fu, China Southern Power Grid Technology Research Center, CN Prof. Yong Kang, Huazhong University of Science and Technology, CN Romeo Letor, STMicroeletronics, IT Prof. Meiqin Mao, Hefei University of Technology, CN Abhijit D. Pathak, International Rectifier, USA Prof. Tianhao Tang, Shanghai Maritime University, CN Prof. Gaolin Wang, Harbin Institute of Technology, CN Patrick Wang, ON Semiconductor, F Prof. Xuhui Wen, Chinese Academy of Science, CN Dr. James Yin-Chin Wu, Hosonic Electronic Corporation Group, TW Dr. Lie Xu, Tsinghua University, CN Prof. Xing Zhang, Hefei University of Technology, CN
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Table of Content PCIM Asia 2017 Special Session: Wide Bandgap Power Electronics High Efficiency Control Method for Non-Isolated Three-Port DC/DC Converter ................... 13 Yunchao Han, Friedrich-Alexander-University Erlangen-Nuremberg, Germany Julian Kaiser, Fraunhofer IISB, Erlangen, Germany Leopold Ott, Fraunhofer IISB, Erlangen, Germany Matthias Schulz, Fraunhofer IISB, Erlangen, Germany Fabian Fersterra, Fraunhofer IISB, Erlangen, Germany Kilian Gosses, Fraunhofer IISB, Erlangen, Germany Bernd Wunder, Fraunhofer IISB, Erlangen, Germany Martin, März, Fraunhofer IISB, Erlangen, Germany Impact of SiC on Power Supplies and Drives to Save Energy and Materials ....................... 20 Tatsuhiko Fujihira, Fuji Electric Co., Ltd., Japan Naoto Fujishima, Fuji Electric Co., Ltd., Japan Hiroshi Kimura, Fuji Electric Co., Ltd., Japan Masahiro Kikuchi, Fuji Electric Co., Ltd., Japan Hidenori Takahashi, Fuji Electric Co., Ltd., Japan Osamu Ikawa, Fuji Electric Co., Ltd., Japan Masahito Otsuki, Fuji Electric Co., Ltd., Japan Yasushi Matsumoto, Fuji Electric Co., Ltd., Japan GaN Gate Injection Transistor for Reliable Power Supply Solution ...................................... 28 Howard Sin Ban How, Panasonic Industrial Devices Semiconductor Asia, Singapore Recent progress in SiC power devices for power electronics appiications ........................... 35 Hiroshi Watanabe, Mitsubishi Electric, Japan Keynote Hybrid Renewable Energy Standalone Systems ...................................................................... 36 Ambrish Chandra, École de Technologie Supérieure (ETS), Canada Poster Session Three-dimensional temperature field analysis of Wind power busbar slot connector .......... 37 Xinbo Huang, Xi’an Polytechnic University, China Jie Zhang, Xi’an Polytechnic University, China Yi Tian, Xidian University, China An application of new generation IGBT module on 3-level I-type NPC PV-inverter .............. 42 Yuancheng Zhang, Mitsubishi Electric & Electronic, China Nobuya Nishida, Power Device Works, Mitsubishi Electric, Japan Xiankui Ma, Mitsubishi Electric & Electronic, China Gaosheng Song, Mitsubishi Electric & Electronic, China
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Application Perspective Based IGBT5 Module Performance .................................................. 46 Zhao Zhenbo, Infineon Technologies, China Chiang Weishih, Infineon Technologies, China Qin Haiyang, Shanghai Maritime University, China 7th Generation IGBT Modules Integrating Converter Inverter Brake ..................................... 52 Bo Hu, Mitsubishi Electric & Electronics, China Xiankui Ma, Mitsubishi Electric & Electronics, China Gaosheng Song, Mitsubishi Electric & Electronics, China Influence of parasitic resistance on current sharing of IGBT module ................................... 58 Longfei, Xie, CRRC Yongji Electric, China Na, Ye, CRRC Yongji Electric, China Lin, Cao, CRRC Yongji Electric, China Kai,Yu,, CRRC Yongji Electric, China Research on Reversing Current Phenomenon of the Dual-source Driver for SiC BJT ......... 62 Haihong Qin, Nanjing University of Aeronautics and Astronautics, China Qing Liu, Nanjing University of Aeronautics and Astronautics, China Ying Zhang, Nanjing University of Aeronautics and Astronautics, China Junyue Yu, Nanjing University of Aeronautics and Astronautics, China Dan Wang, Nanjing University of Aeronautics and Astronautics, China Chaohui Zhao, Shanghai Electric Machinery College, China Evaluating Self-commutated Reverse Conduction Characterization of Enhancement- Mode GaN HEMT for Application .............................................................................................. 68 Haihong Qin, Nanjing University of Aeronautics and Astronautics, China Ying Zhang, Nanjing University of Aeronautics and Astronautics, China Dan Wang, Nanjing University of Aeronautics and Astronautics, China Dafeng Fu, Nanjing University of Aeronautics and Astronautics, China Chaohui Zhao, Shanghai DianJi University, China Experimental Study of the Factors Affecting on SiC MOSFET Switching Performance ....... 74
Junji Ke, North China Electric Power University, China Peng Sun, North China Electric Power University, China Xiwei Zhang, North China Electric Power University, China Zhibin Zhao, North China Electric Power University, China Xiang Cui, North China Electric Power University, China
Advanced Cooling Solutions of High Power Automotive Module .......................................... 82 Fang Qi, Dynex Semiconductor, UK Yangang Wang, Dynex Semiconductor, UK Christiana Bob-Manuel, Dynex Semiconductor, UK Helong Li, Dynex Semiconductor, UK Steve Jones, Dynex Semiconductor, UK Bo Li, University of Nottingham, UK Yiyi Chen, University of Nottingham, UK Yuying Yan, University of Nottingham, UK
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Advanced IGBT and Packaging Technologies for Next Generation High Power Applications ............................................................................................................................... 85 Evgeny Tsyplakov, ABB Switzerland, Switzerland Franc Dugal, ABB Switzerland, Switzerland Andreas Baschnagel, ABB Switzerland, Switzerland Munaf Rahimo, ABB Switzerland, Switzerland Arnost Kopta, ABB Switzerland, Switzerland Makan Chen, ABB Switzerland, Switzerland Chiara Corvasce, ABB Switzerland, Switzerland Maxi Andenna, ABB Switzerland, Switzerland Fabian Fischer, ABB Switzerland, Switzerland Samuel Hartmann, ABB Switzerland, Switzerland Ag paste and application in power devices ............................................................................. 94 Jinting Jiu, Senju Metal Industry / Osaka University, Japan Tetsu Takemasa, Senju Metal Industry, Japan Minoru Ueshima, Senju Metal Industry, Japan Katsuaki Suganuma, Osaka University, Japan Advanced Power Semiconductors I DIPIPMTM for Automotive Application ....................................................................................... 99 Yazhe Wang, Mitsubishi Electric Corporation Power Device Works, Japan Upgrading of output power by newly developed 7th generation IGBT and package technologies ............................................................................................................................. 103 K. Yoshida, Fuji Electric, Japan S. Yoshiwatari, Fuji Electric, Japan M. Sawada, Y.Onozawa, Fuji Electric, Japan M. Isozaki, Fuji Electric, Japan S. Okita, Fuji Electric, Japan J. Li, Fuji Electric, China S. Chen, Fuji Electric, China O. Ikawa, Fuji Electric, Japan IGBT5 based power module for high efficient PFC and inverter applications ..................... 109 Wu Ding, Vincotech, China Performance Evaluation of Split NPC 3L Modules for 1500 VDC Central Solar Inverter up to 1.5 MW ............................................................................................................................. 112 Wei Jing, SEMIKRON Electronics, China Ingo Rabl, SEMIKRON Elektronik, Germany Peter Beckedahl, SEMIKRON Elektronik, Germany Norbert Pluschke, SEMIKRON, China 94 mm Reverse-Conducting IGCT for High Power and Low Losses Applications .............. 118 Tobias Wikström, ABB Switzerland, Switzerland Maria Alexandrova, ABB Switzerland, Switzerland Vasilis Kappatos, ABB Switzerland, Switzerland Christian Winter, ABB Switzerland, Switzerland Evgeny Tsyplakov, ABB Switzerland, Switzerland Madhan Mohan, ABB Switzerland, Switzerland Makan Chen, ABB Switzerland, Switzerland
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Automotive Power Electronics Modularized Equalization Circuit Based on DC-DC Chopper for Series-Connected Lithium-Ion Battery packs ....................................................................................................... 124 Yewen WEI, China Three Gorges University, China Yingzhi LI, China Three Gorges University, China Bin Cao, China Three Gorges University, China Shuailong DAI, China Three Gorges University, China A 500Arms 48 V power stage of BSG inverter with TO-Leadless MOSFET for Mild HEV ... 130 Rui Rong, Infineon Integrated Circuit, China RenBo Wang, Infineon Technologies, China 700 kVA/L power density IGBT module for xEV power train ................................................. 137 Akihiro Osawa, Fuji Electric, Japan Keiichi Higuchi, Fuji Electric, Japan Akio Kitamura, Fuji Electric, Japan Daisuke Inoue, Fuji Electric, Japan Yoshikazu Takamiya, Fuji Electric, Japan Souichi Yoshida, Fuji Electric, Japan Hiromichi Gohara, Fuji Electric, Japan Masahito Otsuki, Fuji Electric, Japan A Double-Sided Cooling Package Design with Pinfin ........................................................... 144
Puqi Ning, University of Chinese Academy of Sciences, China, Xuhui Wen, Collaborative Innovation Center of Electric Vehicles in Beijing, China
Enhanced Power Electronics System for High-Performance Testing of Motor Control Units in a Power HIL Environment .......................................................................................... 151 Gerrit Meyer, dSPACE, Germany Advanced Power Semiconductors II New Concept Package with 1st Generation Trench Gate SiC MOSFETs ............................. 159 Yoshinori Iwasaki, Fuji Electric, Japan Mikiya Chounabayashi, Fuji Electric, Japan Masayoshi Nakazawa, Fuji Electric, Japan Susumu Iwamoto, Fuji Electric, Japan Yasuhiko Oonishi, Fuji Electric, Japan Motohito Hori, Fuji Electric, Japan Hideaki Kakiki, Fuji Electric, Japan Osamu Ikawa, Fuji Electric, Japan Jun Li, Fuji Electric, China A novel high thermal performance insulated package takes power integration to the next level ................................................................................................................................... 166 Omar Harmon, Infineon Technologies, Austria Fabio Brucchi, Infineon Technologies, Italy Christian Kasztelan, Infineon Technologies, Germany Philipp Seng, Infineon Technologies, Germany
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How to apply the better performance of SiC modules .......................................................... 174 Xiankui Ma, Hefei University of Technology – Mitsubishi Electric Joint Laboratory, China Jianfei Li, Sineng Electric, Wuxi, China Gaosheng Song, Hefei University of Technology – Mitsubishi Electric Joint Laboratory, China Xing Zhang, Hefei University of Technology – Mitsubishi Electric Joint Laboratory, China Comparison of 6.78 MHz Amplifier Topologies for 33 W, Highly Resonant Wireless Power Transfer ......................................................................................................................... 179 Michael de Rooij, Efficient Power Conversion, U.S.A Yuanzhe Zhang, Efficient Power Conversion, U.S.A Characteristics and Switching Patterns of Si/SiC Hybrid Switch ......................................... 186
Haihong Qin, Nanjing University of Aeronautics and Astronautics, China Dan Wang, Nanjing University of Aeronautics and Astronautics, China Ying Zhang, Nanjing University of Aeronautics and Astronautics, China Dafeng Fu, Nanjing University of Aeronautics and Astronautics, China Chaohui Zhao, Shanghai DianJi University, China
Keynote The Characteristics of Advanced Power Electronics Devices for High Performance Power Converters .................................................................................................................... 192 Xiangning He, Zhejiang University, China Sideng Hu, Zhejiang University, China Poster Session Contactless Rotating Power Transfer System with Vertical Maglev Rotary Inductive Coupled Structure .................................................................................................................... 193
Jia-You Lee, National Cheng Kung University, Taiwan Chong-Yu Chen, National Cheng Kung University, Taiwan Yu-Min Sun, National Cheng Kung University, Taiwan Jeng-Hung Chen, National Cheng Kung University, Taiwan
RC-IGBT Based Transfer Molded IPM for Home Appliance Application .............................. 201 Hongguang Huang, Mitsubishi Electric & Electronics, China, Ming Shang, Power Device Works, Mitsubishi Electric, Japan Xiaoling Wang, Mitsubishi Electric & Electronics, China Hongtao He, Mitsubishi Electric & Electronics, China A Genetic Algorithm High Power Density Converter System Packing Method ................... 205 Puqi Ning, University of Chinese Academy of Sciences, China Xuhui Wen, Collaborative Innovation Center of Electric Vehicles in Beijing, China Analysis of power supply from high-voltage side for electronic Current Transformer ...... 210 Yi Tian, Xi’an Polytechnic University & Xidian University, China Xinbo Huang, Xi’an Polytechnic University, China Wenchao Tian, Xidian University, China Xiang Wang, Xi’an Polytechnic University, China
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A Large Input Voltage Range 1 MHz Full Converter with 95 % Peak Efficiency for Aircraft Applications ................................................................................................................ 216 Nicolas Quentin, University of Lyon/Ampere/Safran Group, France Remi Perrin, INSA Lyon/Ampere, France Christian Martin, University of Lyon/Ampere, France Charles Joubert, University of Lyon/Ampere, France Louis Grimaud, Safran Group, France
An 820 A 750 V Compact IGBT Module with New Chip Technology for Automotive Inverter Application ................................................................................................................. 223 Rui Rong, Infineon Integrated Circuit, China YaoHua He, Infineon Technologies, China
Extra-compact 650 V / 600 A IGBT Power Module (PM) for EV Inverter Application ........... 228 Hui Han, Mitsubishi Electric & Electronics, China Gaosheng Song, Mitsubishi Electric & Electronics, China Hongtao He, Mitsubishi Electric & Electronics, China
Research on Full-Bridge Static Compensator with Small-Capacitor Equipped and Its Application ............................................................................................................................... 229 Yewen Wei, China Three Gorges University, China Bin Cao, China Three Gorges University, China Yingzhi Li, China Three Gorges University, China Shuailong Dai, China Three Gorges University, China
System power analytic management 220 V AC with cloud Computing Services applying internet of things technology .................................................................................. 235 Samuel Enrique Muñoz Cucho, University National San Luis Gonzaga de Ica, Ica Avenue los Maestros, Perú
A Novel Droop Control of Rectifier Parallel System for Constant DC Bus Voltage ............. 241 Wenshan Li, University of Chinese Academy of Science, China Jian Zhang, University of Chinese Academy of Science, China Xuhui Wen, Chinese Academy of Sciences and Collaborative Innovation Center of Electric Vehicles in Beijing, China
A Proposal of Control Method for Regulating Capacitor Voltages of Neutral Point Clamped Modular Multilevel Converter .................................................................................. 246 Ryuta Hasegawa, Toshiba, Japan Shota Tashiro, Toshiba, Japan Daichi Suzuki, Toshiba, Japan
DC-link Impedance Model of Voltage Source Converter ....................................................... 252 Xue Danhong, Xi'an Jiaotong University, China Liu Jinjun, Xi'an Jiaotong University, China Liu Teng, Xi'an Jiaotong University, China
High Power Compact Automotive IGBT Module with Planar Packaging Technology ......... 255 Yangang Wang, Dynex Semiconductor, United Kingdom Yun Li, Dynex Semiconductor, United Kingdom Yibo Wu, CRRC Times Electric, China Xiaoping Dai, Dynex Semiconductor, United Kingdom Steve Jones, Dynex Semiconductor, United Kingdom Guoyou Liu, CRRC Times Electric, China
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Renewable Energy and Smart Grids Implementation of Super Real-time Simulation for PV System ............................................ 260
Meiqin Mao, Hefei University of Technology, China Xing Zhang, Hefei University of Technology, China Yong Ding, Hefei University of Technology, China
Liuchen Chang, University of New Brunswick Fredericton, Canada Hanjie Shi, Hefei University of Technology, China, Jing Ma, State Grid Anhui Economic Research Institute, China Jiayin Xu, State Grid Anhui Economic Research Institute, China A New High Power Solar Inverter Topology with Reduced DC Potential for Enhanced Reliability .................................................................................................................................. 267
K. Ramachandra Sekhar, Hitachi, India Aalok Bhatt, Hitachi Hirel Power Electronics, India Tetsuya Kawashima, Hitachi, India
Principle of Power Electronic Converter ................................................................................ 273 Jingwen Xie, Schneider Electric, Shanghai, China, Yangguang Yan, Nanjing University of Aeronautics & Astronautics, Nanjing, China Semiconductor Solutions to Support High-Power Battery Charging Systems in Electric Mobility Scenarios ..................................................................................................... 282 Martin Schulz, Infineon Technologies, Germany Frequency-Dependent Droop Control for Distributed Generation in Microgrids ................ 286 Yang Qi, Nanyang Technological University, Singapore Jingyang Fang, Nanyang Technological University, Singapore Yi Tang, Nanyang Technological University, Singapore Power Conversion Optimization Design of Parameters for a Novel High Gain CSI with Improved SVPWM ..... 293 Meiqin Mao, Hefei University of Technology, China Yandong Li, Hefei University of Technology, China Wenhan Wu, Hefei University of Technology, China Liuchen Chang, University of New Brunswick Fredericton, Canada Jing Ma, State Grid Anhui Economic Research Institute, China Jiayin Xu, State Grid Anhui Economic Research Institute, China High-efficiency Converter Technologies for Advanced Air Conditioner .............................. 300 Akihiro Ishigaya, Toshiba Carrier, Japan Naohito Kamiya, Toshiba Carrier, Japan Yohei Kubota, Toshiba Carrier, Japan Masayuki Yoshimura, Toshiba Carrier, Japan
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Multi-Objective Control Strategy for Residential DC Distribution System Based on PIMPC ....................................................................................................................................... 306 Meiqin Mao, Hefei University of Technology, China Hanjie Shi, Hefei University of Technology, China Yong Ding, Hefei University of Technology, China Liuchen Chang, Hefei University of Technology, China Yu Chen, State Grid Anhui Economic Research Institute, China Jing Ma, State Grid Anhui Economic Research Institute, China 6-in-1 Silicon Carbide (SiC) MOSFET Power Module for EV/HEV Inverters ......................... 314 Fumio Wada, Mitsubishi Electric Corp, Japan Noboru Miyamoto, Mitsubishi Electric Corp, Japan Kentaro Yoshida, Mitsubishi Electric Corp, Japan Shinsuke Godo, Mitsubishi Electric Corp, Japan A New Type Single-Stage Three-Phase Inverter with Star-Buck Converter Structure ........ 318 Jia-You Lee, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan Jheng-Hung Chen, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
326
Authors Index PCIM Asia 2017
Alexandrova Maria ABB Switzerland CH
Andenna Maxi ABB Switzerland CH
Baschnagel Andreas ABB Switzerland CH
Bhatt Aalok Hitachi Hirel power electronics IND
Bin Cao China Three Gorges University CN
Bob-Manuel Christiana Dynex Semiconductor UK
Brucchi Fabio Infineon Technologies ITA
Cao Lin CRRC Times Electric CN
CAO Bin China Three Gorges University CN
Chandra Ambrish École de Technologie Supérieure (ETS) CA
Chang Liuchen University of New Brunswick Fredericton / Hefei University of Technology
CA
Chen Yu State Grid Anhui Economic Research Institute CN
Chen Song Fuji Electric CN
Chen Makan ABB Switzerland CH
Chen Chong-Yu National Cheng Kung University TWN
Chen Jeng-Hung National Cheng Kung University TWN
Chen Yiyi University of Nottingham UK
Chounabayashi Mikiya Fuji Electric JP
Chiang Weishih Infineon Technologies CN
Corvasce Chiara ABB Switzerland CH
Cui Xiang North China Electric Power University CN
Dai Shuailong China Three Gorges University CN
Dai Xiaoping Dynex Semiconductor UK
327
de Rooij Michael Efficient Power Conversion US
Ding Yong Hefei University of Technology CN
Dugal Franc ABB Switzerland CH
Evgeny Tsyplakov ABB Switzerland CH
Fang Jingyang Nanyang Technological University SG
Fersterra Fabian Fraunhofer IISB GER
Fischer Fabian ABB Switzerland CH
Fu Dafeng Nanjing University of Aeronautics and Astronautics CN
Fujihira Tatsuhiko Fuji Electric JP
Fujishima Naoto Fuji Electric JP
Godo Shinsuke Mitsubishi Electric JP
Gohara Hiromichi Fuji Electric JP
Gosses Kilian Fraunhofer IISB GER
Grimaud Louis Safran Group FRA
Haiyang Qin Shanghai Maritime University CN
Han Hui Mitsubishi Electric & Electronic CN
Han Yunchao Friedrich-Alexander-University Erlangen-Nuremberg
GER
Harmon Omar Infineon Technologies AU
Hartmann Samuel ABB Switzerland CH
Hasegawa Ryuta Toshiba JP
He YaoHua Infineon Technologies CN
He Hongtao Mitsubishi Electric & Electronic CN
He Hongtao Mitsubishi Electric & Electronic CN
He Xiangning Zhejiang University CN
Higuchi Keiichi Fuji Electric JP
328
Hori Motohito Fuji Electric JP
Hu Bo Mitsubishi Electric & Electronic CN
Hu Sideng Zhejiang University CN
Huang Hongguang Mitsubishi Electric & Electronic CN
Huang Xinbo Xi’an Polytechnic University CN
Ikawa Osamu Fuji Electric JP
Inoue Daisuke Fuji Electric JP
Ishigaya Akihiro Toshiba Carrier JP
Isozaki M. Fuji Electric JP
Iwamoto Susumu Fuji Electric JP
Iwasaki Yoshinori Fuji Electric JP
Jiu Jinting Senju Metal Industry / Osaka University JP
Jones Steve Dynex Semiconductor UK
Joubert Charles University of Lyon/Ampere FRA
Kai Yu CRRC Times Electric CN
Kaiser Julian Fraunhofer IISB GER
Kakiki Hideaki Fuji Electric JP
Kamiya Naohito Toshiba Carrier JP
Kappatos Vasilis ABB Switzerland CH
Kasztelan Christian Infineon Technologies GER
Kawashima Tetsuya Hitachi India Pvt. Ltd. IND
Ke Junji North China Electric Power University CN
Kikuchi Masahiro Fuji Electric JP
Kimura Hiroshi Fuji Electric JP
Kitamura Akio Fuji Electric JP
Kopta Arnost ABB Switzerland CH
Kubota Yohei Toshiba Carrier JP
329
Lee Jia-You National Cheng Kung University TWN
Li Yandong Hefei University of Technology CN
Li Yingzhi China Three Gorges University CN
Li Jun Fuji Electric CN
Li Jianfei Sineng Electric CN
Li Wenshan University of Chinese Academy of Science CN
Li Bo University of Nottingham UK
Li Helong Dynex Semiconductor UK
Li Yun Dynex Semiconductor UK
Li Yingzhi China Three Gorges University CN
Liu Guoyou CRRC Times Electric CN
Liu Junjun Xi'an Jiaotong University CN
Liu Teng Xi'an Jiaotong University CN
Liu Qing Nanjing University of Aeronautics and Astronautics CN
Ma Jing State Grid Anhui Economic Research Institute CN
Ma Xiankui Mitsubishi Electric & Electronic / Hefei University of Technology - Mitsubishi Electric Joint Laboratory
CN
Mao Meiqin Hefei University of Technology CN
Martin Christian University of Lyon/Ampere FRA
März Martin Fraunhofer IISB GER
Matsumoto Yasushi Fuji Electric JP
Meyer Gerrit dSPACE GER
Miyamoto Noboru Mitsubishi Electric JP
Mohan Madhan Semiconductors CH
Nakazawa Masayoshi Fuji Electric JP
Ning Puqi University of Chinese Academy of Sciences CN
Nishida Nobuya Mitsubishi Electric JP
330
Okita S. Fuji Electric JP
Oonishi Yasuhiko Fuji Electric JP
Osawa Akihiro Fuji Electric JP
Otsuki Masahito Fuji Electric JP
Ott Leopold Fraunhofer IISB GER
Perrin Remi INSA Lyon/Ampere FRA
Peter Beckedahl SEMIKRON GER
Pluschke Norbert SEMIKRON CN
Qi Yang Nanyang Technological University SG
Qi Fang Dynex Semiconductor UK
Qin Haihong Nanjing University of Aeronautics and Astronautics CN
Quentin Nicolas University of Lyon/Ampere/Safran Group FRA
Rabl Ingo SEMIKRON GER
Rahimo Munaf ABB Switzerland CH
Rong Rui Infineon Integrated Circuit CN
Samuel Enrique Muñoz Cucho University National San Luis Gonzaga de Ica Ica Avenue los maestros
PE
Sawada M. Fuji Electric JP
Schulz Matthias Fraunhofer IISB GER
Schulz Martin Infineon Technologies GER
Sekhar K. Ramachandra
Hitachi India Pvt. Ltd. IND
Seng Philipp Infineon Technologies GER
Shang Ming Mitsubishi Electric JP
Shi Hanjie Hefei University of Technology CN
Sin Howard Panasonic Industrial Devices Semiconductor Asia SG
331
Song Gaosheng Mitsubishi Electric & Electronic / Hefei University of Technology – Mitsubishi Electric Joint Laboratory
CN
Suganuma Katsuaki Osaka University JP
Sun Peng North China Electric Power University CN
Sun Yu-Min National Cheng Kung University TWN
Suzuki Daichi Toshiba JP
Takahashi Hidenori Fuji Electric JP
Takamiya Yoshikazu Fuji Electric JP
Takemasa Tetsu Senju Metal Industry JP
Tang Yi Nanyang Technological University SG
Tashiro Shota Toshiba JP
Tian Yi Xi’an Polytechnic University & Xidian University CN
Tian Wenchao Xidian University CN
Tobias Wikström ABB Switzerland CH
Tsyplakov Evgeny ABB Switzerland CH
Ueshima Minoru Senju Metal Industry JP
Wada Fumio Mitsubishi Electric JP
WANG Renbo Infineon Technologies CN
Wang Xiaoling Mitsubishi Electric & Electronic CN
Wang Dan Nanjing University of Aeronautics and Astronautics CN
Wang Xiang Xi’an Polytechnic University CN
Wang Yazhe Mitsubishi Electric JP
Wang Yangang Dynex Semiconductor UK
Watanabe Hiroshi Mitsubishi Electric JP
WEI Yewen China Three Gorges University CN
Wei Jing SEMIKRON CN
Wei Yewen China Three Gorges University CN
332
Wen Xuhui Chinese Academy of Sciences and Collaborative Innovation Center of Electric Vehicles in Beijing
CN
Winter Christian ABB Switzerland CH
Wu Wenhan Hefei University of Technology CN
Wu Yibo CRRC Times Electric CN
Wu Ding Vincotech CN
Wunder Bernd Fraunhofer IISB GER
Xie Longfei CRRC Times Electric CN
Xie Jingwen Schneider Electric CN
Xu Jiayin State Grid Anhui Economic Research Institute CN
Xu Jiayin State Grid Anhui Economic Research Institute CN
Xue Danhong Xi'an Jiaotong University CN
Yan Yuying University of Nottingham UK
Yan Yangguang Nanjing University of Aeronautics & Astronautics CN
Ye Na CRRC Times Electric CN
Yoshida Kentaro Mitsubishi Electric JP
Yoshida K. Fuji Electric JP
Yoshida Souichi Fuji Electric JP
Yoshimura Masayuki Toshiba Carrier JP
Yoshiwatari S. Fuji Electric JP
Yu Junyue Nanjing University of Aeronautics and Astronautics CN
Zhang Xing Hefei University of Technology CN
Zhang Yuancheng Mitsubishi Electric & Electronic CN
Zhang Ying Nanjing University of Aeronautics and Astronautics CN
Zhang Xiwei North China Electric Power University CN
Zhang Jian University of Chinese Academy of Science CN
Zhang Jie Xi’an Polytechnic University CN
333
Zhang Yuanzhe Efficient Power Conversion US
Zhao Zhibin North China Electric Power University CN
Zhao Chaohui Shanghai DianJi University CN
Zhao Zhenbo Infineon Technologies CN