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1/21 September 2004 VN772K-E QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS Rev. 1 Table 1. General Features Note: (*) Total resistance of one side in bridge configuration Note: (**) Typical current limitation value SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION VERY LOW STAND-BY POWER DISSIPATION SHORT CIRCUIT PROTECTED DOUBLE STATUS FLAG DIAGNOSTIC (OPEN DRAIN) INTEGRATED CLAMPING CIRCUITS UNDERVOLTAGE PROTECTION ESD PROTECTION IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION The VN772K-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPowerM0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. Figure 1. Package The high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower™ technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. Table 2. Order Codes Type R DS(on) I OUT V CC VN772K-E 120m(*) 9A (**) 36V SO-28 Package Tube Tape and Reel SO-28 VN772K-E VN772KTR-E

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1/21September 2004

VN772K-EQUAD SMART POWER SOLID STATE RELAY

FOR COMPLETE H BRIDGE CONFIGURATIONS

Rev. 1

Table 1. General Features

Note: (*) Total resistance of one side in bridge configurationNote: (**) Typical current limitation value

SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION VERY LOW STAND-BY POWER DISSIPATION SHORT CIRCUIT PROTECTED DOUBLE STATUS FLAG DIAGNOSTIC (OPEN

DRAIN) INTEGRATED CLAMPING CIRCUITS UNDERVOLTAGE PROTECTION

ESD PROTECTION IN COMPLIANCE WITH THE 2002/95/EC

EUROPEAN DIRECTIVE

DESCRIPTIONThe VN772K-E is a device formed by threemonolithic chips housed in a standard SO-28package: a double high side and two low sideswitches. Both the double high side and low sideswitches are made using |STMicroelectronicsVIPower™ M0-3 Technology. This device issuitable to drive a DC motor in a bridgeconfiguration as well as to be used as a quadswitch for any low voltage application.

Figure 1. Package

The high side switches have built-in thermalshutdown to protect the chips fromovertemperature and current limiter blocks toprotect the device from short circuit. Status outputis provided to indicate open load in off and on stateand overtemperature. The low side switches aretwo OMNIFET II types (fully autoprotected PowerMOSFET in VIPower™ technology). They havebuilt-in thermal shutdown, linear current limitationand overvoltage clamping. Fault feedback forthermal intervention can be detected bymonitoring the voltage at the input pin.

Table 2. Order Codes

Type RDS(on) IOUT VCC

VN772K-E 120mΩ (*) 9A (**) 36V

SO-28

Package Tube Tape and Reel

SO-28 VN772K-E VN772KTR-E

VN772K-E

2/21

Figure 2. Block Diagram

OVERTEMP. 1

Vcc

GND

INPUT1SOURCE1

OVERVOLTAGE

LOGIC

DRIVER 1

DIAG

Vcc

CLAMP

UNDERVOLTAGE

CLAMP 1

OPENLOAD ON 1

CURRENT LIMITER 1

OPENLOAD OFF 1

SOURCE2DRIVER 2

CLAMP 2

OPENLOAD ON 2

OPENLOAD OFF 2

OVERTEMP. 2

INPUT2CURRENT LIMITER 2

Overvoltage

Gate

Linear

DRAIN3

SOURCE3

Clamp

CurrentLimiter

Control

OverTemperature

INPUT3

Overvoltage

Gate

Linear

DRAIN4

SOURCE4

Clamp

CurrentLimiter

Control

OverTemperature

INPUT4

3/21

VN772K-E

Table 3. Pin Function

Figure 3. Configuration Diagram (Top View)

Table 4. Thermal Data

No NAME FUNCTION1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch)

2 INPUT 3 Input of Switch 3 (low-side switch)4, 11 N.C. Not Connected

5, 10, 19, 24 VCC Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage6 GND Ground of Switches 1 and 2 (high-side switches) 7 INPUT 1 Input of Switch 1 (high-side switches)8 DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)9 INPUT 2 Input of Switch 2 (high-side switch)

12, 14, 15, 18 DRAIN 4 Drain of switch 4 (low-side switch)13 INPUT 4 Input of Switch 4 (low-side switch)

16, 17 SOURCE 4 Source of Switch 4 (low-side switch)20, 21 SOURCE 2 Source of Switch 2 (high-side switch)22, 23 SOURCE 1 Source of Switch 1 (high-side switch)26, 27 SOURCE 3 Source of Switch 3 (low-side switch)

Symbol Parameter Value UnitRthj-case Thermal Resistance Junction-case (High-side switch) MAX 20 °C/WRthj-case Thermal Resistance Junction-case (Low-side switch) MAX 20 °C/WRthj-amb Thermal Resistance Junction-ambient MAX 60 °C/W

VN772K-E

4/21

ABSOLUTE MAXIMUM RATINGS

Table 5. Dual High Side Switch

Table 6. Low Side Switch

Symbol Parameter Value UnitVCC DC Supply Voltage 41 V

- VCC Reverse DC Supply Voltage - 0.3 V- IGND DC Reverse Ground Pin Current - 200 mAIOUT DC Output Current Internally Limited A

- IOUT Reverse DC Output Current - 6 AIIN DC Input Current +/- 10 mA

ISTAT DC Status Current +/- 10 mA

VESD

Electrostatic Discharge (Human Body Model: R=1.5KΩ;C=100pF)

- INPUT

- STATUS

- OUTPUT

- VCC

4000

4000

5000

5000

V

V

V

V

Ptot Power Dissipation Tc=25°C 6 WTj Junction Operating Temperature Internally Limited °CTc Case Operating Temperature - 40 to 150 °C

Tstg Storage Temperature - 55 to 150 °C

Symbol Parameter Value UnitVDS Drain-source Voltage (VIN=0V) Internally Clamped VVIN Input Voltage Internally Clamped V

IIN Input Current +/-20 mARIN MIN Minimum Input Series Impedance 150 Ω

ID Drain Current Internally Limited AIR Reverse DC Output Current -10.5 A

VESD1 Electrostatic Discharge (R=1.5KΩ, C=100pF) 4000 V

VESD2Electrostatic Discharge on output pin only

(R=330Ω, C=150pF)16500 V

Ptot Power Dissipation (TC=25°C) 6 WTj Operating Junction Temperature Internally limited °C

5/21

VN772K-E

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH

(8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified) (Per each channel)

Table 7. Power Outputs

Note: (1) Per device.

Table 8. Switching (VCC=13V)

Table 9. Logic Input

Table 10. Status Pin

Symbol Parameter Test Conditions Min Typ Max UnitVCC (1) Operating Supply Voltage 5.5 13 36 VVUSD (1) Undervoltage Shut-down 3 4 5.5 VVOV (1) Overvoltage Shut-down 36 V

RDS(on) On State ResistanceIOUT=2A; Tj=25°C

IOUT=2A; VCC>8V

60

120

mΩmΩ

IS (1) Supply Current

Off State; VCC=13V; VIN=VOUT=0V

Off State; VCC=13V; Tj =25°C; VIN=VOUT=0V

On State; VCC=13V

12

12

5

40

25

7

µA

µA

mA

IL(off1) Off State Output Current VIN=VOUT=0V; VCC=36V; Tj=125°C 0 50 µAIL(off2) Off State Output Current VIN=0V; VOUT=3.5V -75 0 µAIL(off3) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =125°C 5 µAIL(off4) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

td(on) Turn-on Delay Time RL=6.5Ω from VIN rising edge to VOUT=1.3V

30 µs

td(off) Turn-off Delay Time RL=6.5Ω from VIN falling edge to VOUT=11.7V

30 µs

dVOUT/dt(on)

Turn-on Voltage SlopeRL=6.5Ω from VOUT=1.3V to VOUT=10.4V

See relative diagram

V/µs

dVOUT/dt(off)

Turn-off Voltage SlopeRL=6.5Ω from VOUT=11.7V to VOUT=1.3V

See relative diagram

V/µs

Symbol Parameter Test Conditions Min Typ Max UnitVIL Input Low Level 1.25 VIIL Low Level Input Current VIN = 1.25V 1 µAVIH Input High Level 3.25 VIIH High Level Input Current VIN = 3.25V 10 µA

VI(hyst) Input Hysteresis Voltage 0.5 V

VICL Input Clamp VoltageIIN = 1mA

IIN = -1mA

6 6.8

-0.7

8 V

V

Symbol Parameter Test Conditions Min Typ Max UnitVSTAT Status Low Output Voltage ISTAT= 1.6 mA 0.5 VILSTAT Status Leakage Current Normal Operation; VSTAT= 5V 10 µA

CSTAT Status Pin Input Capacitance

Normal Operation; VSTAT= 5V 100 pF

VSCL Status Clamp VoltageISTAT= 1mA

ISTAT= - 1mA

6 6.8

-0.7

8 V

V

VN772K-E

6/21

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)

Table 11. Protections

Table 12. Openload Detection

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES

(-40°C < Tj < 150°C, unless otherwise specified)

Table 13. Off

Table 14. On

Symbol Parameter Test Conditions Min Typ Max UnitTTSD Shut-down Temperature 150 175 200 °CTR Reset Temperature 135 °C

Thyst Thermal Hysteresis 7 15 °C

tSDL Status Delay in Overload Conditions

Tj>TTSD 20 µs

Ilim Current limitation Tj=125°C5.5V<VCC<36V

6

8.5

9 15

15

15

A

A

A

Vdemag Turn-off Output Clamp

VoltageIOUT=2A; L= 6mH VCC-41 VCC-48 VCC-55 V

Symbol Parameter Test Conditions Min Typ Max Unit

IOL Openload ON State

Detection ThresholdVIN=5V 50 100 200 mA

tDOL(on) Openload ON State

Detection DelayIOUT=0A 200 µs

VOL

Openload OFF State Voltage Detection Threshold

VIN=0V 1.5 2.5 3.5 V

TDOL(off) Openload Detection Delay at Turn Off

1000 µs

Symbol Parameter Test Conditions Min Typ Max Unit

VCLAMPDrain-source Clamp Voltage

VIN=0V; ID=3.5A 40 45 55 V

VCLTHDrain-source Clamp Threshold Voltage

VIN=0V; ID=2mA 36 V

VINTH Input Threshold Voltage VDS=VIN; ID=1mA 0.5 2.5 V

IISSSupply Current from Input Pin

VDS=0V; VIN=5V 100 150 µA

VINCLInput-Source Clamp Voltage

IIN=1mA

IIN=-1mA

6

-1.0

6.8 8

-0.3V

IDSSZero Input Voltage Drain Current (VIN=0V)

VDS=13V; VIN=0V; Tj=25°C

VDS=25V; VIN=0V

30

75µA

Symbol Parameter Test Conditions Min Typ Max Unit

RDS(on)Static Drain-source On Resistance

VIN=5V; ID=3.5A; Tj=25°C

VIN=5V; ID=3.5A

60

120mΩ

7/21

VN772K-E

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)

(Tj=25°C, unless otherwise specified)

Table 15. Dynamic

Table 16. Switching

Table 17. Source Drain Diode

Note: (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%

Table 18. Protections (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

gfs (*)Forward

TransconductanceVDD=13V; ID=3.5A 9 S

COSS Output Capacitance VDS=13V; f=1MHz; VIN=0V 220 pF

Symbol Parameter Test Conditions Min Typ Max Unittd(on) Turn-on Delay Time

VDD=15V; ID=3.5A

Vgen=5V; Rgen=RIN MIN=150Ω

100 300 nstr Rise Time 470 1500 ns

td(off) Turn-off Delay Time 500 1500 nstf Fall Time 350 1000 ns

td(on) Turn-on Delay Time VDD=15V; ID=3.5A

Vgen=5V; Rgen=2.2KΩ

0.75 2.3 µstr Rise Time 4.6 14.0 µs

td(off) Turn-off Delay Time 5.4 16.0 µs

tf Fall Time 3.6 11.0 µs

(dI/dt)on Turn-on Current SlopeVDD=15V; ID=3.5A

Vgen=5V; Rgen=RIN MIN=150Ω6.5 A/µs

Qi Total Input ChargeVDD=12V; ID=3.5A; VIN=5V

Igen=2.13mA18 nC

Symbol Parameter Test Conditions Min Typ Max UnitVSD (*) Forward On Voltage ISD=3.5A; VIN=0V 0.8 V

trr Reverse Recovery TimeISD=3.5A; dI/dt=20A/µs

VDD=30V; L=200µH

220 nsQrr Reverse Recovery Charge 0.28 µC

IRRM Reverse Recovery Current 2.5 A

Symbol Parameter Test Conditions Min Typ Max Unit

Ilim Drain Current LimitVIN=5V; VDS=13V

VIN=5V; VDS=13V; Tj=125°C6

6.5

9 12

12

A

A

tdlim Step Response Current Limit

VIN=5V; VDS=13V4.0 µs

Tjsh Overtemperature

Shutdown150 175 °C

Tjrs Overtemperature Reset 135 °CIgf Fault Sink Current VIN= 5V; VDS=13V; Tj=Tjsh 15 mA

Eas Single Pulse

Avalanche Energy

starting Tj=25°C; VDD=24V

VIN=5V; Rgen=RIN MIN=150Ω; L=24mH200 mJ

VN772K-E

8/21

DUAL HIGH-SIDE SWITCH

Figure 4. Switching Time Waveforms

Table 19. Truth Table

Figure 5.

CONDITIONS INPUT OUTPUT STATUS

Normal OperationLH

LH

HH

Current LimitationLHH

LXX

H(Tj < TTSD) H(Tj > TTSD) L

OvertemperatureLH

LL

HL

UndervoltageLH

LL

XX

Overvoltage LH

LL

HH

Output Voltage > VOLLH

HH

LH

Output Current < IOLLH

LH

HL

t

t

VOUTn

VINn

80%

10%

dVOUT/dt(on)

td(off)

90%

dVOUT/dt(off)

td(on)

VINn

VSTAT n

tDOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

VINn

VSTAT n

OVER TEMP STATUS TIMING

tSDLtSDL

IOUT < IOLVOUT> VOL

tDOL(on)

Tj > TTSD

9/21

VN772K-E

Figure 6. Typical Application Diagram

VN772K-E

10/21

Figure 7. Waveforms

OPEN LOAD without external pull-up

STATUSn

INPUTn

NORMAL OPERATION

UNDERVOLTAGE

VCC

VUSD

VUSDhyst

INPUTn

OVERVOLTAGE

VCC

STATUSn

INPUTn

STATUSn

STATUSn

INPUTn

STATUSn

INPUTn

OPEN LOAD with external pull-up

undefined

OVERTEMPERATURE

INPUTn

STATUSn

TTSDTR

Tj

OUTPUT VOLTAGEn

VCC<VOV

OUTPUT VOLTAGEn

OUTPUT VOLTAGEn

OUTPUT VOLTAGEn

OUTPUT VOLTAGEn

OUTPUT CURRENTn

VOUT>VOL

VOL

VCC>VOV

11/21

VN772K-E

Electrical Characterization For Dual High Side Switch

Figure 8. Off State Output Current

Figure 9. High Level Input Current

Figure 10. Input Low Level

Figure 11. Input Clamp Voltage

Figure 12. Input High Level

Figure 13. Input Hysteresis Voltage

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

2.5

IL(off1) (uA)

Off stateVcc=36V

Vin=Vout=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Iih (uA)

Vin=3.25V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

Vil (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

6

6.2

6.4

6.6

6.8

7

7.2

7.4

7.6

7.8

8

Vicl (V)

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

2

2.2

2.4

2.6

2.8

3

3.2

3.4

3.6

Vih (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

Vhyst (V)

VN772K-E

12/21

Electrical Characterization For Dual High Side Switch (continued)

Figure 14. Overvoltage Shutdown

Figure 15. Turn-on Voltage Slope

Figure 16. On State Resistance Vs Tcase

Figure 17. ILIM Vs Tcase

Figure 18. Turn-off Voltage Slope

Figure 19. On State Resistance Vs VCC

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

30

32

34

36

38

40

42

44

46

48

50

Vov (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

100

200

300

400

500

600

700

800

dVout/dt(on) (V/ms)

Vcc=13VRl=6.5Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

20

40

60

80

100

120

140

160

Ron (mOhm)

Iout=2AVcc=8V; 13V & 36V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

2

4

6

8

10

12

14

16

18

20

Ilim (A)

Vcc=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

200

250

300

350

400

450

500

550

600

dVout/dt(off) (V/ms)

Vcc=13VRl=6.5Ohm

5 10 15 20 25 30 35 40

Vcc (V)

0

10

20

30

40

50

60

70

80

90

100

110

120

Ron (mOhm)

Iout=5A

Tc= - 40°C

Tc=25°C

Tc=150°C

13/21

VN772K-E

Electrical Characterization For Dual High Side Switch (continued)

Figure 20. Status Leakage Current

Figure 21. Openload On State Detection Threshold

Figure 22. Status Clamp Voltage

Figure 23. Status Low Output Voltage

Figure 24. Openload Off State Voltage Detection Threshold

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.01

0.02

0.03

0.04

0.05

Ilstat (uA)

Vstat=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

50

60

70

80

90

100

110

120

130

140

150

Iol (mA)

Vcc=13VVin=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

6

6.2

6.4

6.6

6.8

7

7.2

7.4

7.6

7.8

8

Vscl (V)

Istat=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Vstat (V)

Istat=1.6mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Vol (V)

Vin=0V

VN772K-E

14/21

Electrical Characterization For Low Side Switches

Figure 25. Static Drain Source On Resistance

Figure 26. Transconductance

Figure 27. Turn On Current Slope

Figure 28. Derating Curve

Figure 29. Transfer Characteristics

Figure 30. Turn On Current Slope

0 0.25 0.5 0.75 1 1.25

Id(A)

0

50

100

150

200

250

300

350

400

450

500

Rds(on) (mOhm)

Tj=25ºC

Tj=150ºC

Tj= - 40ºC

Vin=2.5V

0 1 2 3 4 5 6 7 8

Id(A)

0

2

4

6

8

10

12

14

16

18

20

Gfs (S)

Vds=13V

Tj=25ºC

Tj=150ºC

Tj=-40ºC

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

0

1

2

3

4

5

6

7

8

di/dt(A/us)

Vin=5VVdd=15VId=3.5A

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Vin(V)

0

1

2

3

4

5

6

7

8

9

10

Idon(A)

Vds=13.5VTj=150ºC

Tj=25ºC

Tj=-40ºC

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

di/dt(A/us)

Vin=3.5VVdd=15VId=3.5A

15/21

VN772K-E

Electrical Characterization For Low Side Switches (continued)

Figure 31. Input Voltage Vs. Input Charge

Figure 32. Switching Time Resistive Load

Figure 33. Output Characteristics

Figure 34. Capacitance Variations

Figure 35. Switching Time Resistive Load

Figure 36. Step Response Current Limit

0 5 10 15 20 25

Qg(nC)

0

1

2

3

4

5

6

7

8

Vin(V)

Vds=12VId=3.5A

0 250 500 750 1000 1250 1500 1750 2000 2250 2500

Rg(ohm)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

t(us)

td(on)

tf

td(off)

trVdd=15VId=3.5AVin=5V

0 1 2 3 4 5 6 7 8 9 10 11 12 13

VDS(V)

0

1

2

3

4

5

6

7

8

9

10

11

12

ID(A)

Vin=2.5V

Vin=4V

Vin=4.5V

Vin=3V

Vin=2V

Vin=5V

0 5 10 15 20 25 30 35

Vds(V)

100

200

300

400

500

600

C(pF)

f=1MHzVin=0V

3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

Vin(V)

0

200

400

600

800

1000

1200

1400

1600

t(ns)

tf

tr

td(on)

td(off)

Vdd=15VId=3.5A

Rg=150ohm

5 10 15 20 25 30 35

Vdd(V)

3.5

4

4.5

5

5.5

6

6.5

7

Tdlim(us)

Vin=5VRg=150ohm

VN772K-E

16/21

Electrical Characterization For Low Side Switches (continued)

Figure 37. Source-Drain Diode Forward Characteristics

Figure 38. Static Drain-Source On resistance Vs. Input Voltage

Figure 39. Normalized Input Threshold Voltage Vs. Temperature

Figure 40. Static Drain-Source On Resistance Vs. Id

Figure 41. Static Drain-Source On resistance Vs. Input Voltage

Figure 42. Normalized On Resistance Vs. Temperature

0 2 4 6 8 10 12 14

Id(A)

500

550

600

650

700

750

800

850

900

950

1000

Vsd (mV)

Vin=0V

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

0

20

40

60

80

100

120

140

Rds(on) (mOhm)

Id=6A

Id=1A

Id=6AId=1A

Id=6AId=1A

Tj=25ºC

Tj=150ºC

Tj=-40ºC

-50 -25 0 25 50 75 100 125 150 175

T(ºC)

0.7

0.75

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

Vin(th)

Vds=VinId=1mA

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Id(A)

0

20

40

60

80

100

120

140

Rds(on) (mOhm)

Tj=25ºC

Tj=150ºC

Tj=-40ºC

Vin=5V

Vin=3.5V

Vin=5V

Vin=5V

Vin=3.5V

Vin=3.5V

3 3.5 4 4.5 5 5.5 6 6.5 7

Vin(V)

0

10

20

30

40

50

60

70

80

90

100

110

120

Rds(on) (mOhm)

Id=3.5A

Tj=150ºC

Tj= - 40ºC

Tj=25ºC

-50 -25 0 25 50 75 100 125 150 175

T(ºC)

0.5

0.75

1

1.25

1.5

1.75

2

2.25

Rds(on)

Vin=5VId=3.5A

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VN772K-E

Electrical Characterization For Low Side Switches (continued)

Figure 43. Turn off drain source voltage slope

Figure 44. Current Limit Vs. Junction Temperature

Figure 45. Turn off drain source voltage slope

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

0

50

100

150

200

250

300

dv/dt(v/us)

Vin=3.5VVdd=15VId=3.5A

-50 -25 0 25 50 75 100 125 150 175

Tj (ºC)

5

6

7

8

9

10

11

12

13

14

15

Ilim (A)

Vds=13VVin=5V

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

0

50

100

150

200

250

300

dv/dt(V/us)

Vin=5VVdd=15VId=3.5A

VN772K-E

18/21

Table 20. SO-28 Mechanical Data

Figure 46. SO-28 Package Dimensions

Symbolmillimeters

Min Typ Max

A 2.65a1 0.10 0.30b 0.35 0.49b1 0.23 0.32C 0.50c1 45° (typ.)D 17.7 18.1E 10.00 10.65e 1.27e3 16.51F 7.40 7.60L 0.40 1.27S 8° (max.)

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VN772K-E

Figure 47. SO-28 Tube Shipment (No Suffix)

Figure 48. Tape And Reel Shipment (Suffix “TR”)

All dimensions are in mm.

Base Q.ty 28Bulk Q.ty 700Tube length (± 0.5) 532A 3.5B 13.8C (± 0.1) 0.6

A

CB

Base Q.ty 1000Bulk Q.ty 1000A (max) 330B (min) 1.5C (± 0.2) 13F 20.2G (+ 2 / -0) 16.4N (min) 60T (max) 22.4

TAPE DIMENSIONSAccording to Electronic Industries Association(EIA) Standard 481 rev. A, Feb. 1986

All dimensions are in mm.

Tape width W 16Tape Hole Spacing P0 (± 0.1) 4Component Spacing P 12Hole Diameter D (± 0.1/-0) 1.5Hole Diameter D1 (min) 1.5

Hole Position F (± 0.05) 7.5Compartment Depth K (max) 6.5Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min

500mm minEmpty components pocketssaled with cover tape.

User direction of feed

REEL DIMENSIONS

VN772K-E

20/21

REVISION HISTORY

Date Revision Description of ChangesSep. 2004 1 - First Issue.

21/21

VN772K-E

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