quantum materials, devices, and systems at 20 years of nni

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Quantum Materials, Devices, and Systems at 20 Years of NNI Robert M Westervelt Harvard University http://CIQM.Harvard.edu STC for Integrated Quantum Materials (2013-2023) DMR-1231319 NNCI Site - CNS at Harvard (2015-2025) EECS-2025158 Nanoscale Science & Engineering Center (2001-2012) PHY-06-46094 Nanotechnology Frontiers at 20 years of NNI Proceedings, December 1, 2020, www.nseresearch.org/2020/

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Page 1: Quantum Materials, Devices, and Systems at 20 Years of NNI

Quantum Materials, Devices, and Systems at 20 Years of NNIRobert M Westervelt Harvard University

http://CIQM.Harvard.edu

STC for Integrated Quantum Materials (2013-2023) DMR-1231319NNCI Site - CNS at Harvard (2015-2025) EECS-2025158Nanoscale Science & Engineering Center (2001-2012) PHY-06-46094

Nanotechnology Frontiers at 20 years of NNIProceedings, December 1, 2020, www.nseresearch.org/2020/

Page 2: Quantum Materials, Devices, and Systems at 20 Years of NNI

1 nm

0.1 nm

0.1 eV

10 eV

energy0.001 eV

size 10 nm

10 µm

0.1 µm

1 µm

light

Quantum Science & Technology

The picture can't be displayed.

22 nm CMOS

quantum electronics & photonics with atomic-scale devices

electrons

T = 300 K

atomic NV center

vdW hetero-

structures

atomic layer graphene

color center diamond

diamond photonics

2

Page 3: Quantum Materials, Devices, and Systems at 20 Years of NNI

New Particles in Quantum Materialselectrons & photons | Bloch waves in solids | new quantum particles

vacuum

electron photon

solidsphononslower photon

–e & h with m*

quantum materials

e & h, massless no energy gap

graphene

topological edge states for B = 0

topological insulators

300 Kqubit

diamond NV centers

atom

3

Page 4: Quantum Materials, Devices, and Systems at 20 Years of NNI

STC for Integrated Quantum MaterialsHarvard, Howard, MIT, Museum of Science, Boston

Vision:Create atomic-scale devices and systems from quantum

materials for quantum sensors, quantum networks, and quantum computers.

Quantum MaterialsAtomic Layers: Graphene, BN, MoS2 – atomic scale devices Topological Insulators – topologically protected data channels NV Center Diamond – 1 atom memory sites, quantum sensors

Page 5: Quantum Materials, Devices, and Systems at 20 Years of NNI

Materials & Device Innovation Cycle

Growth & Processing

Atomic Modeling & Understanding

Device Fabrication &

Characterization

JEOL HR STEM

CNSImaging

MBE

UHV tr

MBE & CVDMaterialsGrowth

Experimental Test DataTheory

5

Page 6: Quantum Materials, Devices, and Systems at 20 Years of NNI

CIQM Research Areas

Quantum Networks with Solid State Quantum Emitters – Marko Loncar

Topologically Protected Qubits Amir Yacoby & Pablo Jarillo-Herrero

Novel vdW Heterostructures Philip Kim

twisted graphene bilayer

Moire pattern

New Topological Crystals Joseph Checkelsky

Page 7: Quantum Materials, Devices, and Systems at 20 Years of NNI

Superconductor & Mott Insulator - Magic Angle Twisted Bilayer

Y. Cao et al. Nature 556, 43 (2018); Nature 556, 80 (2018).

–0.2 0.2 0 –0.2

–40

0.2

–20

0

20

40

kx (nm–1)yk (nm–1)

Ener

gy,

E(m

eV)

Freestanding graphene (×1,000)

0 = 1.05°

EF

–1 –2DOS (eV nm )100

–100

–5

0

5

10

0.1

0.2

0.3

0.4

0.5

0.6

–1.4 –1.2

1

2

3

Carrier density, n (1012 cm–2)Carrier density, n (1012 cm–2)

Tem

pera

ture

, T(K

)

Tem

pera

ture

, T(K

)8 4 0b

Rxx (kQ) Rxx (kQ)

Mott

Superconductor

–1.8 –1.6

Superconductor

Superconductor

–1.8 –1.6 –1.4 –1.2 –1.0 –0.8

Metal Metal

010 5c

Mott MetalMetal

M1, = 1.16° M2, = 1.05°

Twisted single layer graphene (tBG)

Magic angle condition

Mott Insulator &

Superconductor

Bistritzer & MacDonald, PNAS 108, 12233 (2011).

magic-angle twisted bilayer

graphene

a

Pablo Jarillo-Herrero

Tim Kaxiras

Page 8: Quantum Materials, Devices, and Systems at 20 Years of NNI

Topology: A Mathematical Concept with use in Electronics

(1964)

Mobius Shawl Topological in Construction8

(1964)

Topology: A Mathematical Concept with use in Electronics

2Mobius Shawl Topological in Construction

Page 9: Quantum Materials, Devices, and Systems at 20 Years of NNI

Fe3Sn2 New Kagome Metal

STEM Image theory

Ye, Bell, Fu, Comin, Checkelsky et al., Nature (2018).

Fe

Sn

Kagome Bilayer

Flat Energy Band promotes correlations

Joe Checkelsky

Guo & Franz,PRB 80 113102 (2009).

Page 10: Quantum Materials, Devices, and Systems at 20 Years of NNI

Quantum Emitters for Quantum Networks

10

color center qubits in diamondMarko Loncar

quantum emitter in strained 2D sheets

qubit spin to photon

Page 11: Quantum Materials, Devices, and Systems at 20 Years of NNI

On-chip Diamond

Nanophotonics Lukin & Loncar

SEM images: (a) resonator array with (b) diamond nanobeam photonic cavities with SiV color centers (c) waveguide support (d, e) diamond tapers for > 98% fiber-coupling. (f) SiV fluorescence is collected by optical fiber. (g) Image of optical fiber taper in contact with diamond waveguide taper.[Burek et al. NatureComm. (2014)]

11

Page 12: Quantum Materials, Devices, and Systems at 20 Years of NNI

Science & Education Community

Industrial & Venture Capital

Partners

Harvard innovation lab

NewQuantum Partners

$120 round trip

College Network

PublicOutreach

IndustrialOutreach

$150 round trip

Industry

Page 13: Quantum Materials, Devices, and Systems at 20 Years of NNI

13

Crystal Virtual Reality @ Museum of Science Nanodays

Page 14: Quantum Materials, Devices, and Systems at 20 Years of NNI

American Sign Language signs for STEMplease see the website aslclear.com

Barbara Spiecker

The Learning Center for the Deaf www.tlcdeaf.org

Mandy Houghton

Page 15: Quantum Materials, Devices, and Systems at 20 Years of NNI

Quantum Computing R&D Partners

Thomas Ohki, KC Fong & team CIQM faculty members

William Oliver & team Lincoln Laboratory & MIT CIQM faculty members

Page 16: Quantum Materials, Devices, and Systems at 20 Years of NNI

NNCI Site at Harvard University (http://www.nnci.net)

NSF ECCS-2025158

Page 17: Quantum Materials, Devices, and Systems at 20 Years of NNI

Thank you!