Renesas Electronics America Inc.

Standard Products Business PromotionConsumer and Industrial Business Unit

Power Management Devices and Standard Product Group

Tad Keeley

Tetsuo SatoDirector,

AE and Business Development

Mark DefreitasManager,

Product and Tactical Marketing

Chris LeeBusiness Development and Apps Engineering Manager

Anthony O’ScierField Applications Engineer (Austin)

Jim ComstcokApplication Engineer

Yoko WatanabeProduct Marketing Manager

Jessica YamadaTactical/product

Marketing Manager

Product Promotion Goals

Expand N. American standard product promotion beyond lv-MOSFETs to be be able to better leverage existing customer and channel relationships by selling more products into existing accounts (i.e. MCU accounts)

– This is a top down directive from Akao-san and has the code name SPAT in Japan.

– But, our standard products still tend to be fairly limited in their target applications. – For example, our 30V MOSFETs primarily match

CPU/GPU application requirements, many of our MCU customers have no need for the lv MOSFETs, so other products need to be added to our promotional efforts to leverage our customer base.

– So, expanding the breadth of our promotion is essential.

Product Promotion Status

What products are available for general promotion?(Parts are price competitive, AE, Marketing, Sample support all available)

20V to 30V MOSFETs Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive) Triacs/Thyristors IGBT’s (Price competitiveness under evaluation)

What products are available for limited promotion status? Zener & Schottky Barrier Diodes for Mobile Apps Sawn Zener Diodes for LED lpSRAM & EEPROM in ‘less’ price competitive situations Small Power MOSFETs

What products have ‘restricted’ promotion status? Li+ Smart Battery IC restricted to just major NBPC OEM. (due to N. American

support limitations) PFC to just one test N. American Customer (due to N. American support

limitations) Other MSIG Devices (due to N. American support limitations) High Power MOSFETs (due to non-competitive pricing) Other Vregs (due to non-competitive pricing)

Discrete, Power, & Standard Product Support Matrix

CUSTOMER PRODUCT TACTICAL APPLICATION BUSINESS DEVMARKETING MARKETING ENGINEERING

LV Power Product Apple, Intel, West Coast Mark Defreitas Mark Defreitas Jim Comstock Tetsuo Sato

LV Power Product AMD, East Coast Mark Defreitas Mark Defreitas Chris Lee Tetsuo Sato

LV Power Product Dell Mark Defreitas Jessica Yamada A O'Scier Chris Lee

Ex- NEC LV Power Product All Yoko Watanabe Yoko Watanabe

A O'Scier (Texas)/Jim Comstock (CA)/Chris Lee (Everywhere Else) Tetsuo Sato

lpSRAM & EEPROM All Jessica Yamada Jessica Yamada Tokyo Tad Keeley

Triacs, IGBTs, Hi Pwr FETs AllMark Defreitas/Tad Keely Mark Defreitas Tetsuo Sato (Acting) Tetsuo Sato

Other Gen Purpose & MSIG All Mark Defreitas Mark Defreitas Tokyo' Tetsuo Sato

Motor Driver HGST None None Chris Lee (Acting) Tetsuo Sato

RESPONSIBILITIES PRODUCT MARKETING: Market research, channel strategies, sales training, product lifecylce management, promotions, (new product definition)TACTICAL MARKETING: Quotes, Sales support for opportunity management, SMG support for delivery issues.APPLICATION ENGINEERING: Application EngineeringBUSINESS DEV: Product Definition and development support, chipset partner support,

Discrete, Power, & Standard Product Support Matrix

IMPORTANT NOTE: For high voltage devices, like Triacs and IGBT’s, and for

certain MSIG devices (i.e. PFC) we don’t have local AE expertise, instead we rely on good communication with Japan based AE’s. For the devices defined as promotion, or limited promotion, we’ve established that we can get fast and reliable support from Japan.

Discrete, Power, & Standard Product Offline & Online AE and Sales Resources

am.renesas.com:1) eCommerce Tree is enabled for low voltage MOSFETs

• This includes purchasing (through Digikey) and Sampling function• We will activate for at least IGBT and Triac as well.

2) Virtual Power Lab• Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets.

3) Customer Presentations are available online for each product family.4) Parametric search5) Cross reference tool

RSSI1) Sales Training Presentations for each product category ( I will show one example for diodes)

www.renesas.com: (global site)1) Many application examples showing standard product usage with MCU’s. Example: Inverter

Discrete, Power, & Standard Product Offline & Online AE and Sales Resources

OFFLINE:1) Santa Clara Sample Warehouse for lvMOSFET (Contact: Jessica.yamada@renesas.com)2) JIMSIM Advanced Buck Converter Simulation Tool (Contact: jim.comstock@renesas.com)

• Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions

3) Version 1 EZ-Like pdf for promotion products• 1K pricing still under analysis to make if full EZ.

OTHER: OTHER: Tak Taoyama’s (tak.taoyama@renesas.com) has been managing the N. American Sales Promotions for

Triacs, Thyristors, and IGBT’s

An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule.

How have we won power device business?

1) Provide parts with better price:performance than incumbent or competitor.• This typically requires gathering application data from customer.• Key then is to have, and to identify, the best part.

• This often requires complex analysis, but• We’ve found we can often conduct this step through coordination with Japan based AE’s.• Example– See xBox.

• And, engineers often aren’t especially loyal to their past power device supplier. Their ready to change suppliers for better price:performance.

• So, providing customers with better price:performance parts is the value proposition they care about.

2) Or, one exception, we win when incumbent suppliers have shortages.

Renesas Electronics America Inc.

Study about Microsoft X-box

XBOX360 ELITE M/B

□□NTD4813NHNTD4813NH

○○NTD4806NHNTD4806NH

CPUGPU

DDR Memory

IRF8915IRF8915

XBOX360 ELITE Parts list (DC/DC MOSFET)

Phase fsw (kHz) Vout (V) memoMemory NTD4813NH-D 1 NTD4813NH-D 1 1 580 1.9

5V NTD4813NH-D 1 NTD4813NH-D 1 1 580 5

CPU NTD4813NH-D 1 NTD4806N-D 2 2 265 1

GPU NTD4813NH-D 1 NTD4806N-D 2 2 275 1.2

Vdrive H=6.0V L=12.0V

Hi Side Lo Side

part# PortionVDSS

(V)VGSS

(V)

RDS(on) mohmRg(Ω)

Ciss(pF)

Coss(pF)

Crss(pF)

VGS=4.5V VGS=10V

NTD4813NH Hi-side 30 20 20.9 10.9 0.55 796 228 119

NTD4806N Lo-side 30 20 7.9 4.9 1 1,901 518 245

part# PortionVDSS

(V)VGSS

(V)

RDS(on) mohmRg(Ω)

Ciss(pF)

Coss(pF)

Crss(pF)

VGS=4.5V VGS=10V

2SK4212 Hi, Lo-side 25 20 8.5 5.5 3.6 1,131 244 153

Renesas proposal

Characteristics of current MOSFET

Comparison PKG Surface Temp.

Ph-1-H

Ph-1-L1

Ph-1-L2

Ph-2-H

Ph-2-L1

Ph-2-L2

Current Renesas ProposalHi:NTD4813NH x1 Hi:2SK4212 x1Lo:NTD4806N x2 Lo:2SK4212 x2

Ph-1-H 53.1 53.2Ph-1-L1 52.2 53.3Ph-1-L2 52.4 53.3Ph-2-H 65.4 64.5Ph-2-L1 65.2 65.2Ph-2-L2 65.2 65.3 unit degC

TestTest Conditions:Conditions:

･ Game Demo ･Wait Time = 15min

Almost same temperature!

Evaluation data using actual XBOX360

Comparison spike Voltage

Current.Hi:NTD4813NH x1 Lo:NTD4806N x2

Vpeak=20.4V

Renesas ProposalHi:2SK4212 x1 Lo:2SK4212 x2

Vpeak=18.0V

Lower than current devices.

IC

Vin

Vout

R load

coil

Hi side MOSFET

Lo sideMOSFET

V spike.

Low Noise!

80

81

82

83

84

85

86

87

88

89

90

91

92

0 5 10 15 20 25 30Iout(A)

eff

icie

nc

y(%

)DPAK_JET+ DPAK_BEAM( Estimation data, Under planning)

2SK4212+2SK4212

NTD4813NH+NTD4806N

condition1H/2L 1phaseVin=12VVout=1.2VVdr : H=6V L=12VFpwm=275kHzL=560nH

Comparison Efficiency (Sim.)

part# PortionVDSS

(V)

RDS(on) mohmRg(Ω)

Ciss(pF)

Coss(pF)

Crss(pF)

VGS=4.5V VGS=10V

NTD4813NH Hi-side 30 20.9 10.9 0.55 796 228 119

NTD4806N Lo-side 30 7.9 4.9 1 1,901 518 245

2SK4212 Hi, Lo-side 25 8.5 5.5 3.6 1,131 244 153

DPAK_JET* Hi-side 30 9.6 7 0.8 1,219 250 77

DPAK_BEAM* Lo-side 30 6.7 5.5 1.4 2,291 329 177

SmallCapacitance!

BEST Efficiency!

*Under planning (Estimation data)

Analysis ConditionModeling of GPU Block for Thermal Simulation

GPU Block

Modeling

PowerMOSPackage:DPAK

PCB

Inductor

Capacitor

Capacitor

Airflow Distribution

Position where Airflow is displayed2.0 m/s

Thermal Analysis Data

Triac and Thyristor

Triac and Thyristor: Definition

What is a Triac? A bi-directional electronic switch which can conduct current in

either direction when triggered; no polarity Used in AC circuits because it allows for large power flows with

milliampere scale control currents

Triac and Thyristor: Applications

電動工具

Lamp

TriacsControl rectifier

Washing machine

Rice cooker

Toilet seat

Vacuum Cleaner

Camera (strobe)

Leakage detector

Control capacitor(LC resonance)

Heater MotorSolenoidValve

AC Control

Others

Printer, Copier FAX

LampDimmer

SSR

SMPS(Inrush current

Protection)

Inverter Lamp (Inrush current

Protection)

Fan heater(Ignitor)

Boat Jet ski （ Ignitor ）

Bike Regulator ）

Automatic Dish washer

Electric tool

Thyristors

Electric Fan

Triac: Product Overview

UPAK

5 10 20 25 30

TO-92

MP-3A

TO-220

TO-220S

TO-220FN

TO-220F

TO-3PTO-3PFM

1668 121

0.8

600, 700, 800V

700V

600, 700V

600V

600V

600, 1500V

600V

600, 700V

600, 700, 800, 1000V

400, 600, 700, 800, 1000V

600V

IT(RMS) (A)

VDRM (V)

23

TO-220FL 600, 700V

SOT-223

600V

Thyristor: Product Overview

UPAK

5 10 25

TO-92

MP-3A

DPAK(L)-(3)

TO-220

TO-220FN

TO-220F

166 8 1210.8

400, 600V

400V

600V

600V

600V

600V

600V

MPAK

TO-3PFM

600V

0.1 0.3 0.5

IT(AV) (A)

VDRM (V)

3

Triac and Thyristor: Roadmap

‘02‘00

PlanarPlanar LB seriesLB series

600V600V(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

PlanarPlanar LA seriesLA series600600 ～～ 1000V1000V(Tj=125 )℃(Tj=125 )℃

GeneralGeneral

PlanarPlanar LGLG seriesseries600V600V ～～ 800V800V

(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

PlanarPlanarHigh PowerHigh Power

400V400V ～～ 1500V1500V ～～ 30A30A(Tj=125/150 )℃(Tj=125/150 )℃

GeneralGeneral

PlanarPlanarLDLD seriesseries

600V600V ～～ 700V700V(Tj=150 )℃(Tj=150 )℃

Low InushLow Inush

PlanarPlanar AA ｌ ｌ Ribbon Ribbon

600V600V ～～ 700V700V(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

For low inrush current

High Voltage

/ High

Temperature

‘04 ‘06 ‘08 ‘10

High

Power

New type

Glass Glass Passivation Passivation (Tj=125 )℃(Tj=125 )℃

GeneralGeneral

High

Commutation

Planar Planar technologytechnology

(Tj=125 )℃(Tj=125 )℃

GeneralGeneral

High reliabilityguarantee 150℃

Triac

Thyristor

PlanarPlanar44 ～～ 16A16A

800V800V(Tj=150 )℃(Tj=150 )℃

High Commutation

High Commutation

Under Development

Planar Planar technologytechnology

(Tj=150 )℃(Tj=150 )℃

GeneralGeneral

guarantee 150℃

PlanarPlanar600V600V ～～ 700V700V

～～ 20A20A(Tj=150 )℃(Tj=150 )℃

General &Low Inrush

General &Low Inrush

New package

TO-220FL

Under Development

Triac and Thyristor: Packaging

See Renesas Discrete General Catalog

15

.5±0

.3

4.5±0.5

ex. TO-220F(A8 type)Various Lead Forming

TO-92TO-92

OtherOther

TO-220FNTO-220FN

InsulationInsulation Non InsulationNon Insulation

TO-220STO-220S

MP-3AMP-3A

TO-3PTO-3P

UPAKUPAK

TO-220FTO-220F

DPAK(L)-(3)DPAK(L)-(3)

TO-220TO-220

TO-220F(2)TO-220F(2)

TO-3PFMTO-3PFM

MPAKMPAK SMD

SMD

SMD

SMD

TO-220FLTO-220FL

SOT-223SOT-223

Triac and Thyristor: Features

Planar Technology

Wide Lineup

★ Optimized for your design

Tj 125 , 150 Triac & Thyristor℃ ℃ High voltage, high current Repetitive inrush current Lower power loss Low inrush current

★ Optimized for various applications

Guaranteed Max. Tj 150C High reliability

Insulation, Non-insulation Surface Mount, Lead type Various Lead Forming

Various package and Lead Forming

Triac and Thyristor: Application details necessary for part selection

Application and Electrical Spec questions1. What kind of load is the Triac or Thyristor driving? Motor,

heater, or solenoid?2. What is the voltage of the AC line?3. What is the Operating Current?4. What is the inrush current? (if inductive load, as with a motor)5. What is the competitive parts and price (from customer)?

Package Questions1. Surface Mount or Lead Type?2. If Lead Type, is requirement for an Insulated or non-Insulated

package?

MOSFET

MOSFET: Combined Market Share 20V-100V

2008 Billing$12.1B

(Marketing Eye)

2008 Billing$3.7B

(Marketing Eye)

2008 Billing$17.3B

(Gartner)

MOSFET: Ranking and Market Share Summary 20V-100V

Source: Market Eye, March 2009

Vishay

Fairchild

IR

Toshiba

Rohm

Alpha & Omega

Sanyo

Infineon Technologies

On Semi

1

2

3

4

5

6

7

8

9

10

Low Voltage MOSFETs

Renesas Electronics

2009 Rankings

Renesas 17.1%

Vishay 13.4%

Fairchild 13%

IR 12.4%

Toshiba8.6%

Alpha & Omega6.1%

Sanyo 4.8%

Infineon 4.4%

On Semi 3.7%

ST 2.4%

Others7.8%

Rohm 6.2%

2009 Share

MOSFET: Capacity and Shipments

Renesas Electronics:Total Low voltage MOSFET package monthly capacity 173Mu/M

0 500 1,000

1.0 billion Renesas Electronics Power Management and General purpose devices shipped each month

Components (1000M)

D-PAK62Mu

D-PAK62Mu

TO-251 14MuTO-251 14MuHWSON

15MuHWSON

15Mu SOP820MuSOP820Mu

WPAK30Mu

WPAK30Mu

TO-220 13MuTO-220 13MuTO-220 13MuTO-220 13Mu

LFPAK 11MuLFPAK 11MuVSOF 6MuVSOF 6MuOther 2MuOther 2Mu

MOSFET: Target Applications

■ VR* for CPU Core, GPU, Chipset and Memory.

■ Primary / Secondary use for Brick Converter and SR / Oring Switch for AC/DC Power Supply.

■ Power Management Switch for Li+Ion Battery (N/B PC).

Server , Network, TelecomNote Book PCVGA

Server , Router Telecom

* VR : Voltage Regulator

Win High Efficiency forNote PC Power Supply

New Generation Power MOSFET

RJK0305DPB■ Low RDS(on)=10mΩ

■ High Speed Switching(tf=3.0ns)

■ Low Gate Charge(Qg=8nC)

Win High Efficiency forNote PC Power Supply

New Generation Power MOSFET

RJK0305DPB■ Low RDS(on)=10mΩ

■ High Speed Switching(tf=3.0ns)

■ Low Gate Charge(Qg=8nC)

*SR : Synchronous Rectification

MOSFET: Discrete and Integrated Products Roadmap

MOSFET: Low Voltage Products Roadmap

© 2010 Renesas Electronics Corporation. All rights reserved.33

MOSFET Roadmap for PC Li+ Battery

2008 20102009

BVDSS / RDS(on) typ @ 10V

Battery capacity increasing in smaller packages

UMOS4UMOS4 JET/BEAMJET/BEAM UMOS6UMOS6

UPA2743T1A30V / 2.1mΩ UPA2743T1A30V / 2.1mΩ

UPA280730V / 3.8mΩ

UPA280730V / 3.8mΩ

UPA2722UT1A

30V / 2.4mΩ

UPA2722UT1A

30V / 2.4mΩ

UPA2721AGR

30V / 3.6mΩ

UPA2721AGR

30V / 3.6mΩ

UPA2720AGR

30V / 5.5mΩ

UPA2720AGR

30V / 5.5mΩ

UPA2742GR35V / 4.0mΩ UPA2742GR35V / 4.0mΩ

UPA27xxT1A30V / 1.2mΩ UPA27xxT1A30V / 1.2mΩ Lower RDS(on)1.x mΩclass1.x mΩclass

2.x mΩclass2.x mΩclass

3.xmΩclass3.xmΩclass

5.xmΩclass5.xmΩclass Small PKGUPA2804

30V / 5.6mΩUPA2804

30V / 5.6mΩ

UPA2744UT1A

30V / 1.6mΩ

UPA2744UT1A

30V / 1.6mΩ

Lower RDS(on)

UPA28XX30V / 3.0mΩ

UPA28XX30V / 3.0mΩ

VDSS=35V5.xmΩclassVDSS=35V5.xmΩclass

Small PKG

RJK0362DSP30V / 5.0mΩRJK0362DSP30V / 5.0mΩ

RJK0358DSP30V / 3.2mΩRJK0358DSP30V / 3.2mΩ

RJK0356DPA30V / 2.2mΩRJK0356DPA30V / 2.2mΩ

RJK0358DPA30V / 3.4mΩRJK0358DPA30V / 3.4mΩ

RJK03E0DNS30V / 4.3mΩRJK03E0DNS30V / 4.3mΩ

RJK03E1DNS30V / 5.3mΩRJK03E1DNS30V / 5.3mΩ

UMOS5UMOS5

5×6×1.8 5×6×1.0 3.3×3.3×0.95

UPA27XXUPA27XXSOPSOP

UPA27XUPA27XXX

HVSONHVSON

UPA28XXUPA28XXmini-HVSONmini-HVSON

5×6×1.7 5×6×0.8 3.3×3.3×0.8

RJK03XXSOP

RJK03XXWPAK

RJK03XXWSON303

0

© 2010 Renesas Electronics Corporation. All rights reserved.34

UPA235020V/~35mΩ ＊

UPA235020V/~35mΩ ＊

UPA2450B 20V/~17.5mΩ

UPA235130V/~40mΩ ＊

UPA235130V/~40mΩ ＊

UPA2451B30V/~20mΩ

UPA2451C30V/~20mΩ

UPA2450C20V/~17.5mΩ

UPA2351B30V/~40mΩ ＊

UPA2351B30V/~40mΩ ＊

Parts Name: VDS / RDS(on) max VGS = 4.5V＊ Rss(on) ： 2 chip on-state resistance

UPA235224V/~43mΩ ＊

UPA235224V/~43mΩ ＊

UPA2352B24V/~43mΩ ＊

UPA2352B24V/~43mΩ ＊

Process

UPA2350B30V/~35mΩ ＊

UPA2350B30V/~35mΩ ＊

UPA245430V/~11mΩ

UPA245520V/~13mΩ

UPA246030V/~20mΩ

UPA246120V/~17.5mΩ

UMOS4 UMOS5 UMOS6

UPA235020V/~35mΩ ＊

UPA235020V/~35mΩ ＊

UPA235130V/~40mΩ ＊

UPA235130V/~40mΩ ＊

UPA2351B30V/~40mΩ ＊

UPA2351B30V/~40mΩ ＊

UPA235224V/~43mΩ ＊

UPA235224V/~43mΩ ＊

UPA2352B24V/~43mΩ ＊

UPA2352B24V/~43mΩ ＊

UPA2350B20V/~35mΩ ＊

UPA2350B20V/~35mΩ ＊

UPA2351C30V/~40mΩ ＊

UPA2351C30V/~40mΩ ＊

UPA2352C24V /~43mΩ ＊

UPA2352C24V /~43mΩ ＊

UPA2350C24V/~35mΩ ＊

UPA2350C24V/~35mΩ ＊

2.0 x 5.0 mm

4-pin EFIP（ BGA type ）

～ 1.62 x 1.62 mm

～ 1.62 x 1.62 mm

4-pin EFLIP （ LGA typ

e ）

Smaller packageSmaller package

UPA235xC24V/~25mΩ ＊

UPA235xC24V/~25mΩ ＊

Thinner/smaller CSPThinner/smaller CSP

6pHWSON

8pHUSON

2.0 x 2.7 mm

対象品種（計 6 品種）

MOSFET Roadmap for Mobile Li+ Battery

NEWNEW

NEWNEW

Under Plan

2006 20082007 2009

MOSFET: High Efficiency “JET” Series

30% Cut RDS(on)

Low On State Power Loss

Low Driver Power Loss

Low Switching Power Loss

27% Cut Qg 30% Cut Qgd

Reduced the Thermal Temperature

Capable High Current High Performance

Ultra Low RDS(on)

Low Qg Low Qgd

Achieve High Freq. & High Slew Rate

LFPAK 1.6mΩtypWPAK 1.5mΩtypSOP-8 2.6mΩtyp

Saving EnergyHigh Efficiency

(Compare with previous)

MOSFET: Questions for the Customer – “JET” Series

• Our “Sweet Spot” for LV is 30V

• Many opportunities can be covered with “JET” series

• High D-in success rate in US Market

• Use the Q&A from the RSSI Site “Rep Sales Guide”

• With our vast lineup of LV and MV MOSFETs, IGBTs, and Triacs, we have a “fit” for just about any application.

• For assistance, please contact the appropriate team member at HQ.

MOSFET: Figure of Merit Improvements

Speed Series97mΩnC

JET Series7878mΩnC

20% Down

To

tal

Gat

e C

har

ge

Qg

( nC

)

RDS(on)(VGS=4.5V) typ (mΩ)1 105

10

20

50

2

RENESAS 8th Gen.

RENESAS Speed ‘05

Low Conduction Loss

Lo

w C

har

ge

Lo

ss

100

RENESASJET ‘07

High E

ffici

ency

● Figure of Merit : FOM(Ron ･ Qg) at Vgs=4.5V 　　

MOSFET: New “BEAM” Series

High Efficiency

Features

Target Application Server(CPU,Memory) DT/NB-PC(CPU,Memory) Graphic Card(GPU)

Low noise

Space saving

BEAM small PKG (3mmx3mm)

BEAM+SBD

Low thermal concernLong battery life

Reducing EMI noise

83

84

85

86

87

88

89

90

91

92

93

0 5 10 15 20 25 30Iout (A)

Eff

icie

ncy

(%

)

JET

BEAM

Hi : RJK0305DPB (common)

Lo : RJK03C0DPA (BEAM)

Lo : RJK0346DPA (JET)

< Test Conditions > Vin=12V, Vout=1.2V, VDR=5V ， fsw=350kHz, L=0.45uH, No Air flow

1H/1L

1% Up1% Up

MOSFET: Rds(on) TrendR

DS

(on

)ty

p [

mΩ

]

Vg

s=4

.5V

200620042002

8th Gen.

2012

3.4mΩ

RJK0301DPBRJK0301DPB

Speed

2014

0.5

2.5

3.0

1.9mΩ

Low Crss/Ciss(0.073)

Low Crss/CissLow Crss/Ciss(0.044)(0.044)

2.0

3.0mΩ

2008 2010

RJK0346DPA

RJK03C0DPA

10th JET

11th BEAM

1.7mΩ

1.0

1.5

Year

3.5 HAT2165H Nch 30V Low Side MOSFETNch 30V Low Side MOSFET

Low Qg/QgdLow Qg/Qgd Next Gen.

Under Study

DrMOS

DrMOS and POL-SiP: Products, Packaging, Applications

MOSFET

IC

D8 (20V)

IP65 (16V)

Wire bonding, PB free

2004 2005 2006 2007 2008 2009 2010

JET (30V)

IP75 (27V)

Clip bonding, Terminal Pb free, Halogen free

Notebook PCs V-core & non V-coreServer & Desktop PCs non V-core (VTT, DDR, etc…)

Server & Desktop PCs V-core

6x6mm PKG

For VR12/IMVP7

1st Gen. PKG(Wire Bonding)

2nd Gen. PKG(Clip Bonding)

1st Gen. PKG(Wire Bonding)

8x8mm PKG

2nd Gen. PKG(Clip Bonding)

POL-SiP: Control IC & MOSFETsPOL-SiP: Control IC & MOSFETs

DrMOS: Driver IC & MOSFETsDrMOS: Driver IC & MOSFETs

POL all in one DevicePOL all in one Device

Package

R2J20701

<Target Application>

R2J20751

R2J2070x

R2J2060x

mass production Under developing Under studying

<Technology>

<Products>

The World’s first DrMOS

in 2004

R2J20601R2J20602

R2J20702Higher Performance

Higher Performance

Light & Heavy Load Efficiency up

R2J20605A8x8mm PKG

R2J20604

Light &Heavy Load Efficiency up

VCIN=12V

Intel Rev3.0/ High Voltage

SmallerPackage

R2J2065xR2J20653A

R2J20652AIntel Rev3.0

R2J20651A6x6mm PKG

R2J20651

PWM=5V UP

Wide Input Range

BEAM (30V)

DrMOS: R2J20605ANP 8x8 Package

3-Chip in One Package

Features

Driver IC + Top MOS + Bottom MOS

Huge output current

50% smaller than discrete solution

up to 40A (same as R2J20602NP)Top MOSFET

8 x 8 x 0.8mmQFN 56pin

Target Application Telecom/Server

Storage/Graphic Card

Multi-Phase DC-DC converter

Remote ON/OFF

Built-in SBD for boot-strapping

Functions

Drive

r

PW

M

Co

ntro

ller(M

ulti-p

hase) D

river

Multi-Phase

Bottom MOSFET

with SBDwith SBD

Gate Driver

Pin Compatible (DrMOS spec.)

Capable of 5V PWM Signal

QFN56QFN56

NewNew

DrMOS: R2J20651NP/ANP 6x6 Package

6x6mm QFN-40pin = More Space SavingMore Space Saving

Area = 36 mm2

DrMOS 6x6

Area = 64 mm2

R2J20602NP 8x8

Space-saving

-- 4444%%

QFN-40pin 6x6mmQFN-56pin 8x8mm

6mm x 6mm

R2J20651NP

PWM Input

ThermalWarning

ThermalShutdown

Status

Sample MPNote

35AR2J20652ANP

16V

5V VCIN=12V version

27VR2J20653ANP Intel Rev3.0

Intel Rev3.0

R2J20651ANP

5V &3.3V

VinMax

IoutMax

Driversupply

5V

5V

130C

130C

115C 150C

NewNew

NewNew

5V,12V and 20V

IGBT(Insulated Gate Bipolar Transistor)

IGBT: Definition

What is an IGBT? Insulated Gate Bipolar Transistor Isolated FET and a Bipolar Power Transistor in a single device Noted for high efficiency and fast switching Apps include inverters for various apps, large appliances,

electric cars, AC systems, PDP Interest building for US-based designs

– Induction Heating(IH) Cooktops– Motor Control for Major Home Appliances– Large Industrial Power Supplies

・ High current　 Low Vce(sat) Low VF

・ High speed switching

IGBT: Applications and Product Strengths

High capability (Short circuit time)

High efficiency

・ Built-in FRD・ Small PKG (TO-220Full Mold　　 LDPAK,MP-3A)

Miniaturization

High reliability

Renesas develops the best product by the application !

IGBT: Development Roadmap

2005 2006 2007 2008 2009 2011

G4

Hig

h p

erfo

rma

nce

& H

igh

effi

cien

cy

2012

30V

11th Gen.Next-Gen600V/1200V

G5600V

VGE=30VG5H

600V/1200V

Planar construction

Trench technology

Trench technology

High speedG4S

600V

G6HVGE=30V

2010

High Speed &Low Vce (sat) Type : RJH60FXX Series

High Short Circuit Capability Type :RJH60DXX Series

Optimum Design for Specific Applications

Optimum design of cell structure.

Thin wafer

1,100-1,200VG6H-RC

Reverse conducting

Trench technology

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3

IGBT: New G6H Series vs G5 Series

Co

llect

or

curr

en

t I C

[A]

RJH60F5DPK(80A/600V)

(G6H series)

Tc = 25 ℃VGE = 15 V

GN6060V5DP(60A/600V) (G5 series)

Improvement 30%

600V

IGBT: Renesas vs The Competition

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 200 400 600 800 1000 1200 1400 1600 1800Turn-off Loss Eoff（μJ)

VC

E(s

at)

(V)

RenesasG5 Process Perfomance

R 4068D

T 60J323

FC 20N60

I 50N60

(Inductive load,Tc=125℃,IC=40A,VCC=300V,VGE=15V,RG=5ohm)

G6H series

Company A

Company B

Company C

Company D

600V

IGBT: Features and Applications by Product Type

G6H Ultra Low VCE(sat) Series 600V IGBT Features

– Ultra Low Collector to Emitter Saturation Voltage– Built-in Fast Recovery Diode (FRD) in Single Package– High-Speed Switching

Applications– Induction Heating (IH) Cooktop– Current Resonance, Half Bridge– Soft Switching Applications

New Products

3Q/’10OKTO-3PYES300V30A95ns15V45A1.35V45A85A600VRJH60F6DPK

OKOKTO-3PYES300V30A80ns15V30A1.40V30A60A600VRJH60F4DPK

Tc=100℃Tc=25℃

25A

40A

50A

MPWS

OK

OK

OK

Status

OKTO-3PYES300V30A95ns15V50A1.35V90A600VRJH60F7ADPK

OKTO-3PYES300V30A80ns15V40A1.37V80A600VRJH60F5DPK

OKTO-3PYES300V30A90ns15V25A1.40V50A600VRJH60F0DPK

PKG

IC VCEIC VGE Typ.Typ.

tf （Resistance Load）

FRD

VCE(sat)ICVCEP/N

3Q/’10OKTO-3PYES300V30A95ns15V45A1.35V45A85A600VRJH60F6DPK

OKOKTO-3PYES300V30A80ns15V30A1.40V30A60A600VRJH60F4DPK

Tc=100℃Tc=25℃

25A

40A

50A

MPWS

OK

OK

OK

Status

OKTO-3PYES300V30A95ns15V50A1.35V90A600VRJH60F7ADPK

OKTO-3PYES300V30A80ns15V40A1.37V80A600VRJH60F5DPK

OKTO-3PYES300V30A90ns15V25A1.40V50A600VRJH60F0DPK

PKG

IC VCEIC VGE Typ.Typ.

tf （Resistance Load）

FRD

VCE(sat)ICVCEP/N

IGBT: Features and Applications by Product Type <<Will move to Appendix>> G6H Reverse-Conducting 1,000-1200V IGBT

Features– Single-chip IGBT with Integrated Diode– Low Collector to Emitter Saturation Voltage– High-Speed Switching

Applications– Single Transistor Type Voltage Resonance Circuit– Induction Heating (IH) Cooktop– Soft Switching Applications

New Products (Target Spec)

4Q/’102Q/’10TO-3P10ATBDYES15V25A(1.70V)(25A)(50A)1200VRJH1CF5RDPK

4Q/’102Q/’10TO-3P10A2.1YES15V30A(1.65V)(30A)(60A)1200VRJH1CF6RDPK

YES

YES

YES

Diode

Body

4Q/’102Q/’10TO-3P10ATBD15V60A(2.00V)(30A)(60A)1100VRJH1BF7RDPK

(20A)

(35A)

(Tc=100℃)

IC

MPWS

2Q/’10

2Q/’10

Status

4Q/’10TO-3P10A2.115V35A(1.65V)(70A)1200VRJH1CF7RDPK

4Q/’10TO-3P10A2.515V20A(1.70V)(40A)1200VRJH1CF4RDPK

PKG

IFIC VGE Typ.Typ.

VFVCE(sat)IC

(Tc=25℃)

VCEP/N

4Q/’102Q/’10TO-3P10ATBDYES15V25A(1.70V)(25A)(50A)1200VRJH1CF5RDPK

4Q/’102Q/’10TO-3P10A2.1YES15V30A(1.65V)(30A)(60A)1200VRJH1CF6RDPK

YES

YES

YES

Diode

Body

4Q/’102Q/’10TO-3P10ATBD15V60A(2.00V)(30A)(60A)1100VRJH1BF7RDPK

(20A)

(35A)

(Tc=100℃)

IC

MPWS

2Q/’10

2Q/’10

Status

4Q/’10TO-3P10A2.115V35A(1.65V)(70A)1200VRJH1CF7RDPK

4Q/’10TO-3P10A2.515V20A(1.70V)(40A)1200VRJH1CF4RDPK

PKG

IFIC VGE Typ.Typ.

VFVCE(sat)IC

(Tc=25℃)

VCEP/N

Under development

IGBT: Questions for the Customer

Applications Induction Heating, i.e Cooktop

– What type of circuit? Current resonant or voltage resonant?– What is the load capacity (kW)?– What is the operating current?– What is the switching frequency?– What package is required?– What is the competitive parts and price (from customer)?

Others– What is the AC input voltage?– What is the load capacity (kW)?– What is the operating current?– What is the switching frequency?– Is a Fast Recovery Diode (FRD) required?– Is short circuit capability required?– What package is required?

Diode

Diode: W/W Market Share and Product Breakdown

Diode: Shipments by Application

FEM, ASMTV tuner

VC. BSWPIN

Application

OA4%

automotive18%

industry25%

mobile36%

consumer17%

Diode: Product Lineup by Device Type

Switching (SW)

Zener (ZN)

Schottky (SB)

Varicap (VC)

Band SW (BSW)

PIN (PIN)

Small signal rectification

Constant voltageESD protection

DetectorCurrent Stopper

TV tuner, AFC, VCO

RF SW Diode

ANT-SW

GeneralPurpose

Small signal

PW

PW(over Io=0.5A)

HighFrequency

Small signal (under Io=0.5A)

Rectifier Current Stopper

ESD protection

Diode: Products and Applications Zener

Zener Diodes for Surge Absorption High ESD Level (25-30kV) Type

– Protection at interface section of an electronic device– For use at DC in location of Mobile Phones and other Portables

High Speed Signal (~10kV), Low Capacitance Type– Host PC and Peripherals, ex. USB 2.0

Lineup

Capacitance (pF)

10

20

30

1 10 100

ESD

Tole

rance

(kV

) HZM27FAHZM6.8ZMFARKZ6.8ZMFAKT

HZM6.8MFARKZ6.2KLRKZ6.8TKK(bi-directional)

Low capacitance SeriesHigh ESD level Series

HZL6.8Z4HZD6.2Z4HZM6.8Z4MWARKZ6.2Z4MFAKTHZM6.8Z4MFA

HZM6.2ZMWA/FA

HZM5.6ZFA

Diode: Market Needs, Future Activity Zener

Market Needs Compliance with Directives on EMC (Electromagnetic Compatibility) Small Distortion on Wave-Form in High-Speed Signal Lines (USB, etc) Small and Thin Package for High-Density Surface-Mount Environmentally-Friendly Products

Future Activity High ESD (Electrostatic Discharge) Level Based on IEC61000-4-2 Low Capacitance Compound and Small Products (four devices/package, two devices/package) VSON-5 (four devices) Support for Lead-Free and Halogen-Free Products

Diode: Application Examples and Packaging Schottky

Schottky Diodes for Circuit Protection High-Intensity LED LED and LCD Drivers CAN and LIN Bus (Bi-Directional Type) Automotive Battery for Mobile Equipment

Small/Ultra-Small Packaging

Bare Die also available for integration into products like LED Modules

Diode: Market Needs and Future Activity Schottky

Market Needs High Efficiency/Low Loss Small Distortion for High-Frequency Signals Wide Variation of Forward Current Small and light-weight products Environmentally-Friendly Products

Future Activity Low Forward-Voltage Drop Low Leakage Current Low Capacitance Wide Lineups of Products Small and Compound Products Support for Lead-Free and Halogen-Free Products

Thank You