Sensors 402.02.04.02

Ronald Lipton February 2, 2016

1  Director's  Review  –  [OT  Sensors]  Overview  Ronald  Lipton,  2015  September  17  

R.  Lipton,  February  2  2016  

Sensor Institutions

§  Brown University

§  University of Rochester

§  University of California, Davis

§  Fermilab

§  Brown and Rochester qualified as “Sensor Quality Centers”

2  Director's  Review  -­‐-­‐  [Sensors]  Overview  

§  The CMS outer tracker will require 200 m2 of silicon for the outer tracker as well as 600 m2 for HGCAL. This corresponds to 20,000 6” wafers for the tracker or ~50,000 6”or 30,000 8” wafers for HGC.

§  The sensors in the inner region will be thinned to 200 microns or less for radiation hardness

§  All vendors must be qualified and candidate sensor types must be thoroughly radiation tested

§  A sample (1%?) of production sensors will be tested in detail

§ Optimize and validate designs based on testing and simulation

3  

Sensor Challenges

Director's  Review  –  OT  Sensors  Overview   R  Lipton,  2016  February  2  

§  2S Sensor §  10x10 cm, 100 µm pitch, 5 cm

long, AC Coupled, ~320 µm thick

§  PS Strip Sensor §  5x10 cm, 100 µm pitch, 2.5

cm long, AC Coupled, 200-320 µm thick

§  PS Pixel Sensor §  5x10 cm, 1446 x 100 100 µm

pitch, DC Coupled, 200-320 µm thick

4  

Sensor Designs and types

Director's  Review  –  OT  Sensors  Overview   R.  Lipton  

§  Detailed testing of prototype sensors

§  Sensor radiation testing

§  Sensor production testing

§  Sensor TCAD modeling

§  Development and testing of sensors based on 8” wafer technology

5  

Sensor Thrusts

Director's  Review  -­‐-­‐  –  OT  Sensors  Overview   A.  Grace,  2015  September  17  

§  Detailed testing of vendor prototypes §  full-size HPK (6”)

o  PS module strip and pixel o  2S module strip

§  Novati (8”) o  PS module pixel and strip o  HGC o  Test structures and thinned devices

§  CIS (4”) o  MPA-lite small area sensors

§  Infineon (8”) o  PS module strip o  HGC

6  

Prototype Sensor Testing

Director's  Review  -­‐-­‐  [MY  L2  AREA]  Overview   A.  Grace,  2015  September  17  

Brown  HPK  #14  –  p-­‐stop    

Rochester  HPK  #7,  12,  30  

alexander.dierlamm@kit.edu12 16.12.2015

Distribution of parts

Let us know, if you are interested in a specific study!

Status of Sensor Development, Procurements and Market Survey

http://doodle.com/poll/gmr4ruschiqf9msz

2

7  

Prototype Sensor Strip Tests

Director's  Review  -­‐-­‐  [OT  Sensors]  Overview   R.  Lipton,  February  2,  2016  

Prototype  Hamamatsu  tests  from  Rochester  

Dielectric  leakage  

Strip  leakage  

Coupling  Capacitance  

§ Qualify new designs from Novati and Infineon as well as variants from Hamamatsu

§  Domestic Facilities §  UC Davis – 72” cyclotron, TRIGA reactor

o  Limited total dose o  SEU meaurements

§  Brown University – reactor at Rhode Island Nuclear Science Center

§  Sandia Laboratory - 800 MeV protons o  Periodic runs

§  Possible conversion of Muon Test Area (400 MeV protons) at Fermilab for radiation testing o  Uncertain due to cost of shielding and safety qualification

8  

Sensor Radiation Testing

Director's  Review  -­‐–  OT  Sensors  Overview   A.  Grace,  2015  September  17  

§  Production testing by QC centers at Brown and Rochester §  Fully test ~ few percent of sensors

§ Overflow and additional testing at Fermilab

9  

Sensor Production Testing

Director's  Review  -­‐-­‐  –  OT  Sensors  Overview   A.  Grace,  2015  September  17  

alexander.dierlamm@kit.edu11 16.12.2015

Distribution of parts

Status of Sensor Development, Procurements and Market Survey

§  Based on the Silvaco TCAD package

§  Includes process and 3D simulations §  Strip sensor modeling §  HGCAL design models §  Novati process

modeling §  Optimization of

geometries and guard rings

10  

Sensor TCAD Modeling

Director's  Review  -­‐–  OT  Sensors  Overview   A.  Grace,  2015  September  17  

Full$Process$ A,er$Implant$

resist$

N$implant$$Before$anneal$

N$implant$$a,er$anneal$

pspray+1pstop1pstop pspray+2pstops 2pstops

Guard  ring  op[ons  

§  Last May we produced the first 8” sensor wafers for HEP in collaboration with Tezzaron/Novati §  There is a clear need for larger capacity for silicon wafers as well

as reduced cost associated with larger area/wafer §  n-on-p, minimum of 500 µm initial tests were very encouraging

§  There is currently an SBIR-sponsored run to produce wafers with thin active regions §  Thin silicon is necessary both for mass and radiation hardness §  Wafers are produced as silicon-on-insulator stacks

§  A phase 2 SBIR would be aimed at qualifying the process for CMS and ATLAS

§ We also are working with Northern Illinois to produce pilot Si-Si bonded 4” wafers

11  

Development of Sensors on 8” Wafers

Director's  Review  -­‐-­‐  –  OT  Sensors  Overview   A.  Grace,  2015  September  17  

Characteristics• 500 Pm thick wafer depletes around 350 V

• Oxide thickness | 1 Pm – consistent with expectations• Dark current | 1-10 PA/cm3

• Interstrip capacitance | 1pF/cm• Interstrip resistance | 10 G:

11/10/2015 Heintz - Tracker Upgrade Week 6

Parameter MD LDDepletion voltage 𝑉 351 V 341 V

Capacitance 𝐶 6 pF 23 pFThickness 𝑑 (direct measurement: 457 Pm) 449 Pm 450 PmEffective doping concentration 𝑁 23u1011/cm3 22u1011/cm3

Resistivity U 5.7 k:cm 6.5 k:cm

Overall Characteristics of the Novati wafers

§  Measurements of the medium and large diode 500 micron test structures

2/1/16  

•  Oxide  charge  ~  1.2x1011  •  Mul[guard  structures  showed  low    

breakdown  

IV characteristics of diodes• 725 Pm thick wafer without p-spray• IV curves of LD and MD from subsequent tests• Breakdown voltage increases slightly for 2nd and

subsequent measurements

7/17/2015 Heintz - Novati measurements 7

Medium diode Large diode

1st measurement1st measurement

LD

MD

Brown Brown

•  P-stops only •  Several GR variants •  2 P-stop doping variants •  2 FZ, 500 micron •  4 SOI, 200 micron •  2 oxidation

variants

13  

8” Wafers

Director's  Review  -­‐–  OT  Sensors  Overview   R.  Lipton  

Teststructures

CMSpixels

CMSPSsensor

MAPSAlight

CMSpixels

CMSpixels

CMSHGC

FEI4Sensor

ANLPixels

SLACPixels

§  A good ohmic contact is difficult to achieve on thin active area 8” wafers. This due to:

•  Handling issues of thinned wafers – equipment is designed for 725 micron thick wafers

•  Deep diffusion on 8” not commercially available.

§  Alternatives •  Direct Si-Si bonded wafers – this technique is

used for power transistors, but quality of the interface and effects of thermal processing need to be understood. Easiest (cheapest) to process because the backside ohmic contact is “automatic” final processing is just backgrind

•  SOI – bond backside implanted FZ to handle and then grind, polish stack to proper thickness. Contact from front or backside etch.

§  Pilot run with Si-Si wafers with NIU starting soon

14  

8” Wafer R&D

Director's  Review  -­‐-­‐  [OT  Sensors]  Overview   R.  Lipton,  February  2,  2016  

FZ  silicon  

CZ  Silicon  <0.1  ohm-­‐cm  

FZ  silicon  

Handle  wafer  

Si-­‐Si  bonded  

SOI  

Summary

15  

Director's  Review  -­‐-­‐  –  OT  Sensors  Overview  

§  Brown and Rochester are qualify silicon testing centers, Fermilab provides additional capacity

§  There is an ongoing program of qualification and radiation testing

§ We are collaborating on the development of 8” sensor wafers with thin active regions

16  

Summary

Director's  Review  -­‐-­‐  –  OT  Sensors  Overview   R.  Lipton,  February  3  2014