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SEMATECH Mask ProgramEUV Blank Defect Status

Henry YunFeb 22nd, 2009

9 March 2009 2

Presentation Outline

• Blank defect programs

• Substrate defect

• Inspection status

9 March 2009 3

SEMATECH Lithography Programs

Mask

Alt. Litho

RMDC

EUVL

Su

bst

rate

, B

lan

k C

lean

Visi

ble

Ligh

t

Def

ect

Insp

ectio

n

Aerial imaging,

defect printability

Berkeley AIT

Mask Flatness

Defect-free Reticle Handling

Exposure tool &

Infrastructure

32/22 nm hp Readiness

Mu

ltila

yer

Dep

osi

tio

n

0.5 NA MET,

Source, Resist &

Mask extendibility

0.3

NA

EU

V M

ET

Ber

kele

y

0.3

NA

EU

V M

ET

Alb

any

193i IL

toolLow Sensitiv

ity

Resists for 1

93iDouble Exposure

Resists

Pattern Placement

MI Imprio300

NIL Evaluation

Maskless litho

assessments

Actinic d

efect

inspectio

n

Def

ect

Sm

oo

thin

g

Manufacturability&

Extendibility(Resist & Materials

Development Center)

NIL Template

0.25

NA

AD

T

Alb

any

EUV

Res

ist

Out

gass

ing

Writer

Strategy

Cleaning

InnovationM

ask Survey

Courtesy of Stefan Wurm

EUVL

193 Immersion

Alternative Litho

Mask defects are critical to enable EUVL. Many projects exist within SEMATECH to address these issues.

9 March 2009 4

Defect Reduction Roadmap

0.001

0.01

0.1

1

10

100

1000

10000

Jan-04 Jul-04 Dec-04 Jul-05 Dec-05 Jul-06 Dec-06 Jul-07 Dec-07 Jun-08 Dec-08 Jun-09 Dec-09 Jun-10 Dec-10

De

fect

de

nsi

ty s

cale

d to

18

nm

(cm

-2)

Pilot Line Goal < 0.04 defects/cm2

HVM Goal < 0.003 defects/cm2

Total defect density.Team formed to

agree on reporting data based on actual and not scaled value.

9 March 2009 5

Mask Blank Defects

Substrate ParticlePit Defect

Blank

Substrate

Deposited Particle

Polish Quality Incoming Embedded

ML Dep on Pit ML Dep Particle ML Dep Particle

Majority of blank defects originate from substrate quality and must be addressed.

9 March 2009 6

Incoming Substrate Quality

Small Particles

Flat Particles

Large ParticlesPost Clean

Native Pit

~50% of incoming substrate defects can be considered native pits

Pits can also form post embedded particle removal

9 March 2009 7

• Environment

• Slurry contamination

• Slurry coagulation

• Remaining glass particles

• Pad material

• Bacteria

• Glass manufacturing

• UPW

• Cleaning chemicals

Dream

Pad

GlassSlurry

CM

P

Reality

CM

P

Defect particles

Embedded particles New pits

Substrate Defect Origin

9 March 2009 8

Substrate Inspection

9 March 2009 9

Laser Inspection Damage

Pre-M7360

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

125 130 135 140 145wavelength (A)

Refle

ctivit

y

200mW 80X

400mW 20X

800mW 1X

800mW 20X

post M7360

1.00E+00

1.00E+01

1.00E+02

1.00E+03

1.00E+04

1.00E+05

1.00E+06

1.00E+07

1.00E+08

0 1 2 3 4 5 6

2 thetain

tens

ity

800mW 20X

800mW 1X

400mW 20X

200mW 80X

ML damage from seen at high power setting used for substrate inspection. Need to decouple ML from substrate.

9 March 2009 10

0

10

20

30

40

50

60

70

Q1'08

Q3'08

Q1'09

Q3'09

Q1'10

Q3'10

Q1'11

Q3'11

Def

ect S

ensi

tivity

(nm

)Mask Inspection Roadmap

RFI JDA/UTP

RFI Funding Dock/UTPTool Development

Improvement

Current

Current Platform

3.0G Actinic Based

Actinic Tool Development Time

2.5G Optical Based System

2.5G Upgrade

ML

Sub

9 March 2009 11

Deposition Improvement Roadmap

0

10

20

30

40

50

60

70

Q3'08

Q4'08

Q1'09

Q2'09

Q3'09

Q4'09

Q1'10

Q2'10

Q3'10

Q4'10

Q1'11

Q2'11

De

fect

sca

led

to 1

8n

m

Shield Improvement

Shield Improvement

Target Upgrade

Target Upgrade

Next Gen Dep Tool

Next Gen Dep Tool

Process Skew on Parameter

Process Skew on Parameter

Current Level

9 March 2009 12

Summary

• Defect free mask blank is a critical component for the timely insertion of EUVL.

• MBDC at SEMATECH continues focused effort on achieving defect free blank.

• Progress on defect reduction, however substrate pit and inspection capability remains top priority to resolve.