Silicon Photonics100G products

Kirk Ouellette

Si-Photonics using SOI is the answer 2

Si-Substrate

BOX

SOI

Light confinement in SOI

nSiO2=1.45

nSiO2=1.45

nSi=3.5

SiO2

• Si is transparent in the telecom window : 1.3µm-1.55µm

• SOI substrate is used to confine the light into SOI using the optical index difference between the SiO2 BOX (n=1.45) layer and the SOI layer (n=3.5), allowing very compact optical structure definition

• Waveguides loss 1.9dm/cm

166nm

32nm

306nm

Typical SOI-Photonics Thicknesses 3

<100nm

0.1 µm 0.02 µm

<10nm

0.72 µm

BO

XS

OI 300nm

SOI Photonics PD-SOI or SOI-FinFET UTBB-FDSOI Bulk

28nm,14nm,10nm 55nm, 28nm,20nm

22,14,10 nm FinFET

SOI 130nm,90nm,45nm

• BOX thickness should be >0.5µm in order to avoid light leakage

• SOI thickness is usually between 0.2 to 0.5µm to allow proper light propagation

Why Silicon Photonics Now?Power, Cost and Complexity

• Silicon Photonics enables 3.5W system power required for QSFP28

• Simplified BOM due to quad channel integration

• Use of one CW (Continuous wave) laser

• Testing, high yield, and reliability is well known with silicon

4

QSFP28 Module using discrete Optics

Why Silicon Photonics Now?Speed and Cable length

5

1Mbps 1Gbps 1Tbps 1Pbps

10cm

1m

10m

100m

1km

10km

100km

1cm

Reach

Data Rate

Copper

Optical

VCSEL

Silico

nP

ho

ton

ics

Large Datacenter

Datacenter

On-Board

Intrachip

[1] Krishnamoorthy, et al., IEEE J. Selected Topics in Quantum Electronics, vol. 17, no. 2, 2011

Backplane

PSM4

100G~400G

Microsoft

Facebook

ST – 2 Chip solution 100G

`3D Silicon Photonics` - STsP10028

100G PSM4 MSA

• Generally targeting 500m but applications are expected to 2km

PSM4 MSA specification – Sept 20147

Integration Strategy 8

Opto-Electronic IC

Electronic IC= CMOS or BiCMOSCu-pillar

Independent evolution for optimization of technology platform (process flow & design environment)

Opto-Electronic System

Photonic IC

Ni-pillar

3DIntegration

Opto-Electronic System = Photonic IC + Electronic IC

300mm Photonics

Tool Set Portfolio

300mm PHOTONICS

Technological Platform

300mm Process Integration

Etch

SiGe & Ge

epitaxies

193 nm

Litho

Low T° Dep

Ni,Co,Pt silicide

193 i

Existing Tools

� High volume

� Sub-90nm CMOS node tools

� 193nm/193i photolithography

� Improved process control versus 200mm

9

ST`s 3D Approach

Mono-modal

Fiber

CW LASER

Mono-modal

Fiber

10

3D structure scales for integration

Silicon PhotonicsInterposer with TSV

ASIC EIP

Optical Interposer with TSV and Photonic Control IP embedded into ASIC

Optical Interposer with TSV and Separated Photonic Control IC

ASIC EIC

Silicon PhotonicsInterposer with TSV

SiPho IC

SiPho + Interposer

Optical Coupling

Classical Interposer

ASIC OIC

EIC

3D Silicon Photonics integrated on Classic Interposer

Optical Coupling

OIC

EIC

3D Silicon low cost Package and IO coupling

OIC

EIC

SiPho 3D

3D Silicon

FD-SOI for ASIC?

EIC and OIC done in

Crolles 300!

ST Manufacturing – Key Data 12

Crolles200

Wafers 200 mm

Down to 120 nm

Production Capacity :30k wafers/month

Crolles300

Wafers 300 mm

Down to 10 nm

Production Capacity :Present: 15k wafers/monthFuture: 30k wafers/month

At ST Crolles, we manufacture 5 million silicon chips every day

3D-Photonics Assembly and TestST development

13

40µm

EIC PIC

EIC

PICOEWS

3D EOWS Concept14

1/22/2016

Electric Test

Cantilever probecard

Standard DC + Digital testing capability, without limitations vs EWS

Standard probing operation, including wafer mapping, load/unload, OCR, networking etc.

Special anti-vibration environment (modified ATE and specific prober solution)

Optical Test

Optical fiber array head connected to laser instruments

Tunable CW laser source(s), driven by ATE test program during test execution

Power meters, triggered by ATE test program during test execution

Dynamic die alignment (x-y-z) through optical loop and proximity sensor

Optical tests integrated in the test program (EO stdf datalog output)

QSFP Package

STsP10028 – Ready for 100G PSM4 - QSFP28

OIC

EIC

3D Silicon PhotonicsSTSP10028

CW

1.3um CW Laser

8 x SMF output

OIC

EICCW

Fiber Attach

FA

FA

• Targeted insertion loss in Tx – 15-16dm

• 13 dBm CW laser is recommended by PSM4 MSA

Summary

• ST has created a silicon Photonics 3D structure for 100G PSM4 modules

• ST`s silicon photonics process technology is perfectly suited for next generation 100G and 400G

• PSM4 Samples will be available in 2016 to start module development

16

Thank you