silicon photonics: advances in foundry capability for · pdf file ·...

Silicon Photonics: Advances in Foundry Capability for Next Generation Systems

July 12, 2016

GLOBALFOUNDRIES Capacity: ~7M Wafers/Yr*

2

28nm, ≤ 14nm 45nm–22nm 180nm–40nm350nm–90nm90nm–22nm

TECHNOLOGY

CAPACITY IN WAFERS/MONTH

SingaporeDresden,

Germany

Malta,

New York

East Fishkill,

New York

Burlington,

Vermont

14,000 (300mm) 60,000 (300mm)68,000 (300mm)

93,000 (200mm)Up to 60,000 (300mm) 40,000 (200mm)

*200mm Equivalents*Active in SiPh technology

3GLOBALFOUNDRIES Confidential

10/25G

Lin

e R

ate

Phase 3

90nm 90WG

SOI Monolithic Integration

Modulator (Traveling Wave MZI)

Ge Photodetector (PIN)

Phase shifter (Thermal & Hi speed)

Edge V & top grating coupling

Full optical passives offerings

CMOS RVT, LVT 3.3V I/O, prec R

BEOL Varactors, Inductors, T-lines

Full PDK enablement

200mm baseline

300mm transfer

25G updates

90nm 90WG +

Photonic design enhancements

4 channel CWDM Filter DEMUX

4 channel CWDM Filter MUX

Polarization splitter/rotator

Modulator (Traveling Wave MZI) (25Gbps)

C4 / Cu Pillar options

NRZ / PAM4

300mm baseline

200mm early learn

50G +

45nm 45WG

300mm

Leverage 45nm SOI RF platform

Monolithic or Hybrid Integration

Ge Epi PD, Dual Tsi

2.5D TSV options

NRZ / PAM4 / QAM

Phase 1 Phase 2

Monolithic Silicon Photonics Technology

• Monolithic Silicon Photonics Development

– Phases: 300mm technology, components for higher order modulation for higher performance systems

Photonics Industry

• Application drivers

– Industry shift from technology to product discussions

– Data Centers, Wired/Wireless infrastructure SMF SAM >100M units 2020

• 5G, small cell,chip-to-chip interconnect upsides

• Photonics industry barriers

– 4 competing MSAs with two competing fiber standards (PSM4, cWDM)

– Datacom segment proprietary interface standards and solutions

– Net: unit scale does not correlate to a foundry scale

• Technology Developments

– New photonic components for larger optical link budgets, higher data rates

• Monolithic photonic systems with first level OSA

• NRZ, PAM4, *QAM formats for higher data rates

• Design eco-system – PDKs for co-design and simulation

GLOBALFOUNDRIES Confidential 4

Silicon Photonics Monolithic TechnologyGLOBALFOUNDRIES technology and foundry access

Silicon Photonics Platform

•All function except light source integrated into Si foundry flow

•Question of Silicon Photonics fit into Si foundry: Demonstrated

Photonics IC

6

Ge Detectors

(Active)

Waveguides

(Passive)

Modulators

(Active)

Gratings/Couplers

(Passive)

Fiber Edge Coupler(Passive)

RFCMOS

(Active)

*Graphics: GF, IBM, IME

Monolithic integration of CMOS/ RF/MEMS control with photonicsMasks: 34 (CMOS) + (13) SiPh + 3 (packaging). NFET ft>150GHz

• >25Gbps SMF cWDM >2km reach (IBM 2015)

90nm Silicon Photonics Platform

7

Silicidation

Cu back-end wiring

FEOL CMOS FLOW

✓ Shared mask levels and modules

✓ Minimal additional photonics modules

MODULATOR

DETECTOR

FBEOL

packaging

structures

PACKAGING STRUCTURE

Source/drain

activation

Gate formation

Well

implants/activation

Shallow trench

isolation

Si Photonics 90nm/200mm Process Architecture


• Optical TX/RX on same silicon die

– Monolithic LA/TIA + photo diode, MZi, couplers

– Control – ADC/DAC, MCU,SPIE, …

– Very low interconnect parasitics and high intrinsic frequency performance – receive sensitivity

Silicon Modulator Ge Photodetector

Laser light source

external or integrated

Driver Amplifier

PHOTODETECTOR

MODULATOR

El.SignalEl.Signal

Fiber

+ CMOS Circuits

Complete Optical Link

Photo IBM

Photo IBM

+ CMOS Circuits

Driver

MODULATOR

Amplifier

PHOTODETECTOR

Si Photonics 90nm/200mm Technology


• 90nm process cross section optical and electrical integration

– Electrical and optical components in Cadence OA PDK

– 90nm RF/analog components (RF transistor layouts, precision resistors/capacitors, varactors, inductors, transmission lines, ..)

Ge detector Modulator

CMOS

Si Photonics 90nm/200mm Design Kit


• Cadence 6.1.5.507

– Co-design of electrical and optical components in a cadence PDK

– Thermal effects modeled

• Tool and model highlights

– MMSIM (spectre) 11.1.0.576/ISR17

– Calibre DRC/LVS/xRC

– Waveguide path tool

• Waveguide layout tool including bends,tapers

• Generates schematic symbol for simulation and extraction

• CAD flow of combined E/O is differentiating in the industry

MZI Modulator

Waveguide bend

Path tool Mode

converter

Traveling Wave Mach Zender 25Gb/s


MZI: Higher Order Modulation


• Segmented MZi LSB/MSB topology – PAM4 -2X higher symbol rate

• 50Gbps symbol rate with 25Gbaud line rate

– BER < 10-12 without FEC

– ER 6 dB

Fiber Alignment: V-Groove + Mode converters


• Far BEOL modular process for lateral fiber attach

– TMAH selective mask and etch

– Vertical grating couplers also available for optical input/test

RX: Receivers


• Lowest input referred noise: lowest system interconnect capacitance

– Self-biased inverter, CML stages

– Limiting amplifier: Cherry-Hooper gm-Zt 6-7 KOhm gain

– 28.5 Gbaud 400mV pk-pk extracted eye

– BER <10-12 with 58uA p-p sensitivity

– -10.8dBm OMA for 0.7A/W photodector sensitivity

Photonic Components: PDK: 10G and 25G


Key updates: WDM MUX/deMUX and PSR – wavelength and polarization diversity

Photonic

Passive

Elements

(optical only)V0.04_0.0

Aug 2016

V0.04_1.0

YE16

Device Name PCELL NameAlpha4 Alpha4.1

Straight Waveguide

(8 channel model) wgrx8 X X

90 Degree Bend

Waveguide bendrx X X

90 Degree Bend

Waveguide, (4

channel model) bendrx4 X X

90 Degree Bend

Waveguide, (8

channel model) bendrx8 X X

Linear Taper

Waveguide taperrx X X

Linear Taper

Waveguide (4

channel model) taperrx4 X X

Linear Taper

Waveguide (8

channel model) taperrx8 X X

4 channel WDM

Filter DEMUX (MZI

Lattice) wddemux4 X

4 channel WDM

Filter MUX (MZI

Lattice) wdmux4 X

Photonic

Passive

Elements


Aug 2016

V0.04_1.0

YE16


Polarization

splitter/rotator psr X X

Polarization Splitter

& Rotator (4

channel model) psr4 X X

Polarization Splitter

& Rotator (8

channel model) psr8 X

Waveguide

crossings in RX crossrx X X

Directional Coupler dcoupler X X

Directional Coupler

(2 input model) dcoupler2 X X

Wavelength

independent 3dB

coupler widcoupler X

Wavelength

independent 3dB

coupler (4 channel

model) widcoupler4 X

Absorber (for

waveguide

termination) absorber X X

Photonic Components: PDK: 10G and 25G


Key updates: PAM4 Modulator for 2X increase in data rates

Photonic

Electrooptic

Elements

(optical and

electrical)V0.04_0.0 Aug

2016

V0.04_1.0

YE16


Modulator

(Traveling Wave

MZI) (10Gbps) modulator10 X X

PAM4 Modulator modpam4 X

Ring Modulator modring

Ge

Photodetector

(PIN) detector X X

Dual Ge

Photodetector

(PIN) dualdet X X

Si PIN (3 in 1) sipin X

Phase shifter

(Thermal) phasetherm X X

Phase shifter

(High speed,

reverse biased

PN diode) phasepn X X

Photonic

Packaging and

Inline Test


Aug 2016

V0.04_1.0

YE16


Modulator (Traveling

Wave MZI)

(10Gbps) modulator10 X X

Vertical grating

incoupler (PC only) iograt X X

Ideal IR light source irsource X X

In-line optical

power/phase meter irmeter X X

In-line optical

power/phase meter

(4 channel) irmeter4 X X

In-line optical

power/phase meter

(8 channel) irmeter8 X X

Reference Design4x25 Gbaud cWDM 100Gbps monolithic solution

Si Photonics 90nm/200mm Technology


• 100G (25G 4l cWDM) integrated optical transceiver in 90nm nano-photonic process

– 1291-1311nm, self aligned fiber coupling to the chip

• Power budget per lane: 110mW RX, 135mW TX, 100mW heaters

WDM DeMUX’s

Receiver TIA + LA Circuits

Self-aligned fiber coupling

WDM MUX

Polarization management

Modulators

Input of external lasers

Transmitter Circuits1291nm

1331nm1271nm1311nm

IBM 100G Tx/Rx

25Gx4λ

Si Photonics 90nm/200mm Prototype Results


• 100G (25G x 4l cWDM) integrated electro-optical transceiver

– O-band 1260-1355um,RX = -10.8dB OMA (25Gbps BER<10-12)

– TX = VL=1.61Vcm, MZI loss = 7.2dB/cm, FOM=12 VdB

Summary


• Silicon photonic industry shift from technology to product discussions

– Data Centers, Wired/Wireless infrastructure drive adoption

• GLOBALFOUNDRIES integrated technology and IP ecosystem

– 90nm monolithic RFCMOS + silicon photonics + fiber coupling

– Full Cadence PDK for E/O co-design, polarization, temperature, and wavelength parametrics

– Demonstrated: integrated 25 Gbaud 100Gbit cWDM O-band

• Developments for next generation higher data-rate systems

– Specialized components for higher order modulation (PAM4, 16/64QAM)

– Optimized components for polarization and wavelength diversity

– Product Design Kit: co-design of electrical and photonic components

The information contained herein is the property of GLOBALFOUNDRIES and/or its licensors.

This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice.

GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners.

© GLOBALFOUNDRIES Inc. 2016. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.

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