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Silicon Photonics Photo-Detector Announcement
Mario PanicciaIntel Fellow
Director, Photonics Technology Lab
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• Intel’s Silicon Photonics Research• 40G Modulator Recap• 40G Photodetector Announcement• Vision of Future Terascale Platforms• Summary
Agenda
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Photonics: The technology of emission, transmission, control and detection of light (photons) aka fiber-
optics & opto-electronics
Today: Most photonic devices made with exotic materials, expensive processing, complex packaging
Silicon Photonics Vision: Research effort to develop photonic devices using silicon as base material and do
this using standard, high volume silicon manufacturing techniques in existing fabs
Benefit: Bring volume economics to optical communications
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Intel’s Silicon Photonics Research
Electrically Electrically Pumped Pumped Hybrid Hybrid
Silicon laserSilicon laser(September 2006)
40 Gb/s 40 Gb/s (Jul (Jul ’’07)07)
Achieved 40 Gb/s for most devicesNext: Focus on integration
40 Gb/s 40 Gb/s TODAYTODAY
Continuous Wave Continuous Wave Silicon RamanSilicon Raman
LaserLaser(Feb (Feb ‘‘05)05)
1GHz 1GHz ( Feb ( Feb ‘‘04)04)
10 Gb/s 10 Gb/s (Apr (Apr ‘‘05)05)
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40Gb/s Silicon Laser Modulator
• Encodes data on a light beam at 40Gbps
• Fastest Si modulator – on par with fastest modulators
available commercially
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Guiding Light
Ex: Rib waveguideSilicon
oxideSilicon
oxide
Si Bandgap
Communications
Intel LithoIntel Lithotransistor
Silicon is Transparent to infra Red light (λ>1.1um)
Can guide light in Silicon
But does not absorb/detect
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Ex: Rib waveguideSilicon
oxideSilicon
oxideGermanium
big
ger
is
bet
ter
Bandgap engineering… i.e. add another material
Ge is the most promising candidate:
• High absorption for wavelengths of interest
• CMOS compatible
How do we absorb light: Use Germanium
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Challenge: Strain• Crystal structure of germanium is 4% larger than silicon. • This introduces strain when Ge is grown on Si.• Result crystal lattice dislocations excess noise
aaGeGe ~ .565 nm~ .565 nm
aaSiSi ~ .543 nm~ .543 nm
Bulk Films of Si and GeBulk Films of Si and Ge Strained SiStrained Si11--xxGeGex x on Sion Si
misfitmisfitdislocationdislocation
Relaxed SiRelaxed Si11--xxGeGex x on Sion Si
Misfit dislocations typically create threading dislocations whicMisfit dislocations typically create threading dislocations which degrade device performance h degrade device performance --dark current (dark current (IIdkdk) goes up) goes up..
By optimizing the thermal growth process parameters we can minimize defects impact.
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Photodetector Design
N-GeN-Ge
Rib waveguide
SiO2 (BOX)
Passivation
P-contact
Si
Si (Substrate)
N-contact
P-contact Ge
Rib waveguide
SiO2 (BOX)
Passivation
P-contact
Si
Si (Substrate)
N-contact
P-contact Ge
SEM Cross-Section
i-Ge
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World’s best Waveguide Photodetector Performance
• 40 Gb/s operation• 95% efficient (up to λ ~1.56um)
• < 200nA of dark current
Results:
Performance combines• Speed
= bits per second• Efficiency
= % of photons detected• Noise
= “dark current”)
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Experimental Results:
1G 10G-9
-6
-3
0
3
Nor
mal
ized
resp
onse
(dB
)
Frequency (GHz)1 10
~ 31 GHz roll-off
31 GHz Optical Bandwidth 40 Gb/s Data transmission
World’s Best Performing GeWaveguide Photodetector
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Tera-leap to Parallelism: EN
ERG
Y-E
FFIC
IEN
T P
ERFO
RM
AN
CE
TIME
Instruction level parallelism
Hyper-ThreadingThe days ofThe days ofsinglesingle--core chipscore chips
Dual Core
Quad-Core
More performanceMore performanceUsing Using lessless energyenergy
10’s to 100’sof cores Era ofEra of
TeraTera--ScaleScaleComputingComputing
All this compute capability may require high speed optical links
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MemoryMemory MemoryMemory
Future Physical I/O for a Tera-scale Servers
MemoryMemory
TeraTera--scale CPUscale CPU
MemoryMemory
CPU 2CPU 2
Memory:Memory: PackagePackage3D Stacking3D Stacking
ChipChip--Chip:Chip: Fast CopperFast CopperFR4 or Flex cablesFR4 or Flex cables
Integrated Tb/s Optical ChipIntegrated Tb/s Optical Chip
CoreCore--Core: On DieCore: On DieInterconnect fabricInterconnect fabric
Tb/s of I/O
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Future: A Terabit Optical Chip
25 hybrid lasers
25 modulators at 40Gb/s
Multiplexor
Optical Fiber
Silicon Photonics for ComputingSilicon Photonics for Computing
A future integrated terabit per second optical link on a single chip
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Integrating into a Tera-scale System
This transmitter This transmitter would be combined would be combined with a receiverwith a receiver
Which could then be built into an Which could then be built into an integrated, silicon photonic chipintegrated, silicon photonic chip
RxRx
TxTx
Silicon Photonics for ComputingSilicon Photonics for Computing
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Integrating into a Tera-scale System
This integrated silicon photonic This integrated silicon photonic chip could then be integrated chip could then be integrated into computer boardsinto computer boards
And this board could be And this board could be integrated into a Teraintegrated into a Tera--scale systemscale system
Silicon Photonics for ComputingSilicon Photonics for Computing
Integration of photonic devices will be critical infuture applications.
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Summary
Worlds Best performing Silicon Germanium Photo-detector- Capable of operating at 40 Gbps- Low dark current and great responsivity- Details to be presented at Group IV conference Tokyo Japan Sept 20th
Background- Silicon is transparent to Infrared light and good for routing light- Germanium must be added to allow Silicon to absorb light- Intel used a unique process to grow Germanium on Silicon and produce
an efficient Silicon Germanium photo-detector
Vision- Build highly integrated Si Photonics chips for optical communication- Build using high-volume, low cost manufacturing processes- Enables terabit optical links
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Links
Silicon Photonics at Intel site -http://techresearch.intel.com/articles/Tera-Scale/1419.htmBlog about recent modulator advance -http://blogs.intel.com/research/2007/07/40g_modulator.html
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What We are Announcing
Worlds Best performing Silicon Germanium Photodetector- Capable of operating at 40 Gbps- Low dark current and great responsivity- Details to be presented at Group IV conference Tokyo Japan Sept 20th
Background- Silicon is transparent to Infrared light and good for routing light- Germanium must be added to allow Silicon to absorb light- Intel used a unique process to grow Germanium on Silicon and produce
an efficient Silicon Germanium photo-detector
Vision- Build highly integrated Si Photonics chips for optical communication- Build using high-volume, low cost manufacturing processes- Enables terabit optical links for tera scale platforms
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DC Photodetector Performance
1500 1530 1560 1590 1620
20
40
60
80
100
50 μm long PD 100 μm long PDQ
uant
um e
ffici
ency
(%)
Wavelength (nm)-5 -4 -3 -2 -1 0 1
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
Dark current Photocurrent
Cur
rent
(A)
Voltage (V)
• Dark current of photodetector is still below noise floor of amplification circuitry.
• Quantum efficiency is excellent at ~95%.