Silicon Microstrip detectorSingle sided and double sided

K.Kameswara rao, Tariq Aziz , Chendvankar , M.R.Patil　 Tata institute of fundamental research , Mumbai , India

Y.P.Prabhakara 　 Rao　　、 Y. Rejeena RaniBharat Electronics limited , Bangalore , India

　　Ｄｅｔｅｃｔｏｒ　ｓｐｅｃｉｆｉｃａｔｉｏｎｓ

Ｆｉｒｓｔ　Ｂａｔｃｈ　　：　＜１１１＞　，　Ｒｅｓｉｓｔｉｖｉｔｙ　２ｋ－４ｋｏｈｍ　　Ｓｉｎｇｌｅ　ｓｉｄｅｄ、　Ｐｒｏｔｏｔｙｐｅ

Ｓｅｃｏｎｄ　Ｂａｔｃｈ　：　＜１００＞　，　Ｒｅｓｉｓｔｉｖｉｔｙ　１０ｋ－２０ｋｏｈｍ(Ｓｉｎｇｌｅ　ｓｉｄｅｄ　ａｎｄ　ｄｏｕｂｌｅ　ｓｉｄｅｄ　ｄｅｔｅｃｔｏｒｓ　）

Ｔｈｉｒｄ　Ｂａｔｃｈ　　　：　＜１１１＞　，　Ｒｅｓｉｓｔｉｖｉｔｙ　９ｋ　－　１２ｋｏｈｍ、Ｓｉｎｇｌｅ　ｓｉｄｅｄ

Ｆｏｕｒｔｈ　Ｂａｔｃｈ　　：　＜１１１＞　，　Ｒｅｓｉｓｔｉｖｉｔｙ　２ｋ　－４ｋｏｈｍ　Ｓｉｎｇｌｅ　ｓｉｄｅｄ

　

First Batch :• Main Features of the Detector :

11 sets of different width and pitches in one detector

Minimum Strip width of 12microns and strip pitch of 65microns for about 7.4cms long on a 4” silicon wafer.

AC coupling, Common Bias via Polyresistor High value of resistance (1.5M to 3.5Mohms ) achieved within less than 500microns of length and width of 30 to

60microns

Wafer : n type Silicon, 4inch Diameter, 300 micron thickness, FZ type

Orientation : <111>

Resistivity : 5 Kohm-cm

No. Of Independent sets of detectors : 11

Type of implantation for strips : p+

No. strips per set : 32

Polysilicon resistor value: 2 to 4 Megaohms

Dark Current ( at 100V reverse voltage ) max : 5 Microamps

MASK DESIGNS

Mask 1 : p+ Mask 5 : Opening Contacts over dc pad, bias pad Mask2 : Capacitor (Sio2) Mask 6 : MetalMask3 : Polycontact opening Mask 7 : Protective layer Mask4 : Polyresistor

First Batch

Actual Silicon Microstrip Detector

Geometry : 76mm * 47mm

Microscopic view of SILICON MICROSTRIP DETECTOR

Bias padAc padDc pad

poly

I - V Characteristics of Silicon Microstrip Detector

0

200

400

600

0 50 100 150 200 250 300 350 400 450

Voltage

Cu

rre

nt

( n

ano

am

ps

)

Set 1

Set 2

Set 3

Set 4

Set 5

Set 6

Set 7

Set 8

Set 9

Set 10

Set 11

C - V Characteristics

0

50

100

150

200

250

0 20 40 60 80 100 120

Voltage

Ca

pa

cit

an

ce

( p

f )

Set 1

Set 2

Set 3

Set 4

Set 5

Set 6

Set 7

Set 8

Set 9

Set 10

Set 11

Second Batch : Detectors Produced : 1) SSD - 5 No’s 2) DSSD – SL - 10 No’s 3) DSSD – DL - 10 No’s

• Wafer crystal orientation : < 100 >• Type : FZ• Wafer thickness : 300 µm• Size : 4 inch• Resistivity : > 10 to 20 Kohm-cm• Breakdown voltage : > 300V• Polysilicon resistor value : > 4 Megaohms• Total Dark current : <= 2 microamps @ 100V• Area : 79600 x 28400• Effective Area : 76800 x 25600

Wafer specifications :

P side : No. of Masks : 10 ( double metal structure )• Number of strips : 1024 Number of Readout strips : 512 Pitch : 75 P+ strip width : 50 P+ strip length : 25600 N side : No. of Masks : 8• Number of strips : 512 Pitch : 50 N+ strip width : 12 N+ strip length : 76800 P stop with ATTOL structure• AC pad accessibility of the strips will be available with

double metal structure and as well as without double metal structure ( provision for bonding with kapton cable)

Double sided silicon detector specifications

0 20 40 60 80 100 120 140 1600

50

100

150

200

250

300

350

I - V Characteristics of SSD <100> Res. 10k to 20k Series1

Series3

Series5

Series7

Series9

Voltage(volts)

Curr

ent

(uA

)

0 20 40 60 80 100 12070

90

110

130

150

170

190

210

230

C - V Charcteristics of SSD <100>

SSD#56 SSD#57 SSD#49 SSD#63 SSD#29

Voltage (volts)

Capacitance(pf)

Double-sided Silicon Microstrip detector　

n+

p+

bulk n

Al

p+ stopper

SIO2

SIO2

Al

Advantages : Two dimensional positional information

0 20 40 60 80 100 1200

20

40

60

80

100

120

140

I - V Characteristics of DSSD -SL <100> Res.10k to 20k Series1

Series3

Series5

Series7

Series9

Series11

Series13

Series15

Series17

Series19

Voltage(volts)

Curr

ent

(uA

)

0 20 40 60 80 100 12050

60

70

80

90

100

110

120

C - V Characteristics of DSSD - SL

DS-SL#44 DS-SL#46 DS-SL#10 DS-SL#65 DS-SL#41 DS-SL#16 DS-SL#66 DS-SL#28

DS-SL#18 DS-SL#42

Voltage (volts)

Capacitance (pf)

DSSD with double metal ―P –side design with all masks

Photo of P - side Via’s and Metal 2

Via’s

Photo of N side AC pads

0 20 40 60 80 100 120 140 1600

100

200

300

400

500

600

I - V Characteristics of DSSD - DL <100> Res. 10k to 20k

Series1Series3Series5Series7Series9Series11Series13Series15Series17Series19

Voltage( volts)

Curr

ent

(uA

)

0 20 40 60 80 100 120130

180

230

280

330

380

C - V Characteristics of DSSD - DL

DS-DL#36 DS-DL#32 DS-DL#32+ DS-DL#08 DS-DL#48 DS-DL#47 DS-DL#34

DS-DL#9 DS-DL#64 DS-DL#31

Voltage (volts )

Capacitance (pf)

0

50

100

150

200

250

300

350

0 50 100 150 200 250

Cu

rre

nt (

mic

ro a

mp

s )

Voltage ( volts )

I - V Characteristics comparision of ssd and dssd

SSD#63

DSSD-SL#28

DSSD-DL #31

0 20 40 60 80 100 120 140 1600

5

10

15

20

25

30

35

40

45

50

I - V Characteristics of SSD <111> Res. 9k to 12k Series1

Series3

Series5

Series7

Voltage (volts )

Curr

ent

(uA

)Third　 Batch

Response of silicon detector with 1064nm pulsed laser　 Tested with single sided detector

0 50 100 150 200 250 300 350 400 4500

100

200

300

400

500

600

700

Pulse height distribution

Series1

milli volts

No. of time occurred

0 50 100 150 200 250 300 350 4000

0.5

1

1.5

2

2.5

3

3.5

4

8004-5*8018-1*8018-2*8018-38004-78004-8

Reverse voltage ( volts )

cur

rent

( µ

amps

)

I － V characteristics of SSD with resistivity of 2-4kohm　（０３－０３－０９）

Fourth Batch

0 20 40 60 80 100 12040

50

60

70

80

90

100

110

120

8004-5* 8018-1* 8018-2* 8018-3 8004-7 8004-8

Reverse voltage (volts)

capa

cita

nce

( pf )

Ｃ－Ｖ　ｃｈａｒａｃｔｅｒｉｓｔｉｃｓ　ｏｆ　ｓｓｄ（０３－０３－０９）

Ｐｒｅｓｅｎｔ　ｓｔａｔｕｓ

Ｒｅｃｅｎｔｌｙ　ｄｅｖｅｌｏｐｅｄ　ｄｅｔｅｃｔｏｒｓ　ｈａｓ　ｔｏ　ｕｎｄｅｒ　ｇｏ　ｄｉｆｆｅｒｅｎｔ　ｔｅｓｔｓ。