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Tohru Mogami Photonics Electronics Technology Research Association (PETRA), Japan SOI Forum 2016 UoT 21/Jan/2016 SOI Forum 2016, UoT, 21/Jan/2016 Silicon Photonics Technology on SOI wafers for Optical Interconnect 1

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Tohru Mogami

Photonics Electronics Technology Research Association (PETRA),

Japan

SOI Forum 2016

UoT

21/Jan/2016

SOI Forum 2016, UoT, 21/Jan/2016

Silicon Photonics Technology

on SOI wafers

for Optical Interconnect

1

SOI Forum 2016, UoT, 21/Jan/2016

Acknowledgements

This work is partly supported by NEDO.

I appreciate the supports of the colleagues of

“Integrated Photonics-Electronics Convergence

System Technology” Project.

2

Outline

SOI Forum 2016, UoT, 21/Jan/2016

1. What is the issues of ICT world?

2. What is silicon photonics?

3. Integrated Photonics-Electronics

Convergence System Technology

Project & W/W R&D of Si Photonics

4. SOI Issues for Si Photonics

3

SOI Forum 2016, UoT, 21/Jan/2016

I. A. Young, et al., IEEE Communications Magazine, 48, 184-191 (2010)

What is bottleneck of LSI’s?

Bottleneck of LSI’s can be a bandwidth between chip-to-chip,

because effective bandwidth has been increasing by 2x performance

per 2 years and Tera-scale communication is required until 2015.

Both Scaling and performance are the challenge of the conventional

Cu/Low-k and assembling tech. We need new concept.

5

Outline

SOI Forum 2016, UoT, 21/Jan/2016

1. What is the issues of ICT world?

2. What is silicon photonics?

3. Integrated Photonics-Electronics

Convergence System Technology

Project & W/W R&D of Si Photonics

4. SOI Issues for Si Photonics

6

Si photonics & Building blocks

Light

source

Light

distributor

E/O

converter

Optical

wire

O/E

converter

Transmitter

circuits Receiver

circuits

Continuous light Optical signals

Electrical signals

Laser diode Silicon optical

waveguide Germanium

photodetector

Silicon optical

modulator

Light source integration

Photonics-electronics

integration

Silicon optical

splitter

SOI Forum 2016, UoT, 21/Jan/2016 7

OE device (photo-detector)

I/O device with low-loss

Wave Guide

EO device (modulator) Silicon photonics is the technology to

integrate photonic systems which

mainly use silicon as optical devices.

1. SOI Wafer

SiO2

Si

Si 基板

SiO2

Si

Si 基板

SiO2

Si

Si 基板

レジスト

SiO2

Si

Si 基板

SiO2

Si

Si 基板

レジスト

SiO2

Si コア

Si 基板

SiO2

Si コア

Si 基板

2. Si Patterning 3. Si Etching 4. SiO2 Deposition

SiO2

Si コア

SiO2

Si 基板

SiO2

Si コア

SiO2

Si 基板

Si Core

SiO2 Crad

Waveguide by CMOS Technology

Si waveguide is made from SOI(Si on

Insulator) layer by dry etching

Low cost and highly reproducible fabrication by using CMOS process technology

SOI Forum 2016, UoT, 21/Jan/2016

T. Horikawa, FOE2013

8

Optical Modulators with Side-wall Gratings

Fabricated optical modulators

Schematic structure

SOI Forum 2016, UoT, 21/Jan/2016

ER = 4.3 dB 5 ps/div.

ER: dynamic extinction ratio

50Gbps 50Gbps

500nm

60nm

[S. Akiyama et al, JSTQE 2013]

9

Germanium PIN Photodetectors (PDs)

Schematic structure

[J. Fujikata et al, JJAP 2013]

PD Cross Section SEM Image

PD characteristics

Ge

SOI

BOX

Si sub.

SiO2 Al

Si cap

1mm

SOI Forum 2016, UoT, 21/Jan/2016 10

SOI Forum 2016, UoT, 21/Jan/2016

200 GHz spacing 16 channel

Si-wire AWG

[H. Okayama et al., Electronics Letters 2013]

WDM is Wavelength-Division Multiplexing.

Arrayed Waveguide Grating is one of WDM devices.

Wavelength-Division

Multiplexing (WDM)

Transceiver

WDM for more high-performance

11

Outline

SOI Forum 2016, UoT, 21/Jan/2016

1. What is the issues of ICT world?

2. What is silicon photonics?

3. Integrated Photonics-Electronics

Convergence System Technology

Project & W/W R&D of Si Photonics

4. SOI Issues for Si Photonics

12

PECST Pj in FIRST Program (Finished)

1

10

100

1000

0.1 1 10 0.01

300pin-MSA

(10Gx1)

QSFP(‘08)

SNAP12(IBM ‘04)

POP4(‘05)

AOC etc.

PETIT(NEC ‘08)

Inter-Board

XFP (10Gx1)

PODAvago PETIT2(NEC‘10)

LAN・WAN

Light Peak(Intel ‘10)

Luxtera

LightWire

Luxtera

Inter-chip

1 / Transceiver Footprint (cm-2)

Bandw

idth

(G

bps)

Inter-Rack

Bandwidth density

2012

12.5Gbps/ch

6.6Tbps/cm2

2012

12.5Gbps/ch

6.6Tbps/cm2

2011

5Gbps/ch

3.5Tbps/cm2

2011

5Gbps/ch

3.5Tbps/cm2

This PECST Pj promotes research and development of these

innovative technologies for photonics-electronics convergence to

realize an on "On-chip data Center" by 2025.

Term: FY 2010~2014

SOI Forum 2016, UoT, 21/Jan/2016 13

00

2013

30 Tbps/cm2

SOI Forum 2016, UoT, 21/Jan/2016

Outline

Title: Integrated Photonics Electronics Convergence Technology Project

Sponsor: METI (FY2012), NEDO (FY2013 - ).

Organization: PETRA

Project Leader : Yasuhiko Arakawa, Professor of the University of

Tokyo

Budget: 30B¥/10 years (Plan), 2.7B¥/2013

Term: FY 2012~2021

# of researchers: 120

Member companies:

AIST, Fujitsu, Furukawa Electric, NEC, NEL, NTT, OITDA, OKI,

Toshiba

Joint research organization:

Univ. of Tokyo, Kyoto Univ., Tokyo Institute of Technology,

Yokohama National Univ., WASEDA Univ.

FOE2014, 2014/April/16 14

SOI Forum 2016, UoT, 21/Jan/2016

5cm

Next generation

server board

Photonics electronics

convergence interposer

50cm

Optical waveguides

between chips

LSI

Rack-mounted server Photonics electronics

convergence server

Optical wiring

on board

Objective

Promote creation of new functions from integration and packaging

of key tech’s which take advantages of characteristics of optical

circuits to realize downsizing and power-reduction of ICT equipment,

and prove effectiveness of optical wiring at system level as a

forerunner and target to achieve its commercialization.

15

SOI Forum 2016, UoT, 21/Jan/2016

2012 2014 2018 2020 2022

0.1T

0.3T

1T

10T

3T

Sy

stem

per

form

an

ce

1st stage 2nd stage 3rd stage

(bps)

Interposer w/

Photonics

Electronics

IntegrationLSI package w/

Optical cableOptical I/O

Core

AOC LSI & Package Server on package

Year

Project Roadmap

Key tech.

System tech.

Project organization to lead to commercialization based on key tech’s

Key tech ⇒ system tech ⇒ business

3 stages development w/ progressive strategies

Opt. IO core ⇒ LSI package w/ opt. cables ⇒ OE interposer

Key tech

To system

To business

Introduction to IT equipment's

System tech

FOE2014, 2014/April/16 16

SOI Forum 2016, UoT, 21/Jan/2016

2015 OFC Presentation

17

2015 OFC Presentation

18 OECC2015, Shanghai, 2015/June/28-July/2

SOI Forum 2016, UoT, 21/Jan/2016 19

2016 OFC (March 2016, Anaheim)

A Novel Transmitter Leveraging High-Speed Ultralow-Power

Modulation of a Si Microring Modulator by Eliminating Tuning Power

Tomoyuki Akiyama1, 2, Shinsuke Tanaka1, Teruo Kurahashi2, Hiroji Ebe2,

Shigeaki Sekiguchi1, 2

1. PETRA, 2. Fujitsu Laboratories Ltd.

WDM Interconnect targeted Si-Wire Optical Demultiplexers for Large

Manufacturing Tolerance, Low Voltage Tunability and Polarization

Diversified Operability

Seok-Hwan Jeong, Yohei Sobu, Shinsuke Tanaka, Takasi Simoyama, Yu

Tanaka, Ken Morito

PETRA

25-Gbps error-free operation of chip-scale Si-photonics optical

transmitter over 70℃ with integrated quantum dot laser

Kenichiro Yashiki, Kenji Mizutani, Jun Ushida, Yasuyuki Suzuki, Mitsuru

Kurihara, Masatoshi Tokushima, Junichi Fujikata, Yasuhiko Hagihara,

Kazuhiko Kurata

PETRA

Outline

SOI Forum 2016, UoT, 21/Jan/2016

1. What is the issues of ICT world?

2. What is silicon photonics?

3. Integrated Photonics-Electronics

Convergence System Technology

Project & W/W R&D of Si Photonics

4. SOI Issues for Si Photonics

20

SOI Forum 2016, UoT, 21/Jan/2016 21

Issue: RF Loss by Si Substrate

Y. Fukuda, et al., 2001, Oki Tech. Rev.

HR sub.

(>1kΩcm)

LR sub.

(20-30 Ωcm)

Frequency (GHz)

N. Li, et al., 2014, Symp on VLSI Tech & Circuit.

Transmission loss by Si substrate occurs in metal

interconnects with GHz signals.

Low-loss interconnect requires high-resistance Si

substrates, as well as Si substrates in SOI wafers.

However, there are no 12 inch high-resistance SOI

substrate.

Wavelength (nm)

Spectrum Shift, Δ𝜆

Tra

nsm

issio

n

DH Height Variation

DW Width Variation

Issue: Spectrum shift

SOI Forum 2016, UoT, 21/Jan/2016

Spectrum shift vs. Uniformity of SOI thickness

22

∆𝜆 =𝜆

𝑛𝑔𝑟

𝜕𝑛𝑒𝑞

𝜕𝑊∆𝑊 +

𝜆

𝑛𝑔𝑟

𝜕𝑛𝑒𝑞

𝜕𝐻∆𝐻

In case of TE mode in 440 x 220 nm WG,

∆𝜆~ 0.8 ∆𝑊 + 1.3 ∆𝐻

[T. Horikawa, 2014 Fall Meeting IEICE]

W

H

SOI Forum 2016, UoT, 21/Jan/2016

Summary

For ICT systems, one of today’s bottlenecks is the

bandwidth b/w LSI’s. Optical interconnect has the

advantage of the wider bandwidth characteristic than

metal electrical one.

Silicon photonics is the technology to integrate photonic

systems which mainly use silicon as optical devices.

Si photonics is a good application of More Than Moore.

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