ContactULVAC, Inc. URL:http://www.ulvac.co.jp/engMaterials Division − PM DepartmentChibaTomisatoPlant:10-1Misawa,Tomisato,Chiba286-0225,Japan TEL:+81-476-90-6111

Manufacturing contractor companyULVAC TOHOKU Inc. URL:http://www.ulvac-tohoku.com6-1-16NorthInter-IndustrialPark,Hachinohe,Aomori039-2281,Japan TEL:+81-178-20-2200ULVAC KYUSHU Corp. URL:http://www.ulvac-kyushu.com3313-1Yokogawa-choUe,Kirishima,Kagoshima899-6301,Japan TEL:+81-995-72-1114

Thiscatalogissubjecttochangewithoutnoticetoreflectperformanceimprovements,etc.

ULVAC, Inc., Materials Division

2801E/2012121000ADP

Contact:

ULVAC, Inc.

Sputtering Targets, Pellets & Wire (Vapor Deposition)

(For Flat Panel Display, Photovoltaic, Semiconductor, and Other Applications)

Sputtering Targets, Pellets & Wire (Vapor Deposition)

(For Flat Panel Display, Photovoltaic, Semiconductor, and Other Applications)

ULVAC, Inc.delivers totalsolutions formanufacturingequipmentneeded toproducesolarcells,FPD, integratedcircuitdevicesandcountlessotherproducts. Aspartofthesesolutions, theULVACglobalproductionsystemdelivershighquality,stableandlowcostsupplyofsputteringtargetsandvariousvapordepositonmaterialsbymakingmaximumuseofitsbestfeaturesasanequipmentmanufacturer.ULVACfacilitiesalsoinclude the Institute forSuperMaterialswhich isaprofessionalR&D facility fornewmaterials.ULVACalsoworkscloselywithnearbyproductionplantstosupportabroadrangeofneedsrangingfromtrialproductionofsamplesfornext-generationmaterials,tomaterialsupply,andtechnicalconsultationsonmassproductionlineoperation.

Enhanced global system support ranging from R&D of new materials to production and supply

ULVAC Materials Korea, Ltd.

ULVAC Materials (Suzhou) Co., Ltd.

ULVAC TOHOKU Inc. (contractor company)

ULVAC KYUSHU CORPORATION (contractor company)

ULVAC, Inc.Materials Division − PM Department(Chiba Tomisato Plant)

ULVAC MATERIALS TAIWAN, Inc.

ULVAC MALAYSIA SDN BHD.

ULVAC Materials Korea, Ltd.2-1,2-2B/L,Dangdong-Jigu,Munsanhightechindustrialcomplex,Dangdong-Ri,Munsan-Eup,Paju-Si,Kyonggi-Do,Korea413-902TEL:(+82)31-937-2900

ULVAC Materials (Suzhou) Co., Ltd.No.55,PingshengRoad,IndustrialPark,Suzhou,ChinaTEL:(+86)512-8777-0123

ULVAC MATERIALS TAIWAN, Inc.No.37,KeyaRd.,DayaDistric,TaichungCity42878,Taiwan(R.O.C)TEL:(+886)4-2565-8299

ULVAC MALAYSIA SDN. BHD.No.8,JalanGitar33/3,EliteIndustrialEstateOffJalan,Bukit,Kemuning40350,ShahAlam,Selangor,MalaysiaTEL:(+60)3-5121-4700

ChibaTomisatoPlant(left)andChibaInstituteforSuperMaterials(right)

ULVACMaterials(Suzhou)Co.,Ltd.(China)

ULVACMALAYSIASDN.BHD.(Malaysia)

ULVACMaterialsKorea,Ltd.(Korea)

2 3

Sputtering Targets for Flat Panel Display Applications

Good lower adhesion layer in low-resistance Cu wiring process • Ideal target fordeposition forming in low-resistancewiringprocesses.

(Stacking structureusesCu-Mg-Al alloy asadhesion layer for purecopperfilm)

• Goodadhesiontoglasssubstrates,oxidelayers(ITO,etc.),andsiliconsystemunderlayers(SiO2).

• Wetetchprocessingiseasybecausethecoppermaterial issimilartothewiring layermaterial. (Processing canalsouseetching solution(singlefluid)notcontaininghydrogenperoxideorfluoricacid.)

• Low-costprocess • Inexpensivetargetmaterial

Wiring resistance of various metal materialsCu............................2.2μΩcmMo..............................12-15μΩcma-Ta............................25μΩcmCr...............................20μΩcmAlAlloy.......................4-5μΩcmAl................................3-3.5μΩcmAg..............................3.0μΩcm

(Filmthickness:300nm)*Silver (Ag) has low bulk resistance but itsresistivityasathinfilmisthesameasaluminum(Al).

WE DO THE FOLLOWING to ensure our customers have stable, high quality materials needed for flat-panel displays Weobtainmaterialsfromsourcesallovertheworld Ourqualitycontrolfacilitiesandsystemsupportlargetargets(supportsG8

generationandevensuper-largeglasssubstrates) WeworkalongwiththeChibaInstituteofSuperMaterialstoensurethatideal

materialsareprovidedtocustomerproductionprocesses

We support sputtering targets for all fields including TFT, OLED (LTPS: Low-temperature polysilicon) and touch panels. Ultrasonic defect testers ensure meticulous quality assurance!

FPDmanufacturingequipmentsizesarebecoming largerand largersosputteringtargetdimensionsarealsoincreasing.ToimprovebothproductionequipmentandQAequipment,ULVAChas installed largeultrasonic testequipment tomakemeticulousdefect inspectionsofmaterialsandbondinginspections.UsingthisequipmenthashelpedULVACdrasticallycutdownonarcingduringsputteringanddeliverhighqualitytargets.

Sputtering Targets for Flat Panel Display Applications

Large Sizes & Diverse Display TypesIn the FPD (Flat Panel Display) Market, We Constantly Work to Maintain a Stable, High-Quality Material Supply

EnhancedInspectionSystemContributingtoQualityImprovement

CopperAlloyTarget

ProcessingMachineforLargeSizes

Cu-Mg-Al Alloy for Low-Resistance Copper Wiring

TargetsformanufacturingequipmentofFPDs

Four Major Features of ULVAC Targets•StableandenhanceddischargeduringdepositionthroughrefinementandhighdispersionofSnO2•Goodroughnessoftargetsurface•Highstabilityoffilmresistanceafterdeposition•Lowparticle

ITOTarget

Other Targets

ULVAC’s High Quality Targets Contribute to High-Functional Films for FPDs.

Product Line of ITO Targets

ITO Targets

Nb TargetsSi Targets

Item Analysismethod Allowablelevel Unit/composition In2O3-10wt%SnO2 In2O3-5wt%SnO2 In2O3-3wt%SnO2

Resistivity Fourprobemethod − mΩ•cm 0.14-0.17 0.12-0.14 0.12-0.14

Composition/

impurityelement

SnO2 XFS ±0.5 % 10.1-9.9 5.0 3.0Fe ICP-AES ≤30 ppm 5.8-2.2 5.6 5.9Cu ICP-AES ≤20 ppm 2.4-<1 1.8 1.0Pb ICP-AES ≤10 ppm <4 <4 <4Al ICP-AES ≤10 ppm 3.8-<1 1.5 1.0Ni ICP-AES ≤10 ppm 1.0-<1 <1 1.1

High-reliability metal bonding technologyLargesputtering targetsareveryheavyso technology forbonding toacoolingplate(backingplate)isextremelyimportant.ULVAChasinstalledbondingequipmenttosupportdepositionoflargerglasssubstrate,andrealizedanall-inclusivetargetsupplysystem.

Application Field Materials Manufacturing Method Purpose of Use

Lowtemperaturepoly-SiTFTmaterials Al(5N)&Alalloy Meltingmethod Wiringmaterials

Mobileterminals/monitors

Ti(4N5) Meltingmethod Electrode/barriermaterialsMo(3N) Powdersintering Electrode/barriermaterialsITO(4N) Powdersintering Transparentconductivefilms

Hightemperaturepoly-SiTFTmaterials AlSi(5N)&AlCu(5N) Meltingmethod Wiringmaterials

Rearprojectiontelevisions Ti(4N5) Meltingmethod Electrode/barriermaterials

High-definitionmonitors

WSi Powdersintering ElectrodematerialsITO(4N) Powdersintering Transparentconductivefilms

PDP Al(5N)&Alalloy Meltingmethod Wiringmaterials

PDP-TVCr(3N) Powdersintering Barrier/adhesionfilmmaterialsCu(4N) Meltingmethod WiringmaterialsITO(4N) Powdersintering Transparentconductivefilms

OLED(organicEL)materials ITO(4N) Powdersintering Transparentconductivefilms

MobileterminalsAg&Agalloy Meltingmethod Reflective/electrode

Mg Meltingmethod ElectrodeAl&Alalloy Meltingmethod Wiring/electrode

FED/SEDmaterials Al(5N)&Alalloy Meltingmethod Wiringmaterials

Monitors/TVs

Cr(3N) Powdersintering Barrier/adhesionfilmmaterialsVariouspreciousmetals(4N) Meltingmethod Wiringmaterials

ITO(4N) Powdersintering TransparentconductivefilmsNb(3N) Meltingmethod Electrodematerials

STN,colorfiltermaterials Si&SiO2(4N) Meltingmethod Insulating/

under-layermaterial

Mobilephones/terminals

Cr(3N) Powdersintering BMmaterialsAgalloy(4N) Meltingmethod STNreflectiveelectrodematerialsITO(4N) Powdersintering Transparentconductivefilms

AmorphousSi-TFTmaterials

Al(5N)&AlCealloy Meltingmethod WiringmaterialsCu(4N)&Cualloy Meltingmethod Wiringmaterials

Mo(3N) Powdersintering Electrode/barriermaterialsCr(3N) Powdersintering Electrode/barriermaterialsTi(3N) Meltingmethod Electrode/barriermaterialsITO(4N) Powdersintering Transparentconductivefilms

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Sputtering Targets for Photovoltaic Applications

Besidespromotingwidespreaduseofitsturn-keyor“ready-to-go”thin-filmsolarcellmanufacturingequipment,ULVACalsoprovidessputtering targetsmade frommaterials ideal forpassivation,bufferandelectrodelayersinamorphoussiliconsolarcellsandcompoundsemiconductor(CIGS)solarcells.ULVACrespondstoneedsfortransparent,electricallyconductivefilmswidelyusednotonlyinsolarcellsbutalsoinFPDandtouchpanels.Itprovidesforexample,GZOandAZOthinfilmsusingzincthatisaplentifulresourcecomparedtoITObyutilizinganall-inclusiveintegratedsystemrangingR&D,toproductionengineering,andglobalsupply.

AtULVAC, resourcerecovery,recyclingandreuseofvaluableraremetalsareimplementedinaproactivemanner topursueefficient use of sputteringtargets.

ULVAC Environmental Work

Resource Recovery

Recycle

Reuse

Sputtering Targets for Photovoltaic Applications

Sputtering Targets for Total Material Support of Thin Film Solar Cell Manufacturing Equipment

Thin Film Amorphous Silicon Solar Cell and Materials Thin Film Compound (CIGS) Solar Cell and Materials

Target ProductionMechanical Processing/ Bonding/Quality Check

Pure alloy/AlloyRefine/Ingot Making/ForgingMetal Rolling/Heat Treatment

Chemical Compound/Oxide/High Melting Point MetalPowder Composition/Forming

Drying/Sintering

USERDeposition Work

Recovery

Delivery of Materials

Delivery of Materials

Take Off Coating/Recovery

Refine Process of Target Materials

Surface Treatment

Ultra Clean Treatment

Recycled Shields

Recycling of Target Materials

Recycling of Shields

Used Targets

Used Shields

Residue

SecondarySmelting

PrimarySmelting Mine

Recycling of Sputtering Targets

CIGS

i-ZnOAZO (ZnO:Al)

Sputtering Method

Multi-Dimensional Vapor Method, Seleniding Method

Sputtering Method, etc.

Sputtering Method or MOCVD

Sputtering Method or MOCVDSputtering Method or MOCVD

Glass Substrate

Rear-Side Electrode

Light Absorption Layer

Buffer Layer

2~3μm

Transparent Front-Side ElectrodeHigh-Resistance Buffer Layer

ガラス基板

裏面電極

光吸収層

Mo

CIGS

バッファー層 CdS

2~3µm

i-ZnOAZO（ZnO:Al）

スパッタ法

多元蒸着法、セロン化法

スパッタ法等

スパッタ法またはMOCVDスパッタ法またはMOCVD

バッファー層（透明表面電極）n-type高抵抗

SUNLIGHT

Glass Substrate

SUNLIGHT

Electrode

TCO

a-Siμc-Si

Buffer Layer (Transparent Conductive Film)

Protective Layer

Ag

TCO

a-Si, μc-Si

TiRole of protective layer in preventing silver from oxidation and sulfuration

Sputtering EquipmentSCH-135B

CVD Equipment

Role of negative electrode in reflecting sunlight

Buffer layer between silver and silicon prevents alloying of silver and silicon GZO

0.2~0.3μmPLUS

TargetsforSolarCells

SolarCellIntegratedProductionLine

Silver/Titanium(Ag/Ti)Targets

Source:Prof.TokioNakada(CollegeofScienceandEngineering,AoyamaGakuinUniversity)Publicrelationsmagazine"ULVAC"(WerevisedFig.1onPage22of60thedition.)

GZOTarget

SCH-135

Materials AZO GZO Ag Ti Al alloy ITOPurity 3N- 3N- 4N 3N- 5N 4N

ManufacturingMethod Powdersintering Powdersintering Meltingmethod Meltingmethod Meltingmethod Powdersintering

MainApplication Transparentconductivefilms

Transparentconductivefilms

Reflectivefilmelectrodematerials

Electrodematerialprotectionfilms Wiringmaterials Transparent

conductivefilms

Materials Cu In CuGa Si SiO2 Mo ZnOPurity 4N 4N -35wt%Ga 5N- 4N 3N 3N

ManufacturingMethod Meltingmethod Meltingmethod Powdersintering Meltingmethod Meltingmethod Powdersintering Powdersintering

MainApplication Precursors Precursors Precursors Passivationfilms Protectionfilms Electrodematerials

Transparentconductivefilms

6 7

Sputtering targets must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes Low particle Good film uniformity High usage efficiency

To develop and produce high quality sputtering targets, Ulvac carefully evaluates which manufacturing method to use for each material to meet the following product quality goals.

Sputtering targets made using optimum manufacturing methods!ULVAChasdeveloped2 typesof tungsten targets fordifferentmanufacturingmethodsdependingontheparticularapplicationrequiredby thesemiconductorprocess.Onetypewasdeveloped forproductsatapuritygradeof5N isan inexpensiveandemploys thepowdersinteringmethod.High-purityCVDtungstentargetboastingapuritygradeof7NandusingCVD(chemicalvapordeposition)onsectionsrequiringhigherquality.ULVAC in thiswayprovides thecustomerwithhighperformancebyusing the ideal targetmanufacturingmethodtomeetsspecificationsneededforaparticularsemiconductorprocess.

Low-particle targetsULVAChasdevelopedsputtering targets thatsuppressgenerationofparticlesthatcanbethesourceofproblems in thesputteringprocess.Gaseouselementsareone factor incausingparticle emissions especially in aluminumtargetsandweareworking to loweremissionsbyutilizingavacuummeltingmethod in therefiningandingotpurificationprocesses.

Attaining high uniformity by adjusting the metal microstructureULVACusesmanufacturingprocesses thatensurehighuniformityanda finemetalmicrostructure inmostof its targets forsemiconductorproductsincludinghighpuritycobalttargetsandtitaniumtargets.Utilizingafinemetalmicrostructurehavingahighdegreeofuniformityforexampleallowsincreasingthemagneticfluxleakageonthetargetsurfaceofhighpuritycobalt targets(lowpermeability)soexpandingtheerosionareaprovidesamoreuniformfilmthicknessalongwithhigherareausageefficiency.

Meticulous quality control systemIntegratedprocessmanufacturingatULVACtakesproductcharacteristicsandcontours intoaccountduringproduction.Sophisticatedanalysis/evaluationsystemsuchastheGD-MS(glowdischargemassspectrometer)ensurepurityalongwithahighlevelofquality.

Sputtering Targets for Semiconductor Applications

Sputtering Targets for Semiconductor Applications

ULVAC Semiconductor Target Materials―AlwaysaLeaderinMaterialsontheCuttingEdgeofNewTechnology

GDMSAnalysis/ComparisonforVariousTungstenTargets

(ppm)

ComparisonofMetalMicrostructuresinTungstenTargetsEvaporationDepositionMaterials

TargetMaterialforMainstream300mmWafers

Target Sinter-W CVD-WNa ≤0.1 ≤0.01K ≤0.1 ≤0.01

Mg − ≤0.01Ca − ≤0.01Al ≤1 ≤0.03Cr ≤1 ≤0.03Fe ≤1 ≤0.03Ni ≤1 ≤0.03Cu ≤1 ≤0.01Th ≤0.0005 <0.0002U ≤0.0005 <0.0002O ≤100 ≤30C ≤50 ≤30

TargetMaterial Al-0.5mass%Cu Ti Cu Ta W

Purity 5N5up(low-U,Thspecifications) 4N5up 6Nup 6Nup(exceptforNbandW) 5N,6N,7N

ManufacturingMethod InductionMeltingMethod(Vacuum)

ArcMelting/EBMeltingMethod

MeltingMethod(Atmosphere) EBMelting Sinter,CVD

BackingplateMaterial AluminumorCopperAlloy AluminumAlloy AluminumAlloy AluminumorCopperAlloy

AluminumorCopperAlloy

BondingMethod ElectronBeamWelding,IntegratedPartStructure,orMetalBonding DiffusionBonding DiffusionBonding DiffusionBonding MetalBonding

Ourhigh-purityvacuumdepositionmaterialsarebeingusedinallfieldsinvolvingthinfilmelectronicdevices.Vapordepositionmaterialsmanufactured inacleanenvironmentandunder a sophisticatedquality assurance systemprovideour customerswith completesatisfaction.*Besidesourstandardproducts,pleasefeelfreetoconsultusforspecialneedsinvolvingcustommaterialsorcontours,etc.*Wealsohandlealltypesofvacuumevaporationsourcecomponents.Pleasetelluswhatyouneedandwewillmakeeveryefforttofillyourorder.

High-PurityVaporDepositionMaterials

GlowDischargeMassSpectrometer

TargetsforSemiconductorsApplication Field Materials Manufacturing Method Purpose of Use

Electrodematerials

W(5N) PowdersinteringW(6N,7N) CVDCo(5N) MeltingmethodNi(5N) MeltingmethodTi(5N) Meltingmethod

Varioussilicide(4Nup) Powdersintering

WiringMaterialsAl(5N,5N5)&

AlalloysuchasAlCu(5N,5N5) Vacuummeltingmethod

Cu(6N) MeltingmethodCompound

semiconductormaterials

Au,Aualloy(4N) Meltingmethod WiringWSi(5N) Powdersintering Electrode

SiO2(4N,6N) Artificial/naturalquartz Insulatingmaterial

Mounting&wiring

Al(5N,5N5)&Alalloy(5N,5N5) Vacuummeltingmethod Wiring

Cu(4N) Meltingmethod WiringCr(3N) Powdersintering Barriers

Preciousmetalmaterials Meltingmethod WiringTiW(4Nup) Powdersintering BarriersNi(4N) Meltingmethod Barriers

Capacitormaterials BST Powdersintering DRAM/thinfilmcapacitorsPZT Powdersintering FeRAM

Barriermaterials Ti(4N5) MeltingmethodTiW(4Nup) Powdersintering

Materials Purity Type Size Quantity

Al

5N SAW-15 diameter1.5×L 250grSAP-06 diameter6×15 200PSAP-22 diameter22×14.6 20PSAS-40 diameter49×diameter36×26H 3PSAS-110 diameter69×diameter57×36H 2P

5N5 MAP-06 diameter6×20 10P5N8 CAP-06 diameter6×20 10P6N diameter6×20

Cr

3N SCS-1 4×30×1.5 100PSCS-2 6×8×4 100PSCP-4 20×20×6 5PSCH-10 diameter32×diameter24×15 5P

SCH-40-20 diameter45×diameter35×20 2P

Materials Purity Type Size QuantityCu 4N ZMC-06 diameter6×15 200P

Ni

4N 10×3×7 100P4N 10×14×7 10P4N diameter45×diameter35×20 2P4N diameter10×3 100P

Ti3N diameter13×7.5 100P4N5 diameter12×3.5 100P4N5 diameter45×diameter35×20 2P

AgAlloy 4N diameter10×15 50PMo 4N diameter10×5 10P