sss45n20b_fairchild_937234

8/2/2019 SSS45N20B_FAIRCHILD_937234

1/10

2001 Fairchild Semiconductor Corporation

November 2001

Rev. A, November 2001

SSP45N20B

/SSS45N20B

SSP45N20B/SSS45N20B200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supply and motor control.

Features

35A, 200V, RDS(on) = 0.065 @VGS = 10 V

Low gate charge ( typical 133 nC)

Low Crss ( typical 120 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Absolute Maximum Ratings TC = 25C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter SSP45N20B SSS45N20B Units

VDSS Drain-Source Voltage 200 VID Drain Current - Continuous (TC = 25C) 35 35 * A

- Continuous (TC = 100C) 22.2 22.2 * A

IDM Drain Current - Pulsed (Note 1) 140 140 * A

VGSS Gate-Source Voltage 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ

IAR Avalanche Current (Note 1) 35 A

EAR Repetitive Avalanche Energy (Note 1) 17.6 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PD Power Dissipation (TC = 25C) 176 57 W

- Derate above 25C 1.41 0.45 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 C

Symbol Parameter SSP45N20B SSS45N20B Units

RJC Thermal Resistance, Junction-to-Case Max. 0.71 2.2 C/W

RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W

RJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 C/W

TO-220SSP Series

G SD

S

D

G

TO-220FSSS SeriesG SD


2/10

Rev. A, November 2001

SSP45N20B

/SSS45N20B

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)


Electrical Characteristics TC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 0.8mH, IAS = 35A, VDD = 50V, RG = 25 , Starting TJ = 25C3. ISD 45A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C4. Pulse Test : Pulse width 300s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 200 -- -- V

BVDSS

/ TJBreakdown Voltage TemperatureCoefficient ID = 250 A, Referenced to 25C -- 0.2 -- V/C

IDSSZero Gate Voltage Drain Current

VDS = 200 V, VGS = 0 V -- -- 10 A

VDS = 160 V, TC = 125C -- -- 100 A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 17.5 A -- 0.052 0.065

gFS Forward Transconductance VDS = 40 V, ID = 17.5 A -- 36 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 3300 4300 pF

Coss Output Capacitance -- 460 600 pF

Crss Reverse Transfer Capacitance -- 120 155 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = 100 V, ID = 45 A,

RG = 25

-- 45 100 ns

tr Turn-On Rise Time -- 340 690 ns

td(off) Turn-Off Delay Time -- 360 730 ns

tf Turn-Off Fall Time -- 270 550 ns

Qg Total Gate Charge VDS = 160 V, ID = 45 A,

VGS = 10 V

-- 133 173 nC

Qgs Gate-Source Charge -- 19 -- nC

Qgd Gate-Drain Charge -- 67 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 35 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 140 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 35 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, IS = 45 A,

dIF / dt = 100 A/s

-- 245 -- ns

Qrr Reverse Recovery Charge -- 2.27 -- C


3/10

Rev. A, November 20012001 Fairchild Semiconductor Corporation

SSP45N20B

/SSS45N20B

0 35 70 105 140 1750.00

0.05

0.10

0.15

0.20

0.25

0.30

VGS

= 20V

VGS

= 10V

Note : TJ= 25

RDS(ON)

[

],

Drain-SourceOn-Resistance

ID, Drain Current [A]

2 4 6 8 1010

-1

100

101

102

150oC

25oC

-55oC

Notes :1. V

DS= 40V

2. 250 s Pulse Test

ID,DrainCurrent[A]

VGS

, Gate-Source Voltage [V]10

-110

010

1

100

101

102

VGS

Top : 15.0 V10.0 V8.0 V

7.0 V6.5 V6.0 V5.5 V

Bottom: 5.0 V

Notes :1. 250s Pulse Test2. T

C= 25

ID,DrainCurrent[A]

VDS

, Drain-Source Voltage [V]

0 30 60 90 120 1500

2

4

6

8

10

12

VDS

= 100V

VDS

= 40V

VDS

= 160V

Note : ID

= 45 A

VGS,G

ate-SourceVoltage[V]

QG, Total Gate Charge [nC]

10-1

100

101

0

2000

4000

6000

8000

10000

Coss

Ciss

= Cgs

+ Cgd

(Cds

= shorted)C

oss= C

ds+ C

gd

Crss

= Cgd

Notes :1. V

GS= 0 V

2. f = 1MHz

Crss

Ciss

Capacitance[pF]

VDS


0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.010

0

101

102

150

Notes :1. V

GS= 0V

2. 250 s Pulse Test

25

IDR,ReverseDrainCurrent[A]

VSD

, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics


4/10

2001 Fairchild Semiconductor Corporation Rev. A, Novem ber 2001

SSP45N20B

/SSS45N20B

100

101

102

10-2

10-1

100

101

102

100s10s

1 ms

DC100 ms

10 ms

Operationin This Areais Limited by R

DS(on)

Notes :

1. TC

= 25oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS


25 50 75 100 125 1500

5

10

15

20

25

30

35

40

ID,DrainCurrent[A]

TC, Case Temperature []

100

101

102

10-1

100

101

102

10s

DC

10 ms

1 ms

100s

Operation in This Areais Limited by R

DS(on)

Notes :

1. TC

= 25oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :1. V

GS= 10 V

2. ID

= 22.5 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :1. V

GS=0V

2. ID=250A

BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Area

for SSP45N20B

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for SSS45N20B


5/10


SSP45N20B

/SSS45N20B

Typical Characteristics (Continued)

1 0-5

10-4

1 0-3

10-2

1 0-1

1 00

101

10-2

10-1

100

Notes :1. Z

JC(t ) = 0.71 /W M ax .

2 . Dut y Fac tor , D=t1/t

2

3. TJM

- TC

= PDM

* Z JC

(t)

s ing le pu l se

D = 0 . 5

0 . 0 2

0 .2

0 .05

0 .1

0 . 0 1

Z

JC(

t),Therm

alResponse

t1, S q u a r e W a v e P u l s e D u r a t io n [ s e c ]

Figure 11-1. Transient Thermal Response Curve to SSP45N20B

t1

PDM

t2

10 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 10 1

10-2

10-1

1 00

Notes :1 . Z

JC(t ) = 2.2 /W M ax .

2 . Dut y Fac tor , D=t1/t

2

3 . TJM

- TC

= PDM

* Z JC

(t)

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z

JC(

t),Therm

alResponse

t1, S q u a r e W a v e P u l s e D u r a t i o n [s e c ]

Figure 11-2. Transient Thermal Response Curve SSS45N20B

t1

PDM

t2


6/10


SSP45N20B

/SSS45N20B

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

tp

EAS = L IAS2----

2

1EAS = L IAS

2----2

1----2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

tp

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms


7/10

2001 Fairchild Semiconductor Corporation Rev. A, Novem ber 2001

SSP45N20B

/SSS45N20B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------


8/10


SSP45N20B

/SSS45N20B

Package Dimensions

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2.8

00.1

0

15.9

00.2

0

10.0

8

0.3

0

18.9

5MAX.

(1.7

0)

(3.7

0)

(3.0

0)

(1.4

6)

(1.0

0)

(45)

9.2

00.2

0

13.0

80.2

0

1.3

00.1

0

1.30+0.100.05

0.50+0.100.05

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

TO-220

Dimensions in Millimeters


9/10


SSP45N20B

/SSS45N20B

Package Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30

)

#1

3.

30

0.

10

15.

800.

20

15.

87

0.

20

6.

68

0.

20

9.

75

0.

30

4.

70

0.

20

10.16 0.20

(1.00x45)

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

0.50+0.100.05

TO-220F

Dimensions in Millimeters


10/10


DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

STAR*POWER is used under license

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HiSeC

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MicroPak

MICROWIRE

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PowerTrench

QFET

QS

QT Optoelectronics

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SLIENT SWITCHER

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STAR*POWER

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