sw presentation2019 v3 - 京都大学 · • electron-positron annihilation gamma-rays (511 kev)...
TRANSCRIPT
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電子飛跡検出型Si/CdTe半導体コンプトンカメラの進展
渡辺 伸 (ISAS/JAXA)
Si/CdTe semiconductor Compton cameras with electron-tracking based imaging for high sensitive MeV gamma-ray observations
第2回 MeVガンマ線研究会 2019/9/26
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MeVガンマ線観測で天体物理• Nuclear gamma-ray emission
• very hot accretion flows (BH binary, ex: Cyg X-1) • Supernova Explosion
• electron-positron annihilation gamma-rays (511 keV) • the Galactic center • Supernova remnants
• Pulsar Wind Nebula • Magnetar • Solar flare • … Integral SPI 511 keV image
profiles of the 511 keV image
Knödlseder et al 2005
Kafexhiu, Aharonian & Barkov 2019
56Ni decay gamma-rays from SN2014J SPI/INTEGRAL Diehl et al. 2014
Energy Resolution: ~1% (ΔE/E) Spatial Resolution: ~1 degree
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コンプトンカメラの原理
コンプトンコーン
散乱位置と吸収位置の情報 (X1,X2)反跳電子と散乱光子のエネルギー情報 (E1, E2)散乱角θの計算->コンプトンコーンの決定
コンプトン散乱
光電吸収
Sp
cosθ = 1 − mec2
(
1
E2−
1
E1 + E2
)
(E1,X1)
(E2,X2)
θ
散乱体
吸収体コンプトン散乱の運動学
・・・・コンプトンコーンの重ね合わせ
・統計的に有意な ソースの検出
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コンプトンカメラの性能
θEinEout
コンプトン散乱
光電吸収Sp
θ
(E1,X1)
(E2,X2)
コンプトンカメラの性能：精度よくガンマ線の反応をトラックできるか？•コンプトンカメラのエネルギー分解能 •→構成検出器のエネルギー分解能(ΔE) •コンプトンカメラの角度分解能 •コーン軸Spの精度 → 構成検出器の位置分解能(ΔX) •散乱角θの決定精度 → 構成検出器のエネルギー決定精度 •ドップラーブロード二ング →散乱体検出器の物質
•高いエネルギー分解能と位置分解能を持った半導体検出器 •Si:コンプトン散乱の確率が高い •CdTe: 光電吸収効率が高い •Si: ドップラーブロード二ングが小さい
SiとCdTeの組み合わせは最適
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Advanced Si/CdTe semiconductor Compton Camera
散乱体(Siなど)
吸収体(CdTeなど)
(E1,r1)
コンプトンコーン
(E2,r2)
θ
反跳電子e-
反跳電子の動きから入射方向が制限
scatter (ex. Si)
absorber (ex. CdTe)
recoiled electron
Compton Arc
how accurately we can determine the direction
-> The length of Compton arc
E
Te
θ
Compton Ring/Cone
With Electron TrackWithout Electron Track
Compton Arc
Adding the information on the direction of the recoil electron
Si/CdTe semiconductor Compton Camera with electron-tracking based imaging
-
Si detector to detect electron trajectoriesIn order to precisely track electron trajectories in Si fine position resolution is required
Energy of recoil electrons down to
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Si-CMOS hybrid detectorA double-sided Si detector and a CMOS-IC are combined.
Yoneda, SW et al. (NDIP 2017, NIM-A 2017)
Si n-bulk
金属電極 (高電圧側)
CMOSセンサ (p-sub)
p
ASIC for strip det.
double-sided Si (~500 um)
CMOS-IC
strips (ohmic side)
20 µm pitch pixels (junction side)
Timing for Compton coincidence and Energy
Image of electron tracks (Corresponds to Triggered strip)
1.3 cm
strip electrodes(64 strips) ASIC(VATA-SGD)
640x640 pixels
Non-destructive readout
Sum
of p
ixel v
alue (
CMOS
)
0 10 20 30 40 50 60 70 80 90 1000
10
20
30
40
50
60
70
80
90
100
1
10
210
310
hist2d
ASIC signal [keV]0 20 40 60 80 1000
5000
10000
15000
20000
25000
30000
35000
spec_si
Energy resolution FWHM 1.6 keV
@59.5 keV
ASIC signal [keV]
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厚型CdTe DSD
(EPt + EAl)/2
(EPt
−E A
l)/2
[keV]
[keV]
57Co
2mm厚CdTe DSD 250µm strip pitch 500 V , ‒40℃
CdTe DSDで両面の信号を使って処理することで、厚い素子でもエネルギー分解能のよい検出器を得ることが可能
2mm厚 ~80% @100 keV
-
厚型CdTe DSD
(EPt + EAl)/2
(EPt
−E A
l)/2
[keV]
[keV]
0 50 100 150 2000
10000
20000
30000
40000
50000
60000
70000
80000
spec1
Energy[keV]0 100 200 300 400 500 600 7000
10000
20000
30000
40000
50000
60000
70000
80000
90000
spec1
Energy[keV]
57Co 137Cs122 keV FWHM 2.6 keV
662 keV FWHM 7.1 keV
57Co
2mm厚CdTe DSD 250µm strip pitch 500 V , ‒40℃
CdTe DSDで両面の信号を使って処理することで、厚い素子でもエネルギー分解能のよい検出器を得ることが可能
2mm厚 ~80% @100 keV
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Prototype Compton Camera for electron-tracking based ImagingCdTe Double-sided strip detector (CdTe: ACRORAD), 2 mm thick 128+128 strips, 250µm strip pitch
7 mm
64 mm
32 mm
13 mm0.5 mm thick
2 mm thick
Si-CMOS
CdTe DSD
Radioactive IsotopeSi-CMOS, 0.5 mm thick 20µm pixel pitch 640x640 pixels
FPGA for LSI
FPGA for CMOS
FADC
readout LSI(VATA(SGD)) for Si strip side
CdTe DSD
CMOS (Si pixel readout)
Si detector
readout LSIs(VATA(SGD))
Data, Control, Triggers
,..
SignalControl
Frame No. info., veto, ..
DATA
DATAASIC
ASIC
ASIC
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0 100 200 300 400 500 600 7000
50
100
150
200
250
300
350
400
450
spec_comp_nosel
0 200 400 600 800 10000
200
400
600
800
1000
0
10
20
30
40
50
60
70
80
spec_comp2d_nosel si cdte
Energy Spectrum
FWHM 7.4 keV @662 keV
Si Energy deposit[keV]
CdTe
Ener
gy d
epos
it[ke
V]137Cs
Scattered in Si, Absorbed in CdTe
137Cs
Energy[keV]
Si energy deposit + CdTe energy deposit
-
20− 15− 10− 5− 0 5 10 15 200
100
200
300
400
500
600
700
dist_arm
Compton Imaging (conventional)137Cs 662 keV
[mm][mm]
[degree]
Angular Resolution Measure
Si-CMOS
CdTe DSD
𝜃geom
E1
E2
cos 𝜃kin =
ARM = 𝜃geom – 𝜃kin
point-like source with a diameter of 1mm , distance 64 mm
FWHM 3.1 degree
source size : ~0.9 degree detectors position res. : ~2.0 degree
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Electron Trajectories obtained with the Si-CMOS
600 µm
pixel
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Electron Trajectories obtained with the Si-CMOS
600 µm
pixel
375 380 385 390 395
570
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590
0
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Electron-tracking based Imaging
[mm]
[mm
]
[mm][m
m]
conventional imaging electron-tracking based imaging
10 events
-
Electron-tracking based Imaging
[mm]
[mm
]
[mm][m
m]
conventional imaging electron-tracking based imaging
10 events
-
Electron-tracking based Imaging
[mm]
[mm
]
[mm][m
m]
|ARM| < 3.0ºconventional imaging electron-tracking based imaging
-
Electron-tracking based Imaging
[mm]
[mm
]
[mm][m
m]
|ARM| < 3.0ºconventional imaging electron-tracking based imaging
-
How accurately can we recover the direction of recoil electrons?accuracy of direction correct - estimated
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Issues to be solved• efficiency/ effective area
• (SGD CC) 5 cm x 5 cm , ~2 cm thick ( 0.6 mm x 32 layers) • (the current Si-CMOS) 1.3 cm x 1.3 cm, 0.5 mm thick (only one layer)
• Si-CMOS data processing : large data size, complex data processing • Difficulty in stacking multi-layers compactly • Difficulty of large area CMOS-ICs
H.V. H.V. Power Board
Data Processing (FPGA Board)
with SpaceWire IF
Si-CMOSCdTe
Power Data (Spw)
~5 x 5 x 5 cm3
•コンセプト（案）：モジュール化を発展 • 5 cm角くらいのコンパクトな電子飛跡検出型Si/CdTe半導体コンプトンカメラ •これを多数（100 ̶ 1000個 以上）配置 •ただし、1個から始められる！！ → CubuSatに搭載可能、気球も
SGD CCをそのまま電子飛跡検出型にするのは難しそう。
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まとめ• MeVガンマ線天体観測においても、空間分解能（～１degree)とエネルギー分解能(~1%)が重要
• 電子飛跡を検出できるSi-CMOSハイブリット検出器を開発
• Si-CMOS/CdTe DSD半導体コンプトンカメラの性能実証を実施
• 662 keVのガンマ線でコンプトン再構成を実証。エネルギー分解能FWHM 7.4 keV、角度分解能ARM FWHM 3.1 degreeを達成。
• 散乱電子の飛跡の情報を使うことで、入射ガンマ線の方向をさらに制限。
• モジュール型のSi-CMOS/CdTe半導体コンプトンカメラを提案。