Korea Institute of Geoscience and Mineral Resources (KIGAM)

1

23年 4月 20日

Thin Film Analysis by Ion Beam

Techniques

W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

Thin Film Analysis by Ion Beam

Techniques

W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

Korea Institute of Geoscience and Mineral Resources (KIGAM)

2

23年 4月 20日

Characteristics of MeV Ion Beam Analysis

• Nondestructive

• Absolute, quantitative

• High sensitivity

• Depth profiling in the first micron

• Light element detection (ERDA, NRA, PIGE)

• Ultra high sensitive isotope measurement

• Versatile

• External Beam available

Korea Institute of Geoscience and Mineral Resources (KIGAM)

3

23年 4月 20日

RBS vs TOF-ERDA

Korea Institute of Geoscience and Mineral Resources (KIGAM)

4

23年 4月 20日

Tandem Accelerator in KIGAM

Korea Institute of Geoscience and Mineral Resources (KIGAM)

5

23年 4月 20日

Multipurpose chamber for RBS & TOF-ERD

Korea Institute of Geoscience and Mineral Resources (KIGAM)

6

23年 4月 20日

Rutherford Backscattering Spectrometry (RBS)

21

2

0

221 ,,

2MMf

E

eZZ

d

d

• Semiconductors

• Superconductors

• Optical films

• Material science

Korea Institute of Geoscience and Mineral Resources (KIGAM)

7

23年 4月 20日

BN on Si

TOF-ERDA

21

2

0

221 ,,

2MMf

E

eZZ

d

d

Korea Institute of Geoscience and Mineral Resources (KIGAM)

8

23年 4月 20日

channel

0 200 400 600 800 1000

coun

t

0

200

400

600

800

1000

1200

1400

1600

energy (keV)

0 500 1000 1500 2000 2500 3000

experimentsimulated

O

Si

V Ni

Ar

Electrolytic Li-Ni-V-O(H)/Si (1000 A)

RBS result TOF-ERD result

Korea Institute of Geoscience and Mineral Resources (KIGAM)

9

23年 4月 20日

Thick 600 1015 atoms/ cm2 (22.56 g/cm2, ~ 440 A)

Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)

H 69.3 11.5 0.12 0.51 Li 112.6 18.8 1.30 5.75 O 259.7 43.3 6.90 30.59 Ar 2.6 0.43 0.17 0.76 V 86.6 14.4 7.32 32.46 Ni 69.3 11.5 6.75 29.92

Korea Institute of Geoscience and Mineral Resources (KIGAM)

10

23年 4月 20日

Electrolytic Si-P-N-O-Li on Si (2000 A)

RBS result TOF-ERD result

channel100 200 300 400 500 600 700 800 900 1000

Nor

mal

ized

yie

ld

0

200

400

600

800

1000

energy (keV)500 1000 1500 2000 2500 3000

measuredsimulated

P

Pt

Si

ON

Korea Institute of Geoscience and Mineral Resources (KIGAM)

11

23年 4月 20日

Thick 3500 1015 atoms/ cm2 (87.59 g/cm2, ~ 1600 A)

Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)

H 55.8 1.6 0.09 0.11 Li 1283.6 36.7 14.80 16.89 C 27.9 0.8 0.56 0.64 N 725.68 20.7 16.88 19.27 O 725.68 20.7 19.28 22.01 Si 117.22 3.4 5.47 6.24 P 558.21 16.0 28.71 32.77 Pt 5.58 0.2 1.81 2.06

Korea Institute of Geoscience and Mineral Resources (KIGAM)

12

23年 4月 20日

Active layer of TFT and PDP display Ru on Si (300 A)

RBS result TOF-ERD result

channel

0 200 400 600 800 1000

coun

t

0

2000

4000

6000

8000

10000

energy (keV)

0 500 1000 1500 2000 2500 3000

channel vs Exp energy(keV) vs theory

Ru

Si

Korea Institute of Geoscience and Mineral Resources (KIGAM)

13

23年 4月 20日

Thick 270 1015 atoms/ cm2 (42.27 g/cm2, ~ 340 A)

Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)

H 5.0 1.9 0.01 0.02 C 15.0 5.6 0.30 0.71 Ru 250.0 92.6 41.96 99.27

Korea Institute of Geoscience and Mineral Resources (KIGAM)

14

23年 4月 20日

channel

0 200 400 600 800 1000

coun

t

0

2000

4000

6000

8000

10000

energy (keV)

0 500 1000 1500 2000 2500 3000

experimentsimulated

Ru

SiO

Dielectric layer of semiconductor Ru - O on Si (300 A)

RBS result TOF-ERD result

Korea Institute of Geoscience and Mineral Resources (KIGAM)

15

23年 4月 20日

• Layer 1 Thick 50 1015 atoms/ cm2 (3.37 g/cm2 , ~ 30 A) Element Areal density Atomic ratio Mass density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)

H 17.9 35.7 0.03 0.88 C 5.4 10.7 0.11 3.17 O 8.9 17.9 0.24 7.04 Ru 17.9 35.7 3.37 88.91

• Layer 2 Thick 150 1015 atoms/ cm2 (19.22 g/cm2 , ~ 160 A) Element Areal density Atomic ratio Mass density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)

H 2.2 1.5 0.00 0.02 C 27.4 18.3 0.55 2.84 O 11.0 7.3 0.29 1.51 Ru 109.5 73.0 18.38 95.63

Korea Institute of Geoscience and Mineral Resources (KIGAM)

16

23年 4月 20日

Neutron generation target Ti-3H on Cu, 3H(p,n)3He

RBS result (before H irradiation)TOF-ERD result

(film composition)

He energy [MeV]0.0 0.5 1.0 1.5 2.0 2.5 3.0

Cou

nts

0

250

500

750

1000

Sim.

Exp.He : 3 MeV

SSBD :147o

Cu

Ti

Korea Institute of Geoscience and Mineral Resources (KIGAM)

17

23年 4月 20日

Accumulated Charge (uC)0 500 1000 1500 2000 2500 3000 3500

Tem

pera

ture

(o C

)

20

30

40

50

60

70

no cooling systemwith cooling system

proton current : 1 uA, energy : 3 MeVtarget : Cu : 1 mm coolant : freon

Temperature variation oftarget with H irradiation

He energy [MeV]0.0 0.5 1.0 1.5 2.0 2.5 3.0

Cou

nts

0

1000

2000

3000

4000

He : 3 MeV

SSBD :147o

Exp.

Sim.

Cu

Ti

Cu

RBS result (after H irradiation)

Korea Institute of Geoscience and Mineral Resources (KIGAM)

18

23年 4月 20日

Areal densityof Ti (atom/cm2)

Areal densityof 3H (atom/cm2)

Before irradiation After irradiationCal. by neutron

cross sectionMaker data

1.4 x 1019

4.6 x 1018

1.3 x 1019

3.8 x 1019

1.28 x 1019 2.5-3.8 x 1018

4.8 x 1018

Korea Institute of Geoscience and Mineral Resources (KIGAM)

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23年 4月 20日

Conclusion• RBS and TOF-ERD are mutually assistant in analysis from light elements

to heavy elements• Electrolytic films in which composition of light elements is important were

analyzed• It was found that Ru film can be a good dielectric film by introducing

small amount of oxygen• Nitrogen and oxygen were observed in a titanium tritide target and

the results reduced error of neutron cross section measurement• Cu migration during proton irradiation was also observed by RBS

measurement in spite of cooling by freon circulation• Ion beam analysis techniques are very successfully applied to

many fields of thin film studies