to-220 -3l plastic-encapsulate transistorsaitendo3.sakura.ne.jp/aitendo_data/product_img/... ·...
TRANSCRIPT
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 -3L Plastic-Encapsulate Transistors
2SD882 TRANSISTOR (NPN)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS ( Ta=25 unless otherwise specified℃ )
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA
DC current gain hFE VCE= 2 V, IC= 1A 60 400
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V
Transition frequency fT VCE= 5V, IC=0.1A f =10MHz
90 MHz
CLASSIFICATION OF hFE
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
TO-220 -3L
2. COLLECTOR
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3. BASE
1 .EMITTER
0 300 600 900 12001
10
100
1000
1 10 100 1000100
1000
1 10 100 10001
10
100
1000
1 10 100 100010
100
1000
0.1 1 1010
100
0 1 2 3 4 5 6 7 80.0
0.5
1.0
1.5
2.0
2.5
COMMON EMITTERVCE= 2V
VBEIC ——
BASE-EMMITER VOLTAGE VBE (mV)
CO
LLE
CTO
R C
UR
RE
NT
I C
(m
A)
T a=2
5℃
T a=1
00℃
3000
β=10
ICVBEsat ——
BASE
-EM
ITTE
R S
ATU
RAT
ION
VOLT
AGE
V B
Esa
t (m
V)
COLLECTOR CURREMT IC (mA)
Ta=100 ℃
Ta=25℃
3000
2000
Ta=100 ℃
Ta=25℃
β=10
ICVCEsat ——
CO
LLE
CTO
R-E
MIT
TER
SA
TUR
ATI
ON
VOLT
AGE
V C
Esa
t (m
V)
COLLECTOR CURREMT IC (mA)
3000
IChFE ——
Ta=100℃
Ta=25℃
DC
CU
RR
EN
T G
AIN
h
FE
COLLECTOR CURRENT IC (mA)
COMMON EMITTERVCE= 2V
3000
f=1MHzIE=0/IC=0Ta=25 ℃
VCB/VEBCob/Cib ——
Cob
Cib
REVERSE VOLTAGE V (V)
CAP
ACIT
ANC
E
C
(pF)
20
500
Static CharacteristicCOMMON EMITTERTa=25 ℃
10mA9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
IB=1mA
CO
LLE
CTO
R C
UR
RE
NT
I C
(A
)
COLLECTOR-EMITTER VOLTAGE VCE (V)
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Typical Characteristics
0 25 50 75 100 125 1500
500
1000
1500
2000
2500
CO
LLEC
TOR
PO
WER
DIS
SIPA
TIO
N
P
C
(mW
)
AMBIENT TEMPERATURE Ta ( )℃
PC —— Ta
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TO-220-3L Package Outline Dimensions
Min Max Min MaxA 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.054D 10.010 10.310 0.394 0.406E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491e
e1 4.980 5.180 0.196 0.204F 2.590 2.890 0.102 0.114h 0.000 0.300 0.000 0.012L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156Φ 3.735 3.935 0.147 0.155
Symbol Dimensions In Millimeters Dimensions In Inches
0.100 TYP2.540 TYP
B,Aug,2016