JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

3DD13001 TRANSISTOR (NPN) FEATURES

Power switching applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 450 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 8 V Collector cut-off current ICBO VCB=600V,IE=0 100 μA Collector cut-off current ICEO VCE=400V,IB=0 100 μA Emitter cut-off current IEBO VEB=7V,IC=0 100 μA

hFE(1) VCE=20V, IC=20mA 14 29 hFE(2) VCE=10V, IC=0.25mA 5 DC current gain hFE(3) VCE=5V, IC=0.5A 1

Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=10mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=10mA 1.1 V Transition frequency fT VCE=20V,IC=20mA,f=1MHz 8 MHz Rail time tr 0.9 μs

Storage time ts 1.7IC=0.1A

2.9 μs

CLASSIFICATION OF hFE(1) Range 14-17 17-20 20-23 23-26 26-29

Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V

IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ℃

Tstg Storage Temperature -55~150

TO-92

1. BASE

2. COLLECTOR

3. EMITTER

℃

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Administrator矩形

Administrator线条

Administrator线条

0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

0.1 1 10 1000

10

20

30

40

0.1 1 101

10

100

0.1 1 10 1000.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1 1 10 10010

100

0.4 0.6 0.8 1.01

10

100

0 10 20 30 40 500

10

20

30

40

3DD13001Typical CharacterisiticsCO

LLEC

TOR

POW

ER D

ISSI

PATI

ON

PC

(W

)

AMBIENT TEMPERATURE Ta ( )℃

PC —— Ta

VBE

hFE ——

IC ——

3 300.3

Ta=100℃

Ta=25℃

DC C

URRE

NT G

AIN

h F

E

COLLECTOR CURRENT IC (mA)

VCE=20V

IC

200

300

30

3

30.3 20

Cob

Cib

REVERSE VOLTAGE V (V)

f=1MHzIE=0/IC=0Ta=25℃

VCB/ VEBCob/ Cib ——

CAPA

CITA

NCE

C

(p

F)

3030.3

β=5

BASE

-EM

ITTE

R SA

TURA

TIO

NVO

LTAG

E

V BEs

at

(V)

COLLECTOR CURRENT IC (mA)

Ta=25℃

Ta=100℃

200

ICVBEsat ——

30

300

3030.3

COLL

ECTO

R-EM

ITTE

R SA

TURA

TIO

NVO

LTAG

E

V CEs

at

(mV)

COLLECTOR CURRENT IC (mA)

β=5

Ta=25℃

Ta=100℃

ICVCEsat —— 500

200

Ta=25℃

Ta=100℃

VCE=20V

30

3

200

COLL

CETO

R CU

RREN

T

I C

(mA)

BASE-EMMITER VOLTAGE VBE (V)

1.5mA

1.35mA

1.2mA

1.05mA

900uA

750uA

600uA

300uA

450uA

IB=150uA

Static Characteristic

COMMONEMITTERTa=25℃

COLL

ECTO

R CU

RREN

T

I C

(mA)

COLLECTOR-EMITTER VOLTAGE VCE (V)

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Typical Characteristics

Min Max Min MaxA 3.300 3.700 0.130 0.146

A1 1.100 1.400 0.043 0.055b 0.380 0.550 0.015 0.022c 0.360 0.510 0.014 0.020D 4.400 4.700 0.173 0.185D1 3.430 0.135E 4.300 4.700 0.169 0.185e

e1 2.440 2.640 0.096 0.104L 14.100 14.500 0.555 0.571Φ 1.600 0.063h 0.000 0.380 0.000 0.015

Symbol Dimensions In Millimeters Dimensions In Inches

1.270 TYP 0.050 TYP

TO-92 Package Outline Dimensions

TO-92 Suggested Pad Layout

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TO-92

4 C,Oct,2014