tube device
TRANSCRIPT
-
8/10/2019 Tube Device
1/73
-
8/10/2019 Tube Device
2/73
GENERATION OF MICROWAVE
SIGNAL Microwave Tubesklystron, reflex
klystron, magnetron and TWT.
Diode semiconductorTunnel, Gunn,
Impatt, Varactor diodes, PIN, LSA,
Schottky barrier diode.
-
8/10/2019 Tube Device
3/73
CROSSED-FIELD AND LINEAR-BEAMTUBES
Klystrons and Traveling-Wave tubes are
examples of linear-beam tubes These have a focused electron beam (as
in a CRT)
Magnetron is one of a number of crossed-
field tubes
Magnetic and electric fields are at right
angles
-
8/10/2019 Tube Device
4/73
Introduction
Microwave tubes are constructed to overcome thelimitations with conventional tubes and UHF tubes.
Principle of Operation:-
The basic principle of operation of microwave tubeinvolves transfer of power from a source of DC
voltage to source of AC voltage by means of a current
density modulated electron beam.
The same can be achieved by accelerating electrons in
a static electric field and retarding them in an AC field.
-
8/10/2019 Tube Device
5/73
Contd.. The density modulation of the electron beam allows
more electrons to be retarded by an AC field than
accelerated by DC field, which therefore makes possiblea net energy be delivered to the ac electric field.
Classification of microwave tubes:-
The classification is based on different factors. Their mechanism of producing density modulation.
The acceleration and retardation of electrons in the ac field.
Important types are:-
Klystron amplifier (two cavity,multy cavity)
Klystron oscillator (reflex klystron)
Magnetron
Traveling Wave Tube(TWT)
-
8/10/2019 Tube Device
6/73
Microwave Tubes
1 MW
1 KW
1W
1mW
0.3 1 3 10 30 100
300 Frequency (GHz)
Averag
epower
Microwave
tubes
Microwave
semiconductor
devices
Lower weight
Smaller size
Longer life time
Higher power
Limited life time
High vacuum
High potential
-
8/10/2019 Tube Device
7/73
Two possible methods of achieving high
output power in microwave system
Low power
semiconductoroscillator
High power tube
amplifier
High power
tube
oscillator
-
8/10/2019 Tube Device
8/73
Important Parameters Peak power Average power
Efficiency Gain
Bandwidth Frequency
Harmonic and spurious power Intermodulation products
Manufacturability at low cost
Relativecomplexity
of operation
Relativeoperating
voltage
Relativespurious
level
Gain
(dB)(%)
Relative
BW (%)Type
1Low26-1520-501-10Gridded tube
2High140-6030-701-5Klystron
3High330-5020-4030-120Helix tube
3High330-5020-405-40Coupled
cavity tube
-
8/10/2019 Tube Device
9/73
10 MW
1 MW
100 KW
10 KW
1 KW
100 W
0.3 1 3 10 30 100
300 Frequency (GHz)
Average power
Klystron
Coupled
cavity
TWT
Helix
TWT
Gridded tube
1000 MW
100 MW
10 MW
1 MW
100 KW
10 K W
0.3 1 3 10 30 100
300Frequency (GHz)
Peak power
Coupledcavity
TWT
Klystron
Gridde
d tube
Helix
TWT
-
8/10/2019 Tube Device
10/73
-
8/10/2019 Tube Device
11/73
Conventional Tubes Conventional Device tubes cannot be
used for frequencies above 100MHz 1. Interelectrode capacitance
2. Lead Inductance effect
3. Transit time effect 4. Gain Bandwidth limitation
5. Effect of RF losses (Conductance,
dielectric) 6. Effect due to radiation losses
-
8/10/2019 Tube Device
12/73
Efficient Microwave tubes usually operate
on the theory of electron velocitymodulation concept
The electron transit time is used in the
conversion of dc power to RF power
-
8/10/2019 Tube Device
13/73PH0101 Unit 2 Lecture 6 13
Klystron Tubes
A klystron is a vacuum tube that can beused either as a generator or as anamplifier of power, at microwavefrequencies.
http://en.wikipedia.org/wiki/Image:Klystron.enp.gif -
8/10/2019 Tube Device
14/73
KLystron
Used in high-power amplifiers
Electron beam moves down tube past
several cavities.
Input cavity is the buncher, outputcavity is the catcher.
Buncher modulates the velocity of the
electron beam
KLYSTRON
-
8/10/2019 Tube Device
15/73
KLYSTRON
There are two basic configurations of klystron
tubes
1. Reflex Klystron used as a low-power
Microwave oscillator
2. Multi cavity klystronused as low-power
microwave amplifier
-
8/10/2019 Tube Device
16/73
The major element are;
An electron gun to form and accelerate a beam of electrons
A focusing magnet to focus the beam of electrons through thecavities
Microwave cavities where the electron beam power isconverted to microwave power
A collector to collect the electron beam after the microwavepower has been generated
A microwave input where the microwave signal to beamplified is introduced into the klystron
A microwave output where the amplified microwave power istaken out
-
8/10/2019 Tube Device
17/73
Principle
Velocity modulated tube
High velocity electron beam is generatedby an electron gun and sent down along a
gas tube through an input cavity
(BUNCHER), drift space (FIELD FREE)and an output cavity (CATCHER) to a
collector electrode anode.
The anode is kept positive to receive theelectrons, while the output is taken from
the tube via resonant cavities with the aid
of coupling loops
-
8/10/2019 Tube Device
18/73
Two grids of the buncher cavity are
separated by a small gap A while the twogrids of the catcher cavity are separated by
a small gap B.
-
8/10/2019 Tube Device
19/73
REENTRANT CAVITIES
Cavities with metallic boundariesextended into the interior of the cavity.
Coaxial cavity support infinite number
of resonant frequencies.
-
8/10/2019 Tube Device
20/73
Reentrant cavities
M lti it Kl t
-
8/10/2019 Tube Device
21/73
Multicavity Klystron
-
8/10/2019 Tube Device
22/73
PH0101 Unit 2 Lecture 6 22
Applications
As power output tubes
1. in UHF TV transmitters
2. in troposphere scatter transmitters3. satellite communication ground station
4. radar transmitters
As power oscillator(550 GHz), if usedas a klystron oscillator
T C i Kl O ill
-
8/10/2019 Tube Device
23/73
Two Cavity Klystron Oscillator
Klystron amplifier can be converted into oscillator by
feeding back a part of catcher output to into the buncher inproper phase.
But the feed backing should be satisfy Barkhausen criterion.
A= 1
The schematic is same as of amplifier expect the feedbackneed to be added.
The feedback must be adjusted to give correct polarity and
amplitude which is basically depends on cavity tuning.
The criterion for oscillation is given by
Where + /2 is the phase angle difference between buncher and catcher
cavity.
is the total phase shift between resonator and the feedback cable.
-
8/10/2019 Tube Device
24/73
Contd
If the value of is zero means the oscillations are in
phase.
The maximum power output is obtained at this condition.
Also when a small change in the de accelerating voltage
it cause change in the frequency since transit angle varies.
Tuning of the oscillator is done by adjusting the grid
voltage, accelerating voltage and tuning the cavities.
High frequency oscillations are obtained by controlling
the temperature of the resonators.
-
8/10/2019 Tube Device
25/73
Buncher The cathode controls the number of electrons in the electron
beam and focuses the beam. The voltage between thecathode and the cavity resonators (the buncher and the
catcher, which serve as reservoirs of electromagnetic
oscillations) is the accelerating potential and is commonly
referred to as the beam voltage. This voltage accelerates theDC electron beam to a high.
-
8/10/2019 Tube Device
26/73
-
8/10/2019 Tube Device
27/73
KLYSTRON
A klystron is a specialized linear-beam vacuum tube,
invented in 1937 by American electrical
engineers Russel and Sigurd Varian, which is used as
an amplifier for high radio frequencies, from UHF up
into the microwave range or generator of power at mwfrequencies.
-
8/10/2019 Tube Device
28/73
Two Cavity Klystron Amplifier
Two cavity klystron amplifier is basically a
velocity modulated tube.Construction:-
Here a high velocity electron beam is formed , focusedand sent down along a glass tube through an input cavity(buncher ), a field free drift space and an output cavity(catcher ) to a collector electrode.
The anode is kept positive potential with respect tocathode.
The electron beam is passed through the gap A .
The input and output is taken from the tube via resonantcavities with the help of coupling loops.
-
8/10/2019 Tube Device
29/73
Two cavity klystron amplifier
-
8/10/2019 Tube Device
30/73
OPERATION Operation can be best explained by the help of apple
gate diagram
-
8/10/2019 Tube Device
31/73
Contd
Initial stage
At point Bon the input RF cycle, the alternating voltage is
zero and going to be positive.
At this instant, the electric field across gap A is zero and an
electron which passes through the gap A is unaffected by the
RF signal.
Let this electron is called the reference electron eR and travels
with an unaffected velocity v0 = . Where V is the anode to cathode voltage
-
8/10/2019 Tube Device
32/73
ContdSecond stage
At point C of the input RF cycle again we are passingelectron called late electron el as compared to the referenceelectron.
the late electron is subjected to maximum positive RF
voltage and hence travel towards gap B with an increasevelocity than V0 (V>V0 ) , and these electron overtakesreference electron.
Similarly an early electron ee that passes thorough the gap A
slightly before the reference electron is subjected to themaximum negative field.
So these electron travels with the reduced velocity than v0.
Later these electrons eeare catch up by reference electron.
-
8/10/2019 Tube Device
33/73
As a result of these actions the electrons in the bunching limit
gradually bunch together as they travel down in the driftspace from gap A to B.
The drift space converts the velocity modulation into current
modulation.
-
8/10/2019 Tube Device
34/73
-
8/10/2019 Tube Device
35/73
Two cavity Klystron Amplifier
-
8/10/2019 Tube Device
36/73
VELOCITY MODULATION
Electric field from microwaves at
buncher alternately speeds and slows
electron beam This causes electrons to bunch up
Electron bunches at catcher induce
microwaves with more energy The cavities form a slow-wave
structure
-
8/10/2019 Tube Device
37/73
The initial velocity of electron is
V0= electron accelerating high DC
voltage Microwave signal is applied at input, the
gap voltage at buncher becomes, V1