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University of Florida NHA Hydrogen Conference, March 21, 2007 Wireless Hydrogen Sensor Networks Using GaN-based Devices Travis Anderson 1 , Hung-Ta Wang 1 , Byoung Sam Kang 1 , Fan Ren 1 , Changzhi Li 2 , Zhen Ning Low 2 , Jenshan Lin 2 , Stephen Pearton 3 1 University of Florida, Chemical Engineering 2 University of Florida, Electrical and Computer Engineering 3 University of Florida, Materials Science and Engineering

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University of Florida NHA Hydrogen Conference, March 21, 2007

Wireless Hydrogen Sensor Networks Using GaN-based Devices

Travis Anderson1, Hung-Ta Wang1, Byoung Sam Kang1, Fan Ren1, Changzhi Li2, Zhen Ning Low2,

Jenshan Lin2, Stephen Pearton3

1 University of Florida, Chemical Engineering 2 University of Florida, Electrical and Computer Engineering 3 University of Florida, Materials Science and Engineering

University of Florida NHA Hydrogen Conference, March 21, 2007

NASA Funded Hydrogen Research at UF

• $10M funding over 4 years• 27 Projects• 60 Faculty members, post-docs, and graduate

students combined

UF NASA Funded Hydrogen Research Web Site:

http://www.mae.ufl.edu/NasaHydrogenResearch

University of Florida NHA Hydrogen Conference, March 21, 2007

NASA Funded Hydrogen Research at UF

Research Thrust Areas

• Fuel Cells (PEM and SOFC)

• Hydrogen Production, Storage, and Transport

• Nano Sensors - Hydrogen Leak DetectionGas inlet

H2

Gas outlet Single Crystal NanowiresHydrogen-Selective

Sensing at Room Temperature with ZnO

NanorodsH2 ProductionPEM FC micro grids & Cooling Plate

University of Florida NHA Hydrogen Conference, March 21, 2007

Motivation

Application fields:• Fuel leak detection for

automobile, space shuttle, and aircraft.

• Fire detection (CO, CO2).

• Emission, hydrocarbon, and health monitor.

• Environmental control.

University of Florida NHA Hydrogen Conference, March 21, 2007

Group III Nitride

• Outstanding mechanical and electronic properties

• Controllable wide range band gap(3.4eV-6.2eV AlGaN)

• High thermal stability

• Chemical inertness

• AlGaN/GaN 2DEG for high power and high frequency.

University of Florida NHA Hydrogen Conference, March 21, 2007

Device Fabrication

50 µm

Optical microscopic image

GaN

Sapphire

Al0.28Ga0.72N

Ti/AuPt

SiNx

Ti/Al/Pt/Au

Device Cross-section

2DEG

University of Florida NHA Hydrogen Conference, March 21, 2007

Sensing Mechanism

• H22H(chemisorption on Pt)

• Diffusion of H atom.

H2(gas) 2Hs 2Hb 2Hi

• Creation of a polarized layer at the interface

• Decrease of barrier height. (Schottky diode); increase of channel cross-section. (FET)

H2

Hs

Hb

2DEG

HiPt

AlGaN

GaN

University of Florida NHA Hydrogen Conference, March 21, 2007

Experimental Results

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

4

8

12

16

20

Cu

rren

t (m

A)

Biased Voltage (V)

Nitorgen

1% Hydrogen

1expexp2**F

nkT

eV

kT

qTAJ B ; ΔФB~ -50 meV @ room T

University of Florida NHA Hydrogen Conference, March 21, 2007

Practical Problem-False Alarm

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

4

8

12

16

20

Cu

rren

t (m

A)

Biased Voltage (V)

Nitrogen

1% Hydrogen

Room temperature 50 °C

1. Thermal effect to semiconductor and Schottky contact.

2. Voltage drift

University of Florida NHA Hydrogen Conference, March 21, 2007

Differential Diodes

Optical microscopic image

University of Florida NHA Hydrogen Conference, March 21, 2007

1% Hydrogen Test

University of Florida NHA Hydrogen Conference, March 21, 2007

Hardware Design

Warm up: 30 seconds 1s5s

Monitor

Tx data

Monitor

Tx data

Monitor

Tx data

Monitor

Tx data

Power Up

Power Down

1s5s 1s5s 1s5s

University of Florida NHA Hydrogen Conference, March 21, 2007

Wireless Sensor Module

Client can deactivate alarm

University of Florida NHA Hydrogen Conference, March 21, 2007

Field Test

University of Florida NHA Hydrogen Conference, March 21, 2007

Conclusions

GaN-based sensors demonstrate rapid response (<1s) and

reversibility Differential sensor devices eliminate sensitivity to

temperature and voltage drifts TiB2 can be used in ohmic contacts to improve reliability These sensors have been implemented in a wireless

detection circuit Field testing is underway at Greenway Ford, Orlando, FL We are seeking investors for a startup company

University of Florida NHA Hydrogen Conference, March 21, 2007

Acknowledgements

This work at UF is supported by:

1. NSF (CTS-0301178, monitored by Dr. M.

Burka and Dr. D. Senich)

2. NASA Kennedy Space Center Grant NAG

10-316 monitored by Mr. Daniel E. Fitch.

University of Florida NHA Hydrogen Conference, March 21, 2007

Hydrogen Sensing Test

Schematic illustration of gas sensor system

University of Florida NHA Hydrogen Conference, March 21, 2007

Room Temperature Test

University of Florida NHA Hydrogen Conference, March 21, 2007

50 °C Test

University of Florida NHA Hydrogen Conference, March 21, 2007

Comparison of Pd and Pt

Reference:[1] W. Eberhardt, F. Greuter, E. W. Plummer, Phys. Rev. Lett. 46, 1085 (1981).[2] http://www.rebresearch.com/H2sol2.htm[3] http://www.rebresearch.com/H2perm2.htm

[2]

[1][3]

University of Florida NHA Hydrogen Conference, March 21, 2007

Gas Sensing Devices

Resistor[3]Schottky diode [1] HEMT[2][1] B. S. Kang, F. Ren, B. P. Gila, C. R. Abernathy and S. J. Pearton, Appl. Phys. Lett. 84 1123 (2004).

[2] B. S. Kang, R. Mehandru, S. Kim, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, B.

P. Gila, C. R. Abernathy and S. J. Pearton, Appl. Phys. Lett. 84 4635 (2004).

[3] H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton, Jenshan Lin, Appl. Phys. Lett. 86 243503 (2005).