v 1200 v ds cab760m12hm3 ids 1200 v, 760 a all-silicon

Copyright ©2022 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc.

1Rev. 1, 2022-02-25 CAB760M12HM3 4600 Silicon Dr., Durham, NC 27703

CAB760M12HM31200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Technical Features

• Low Inductance, Low Profile 62mm Footprint• High Junction Temperature (175 °C) Operation• Implements Switching Optimized Third

Generation SiC MOSFET Technology• Light Weight AlSiC Baseplate• High Reliability Silicon Nitride Insulator

VDS 1200 V

IDS 760 A

System Benefits

• Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit• Increased System Efficiency, due to Low Switching & Conduction Losses of SiC• High Reliability Material Selection

Applications

• Railway & Traction• Solar• EV Chargers• Industrial Automation & Testing

Package 110mm x 65 mm x 12.2 mm

Key Parameters (TC = 25˚C unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

VDS max Drain-Source Voltage 1200

VVGS max Gate-Source Voltage, Maximum Value -8 +19 Transient, <100 nsFig. 33

VGS opGate-Source Voltage, Recommended Op. Value -4 +15 Static

IDS DC Continuous Drain Current1015

A

VGS = 15 V, TC = 25 C, TVJ ≤ 175 C Fig. 20

765 VGS = 15 V, TC = 90 C, TVJ ≤ 175 C

ISD DC Source-Drain Current 1015 VGS = 15 V, TC = 25 C, TVJ ≤ 175 C

ISD BD DC Source-Drain Current (Body Diode) 515 VGS = - 4 V, TC = 25 C, TVJ ≤ 175 C

IDS (pulsed) Maximum Pulsed Drain-Source Current 1530 tPmax limited by TVJ max

VGS = 15 V, TC = 25 ˚CISD (pulsed) Maximum Pulsed Source-Drain Current 1530

TVJ op

Maximum Virtual Junction Temperature under Switching Conditions

-40 175 °C

5

5

4

4

3

3

2

2

1

1

D D

C C

B B

A A

1

45

2

8

67

93

V+

Mid

NTC1

NTC2V-

G1K1

G2K2 -t°

-t°



MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)


V(BR)DSS Drain-Source Breakdown Voltage 1200

V

VGS = 0 V, TVJ = -40 °C

VGS(th) Gate Threshold Voltage1.8 2.5 3.6 VDS = VGS, ID = 280 mA

2.0 VDS = VGS, ID = 280 mA, TVJ = 175 °C

IDSS Zero Gate Voltage Drain Current 15 400μA

VGS = 0 V, VDS = 1200 V

IGSS Gate-Source Leakage Current 0.12 3 VGS = 15 V, VDS = 0 V

RDS(on)Drain-Source On-State Resistance(Devices Only)

1.33 1.73mΩ

VGS = 15 V, ID = 760 A Fig. 2Fig. 32.13 VGS = 15 V, ID = 760 A, TVJ = 175 °C

gfs Transconductance548

SVDS = 20 V, IDS = 760 A

Fig. 4585 VDS = 20 V, IDS = 760 A, TVJ = 175 °C

EOn

Turn-On Switching Energy, TVJ = 25 °CTVJ = 125 °CTVJ = 175 °C

20.320.723.7

mJ

VDS = 600 V, ID = 760 A,VGS = -4 V/15 V, RG(ext) = 1.0 Ω, L = 13.7 μH

Fig. 11Fig. 13

EOff

Turn-Off Switching Energy, TVJ = 25 °CTVJ = 125 °CTVJ = 175 °C

17.917.517.8

RG(int) Internal Gate Resistance 0.47 Ω VAC = 25 mV, f = 100 kHz

Ciss Input Capacitance 79.4nF VGS = 0 V, VDS = 800 V,

VAC = 25 mV, f = 100 kHzFig. 9Coss Output Capacitance 2.9

Crss Reverse Transfer Capacitance 90 pF

QGS Gate to Source Charge 768

nCVDS = 800 V, VGS = -4 V/15 VID = 760 APer IEC60747-8-4 pg 21

QGD Gate to Drain Charge 924

QG Total Gate Charge 2724

Rth JC FET Thermal Resistance, Junction to Case 0.068 0.073 °C/W Fig. 17


VSD Body Diode Forward Voltage5.4

VVGS = -4 V, ISD = 760 A

Fig. 74.7 VGS = -4 V, ISD = 760 A, TVJ = 175 °C

trr Reverse Recovery Time 49 nsVGS = -4 V, ISD = 760 A, VR = 600 Vdi/dt = 20 A/ns, TVJ = 175 °C

Fig. 32QRR Reverse Recovery Charge 17.0 μC

IRRM Peak Reverse Recovery Current 540 A

ERR

Reverse Recovery Energy TVJ = 25 °CTVJ = 125 °CTVJ = 175 °C

1.33.55.5

mJVDS = 600 V, ID = 760A,VGS = -4 V/15 V, RG(ext) = 1.0 Ω, L = 13.7 μH

Fig. 14

Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)



Module Physical Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions

R1-2 Package Resistance, M1 106.5μΩ

TC = 125 °C, Note 1

R2-3 Package Resistance, M2 126.3 TC = 125 °C, Note 1

LStray Stray Inductance 4.9 nH Between Terminals 1 and 3

TC Case Temperature -40 125 °C

W Weight 179 g

MS Mounting Torque3 4.5 5

N-mBaseplate, M6 bolts

0.9 1.1 1.3 Power Terminals, M4 bolts

Visol Case Isolation Voltage 4 kV AC, 50 Hz, 1 min

CTI Comparative Tracking Index 600

Clearance Distance13.07

mm

Terminal to Terminal

6.00 Terminal to Baseplate

Creepage Distance14.27 Terminal to Terminal

12.34 Terminal to Baseplate

Note 1 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance.

Temperature Sensor (NTC) Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions

R25 Resistance at 25°C 4700 Ω TNTC = 25 °C

Tolerance of R25 ±1 %

B25/85 Beta Value for 25°C to 85°C 3435 K

B0/100 Beta Value for 0°C to 100°C 3399 K

Tolerance of B25/85 ±1 %

P25 Maximum Power Dissipation 50 mW

+

A B C D

-1.289E+01 4.245E+03 -8.749E+04 -9.588E+06

Steinhart & Hart Coefficients for NTC Resistance & NTC Temperature Computation (T in K)

A1 B1 C1 D1

3.354E-03 3.001E-04 5.085E-06 2.188E-07



Figure 2. Normalized On-State Resistance vs. Drain Current for Various Junction Temperatures

Typical Performance

Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 15 V

Figure 1. Output Characteristics for Various Junction Temperatures

Figure 3. Normalized On-State Resistance vs. Junction Temperature

Figure 4. Transfer Characteristic for Various JunctionTemperatures

Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at

VGS = 0 V (Body Diode)

0

200

400

600

800

1000

1200

0 0.5 1 1.5 2 2.5 3 3.5

Drai

n-So

urce

Cur

rent

, IDS

(A)

Drain-Source Voltage, VDS (V)

150 °C125 °C

-40 °C

100 °C

tp < 300 μsVGS = 15 V

25 °C

175 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 0 50 100 150 200

Nor

mal

ized

On-

resis

tanc

e (p

.u.)

Virtual Junction Temperature, TVJ (°C)

tp < 300 μsVGS = 15 VID = 760 A

0

100

200

300

400

500

600

700

800

900

1000

0 2 4 6 8 10 12

Drai

n-So

urce

Cur

rent

, IDS

(A)

Gate-Source Voltage, VGS (V)

-25 °C-40 °C

0 °C25 °C

100 °C125 °C

150 °C175 °C

tp < 300 μsVDS = 20 V

0

200

400

600

800

1000

1200

0 0.5 1 1.5 2 2.5 3 3.5

Sour

ce-D

rain

Cur

rent

, ISD

(A)

Source-Drain Voltage, VSD (V)

150 °C125 °C

-40 °C

100 °C

tp < 300 μsVGS = 15 V

25 °C

175 °C

0

200

400

600

800

1000

1200

0 1 2 3 4 5 6

Sour

ce-D

rain

Cur

rent

, ISD

(A)


150 °C125 °C

-40 °C

100 °C

tp < 300 μsVGS = 0 V

25 °C0 °C-25 °C

175 °C

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0 200 400 600 800 1000 1200

Nor

mal

ized

On-

resis

tanc

e (p

.u.)

Drain-Source Current, IDS (A)

tp < 300 μsVGS = 15 V

-25 °C

100 °C

125 °C

150 °C

175 °C

25 °C



Figure 8. Typical Capacitances vs. Drain to Source Voltage(0 - 200V)

Typical Performance

Figure 11. Switching Energy vs. Drain Current(VDS = 600 V)

Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures at

VGS = - 4 V (Body Diode)

Figure 9. Typical Capacitances vs. Drain to Source Voltage (0 - 1200V) Figure 10. Threshold Voltage vs. Junction Temperature

Figure 12. Switching Energy vs. Drain Current (VDS = 800 V)

0

200

400

600

800

1000

1200

0 1 2 3 4 5 6 7

Sour

ce-D

rain

Cur

rent

, ISD

(A)


150 °C125 °C

-40 °C

100 °C

tp < 300 μsVGS = -4 V

25 °C0 °C-25 °C

175 °C

EOff

EOn

EOff + EOn

ERR0

10

20

30

40

50

60

70

80

90

0 200 400 600 800 1000 1200 1400 1600

Switc

hing

Ene

rgy

(mJ)

Source Current, IS (A)

Conditions:TVJ = 25°CVDD = 600 VRG(ext) = 1.0 ΩVGS = -4/+15 VL = 13.7 µH

EOff

EOn

EOff + EOn

ERR0

20

40

60

80

100

120

140

0 200 400 600 800 1000 1200 1400 1600

Switc

hing

Ene

rgy

(mJ)


Conditions:TVJ = 25°CVDD = 800 VRG(ext) = 1.0 ΩVGS = -4/+15 VL = 13.7 µH

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-50 0 50 100 150 200

Thre

shol

d Vo

ltage

, Vth

(V)

Virtual Junction Temperature, TVJ (°C)

Conditions:VGS = VDSIDS = 276 mA

0.01

0.1

1

10

100

1000

0 200 400 600 800 1,000 1,200

Capa

cita

nce

(nF)


Coss

TJ = 25 °CVAC = 25 mVf = 100 kHz

Crss

Ciss

0.01

0.1

1

10

100

1000

0 50 100 150 200

Capa

cita

nce

(nF)


Coss

TJ = 25 °CVAC = 25 mVf = 100 kHz

Crss

Ciss



Figure 14. Reverse Recovery Energy vs. Junction Temperature

Typical Performance

Figure 17. MOSFET Junction to Case Transient Thermal Impedance, Zth JC (°C/W)

Figure 13. MOSFET Switching Energy vs. Junction Temperature

Figure 15. MOSFET Switching Energy vs. External Gate Resistance Figure 16. Reverse Recovery Energy vs. External Gate Resistance

Figure 18. Forward Bias Safe Operating Area (FBSOA)

1E-6

1E-5

1E-4

0.001

0.01

0.1

1E-6 1E-5 1E-4 0.001 0.01 0.1 1

Junc

tion-

to-C

ase

Impe

d., Z

thjc

(°C/

W)

Time, tp (s)

Single Pulse

0.010.020.050.10

0.300.50

0.01

0.1

1

10

100

1000

0.1 1 10 100 1000

Drai

n-So

urce

Cur

rent

, IDS

(A)


Limited by RDS(on)

Conditions:Tc = 25 °C D = 0 Parameter: tp

EOff

EOn

EOff + EOn

0

5

10

15

20

25

30

35

40

45

50

0 25 50 75 100 125 150 175 200

Switc

hing

Ene

rgy

(mJ)

Junction Temperature, TVJ (°C)

Conditions:IS = 700 A, VDD = 600 VRG(ext) = 1.0 Ω, VGS = -4/+15 VL = 13.7 µH

EOff

EOn

EOff + EOn

ERR0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 10 12

Switc

hing

Ene

rgy

(mJ)

External Gate Resistor, RG(ext) (Ω)

Conditions:TVJ = 25°CIS = 700 AVDD = 600 VVGS = -4/+15 VL = 13.7 µH

ERR (VDD = 600 V)

ERR (VDD = 800 V)

0

1

2

3

4

5

6

0 25 50 75 100 125 150 175 200

Switc

hing

Ene

rgy

(mJ)


Conditions:IS = 700 ARG(ext) = 1.0 ΩVGS = -4/+15 VL = 13.7 µH

ERR (VDD = 600 V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 2 4 6 8 10

Switc

hing

Ene

rgy

(mJ)

External Gate Resistor, RG(ext) (Ω)

Conditions:TVJ = 25°CIS = 700 AVDD = 600 VVGS = -4/+15 VL = 13.7 µH



Figure 20. Continuous Drain Current Derating vs. Case Temperature

Typical Performance

Figure 19. Reverse Bias Safe Operating Area (RBSOA)

Figure 21. Maximum Power Dissipation Derating vs. Case Temperature

Figure 22. Typical Output Current Capability vs. Switching Frequency (Inverter Application)

0

500

1000

1500

2000

2500

3000

3500

-50 -25 0 25 50 75 100 125 150

FET

Pow

er D

issip

atio

n, P

D(W

)

Case Temperature, TC (°C)

Conditions:TVJ ≤ 175 °C

0

200

400

600

800

1000

1200

1400

-50 -25 0 25 50 75 100 125 150

Drai

n-So

urce

DC

Curr

ent,

I DS

(DC)

(A)

Case Temperature, TC (°C)

Conditions:TVJ ≤ 175 °C

0

200

400

600

800

1000

1200

0 10 20 30 40 50 60 70 80 90

Out

put C

urre

nt, I

Out

(Arm

s)

Switching Frequency, FS (kHz)

VDS = 800 VTC = 90 °CTVJ = 175 °CMF = 1RG-EXT = 1 Ω

1 Ω2 Ω

0

200

400

600

800

1000

1200

1400

1600

0 200 400 600 800 1000 1200

Drai

n-So

urce

Cur

rent

, IDS

(A)


Conditions:TVJ = 175°C LStray-bussing = 3.5 nHLStray-module = 4.9 nH

ChipModule (RG(ext) = 1 Ω) Module (RG(ext) = 2 Ω)

10

100

1,000

10,000

100,000

-50 -25 0 25 50 75 100 125 150 175

Typi

cal N

TC R

esist

ance

(Ω)

NTC Temperature (°C)

R25 = 4700 Ω

Figure 23. Typical NTC Resistance vs. Temperature



Figure 25. Timing vs. External Gate Resistance

Timing Characteristics

Figure 24. Timing vs. Source Current

Figure 26. Timing vs. Junction Temperature Figure 27. dv/dt and di/dt vs. Source Current

td(off)

tf

td(on)

tr

0

50

100

150

200

250

300

350

0 50 100 150 200

Tim

e (n

s)


Conditions:VDD = 600 VIS = 700 ARG(ext) = 1.0 ΩVGS = -4/+15 V

dv/dtOFF

dv/dtON

di/dtOFF

di/dtON

0

5

10

15

20

25

30

35

40

0 200 400 600 800 1000 1200 1400 1600

di/d

t (A/

ns) a

nd d

v/dt

(V/n

s)


Conditions:TVJ = 25°CVDD = 600 VRG(ext) = 1.0 ΩLStray-Bussing = 3.5 nH

td(off)

tf

td(on)

tr

0

50

100

150

200

250

300

350

0 200 400 600 800 1000 1200 1400 1600

Tim

e (n

s)


Conditions:TVJ = 25°CVDD = 600 VRG(ext) = 1.0 ΩVGS = -4/+15 V

Figure 28. dv/dt and di/dt vs. External Gate Resistance Figure 29. dv/dt and di/dt vs. Junction Temperature

dv/dtOFF

dv/dtON

di/dtOFF

di/dtON

0

5

10

15

20

25

0 2 4 6 8 10 12

di/d

t (A/

ns) a

nd d

v/dt

(V/n

s)

External Gate Resistance, RG-EXT (Ω)

Conditions:TVJ = 25°CVDD = 600 VIS = 700 ALStray-Bussing = 3.5 nH

dv/dtOFF

dv/dtON

di/dtOFFdi/dtON

0

5

10

15

20

25

30

35

40

0 50 100 150 200

di/d

t (A/

ns) a

nd d

v/dt

(V/n

s)


Conditions:IS = 700 AVDD = 600 VRG(ext) = 1.0 ΩLStray-Bussing = 3.5 nH

td(off)

tf

td(on)

tr

0

200

400

600

800

1000

1200

0 2 4 6 8 10 12

Tim

e (n

s)

External Gate Resistance, RG-EXT (Ω)

Conditions:TVJ = 25°CVDD = 600 VIS = 700 AVGS = -4/+15 V



Figure 31. Turn-on Transient Definitions

Definitions

Figure 30. Turn-off Transient Definitions

Figure 32. Reverse Recovery Definitions Figure 33. VGS Transient Definitions



Schematic and Pin Out

Package Dimensions (mm)

PIN OUT SCHEMEPIN LABEL

1 V+2 Mid3 V-4 G1, Top row pins (2)

5 K1, Bottom row pins (2)

6 G2, Top row pins (2)

7 K2, Bottom row pins (2)

8 NTC19 NTC2

76

8

54

1

2

39

5

5

4

4

3

3

2

2

1

1

D D

C C

B B

A A

1

45

2

8

67

93

V+

Mid

NTC1

NTC2V-

G1K1

G2K2 -t°

-t° D

1 D

1

B1

A1

B2

A3

D2 D3

A2

A4

D5

C6

4× 6.6±0.25 4× 12

A

XXXXXX-XXXX

9× M4 POWER TERMINAL CONNECTION POINTS

DATECODE

PARTNUMBER

DM CODE

0.303 SURFACES

A6 D4

C7

A5

9× 4.25 MAX BOLTPENETRATION DEPTH

C1 C2

C3 C4

C5

C8 C10 C10 C8

C8

C9

C9

DETAIL ASCALE: 4:1

3× R0.8 D6 D6 D6

XXXXXXXXXXXX

NOTE:ALL MARKINGS SHALL CONFORM TO PRC-00786.

DIMENSION TABLESYMBOL DIMENSION TOLERANCE

A1 110.00 0.60A2 109.25 0.60A3 65.00 0.60A4 64.25 0.60A5 3.25 0.30A6 11.45 0.60B1 93.00 0.30B2 48.00 0.30C1 11.30 0.40C2 13.84 0.40C3 24.00 0.40C4 34.16 0.40C5 36.70 0.40C6 1.71 0.40C7 17.30 0.50C8 2.54 0.30C9 0.64 0.30

C10 10.16 0.40D1 23.75 0.50D2 23.13 0.50D3 24.13 0.50D4 12.20 0.50D5 71.00 0.30D6 10.75 0.30



Notes

This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Cree. No communication from any employee or agent of Cree or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.

Notwithstanding any application-specific information, guidance, assistance, or support that Cree may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements.

This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities.

RoHS Compliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

REACh Compliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Cree representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

Supporting Links & Tools

• CGD1700HB3P-HM3 Evaluation Gate Driver• CGD12HB00D: Differential Transceiver Board• CPWR-AN35: Thermal Interface Material Application Note• CPWR-AN39: KIT-CRD-CIL12N-HM User Guide• KIT-CRD-CIL12N-HM: Dynamic Performance Evaluation Board for the HM2 and HM3 Module• CAB760M12HM3 PLECS Models

https://www.wolfspeed.com/cgd1700hb3p-hm3

https://www.wolfspeed.com/cgd12hb00d

https://assets.wolfspeed.com/uploads/2020/12/CPWR-AN35_62mm_TIM.pdf

https://assets.wolfspeed.com/uploads/2020/12/CPWR-AN39.pdf

https://www.wolfspeed.com/kit-crd-cil12n-hm3

https://www.wolfspeed.com/hm-power-module-family

v 1200 v ds cab760m12hm3 ids 1200 v, 760 a all-silicon

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