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June 2014

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET

©2010 Fairchild Semiconductor CorporationFCA47N60 / FCA47N60_F109 Rev. C3

www.fairchildsemi.com1

FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET600 V, 47 A, 70 mΩ

Features• 650 V @ TJ = 150°C

• Typ. RDS(on) = 58 mΩ

• Ultra Low Gate Charge (Typ. Qg= 210 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

• 100% Avalanche Tested

Application• Solar Invertor

• AC-DC Power Supply

DescriptionSuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

D

G

S

GS

DTO-3PN

Absolute Maximum Ratings

Thermal Characteristics

Symbol Parameter FCA47N60 FCA47N60_F109 Unit

VDSS Drain-Source Voltage 600 V

ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)

4729.7

AA

IDM Drain Current - Pulsed (Note 1) 141 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ

IAR Avalanche Current (Note 1) 47 A

EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)- Derate above 25°C

4173.33

WW/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C

Symbol Parameter Typ. Max. Unit

RθJC Thermal Resistance, Junction-to-Case, Max. -- 0.3 °C/W

RθJA Thermal Resistance, Junction-to-Ambient, Max. -- 41.7 °C/W

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width QuantityFCA47N60 FCA47N60 TO-3PN - - 30FCA47N60 FCA47N60_F109 TO-3PN - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- VVGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V

ΔBVDSS / ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C

BVDS Drain-Source Avalanche Breakdown Voltage

VGS = 0 V, ID = 47 A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 VVDS = 480 V, TC = 125°C

----

----

110

μAμA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 23.5 A -- 0.058 0.07

gFS Forward Transconductance VDS = 40 V, ID = 23.5 A -- 40 --VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,f = 1.0 MHz

-- 5900 8000 pFCoss Output Capacitance -- 3200 4200 pFCrss Reverse Transfer Capacitance -- 250 -- pFCoss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz -- 160 -- pFCoss eff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 420 -- pF

td(on) Turn-On Delay Time VDD = 300 V, ID = 47 ARG = 25 Ω

(Note 4)

-- 185 430 nstr Turn-On Rise Time -- 210 450 nstd(off) Turn-Off Delay Time -- 520 1100 nstf Turn-Off Fall Time -- 75 160 nsQg Total Gate Charge VDS = 480 V, ID = 47 A

VGS = 10 V(Note 4)

-- 210 270 nCQgs Gate-Source Charge -- 38 -- nCQgd Gate-Drain Charge -- 110 -- nC

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 47 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, IS = 47 A

dIF/dt =100 A/μs (Note 4)

-- 590 -- nsQrr Reverse Recovery Charge -- 25 -- μC

Notes:1. Repetitive Rating: Pulse-width limited by maximum junction temperature.

2. IAS = 18 A, RG = 25 Ω, starting TJ = 25°C

3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C4. Essentially independent of operating temperature typical characteristics.

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



Typical Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100 101

100

101

102

VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

Notes : 1. 250 s Pulse Test 2. TC = 25

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]2 4 6 8 10

100

101

102

Note 1. VDS = 40V 2. 250 s Pulse Test

-55

150

25

I D ,

Dra

in C

urre

nt [

A]

VGS , Gate-Source Voltage [V]

0 20 40 60 80 100 120 140 160 180 2000.00

0.05

0.10

0.15

0.20

VGS = 20V

VGS = 10V

Note : TJ = 25

RD

S(O

N) [

],Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

25150

Notes : 1. VGS = 0V 2. 250 s Pulse Test

I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

VSD , Source-Drain Voltage [V]

10-1 100 1010

5000

10000

15000

20000

25000

30000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

Notes : 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF]

VDS, Drain-Source Voltage [V]0 50 100 150 200 250

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

Note : ID = 47A

V GS,

Gat

e-S

ourc

e V

olta

ge [V

]

QG, Total Gate Charge [nC]

※

μ

※

μ

※

μ※

Ω

※

※

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variationvs. Temperature vs. Temperature

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes : 1. VGS = 0 V 2. ID = 250 A

BVD

SS, (

Nor

mal

ized

)D

rain

-Sou

rce

Brea

kdow

n Vo

ltage

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes : 1. VGS = 10 V 2. ID = 47 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

100 101 102 10310-2

10-1

100

101

102

Operation in This Area is Limited by R DS(on)

DC

10 ms

1 ms

100 us

Notes :

1. TC = 25 oC

2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]25 50 75 100 125 150

0

10

20

30

40

50

I D

, Dra

in C

urre

nt [A

]

TC, Case Temperature [ ]

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1 N o te s :

1 . Z JC( t) = 0 .3 /W M a x . 2 . D u ty F a c to r, D = t1/t2

3 . T JM - T C = P D M * Z JC( t)

s in g le p u lse

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

ZJC(t)

, The

rmal

Res

pons

e

t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]

t1

PDM

t2

※

μ※

※

※

θ

θ

θ

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VGS

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

FCA

47N60 / FC

A47N

60_F109 — N

-Channel SuperFET

® MO

SFET



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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

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F-PFS™FRFET®

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Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™Sync-Lock™

®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*μSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™仙童 ™

®

™

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