12.5w cw, 20-3000mhz power transistorpreliminary specification ta8210d 1 © 2018 tagore technology...

Preliminary Specification

TA8210D

1 www.tagoretech.com © 2018 Tagore Technology Rev1.6

12.5W CW, 20-3000MHz Power Transistor

FEATURES

• Frequency: 20-3000MHz

• Gain @ 800Mhz: 17dB

• Psat @ 800MHz: 42dBm

• PAE @ Psat: 52% @ 800MHz

• 28V Operation

APPLICATIONS

• Land Mobile Radios

• Military Radios

• Cellular Infrastructure TUNED DEMO BOARDS

• 1.8G – 2.7GHz

• 100 - 1000MHz

• 20 - 525MHz

DESCRIPTION

The TA8210D is a broadband capable 12.5W GaN on

Silicon power transistor covering 20MHz to 3GHz

frequency bands for power amplifier applications. The

input and output can be matched on board for best

power and efficiency for the desired band.

The TA8210D is packaged in a compact, low cost Quad

Flat No lead (QFN) 3x6mm, 32 leads plastic package.

Figure 1: Functional Block Diagram (top view)

ORDERING INFORMATION

Base Part Number Package Type Standard Pack Orderable

Part Number Form Quantity

TA8210D QFN 3 mm x 6 mm Tape and Reel 3000 TA8210DMTRPBF

1

2

3

4

32 31 30 29

12 13 14 15

28

16

5

6

7

8

9

10

11

22

21

20

19

18

17

23

24

25

26

27

33

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TA8210D


PIN DESCRIPTION

Note 1: Backside ground slug of the package must be grounded directly to the ground plane through multiple vias to ensure proper operation

ABSOLUTE MAXIMUM RATINGS

Exceeding one or a combination of the Absolute Maximum Ratings conditions may cause permanent damage to the device

RECOMMENDED OPERATING CONDITIONS

Note 2: Package base at 85deg C

PIN NUMBER PIN NAME DESCRIPTION

1, 2, 3, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 25, 26, 27,

28, 29, 30, 31, 32 NC Not Connected

4, 5, 6, 7, 8 Vgg & RFin Gate Voltage and RF Input

20, 21, 22, 23, 24 Vdd & RFout Drain Voltage and RF Output

331 Paddle/Slug Ground

PARAMETER SYMBOL RATINGS UNITS

Breakdown Voltage VDS +100 V

Gate Source Voltage Range VGS -7 to +1.5 V

Drain Current IDS 2.0 A

Gate Current IGS 12.0 mA

Power dissipation CW @ 25degC Pdiss 25.0 W

RF Input Power CW, 25degC, 800MHz RFin 28 dBm

Junction Temperature Tj 175 C

Storage temperature Range Tst -40 to +150 C

Operating Temperature Range Top -40 to +85 C

PARAMETER SYMBOL Min Typ Max UNITS

Drain Voltage Vd +12 +28 +32 V

Gate Voltage Vgg -3.3 -3.1 -2.9 V

Drain Bias Current Idq 80 mA

Drain Current Id 900 mA

Power dissipation CW2 Pdiss 18.0 W

Operating Temperature Range Top -40 25 85 C



TA8210D


THERMAL CHARACTERISTICS

RF Electrical Specifications Data taken on 100-1000MHz Broadband Reference Design, Vdd = 28V, Idq = 80mA, CW, Room Temp

PARAMETER Test Condition Symbol Typ UNITS

Thermal Resistance Vd = 28V, Tj = 175 degC θJC 5 C/W

PARAMETER Test Conditions Min Typ Max UNITS

Small Signal Gain (Gss) 800MHz 17 dB

Large Signal Gain Pout = 41dBm, 800MHz 16 dB

Psat 800MHz 42.0 dBm

Power Added Efficiency (PAE) Pout = 41dBm 52 %

Drain Voltage 28 32 Vdd

Ruggedness All phase, Pout = 41dBm VSWR = 10:1



TA8210D


Power Drive-Up of 100 – 1000MHz EVB

Note: Vd = 28V, Idq = 80mA (Vg = -3.1V), CW, Room Temp

Figure 2: Gain and Efficiency vs Pout (100–500MHz)

Figure 3: Gain and Efficiency vs Pout (600–1000MHz)

0

10

20

30

40

50

60

70

80

12

13

14

15

16

17

18

19

20

18 20 22 24 26 28 30 32 34 36 38 40 42 44

Dra

in E

ffic

ien

cy [

%]

Gai

n [

dB

]

Total Pout [dBm]

GAIN 100 MHz

GAIN 200 MHz

GAIN 300 MHz

GAIN 400 MHz

GAIN 500 MHz

EFF 100 MHz

EFF 200 MHz

EFF 300 MHz

EFF 400 MHz

EFF 500 MHz

0

10

20

30

40

50

60

70

80

12

13

14

15

16

17

18

19

20

18 20 22 24 26 28 30 32 34 36 38 40 42 44

Dra

in E

ffic

ien

cy [

%]

Gai

n [

dB

]

Total Pout [dBm]

GAIN 600 MHz

GAIN 700 MHz

GAIN 800 MHz

GAIN 900 MHz

GAIN 1000MHzEFF 600 MHz

EFF 700 MHz

EFF 800 MHz

EFF 900 MHz

EFF 1000 MHz



TA8210D




Figure 4: 2nd, 3rd Harmonic vs Pout (100–500MHz)

Figure 5: 2nd, 3rd Harmonic vs Pout (600–1000MHz)

-40

-35

-30

-25

-20

-15

-10

-5

0

-40

-35

-30

-25

-20

-15

-10

-5

0

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

3rd

Har

mo

nic

[d

Bc]

2n

d H

arm

on

ic [

dB

c]

Total Pout [dBm]

H2 100 MHz

H2 200 MHz

H2 300 MHz

H2 400 MHz

H2 500 MHz

H3 100 MHz

H3 200 MHz

H3 300 MHz

H3 400 MHz

H3 500 MHz

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

3rd

Har

mo

nic

[d

Bc]

2n

d H

arm

on

ic [

dB

c]

Total Pout [dBm]

H2 600 MHz

H2 700 MHz

H2 800 MHz

H2 900 MHz

H2 1000 MHz

H3 600 MHz

H3 700 MHz

H3 800 MHz

H3 900 MHz

H3 1000 MHz



TA8210D




Figure 6: Pdiss vs Pout (100–500MHz)

Figure 7: Pdiss vs Pout (600–1000MHz)

0

2

4

6

8

10

12

14

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

Po

we

r D

issi

pat

ion

[W

]

Total Pout [dBm]

Pdiss 100MHz

Pdiss 200MHz

Pdiss 300MHz

Pdiss 400MHz

Pdiss 500MHz

0

2

4

6

8

10

12

14

28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

Po

we

r D

issi

pat

ion

[W

]

Total Pout [dBm]

Pdiss 600 MHz

Pdiss 700 MHz

Pdiss 800 MHz

Pdiss 900 MHz

Pdiss 1000MHz



TA8210D


Typical Two Tone Power Drive-Up of 100 – 1000MHz EVB

Note: Vd = 28V, Idq = 80mA and 130mA, 450MHz, CW, Room Temp

Figure 8: IMD3 vs PEP at 450MHz

Figure 9: IMD5 vs PEP at 450MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

IMD

5[d

Bc]

"PEP" Output (Pavg + 3) [dBm]

Lower IM5, 80 mAUpper IM5, 80mALower IM5, 130 mAUpper IM5, 130 mA

-55

-50

-45

-40

-35

-30

-25

-20

25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

IMD

3 [

dB

c]

"PEP" Output (Pavg + 3) [dBm]

Lower IM3, 80 mA

Upper IM3, 80mA

Lower IM3, 130 mA

Upper IM3, 130 mA



TA8210D



Note: Vd = 28 & 32V, Idq = 80mA (Vg = -3.1V), CW, Room Temp

Figure 10: Gain and Efficiency vs Pout at 28V Vd

Figure 11: Gain and Efficiency vs Pout at 32V Vd

0

10

20

30

40

50

60

70

80

13

14

15

16

17

18

19

20

21

18 20 22 24 26 28 30 32 34 36 38 40 42

Dra

in E

ffic

ien

cy [

%]

Gai

n [

dB

]

Total Pout [dBm]

GAIN 20MHz 28V

GAIN 50MHz 28V

GAIN 100MHz 28V

GAIN 200MHz 28V

GAIN 300MHz 28V

GAIN 400MHz 28V

GAIN 500MHz 28V

GAIN 525MHz 28V

EFF 20 MHz 28V

EFF 50MHz 28V

EFF 100MHz 28V

EFF 200MHz 28V

EFF 300MHz 28V

EFF 400MHz 28V

EFF 500MHz 28V

EFF 525MHz 28V

0

10

20

30

40

50

60

70

80

13

14

15

16

17

18

19

20

21

18 20 22 24 26 28 30 32 34 36 38 40 42

Dra

in E

ffic

ien

cy [

%]

Gai

n [

dB

]

Total Pout [dBm]

GAIN 20MHz 32V

GAIN 50MHz 32V

GAIN 100MHz 32V

GAIN 200MHz 32V

GAIN 300MHz 32V

GAIN 400MHz 32V

GAIN 500MHz 32V

GAIN 525MHz 32V

EFF 20MHz 32V

EFF 50MHz 32V

EFF 100MHz 32V

EFF 200MHz 32V

EFF 300MHz 32V

EFF 400MHz 32V

EFF 500MHz 32V

EFF 525MHz 32V



TA8210D


Typical Characteristics of 1.8 – 2.7GHz EVB Note: Vd = 28V, Idq = 100mA (Vg = -3.08V), CW, Room Temp

Figure 12: S-parameter data

Note: Vd = 28V, Idq = 100mA (Vg = -3.08V), LTE (PAPR = 9.5dB), 10MHz BW, Room Temp

Figure 13: Gain and Efficiency vs Pout

-20

-15

-10

-5

0

5

10

15

20

1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800

(dB

)

Frequency (MHz)

Gain

ORL

IRL

0

5

10

15

20

25

30

35

40

9

10

11

12

13

14

15

16

17

15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

Dra

in E

ffic

ien

cy [

%]

Gai

n [

dB

]

Total Average Pout[dBm]

1.8 GHz Avg. Gain 2.3 GHz Avg. Gain 2.7 GHz Avg. Gain

1.8 GHz Avg. Eff 2.3 GHz Avg. Eff 2.7 GHz Avg. Eff



TA8210D


Figure 14: ACPR/AACPR vs Pout

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

AC

PR

(+/

-1

0 M

Hz)

[d

Bc]


Lower ACPR, 1.8 GHzUpper ACPR, 1.8 GHzLower ACPR, 2.3 GHzUpper ACPR, 2.3 GHzLower ACPR, 2.7 GHzUpper ACPR, 2.7 GHz

-70

-65

-60

-55

-50

-45

-40

-35

-30

22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

AA

CP

R (

+/-2

0 M

HZ)

[d

Bc]


Lower AACPR, 1.8 GHz

Upper AACPR, 1.8 GHz







TA8210D


Bias and Sequencing

Turn ON Device

1. Set Vg to -5V. 2. Set Vd to +28V. 3. Adjust Vg to achieve Idq current. 4. Apply RF power

Turn OFF Device

1. Turn RF power off. 2. Turn off Vd 3. Turn off Vg



TA8210D


Schematic of EVB Tuned for 100–1000MHz

Part List

Reference Value Manufacturer Part/Series

C1, C9 4.7nF, 50V Murata GRM18 Series

C2 4.7pF ATC 600S4R7CT250XT

L1 3.3nH Coilcraft 0603HP-3N3XGLW

L2 3.3nH Coilcraft 0402CS-3N3XGLW

L3 680nH Coilcraft PFL2512-681ME

L4 3.9nH Coilcraft 0603HC-3N9XJLW

L5 6nH Coilcraft 0603HP-6N0XGLW

C3 0.1uF, 10V AVX 0603YC104K4Z2A

C4 0.1uF, 50V Murata GRM31C5C1H104JA01K

C5 100uF Nichicon UPW1J101MPD1TD

C6, C7 3.9pF ATC 600S3R9CT250XT


R1 5.1 ohms Panasonic ERJ-3RQF5R1V

R2 51 ohms 250 mW Panasonic ERJ-PA3F51R0V


D1 7.5 V Zener On Semiconductor MMSZ5236BT 1G

PCB Rogers RO4350B, 20 mils, 2 ounce copper

Figure 15: Schematic of 100-1000MHz EVB

C1

4.7nF

C3

0.1uF

R250ohm

D1

C83.3pFRF IN

C9

4.7nF

Vgg

-v e

C73.9pF

RF OUT

L2

3.3nH

C5

100uF

L1

3.3nH

R1

5ohm

R333ohm

C63.9pF

VDD

28V

L3

680nH

PA

C4

0.1uF

L4

3.9nH

C24.7pF

L5

6nH

D1



TA8210D


Schematic of EVB Tuned for 20–525MHz

Part List

Reference Value Manufacturer Part/Series

C1, C9 4.7nF, 50V Murata GRM18 Series


L1 4.3nH Coilcraft 0603HP-4N3XGLW

L2 4.3nH Coilcraft 0402CS-4N3XGLW

L3 680nH Coilcraft PFL2512-681ME

L4 6.8nH Coilcraft 0603HP-6N8XJLW


C3 0.1uF, 10V AVX 0603YC104K4Z2A

C4 0.1uF, 50V Murata GRM31C5C1H104JA01K


C6 6.8pF ATC 600S6R8JT250XT


R1 5.1 ohms Panasonic ERJ-3RQF5R1V





Figure 16: Schematic of 20-525MHz EVB

L2

4.3nH

R333ohm

L1

4.3nH

C83.9pF

VDD

C1

2.2nFPARF IN

Vgg

-v e

C10

2.2nF

C5

100uF

C9

2.2nF

C4

0.1uF

L4

6.8nH

RF OUT

R1

5ohm

R250ohm

L3

680nH

L5

6.8nH

C24.7pF

D1

C3

0.1uF

C11

2.2nFC66.8pF

L2

C6

C1

C2

L1

C3

R1

R2,R3 L3

L4

L5 C4

C5

C8

C9

Vdd Vgg

D1



TA8210D


Schematic of EVB Tuned for 1.8 – 2.7GHz

Figure 17: Schematic of 1.8 – 2.7GHz EVB

C121.5pF

C15

0.1uF

C240.7pF

C142.2pF

R1133ohm

C21

0.1uF

VDD

28V

L11

1.0nH

C11

4.7nF

C230.7pF

Q1

C26

100uF

RF IN

C132.4pF

C25

4.7nF

R21

5.1ohm

C22

33pF

L23

0.8nH

RF OUT

Vgg

-v e

L22

22nH

L21

1.6nH

D11


TA8210D


Part List Reference Value Manufacturer Part/Series

C11, C25 4.7nF, 50V Murata GRM1885C1H472JA01D

C12 1.5pF ATC 600S1R5BT250XT




L21 1.6nH Coilcraft 0603HC-1N6XJLW

L22 22nH Coilcraft 0603HC-22NXJLW

L23 0.8nH Coilcraft 0402PA-0N8XJLW

C22 33pF ATC 600S330JT250XT

C15 0.1uF, 16V AVX 0603YC104K4Z2A

C21 0.1uF, 50V Murata GRM31C5C1H104JA01L


C23,24 0.7pF ATC 600S0R7BT250XT


R21 5.1 ohms 250 mW Panasonic ERJ-PA3J5R1V

Q1 Tagore Technology TA8210D




TA8210D


PACKAGE INFORMATION

Figure 18: Package drawings



TA8210D


QUALIFICATION INFORMATION†

Qualification Level Consumer

Moisture Sensitivity Level 3x6 QFN MSL1

Human Body Model TBD

Charged Device Model NA

RoHS Compliant Yes

The information provided in this document is believed to be accurate and reliable. However, Tagore Technology assumes no responsibility

for the consequences of the use of this information. Tagore Technology assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of Tagore Technology. The specifications mentioned in this document are subject to change without notice. This

document supersedes and replaces all information previously supplied.

For technical support, please contact Tagore Technology [email protected]

WORLD HEADQUARTERS:

5 East College Dr. Suite 200, Arlington Heights, IL 60004


mailto:[email protected]

12.5w cw, 20-3000mhz power transistorpreliminary specification ta8210d 1 © 2018 tagore technology...

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