1st international symposium on photonics and electronics...

ISPEC 2015

The 5th International Symposium on Photonics and Electronics Convergence

-Advanced Nanophotonics and Silicon Device Systems-

Technical Digest

November 30- December 2, 2015

Venue: Ito International Research Center, Hongo Campus

November 30- December 1, 2015

Venue: ENEOS Hall, Komaba Research Campus

December 2, 2015

Symposium Committee

Symposium Committee

General Chair: Yasuhiko Arakawa (The University of Tokyo)

Vice Chairs: Masahiko Mori (AIST)

Susumu Noda (Kyoto University)

Program Co-chairs: Takahiro Nakamura (PETRA, NEC)

Toshihiko Baba (Yokohama National University)

Secretaries: Satoshi Iwamoto (The University of Tokyo)

Nobuhiko Nishiyama (Tokyo Institute of Technology)

Mitsuru Takenaka (The University of Tokyo)

Members: Gerhard Abstreiter (Technische Universitat Munchen)

John Bowers (University of California, Santa Barbara)

Tomoyuki Fujita (PETRA)

Tsuyoshi Horikawa (PETRA, AIST)

Tatemi Ido (Hitachi)

Nobuyuki Kajihara (PETRA, Fujitsu)

Kazuhiko Kurata (PETRA, NEC)

Tohru Mogami (PETRA, NEC)

Ken Morito (PETRA, Fujitsu)

Koji Yamada (AIST)

Tsuyoshi Yamamoto (Fujitsu)

Symposium Information

Scope of the Symposium

The purpose of this 5th international symposium on photonics and electronics convergence (ISPEC 2015)

is to provide a forum for discussing recent advances in photonics for future LSI systems and related

technologies. The scope of this symposium includes designs, fabrication technologies, and characterizations

of photonics-electronics convergence systems and devices. Subjects on Si-photonics, nano-photonics

(photonic crystals, plasmonics and so on) and photonics-electronics integration circuits are also covered.

List of Invited Speakers

Keren Bergman (Columbia University)

Scott R. Bickham (Corning)

John Bowers (University of California, Santa Barbara)

Joris Van Campenhout (IMEC)

Peter De Dobbelaere (Luxtera)

Michal Lipson (Columbia University/Cornel University)

Shigeru Nakagawa (IBM Research Japan)

Yashuhisa Odani (OITDA)

Graham T. Reed (University of Southampton)

Keiichiro Shimada (Sony)

Shogo Ura (Kyoto Institute of Technology)

Amnon Yariv (California Institute of Technology)

S. J. Ben Yoo (University of California, Davis)

Zhiping J. Zhou (Peking University)

Venue

The Symposium will be held in Hongo and Komaba Campus of the University of Tokyo on November 30

- December 2. The sessions of November 30 - December 1 take place at the Ito International Research

Center in Hongo Campus and that of December 2 take place at the ENEOS Hall in Komaba Campus.

Hongo and Komaba Campus is close to Shinjuku and Shibuya city in Tokyo.

Language

The conference language is English.

Climate

The climate in November and December in Tokyo area is relatively dry and mild. The average temperature

during the symposium period is around 10 °C (50 °F).

Sponsors

Sponsored by

The University of Tokyo,

Photonics Electronics Technology Research Association (PETRA).

Co-sponsored by

The National Institute of Advanced Industrial Science and Technology (AIST).

Supported by

New Energy and Industrial Technology Development Organization (NEDO),

Optoelectronics Industry and Technology Development Association (OITDA),

IEICE Technical Group on Silicon Photonics.

Symposium Program

30th November (Monday)

Venue: Ito International Research Center

Hongo Campus, the University of Tokyo

Registration (9:00-9:50)

Welcome Address (9:50-10:00)

Y. Arakawa (The University of Tokyo)

Session A: Opening (10:00-12:00)

10:00 A-1 (Keynote)

Advances in Photonics and Electronics Convergence System Technology

Y. Arakawa (The University of Tokyo)

10:30 A-2 (Plenary)

The Semiconductor Laser

~A Continuing Story of Increasing Sophistication and Coherence~

A. Yariv (California Institute of Technology)

11:20 A-3 (Invited)

Epitaxial Growth of Quantum Dot Lasers on Silicon

J. Bowers (University of California, Santa Barbara)

12:00-13:30 Lunch break

Session B: Silicon Nanophotonics Devices & Systems I (13:30-17:10)

13:30 B-1 (Invited)

Future Challenges for Silicon Photonics

G. T. Reed (University of Southampton)

14:10 B-2 (Invited)

Scaling Silicon Photonics Using Graphene

M. Lipson (Columbia University)

14:50-15:10 Break

(Session B contd.)

15:10 B-3

Advanced Light Manipulation with Photonic Crystal Nanostructures

S. Noda and T. Asano (Kyoto University)

15:40 B-4 (Invited)

Silicon Photonics based Transceivers for Hyper-Scale Datacenters

P. De Dobbelaere (Luxtera)

16:20 B-5

Recent Development of Si Photonic Crystal Mach-Zehnder Modulators

T. Baba (Yokohama National University)

16:50 B-6 (Invited)

Roadmap of Photonics and Electronics Integration Technologies

Y. Odani (OITDA)

Banquet (17:30-20:00): Foyer of Ito International Research Center

1st December (Tuesday)

Venue: Ito International Research Center

Hongo Campus, the University of Tokyo

Session C: Silicon Nanophotonics Devices & Systems II (9:30-11:30)

9:30 C-1 (Invited)

2D and 3D Heterogeneous Integration with Silicon Photonics

S. J. B. Yoo (University of California, Davis)

10:10 C-2 (Invited)

Meeting Exascale Interconnect Requirements with Integrated Silicon Photonics

K. Bergman (Columbia University)

10:50 C-3 (Invited)

Guided-Mode Coupling for Optical Surface-Mount Packaging

S. Ura (Kyoto Institute of Technology)


Poster Session (13:00-15:40)

13:00 Poster preview

14:10 Poster presentation (core time for the odd-numbered posters)

14:55 Poster presentation (core time for the even-numbered posters)

Session D: Silicon Nanophotonics Devices & Systems III (15:40-17:30)

15:40 D-1 (Invited)

Recent Progress in Silicon Photonics for Short-Reach Optical Interconnects

J. V. Campenhout (IMEC)

16:20 D-2

On-Silicon Membrane and Hybrid Lasers for Intra/Inter-chip Connections

N. Nishiyama (Tokyo Institute of Technology)

16:50 D-3 (Invited)

Plasmonic Devices for High Density Silicon Photonic Integration

Z. J. Zhou (Peking University)

2nd December (Wednesday)

Venue: ENEOS Hall

Komaba Research Campus, The University of Tokyo

Session E: Silicon Nanophotonics Devices & Systems IV (9:30-12:00)

9:30 E-1 (Invited)

Optical Fibers for Data Centers and Short Reach Applications

S. R. Bickham (Corning)

10:10 E-2 (Invited)

Optical Multi-Chip Module for Servers and Cloud

S. Nakagawa (IBM Research Japan)

10:50 E-3 (Invited)

4K Video Technology Evolutions and the Expected Telecommunication Network

K. Shimada (Sony)

11:30 E-4

Integrated Silicon Photonics Chips in PETRA

T. Nakamura (PETRA)


Session F: Silicon Nanophotonics Devices & Systems V (13:30-16:00)

13:30 F-1

25-Gbps/ch error-free operation with Interposer on which Si-photonics-Based Optical I/O cores

and FPGA are mounted

T. Takeda (PETRA/NEC)

14:00 F-2

High Density and Low Power On-Package Optical Interconnection for Server Systems

S. Sekiguchi (PETRA/Fujitsu)

14:30 F-3

Silicon Photonics Integrated Bidirectional Optical Transceivers for Optical Access Networks

H. Yaegashi (PETRA/Oki)

15:00 F-4

Compact Optical Devices and CFP2-ACO Transceiver

M. Ishikawa (PETRA/NTT)

15:30 F-5

New Optical Interconnect Architecture for Standard Storage Interface Systems with a Double

Threshold Automatic Gain Control Technique

H. Uemura (PETRA/Toshiba)

Closing Session (16:00-16:10)

Poster Session (Tuesday)

P-1

Low Dark Current Ge Photodetector with Selectively Grown Si Capping Layer

S. Okumura1, K. Kinoshita1, J. Fujikata1, T. Simoyama1, H. Ono1, Y. Tanaka1, K. Morito1, T. Horikawa1, and T.

Mogami1

(1 PETRA)

P-2

Shallow-Grating Coupler for Robust Coupling to Multimode “Optical Pin”

J. Ushida1, M. Tokushima1, T. Uemura1, and K. Kurata1

(1 PETRA)

P-3

Isolator Free Optical I/O Core Transmitter by using Quantum Dot Laser Diodes

K. Mizutani1, K. Yashiki1, M. Kurihara1, Y. Suzuki1, Y. Hagihara1, N. Hatori1, T. Shimizu1, Y. Urino1,

T. Nakamura1, K. Kurata1, and Y. Arakawa2

(1 PETRA, 2 Univ. Tokyo)

P-4

High Speed and Highly Efficient Si Optical Modulator with Strained SiGe Layer

J. Fujikata1, M. Noguchi1, Y. Kim2, J. Han2, S. Takahashi1, T. Nakamura1, and M. Takenaka2

(1 PETRA, 2 Univ. Tokyo)

P-5

Direct Modulation Properties of GaInAsP/InP Membrane DFB Laser on Si

D. Inoue1, T. Hiratani1, K. Fukuda1, T. Tomiyasu1, T. Amemiy1,2, N. Nishiyama1, and S. Arai1,2

(1 Tokyo Inst. Tech., 2 QNERC)

P-6

Athermal Operation of a Waveguide Optical Isolator on a Silicon Platform

K. Furuya1, K. Kato1, Y. Shoji2, and T. Mizumoto1


P-7

Crystallinity Improvement of Ge Waveguides Fabricated by Epitaxial Lateral Overgrowth and Chemical

Mechanical Polishing

K. Oda1, T. Okumura1, J. Kasai1, S. Kako2, S. Iwamoto2, and Y. Arakawa2

(1 Hitachi, 2 Univ. Tokyo)

P-8

Trident Type Coupler between Crystal and Amorphous Si Waveguides

K. Itoh1, Y. Kuno1, Y. Hayashi1, J. Suzuki1, T. Amemiya2, N. Nishiyama1, and S. Arai1,2


P-9

A Chip-Scale 25-Gbps Optical Receiver Integrated with 28-nm CMOS Transimpedance Amplifier

D. Okamoto1, Y. Suzuki1, K. Yashiki1, Y. Hagihara1, M. Tokushima1, J. Fujikata1, M. Kurihara1, J. Tsuchida1, T.

Nedachi1, J. Inasaka1, and K. Kurata1

(1 PETRA)

P-10

A Double-side Processed Uni-Traveling-Carrier (UTC) Photodiode Integrated in an InP-based Membrane

Bonded on Silicon

L. Shen1, Y. Jiao1, J. v. d. Tol1, G. Roelkens1,2, and M. Smit1

(1 Eindhoven Univ. Tech., 2 Ghent Univ.-IMEC)

P-11

25-Gbps/ch Error-free Operation over 300-m MMF of Silicon-photonics-based Chip-scale Optical I/O Cores

K. Yashiki1, T. Uemura1, M. Kurihara1, Y. Suzuki1, M. Tokushima1, Y. Hagihara1, and K. Kurata1

(1 PETRA)

P-12

A Nanowire Plasmonic Laser with Quantum Dots as the Gain Medium

J. Ho1, J. Tatebayashi1, S. Sergent1, C. F. Fong1, S. Iwamoto1,2, and Y. Arakawa1,2

(1 NanoQuine, 2 Univ. Tokyo)

P-13

Effect of Threading Dislocations and Interface on Excess Carrier Lifetime of Undoped Germanium Grown on

Silicon

S. Kako1,2, K. Oda3, S. Ishida1, and Y. Arakawa1,2

(1 Univ. Tokyo, 2 NanoQuine, 3 Hitachi)

P-14

Si Wire Waveguide Polarization Rotator Bragg Gratings with Top Surface and Terrace Corrugation

H. Okayama1,2, D. Shimura1,2, Y. Onawa1,2, H. Yaegashi1,2, and H. Sasaki1,2

(1 Oki, 2 PETRA)

P-15

Wavelength and Polarization-Independent Efficient Vertical Optical Coupling with Si Integrated 45 Degree

Mirror

A. Noriki1,2, T. Amano1,2, D. Shimura1, Y. Onawa1, H. Sasaki1, K. Yamada1, H. Nishi1, T. Tsuchizawa1, S. Ukita1, M.

Sasaki1, and M. Mori1,2

(1 PATRA, 2 AIST)

P-16

Ultraviolet-Activated Wafer Bonding and Its Application to InAs/GaAs Quantum Dot Lasers on Silicon with

Improved Bonding Strength

Y.-H. Jhang1, K. Tanabe2,3, S. Iwamoto1,2, and Y. Arakawa1,2

(1 Univ. Tokyo, 2 NanoQuine, 3 Kyoto Univ.)

P-17

An “Optical Pin” as an I/O Structure providing Large Allowable Displacement for Miniaturized Si-Photonics

Optical Transceivers

T. Uemura1, A. Ukita1, K. Takemura1, M. Kurihara1, D. Okamoto1, J. Ushida1, K. Yashiki1, and K. Kurata1

(1 PETRA)

P-18

Formation of Self-catalyzed InP Nanowires on Si with Initial Growth Sequences

K. Kawaguchi1, H. Sudo2, M. Matsuda2, K. Takemoto2, T. Yamamoto2, and Y. Arakaw1,3

(1 NanoQuine, 2 Fujitsu, 3 Univ. Tokyo)

P-19

Room-temperature Lasing in a Single GaAs Nanowire with InGaAs/GaAs Quantum Dots

J. Tatebayashi1, S. Kako1, J. Ho1,2, Y. Ota1, S. Iwamoto1,2, and Y. Arakawa1,2


P-20

Influence of GaAs Nucleation Layer Growth Temperature on InAs/GaAs Quantum Dots Grown on Ge/Si

Substrate by MOCVD and Demonstration of Electroluminescence

M. Rajesh1, Z. Tu1,2, S. Kako1, M. Nishioka3, and Y. Arakawa1,3

(1 NanoQuine, 2 Peking Univ., 3 Univ. Tokyo)

P-21

Analysis of Crosstalk between Waveguides Crossing in 3D Photonic Crystals

K. Gondaira1, K. Ishizaki1, K. Kitano1, T. Asano1, and S. Noda1

(1 Kyoto Univ.)

P-22

High Speed InAs/GaAs Quantum Dot Lasers with GaP Strain-Compensation Layers

T. Kageyama1, K. Watanabe2, V. Q. Huy2, K. Takemasa3, M. Sugawara3, S. Iwamoto1,2, and Y. Arakawa1,2

(1 NanoQuine, 2 Univ. Tokyo, 3 QD Laser)

P-23

Fabrication of SiC Nanobeam Photonic Crystal Cavities

Y. Yamaguchi1, S.-W. Jeon1, B.-S. Song1,2, T. Asano1, and S. Noda1

(1 Kyoto Univ., 2 Sungkyunkwan Univ.)

P-24

High-Performance MOS Capacitor Type Optical Modulator with 60μm Phase Shifter for 1.3 μm Wavelength

S. Takahashi1, J. Fujikata1, M. Takahashi2, M. Noguchi1, T. Nakamura1, and Y. Arakawa3

(1 PETRA, 2 AIST, 3 Univ. Tokyo)

P-25

Optical Add-Drop Multiplexer Composed of Silicon Waveguide Optical Circulators and a Bragg Reflector

K. Kato1, Y. Shoji2, and T. Mizumoto1

(1 Tokyo Inst. Tech., 2 QNRC)

P-26

Effect of n-Type Doping on Transmission Characteristics in Germanium Waveguides

T. Okumura1, K. Oda1, J. Kasai1, M. Sagawa1, and Y. Suwa1

(1 Hitachi)

P-27

Enhancement and Control of Biaxial Tensile Strain of Suspended Germanium Cross-shaped Structures

S. Ishida1, S. Kako1,2, K. Oda3, S. Iwamoto1,2, and Y. Arakawa1,2

(1 Univ. Tokyo, 2 NanoQuine, 3 Hitachi)

P-28

On-Demand Light Transfer between Coupled Photonic Crystal Nanocavities through a Third Control Cavity

R. Konoike1, H. Nakagawa1, M. Nakadai1, T. Asano1, Y. Tanaka1, and S. Noda1

(1 Kyoto Univ.)

P-29

25-Gbps Operation of a Polymer Optical Waveguide on an Electrical Hybrid LSI Package Substrate with

Optical Card Edge Connector

T. Amano1,2, S. Ukita2, Y. Egashira2, M. Sasaki2, A. Noriki1,2, Y. Sakakibara1,2, and K. Kurata2

(1 AIST, 2 PETRA)

P-30

Si Mach-Zehnder Optical Switch based-on Liquid Crystal In-plane Switching Mode

Y. Atsumi1, T. Miyazaki2, M. Okano1, R. Takei1, N. Miura2, M. Mori1, and Y. Sakakibara1,2

(1 AIST, 2 Meiji Univ.)

P-31

Observation of Cavity Modes in GaAs Nanowires Embedding InAs Quantum Dots Directly Grown on Si(100)

J. Kwoen1, J. Ho2, K. Watanabe2, S. Iwamoto1,2, and Y. Arakawa1,2


P-32

Propagation Loss by SiO2 Over-Cladding for Silicon Waveguides

K. Kinoshita1, T. Horikawa1,2, D. Shimura1, and T. Mogami1

(1 PETRA, 2 AIST)

P-33

Design of Membrane Type Photodetector with Distributed Bragg Reflector

T. Hiratani1, A. Tomohiro2, N. Nishiyama1, and S. Arai1,2


P-34

Relative Intensity Noise in Quantum Dot Lasers Subjected to Optical Feedback

T. Rae1, K. Yashiki2, K. Kurata2, S. Iwamoto1, and Y. Arakawa1

(1 Univ. Tokyo, 2 PETRA)

P-35

On-chip Operation of Si Photonic Optical Correlator

S. Kinugasa1, N. Ishikura1, H. Ito1, N. Yazawa1, and T. Baba1

(1 Yokohama Nat’l. Univ.)

P-36

Launch Position Dependence of BER Characteristics of Quantum-dot Laser Through 1.3-μm Optimized

Multi-mode Fibers

T. Kaneko1, N. Nishiyama1, and S. Arai1,2


P-37

Slow-light Enhancement in Si Photonic Crystal Waveguide as a Sub-bandgap Photodiode

Y. Terada1, K. Miyasaka1, H. Ito1, and T. Baba1


P-38

Optimization of Doping Profile in Si Photonic Crystal Slow Light Modulator for Larger Phase Shift and

Higher Response Speed

Y. Terada1, T. Tatebe1, and T. Baba1

(1 Yokohama Nat’l Univ.)

P-39

Four Wave Mixing in Silica-Clad Photonic Crystal Waveguides Generating Wideband Dispersion-Free Slow

Light with High Group Index

T. Tamura1, and T. Baba1


P-40

Si Photonic Crystal Compact Multilevel Modulators

K. Hojo1, Y. Terada1, N. Yazawa1, T. Watanabe1, and T. Baba1


P-41

Bandwidth Enhancement of Si MOS Optical Modulators using Strained SiGe Slab

J.-H. Han1,2, M. Takenaka1,2, and S. Takagi1,2

(1 Univ. Tokyo, 2 JST-CREST)

P-42

Numerical Analysis of Saturable Absorption Characteristics in III-V/SOI Hybrid Lasers Fabricated by N2

Plasma Activated Bonding

Y. Hayashi1, J. Suzuki1, S. Inoue1, S. MD T. Hasan1, Y. Kuno1, K. Itoh1, T. Amemiya2, N. Nishiyama1, and S. Arai1,2


P-43

A Consideration toward Efficient Optical Kerr Effect in Si Photonic Crystal Waveguides

M. Takeuchi1, K. Kondo1, and T. Baba1


P-44

Effects of Reverse Bias on Raman Scattering in a Silicon Photonics Crystal Waveguide

W. Wang1, Y. Hsiao1, S. Iwamoto1,2, and Y. Arakawa1,2

(1 Univ. Tokyo, 2 NanoQuine)

P-45

Pulse-width Modulation Driving of Thermo-optic Mach-Zehnder Switches using Monolithically Integrated

MOSFET on Si-photonic Platform

G.W. Cong1, T. Matsukawa1, T. Chiba1, H. Tadokoro1, M. Yanagihara1, M. Ohno1, H. Kuwatsuka1, Y. Igarashi1, M.

Masahara1, H. Ishikawa1, K. Ikeda1, S. Namiki1, H. Kawashima1, and K. Yamada1

(1 AIST)

P-46

Ni-InGaAsP Alloy for Low-resistivity Lateral PIN Junction Formation in Carrier-injected InGaAsP Photonic

Devices

J.-K. Park1,2, M. Takenaka1,2, and S. Takagi1,2


P-47

Transmission Characteristics of Optical Feedback-Tolerant Gain-Coupled DFB Lasers on Si Photonic Chips

K. Nakamura1,2, Y. Morino1,2, S. Miyamura1,2, D. Shimura1,2, H. Takahashi1,2, Y. Onawa1,2, H. Yaegashi1,2, and H.

Sasaki1,2

(1 Oki, 2 PETRA)

P-48

Slow-Light-Induced Doppler Shift in Photonic Crystal Waveguides

K. Kondo1 and T. Baba1


P-49

A Novel Ge Waveguide Platform on Ge-on-Insulator Substrate for Mid-Infrared Photonics

J. Kang1,2, X. Yu1,2, M. Takenaka1,2, and S. Takagi1,2


P-50

Wide-band Slow Light Effects in Si Photonic Crystal Modulators

Y. Hinakura1, Y. Terada1, T. Tamura1, and T. Baba1


P-51

Waveguide Butt-Joint Ge-PIN-PDs with Si Recesses

H. Ono1, T. Simoyama1, S. Okumura1, M. Imai1, and H. Yaegashi1

(1 PETRA)

P-52

Simulation of Carrier-depletion Strained SiGe Optical Modulators based on Interleaved PN Junctions

K. Takeuchi1, Y. Kim1, M. Takenaka1, and S. Takagi1

(1 Univ. Tokyo)

P-53

Lasing Properties of GaInAsP/InP Membrane Distributed-Reflector (DR) Laser

T. Tomiyasu1, T. Hiratani1, D. Inoue1, T. Amemiya2, N. Nishiyama1, and S. Arai1,2


P-54

Compact 8x8 Silicon Photonic Switch Module with Spot Size Converters for Low-loss, Polarization-insensitive

Optical Coupling between Chip and Fibers

S. Nakamura1, S. Yanagimachi1, H. Takeshita1, A. Tajima1, T. Hino1, and K. Fukuchi1

(1 NEC)

P-55

Wavelength Filters with Low Spectral Variation Fabricated by using 300-mm Silicon Photonics Integration

Platform

T. Horikawa1,2, S.-H. Jeong1, D. Shimura1, M. Tokushima1, K. Kinoshita1, and T. Mogami1

(1 PETRA, 2 AIST)

P-56

Effect of Capping Layer Growth Conditions on the Surface Morphology of InAs/GaAs Quantum Dot Wafers

M. Kakuda1, K. Kuruma2, J. Kwoen1, Y. Ota1, K. Watanabe1,2, S. Iwamoto1,2, and Y. Arakawa1,2


P-57

Improvement of Thermal Process Tolerance of Directly Bonded GaInAsP/SOI Wafer by Stressed SiNx

Deposition

S. Inoue1, S. MD T. Hasan1, J. Suzuki1, Y. Hayashi1, T. Amemiya2, N. Nishiyama1, and S. Arai1,2


P-58

Reduction of Driving Voltage of GaInAsP/InP Membrane Fabry-Pérot Lasers

K. Fukuda1, Y. Atsuji1, T. Hiratani1, D. Inoue1, T. Amemiya2, N. Nishiyama1, and S. Arai1,2


P-59

Proposal of a Wavelength-Selective Switch Structure with a Mach-Zehnder Interferometer Incorporating

Microring Resonators

K. Miura1, Y. Shoji2, and T. Mizumoto1


1st international symposium on photonics and electronics...

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