agilent’s role in novel materials research: techniques to ...€¦ · huili grace xing,...
TRANSCRIPT
Agilentrsquos role in novel materials research
techniques to characterize Graphene and
Graphene-based device
Giovanni DrsquoAmore
Marketing Development
Manager
Component Test Division
Agilent Technologies
1
Page 2
The first graphene samples formed were produced by
pulling atom thick layers from a sample of graphite using
sticky taperdquo
What is Graphene
This research was awarded of the Nobel prize in Physic in 2010 by
Andrei Geim and Kostya Novoselov at the University of Manchester
Material of a post- silicon era
Graphene
ldquo the mother of all graphitic materialsrdquo
3D
HOPG Carbon nanotube (CNT)
1D 2D
Electrons in graphene are more than 100 times
mobile than in silicon (even in room temperature)
High thermal conductivity
High optical transmittance
Material of unique
mechanical electrical
and thermal properties
Page 4
Source Manchester university Frost amp Sullivan
Graphene Timeline
What are the applications of Graphene
Page 5
THz modulator Credit Berardi Sensale-Rodriguez and Huili
Grace Xing University of Notre Dame
Graphene transistor
Graphene Gas Sensor Credit Korea University Seoul
Graphene coating
Copyright copy 2012 Elsevier
What are the applications of Graphene
Page 6
Bendable Graphene Battery Credit KAIST university Korea
Flexible electronic (Displays)
Andhellip
bull Supercapacitors
bull Absorbing materials
bull Solar panels
bull Avionic components
bull Prosthetic
bull Flash memory
bull Tennis racquet
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 2
The first graphene samples formed were produced by
pulling atom thick layers from a sample of graphite using
sticky taperdquo
What is Graphene
This research was awarded of the Nobel prize in Physic in 2010 by
Andrei Geim and Kostya Novoselov at the University of Manchester
Material of a post- silicon era
Graphene
ldquo the mother of all graphitic materialsrdquo
3D
HOPG Carbon nanotube (CNT)
1D 2D
Electrons in graphene are more than 100 times
mobile than in silicon (even in room temperature)
High thermal conductivity
High optical transmittance
Material of unique
mechanical electrical
and thermal properties
Page 4
Source Manchester university Frost amp Sullivan
Graphene Timeline
What are the applications of Graphene
Page 5
THz modulator Credit Berardi Sensale-Rodriguez and Huili
Grace Xing University of Notre Dame
Graphene transistor
Graphene Gas Sensor Credit Korea University Seoul
Graphene coating
Copyright copy 2012 Elsevier
What are the applications of Graphene
Page 6
Bendable Graphene Battery Credit KAIST university Korea
Flexible electronic (Displays)
Andhellip
bull Supercapacitors
bull Absorbing materials
bull Solar panels
bull Avionic components
bull Prosthetic
bull Flash memory
bull Tennis racquet
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Material of a post- silicon era
Graphene
ldquo the mother of all graphitic materialsrdquo
3D
HOPG Carbon nanotube (CNT)
1D 2D
Electrons in graphene are more than 100 times
mobile than in silicon (even in room temperature)
High thermal conductivity
High optical transmittance
Material of unique
mechanical electrical
and thermal properties
Page 4
Source Manchester university Frost amp Sullivan
Graphene Timeline
What are the applications of Graphene
Page 5
THz modulator Credit Berardi Sensale-Rodriguez and Huili
Grace Xing University of Notre Dame
Graphene transistor
Graphene Gas Sensor Credit Korea University Seoul
Graphene coating
Copyright copy 2012 Elsevier
What are the applications of Graphene
Page 6
Bendable Graphene Battery Credit KAIST university Korea
Flexible electronic (Displays)
Andhellip
bull Supercapacitors
bull Absorbing materials
bull Solar panels
bull Avionic components
bull Prosthetic
bull Flash memory
bull Tennis racquet
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 4
Source Manchester university Frost amp Sullivan
Graphene Timeline
What are the applications of Graphene
Page 5
THz modulator Credit Berardi Sensale-Rodriguez and Huili
Grace Xing University of Notre Dame
Graphene transistor
Graphene Gas Sensor Credit Korea University Seoul
Graphene coating
Copyright copy 2012 Elsevier
What are the applications of Graphene
Page 6
Bendable Graphene Battery Credit KAIST university Korea
Flexible electronic (Displays)
Andhellip
bull Supercapacitors
bull Absorbing materials
bull Solar panels
bull Avionic components
bull Prosthetic
bull Flash memory
bull Tennis racquet
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
What are the applications of Graphene
Page 5
THz modulator Credit Berardi Sensale-Rodriguez and Huili
Grace Xing University of Notre Dame
Graphene transistor
Graphene Gas Sensor Credit Korea University Seoul
Graphene coating
Copyright copy 2012 Elsevier
What are the applications of Graphene
Page 6
Bendable Graphene Battery Credit KAIST university Korea
Flexible electronic (Displays)
Andhellip
bull Supercapacitors
bull Absorbing materials
bull Solar panels
bull Avionic components
bull Prosthetic
bull Flash memory
bull Tennis racquet
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
What are the applications of Graphene
Page 6
Bendable Graphene Battery Credit KAIST university Korea
Flexible electronic (Displays)
Andhellip
bull Supercapacitors
bull Absorbing materials
bull Solar panels
bull Avionic components
bull Prosthetic
bull Flash memory
bull Tennis racquet
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Agilent Role in GrapheneNano technology Science
Graphene
Page 7
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 8
Agilent instruments for GrapheneNano technology
Parametric Analyzer
Network Analyzer
Impedance Material Analyzer
Pulse Generator SourceMeasure Unit
Digital Multimeter
LCR Meter
Power Supply
Oscilloscope
Measurements
VoltageCurrent
IV curves
Impedance
Capacitance
Resistance
Conductance
S-parameters
Dielectric characteristics
Frequency Response
Time Response
Pulse Stimulus
DC power
hellip
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Graphene Material Validation amp Measurement
Instruments
Parametric Analyzer
Networkimpedance
Analyzer
SourceMeasure Unit
Measurements
Sheet Resistance
S-parameters
Dielectric
characteristics
Frequency
Response
Time Response
Pulse Stimulus
DC power
Applications
Speciific feature ( ie
absorption loss heat transfer)
Mw amp THz Graphene
Characterization
DC Characterization of Graphene
structure
I Wave
T Wave
A Wave
R Wave
Software
Instruments control
Material
characteristics
S-parameters
Curve fitting
Optimization
Page 9
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Sheet resistance measurement
V +-
I +-
Vs
ub +
-
Page 10
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Graphene characterization
Single post-dielectric resonators operating on their quasi TE011
modes were used for the measurement of the surface resistance
and conductivity of graphene films grown on semi-insulating
SiC
Measurement details
THz source
THz receiver
Paper details
Measurements of the sheet resistance and conductivity of thin
epitaxial
graphene and SiC films
J Krupka1 and W Strupinski2a
1Institute of Microelectronics and Optoelectronics Warsaw University of
Technology Koszykowa 75
00-662 Warsaw Poland
2Institute of Electronic Materials TechnologyWolczynska 133 01-919
Warsaw Poland
copy 2010 American Institute of Physics doi10106313327334 For more info wwwqwedeu
Page 11
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
THz Graphene characterization
Frequency domain measurements of the absolute value of
multilayer graphene (MLG) and single-layer graphene
(SLG) sheet conductivity and transparency from DC to 1 THz
Measurement details
THz source
THz receiver
Paper details
Terahertz Graphene Optics
Nima Rouhi1 Santiago Capdevila2 Dheeraj Jain1 Katayoun Zand1 Yung
Yu Wang1 Elliott Brown3 Lluis Jofre2
and Peter Burke1 (1048589)
1 Integrated Nanosystems Research Facility Department of Electrical
Engineering and Computer Science University of California
Irvine CA 92697 USA
2 Universitat Politegravecnica de Catalunya Barcelona Spain
3 Wright State University Dayton OH 45435 USA
Received 13 June 2012 Revised 7 August 2012 Accepted 9 August
2012
copy Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012
Frequency extenders allow
measurements to 11 THz
Page 12
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Graphene as absorbing material
First experimental results on the electromagnetic
interference (EMI) shielding effectiveness (SE) of
monolayer graphene The monolayer CVD graphene has
an average SE value of 227 dB corresponding to 40
shielding of incident waves CVD graphene shows more
than seven times (in terms of dB) greater SE than gold film
The dominant mechanism is absorption rather than
reflection and the portion of absorption decreases with an
increase in the number of graphene layers Our modeling
work shows that plane-wave theory for metal shielding is
also applicable to graphene The model predicts that ideal
monolayer graphene can shield as much as 978 of EMI
This suggests the feasibility of manufacturing an ultrathin
transparent and flexible EMI shield by single or few-layer
graphene
Measurement details THz source
THz receiver
Paper details
Electromagnetic interference shielding effectiveness of monolayer
graphene
Seul Ki Hong Ki Yeong Kim Taek Yong Kim Jong Hoon Kim
Seong Wook Park Joung Ho Kim and Byung Jin Cho
Department of Electrical Engineering KAIST 291 Daehak-Ro Yuseong-
gu Daejeon 305-701 Korea
Online at stacksioporgNano23455704
I Wave
T Wave
A Wave
R Wave
Page 13
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
THz modulator
CREDIT Berardi Sensale-Rodriguez
Huili Grace Xing University of Notre Dame
The graphene-based THz devices proposed and developed
by the group so far consist of a layer of graphene and
another two-dimensional layer of electrons separated by a
thin insulator The graphene layer affects the properties of
the waves passing through the material while the insulating
layer serves to create a nonconductive space between the
graphene and second electron layer By applying a voltage
between these layers the absorption of THz waves can be
tuned from close to zero to almost 100 percent
Measurement details
THz source
THz receiver
Frequency extenders allow
measurements to 11 THz
Page 14
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Graphene-based Devices
Devices Measurements
DC Characterization
bull IV measurement
bull CV measurement
bull Transconductance
RF amp Mw Characterization
bull S-parameters
bull Ft
bull Impedance
measurement
bull Frequency response
Software
ICCAP MBP MQA
bull IV measurement
bull CV measurement
bull Spice model card
creation
bull Spice model card
validation
Instruments
Parametric Analyzer
Network Analyzer
SourceMeasure Unit
Page 15
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 16
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu Keith A Jenkins Alberto Valdes-Garcia Damon B
Farmer Yu Zhu Ageeth A Bol
Christos Dimitrakopoulos Wenjuan Zhu Fengnian Xia Phaedon
Avouris and Yu-Ming Lin
IBM Thomas J Watson Research Center Yorktown Heights New York 10598
United States copy 2012 American Chemical Society Nano Lett 2012 12
Evaluation of devices based on CVD grown Graphene and epitaxial Graphene on SIc
High Frequency S parameters up to 30 GHz were
measured on a PNA with standard GSG probes
showing a theoretical Ft of 300GHz
DC Characterization is performed using a B1500A
parametric analyzer
Measurement details
High Frequency Graphene Transistor
Semiconductor Analyzer Network Analyzer
Paper details
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Shielding box
Source Drain
Side Gate
Si Sub
SiO 2
Carbon Nanotube
Back Gate
Guard
Co-axial Cable
SMU 1
SMU 2
S
SMU 3
SMU 4
Chuck
Chuck Guard
Back Gate
connection Circuit common
Guard
Guard
Guard
Force
Force
Force
Force
Triaxial Cable Triaxial connector
Page 17 Page 17
Carbon NanotubeGraphene FET SET
Semiconductor
Device Analyzer
Measurement details Paper details
Agilent B1500A Semiconductor Device Analyzer
Developed I-V curves using the built-in application
software for CNT FET characterization
Measuring CNT FETrsquos and CNT SETrsquos using the
Agilent B1500A
Web site wwwagilentcomfindnano
Application Note 5989-2842EN
Complete characterization of CNT FETrsquos or SETrsquos
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Agilent Role in GrapheneNano technology Science
Graphene
Page 18
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 19
Atomic Force Microscopy (AFM)
bull Enables scientists to image and manipulate atoms and molecules under normal lsquoroomrsquo conditions
bull Is the only technique to allow imaging of molecules in liquids
bull Allows almost an unlimited number of variations for measuring properties or interactions at the molecular level
bull Provides the ability to directly measure single molecule affinities by attaching to a drug antibody or even a virus
What is AFM
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 20
Images obtained with AFM equipment ndash diverse
applications
Electronic Materials Material Science Life Sciences
Image showing the
aggressiveness of CHO
cancerogenous cells Scan
size 40 um
SMM dCdV image of doped
SiGe device Scan size
10nm
Image of Polydiacetylene
Crystal showing molecular
structure Scan size 25nm
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Examples of high-resolution AFM on Graphene
A Exfoliated few-layer
graphene (FLG) on silica
B Exfoliated FLG on micro-
fabricated silica
C Single-layer graphene
oxide (GO) nanosheets on
mica
D GO-silver nanoparticle
composite material
Graphene is an atomic-scale honeycomb
lattice made of carbon atoms
March the 13 2014
Moscow
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 22
Scanning Microwave Microscopy System (SMM)
Coaxial cable
Agilent PNA
Scanning AFM in X and Y
and Z (closed loop)
Agilent 5400
AFMSPM
Instrument
Agilent Precision
Machining and Process
Technologies to deliver
RFMW to the conductive tip
Page 22
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Near-Field Scanning Microwave Microscopy (SMM)
AFM cantilever
sample
Dopant density
(Atomscm3)
Capacitance
(attoFarad)
Measurement Modes in SMM
The reflected signal is analyzed
and absolute capacitances dopant
profiles or changes in dielectric
constants are visualized
A Network Analyzer (VNA) is connected via a
waveguide to a full-metal AFM cantilever by which a
near-field microwave is passed to the sample while
scanning the surface
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Near-Field Scanning Microwave Microscopy (SMM)
Capacitance (Farad)
Topography and
Capacitance on
few-layer
hexagonal
boron nitride
(h-BN) ultrathin
films revealing
rich surface
structures
Topography
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 25
Complementing SMM with Agilent EMPro 3DEM simulations
Measurement details Paper details
Agilent 5400 AFMSPM
Agilent PNA
Electromagnetic Simulations at the Nanoscale
EMPro Modeling and Comparison to SMM
Experiments
Web site wwwagilentcomfindafm
Application Note 5991-2907EN
EMPro software efficiently complements SMM in
- Understanding of the underlying electromagnetic field
- Physical properties (complex impedance permittivity
permeability)
- 3D sample geometry AFM tip diameter and shaft angle and
measurement frequency
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Page 26
Graphene Images obtained with AFM equipment
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You
Agilent Role in GrapheneNano technology Science
Graphene
Page 27
Thank You