amorphous film of high entropy alloy deposited by direct current magnetron sputtering

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    Amorphous film of high entropy alloy deposited by direct

    current magnetron sputtering#

    LI Jianchen, ZHU Jianbo* 5

    (Department of Materials Science and Engineering, Jilin University, Changchun 130021)

    Foundations: NNSFC (Grant No. 50571040); National Foundation of Doctoral Station (Grant No.

    20100061110019)

    Brief author introduction:Li Jianchen(1957-), Male, Professor,Main research: Metal materials. E-mail:

    [email protected]

    Abstract: In this paper, The amorphous films of AlFeCoNiCuZrV multicomponent high-entropy alloy

    were deposited by direct current magnetron sputtering in the mixture atmosphere of Ar and O2. The

    results demonstrate that the chemical composition, microstructure, and mechanical properties of the

    amorphous films intimately rely on the concentration of O2 in the atmosphere mixture. When O2 flow 10 ratio increases from 0 to 50%, the thickness of the films decreases, whereas the roughness firstly

    decreases and then increases. At the O2 flow ratio of 30%, a perfect dense and smooth amorphous

    nitride film could be achieved. While the hardness and Youngs modulus of the film reach the maximum values of 12 and 166 GPa, respectively.

    Key words: High entropy alloy; amorphous film; properties; magnetron sputtering 15

    0 Introduction

    The conventional alloys generally consist of one principal element associated with a

    substantial amount of other elements to enhance the properties and processing [1], which differ

    from the high-entropy alloy (HEA) recently proposed by Yeh et al. [2, 3]. HEA is a novel concept 20

    for the alloy system that has multiple principal elements with equimolar or near-equimolar ratios

    in the rang of 5-35 at.%. In recent years, HEA films have been widely studied, such as TiVCrZrHf

    film [4], AlCrMoTaTiZr film [5, 6], etc. Moreover, HEA films have been proposed for the

    potential applications as protective films [7-9], wear-resistant materials [10], corrosion-resistant

    materials [11], and coatings in communication devices [12]. That is due to their interesting 25

    properties, such as high hardness [13], strength [14, 15], wear resistance [16, 17], and

    microstructure stability against heat treatment [18-20].

    It is known that the transition metal nitride and oxide coatings are usually much harder, more

    chemically inert, but brittler than the original metals or alloys. This has stimulated recent

    explorations for improving the mechanical properties of alloys. In previous work [21, 22], we have 30

    developed the novel HEA alloys (i.e. FeCoNiCu system) with a single FCC crystalline structure,

    which exhibits good plastic properties with the tensile strain up to 18%. Musil et al. reported the

    hard and super-hard Zr-Ni-N nanocomposite films with the hardness of 40 GPa [23]. The similar

    strengthening effect was also revealed in VN [24]. Moreover, the addition of other element, such

    as Al, was found to further improve the thermal stability of the film [25, 26]. Based on the above 35

    observations, the multicomponent FeCoNiCuVZrAl film is expected to possess excellent

    mechanical properties.

    In this contribution, the amorphous films of AlFeCoNiCuZrV HEA are prepared by using

    direct current magnetron sputtering system at a low depositing temperature. The amorphization

    occurs probably due to the enhanced glass-forming ability for the alloys containing more than 40

    three elements [27], as well as the limited diffusion of the elements at the low depositing

    temperature [28]. In addition, the composition, microstructure, hardness and Young modulus of

    the amorphous film were systematically investigated and discussed.

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    1 Experimental methods

    The AlFeCoNiCuZrV HEA was melted for at least 5 times by the arc melting-method under a 45

    purified argon gas atmosphere. Then, it was shaped into a disc of 60 mm in diameter and 5 mm in

    thickness as a target. Table 1 lists the composition of the target and the atomic ratios of each

    element measured by energy dispersive spectrometry (EDS). Quartz glass wafers were cleaned

    sequentially in de-ionized (DI) water, acetone and DI water, for the following deposition of the

    nitride films of AlFeCoNiCuZrV by DC magnetron sputtering. In a mixture atmosphere of Ar and 50

    N2, the nitride films with the thickness of about 12 m were deposited under a plasma power of

    30 W, a constant working pressure of 0.9 Pa, a substrate bias of 98 V, a deposited time of 2 hours

    at room temperature. The distance between the substrate and the target was set as 75 mm. The

    nitrogen flow ratio RN = O2/(Ar+O2) was precisely adjusted by varying the O2 flow rate from 0 to

    30 sccm with a constant Ar flow rate of 30 sccm. The phase structure analysis of the target and 55

    nitride films was performed on Rigaku D/max 2500 X-ray diffractometer at 50 KV and 250 mA

    (XRD, D/Max 2500pc) with the scanning angles ranging from 20 to 90 degree at a scanning rate

    of 2 degree/min. Both the surface morphology and thickness of the deposited films were observed

    by field-emission scanning electron microscopy (FESEM, JEOL JSM 6700F). The chemical

    compositions of the films were analyzed by EDS. The hardness and Youngs modulus of the films 60

    were measured by a nanoindenter (XP nanomechanical testing system, MTS Corporation), during

    which the penetration depth of the indenter was controlled at about 1/10 of the film thickness to

    avoid substrate effect.

    Table 1 Composition of the AlFeCoNiCuZrV high-entropy alloy target (at.%)

    Element Fe Co Ni Cu V Zr Al

    Nominal composition 14.28 14.28 14.28 14.28 14.28 14.28 14.28

    Composition By EDS 13.96 13.95 13.20 13.83 14.57 15.19 15.31

    2 Results and discussion 65

    Fig. 1 shows the XRD pattern of the target of AlFeCoNiCuZrV HEA. As indicated, the

    crystalline structures are composed of (cubic), (cubic) and (monoclinic) phases with the

    space group of Fm3m (225), Im3m (229) and C2/m(12), respectively. Fig. 2 illustrates the XRD

    patterns of the films of AlFeCoNiCuZrV alloy deposited under different O2 flow ratios (RN). It can

    be clearly seen that all the films exhibit amorphous structure, dramatically different from that of 70

    the as-melted HEA target shown in Fig. 1. This phenomenon was also observed in the preparation

    of the nitride films of the AlCrSiTiV [29], AlCrMoSiTi [30], and AlMoNbSiTaTiVZr [31], the

    oxide films of AlCoCrCu0.5NiFe [32] and AlCrTaTiZr HEA [33].

    The formation of the amorphous films during the fabrication is reasonable according to the

    rules proposed by Inoue [27] that the glass-forming ability can be strengthened for 75

    multicomponent systems. From a thermodynamical point of view, the large glass-forming ability

    is obtained under the condition of low Gibbs free energy G (T) for the transformation from liquid

    to crystalline phase, where G = Hf - TSf with Hf and Sf being the enthalpy and entropy of

    fusion, respectively. According to the above equation, the low G value is obtained in the case of

    low Hf and large Sf. The large Sf is expected to be obtained in multicomponent alloy systems, 80

    because Sf is proportional to the number of microscopic states. The G at a constant temperature

    also decreases in the cases of low chemical potential caused by the low enthalpy, high reduced

    glass transition temperature, and large solid/liquid interface energy. Based on these

    thermodynamical considerations, it can be concluded that the multicomponent increases the dense

    random packing, which is favor of the decrease of Hf and the increase of solid/liquid interface 85

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    energy. This is consistent with the result that a larger glass-forming ability has been obtained for

    the above multicomponent systems. In conclusion, the low enthalpy, the great difference between

    the depositing temperature of films and the glass transition temperature, and the large solid/liquid

    interface energy benefit the formation of the amorphous films. From Fig. 2, we can find that the

    film without oxygen is also amorphous. Thus, the RN has almost no effect on the amorphous 90

    formation. However, the RN has great effects on the chemical compositions, thickness,

    morphology, hardness and Young's Modulus of the films, which will be discussed later.

    Fig. 1 X-Ray diffraction curve of the AlFeCoNiCuZrV target.

    20 40 60 80 1000

    100

    200

    300

    400

    500

    600

    700

    800

    900

    1000

    Inte

    nsi

    ty(C

    PS

    )

    0%

    10%

    30%

    50%

    95 Fig. 2 X-Ray diffraction curves of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).

    Fig. 3 shows the chemical compositions of the multicomponent AlFeCoNiCuZrV films

    deposited under different RN. When RN = 0, the concentration (atomic ratio) of each metallic

    element in the film is rather close to that in the AlFeCoNiCuZrV target, whose composition is

    listed in Table 1. Oxygen concentration in the film rises sharply to 55 at.% when the oxygen flow 100

    ratio (R0) is set to 2.5%. Compared with nitride films prepared based on the same alloy, where the

    concentration of nitrogen was only 39 at.% at a much higher flow ratio of 9%, it is seen that

    oxygen has a much stronger tendency to react with the individual metal atoms than nitrogen does.

    This is supported by the significantly larger heat of formation of the metal oxides relative to

    corresponding metal nitrides. For example, the heat of formation of TiN is only 338 kJ/mol [34], 105

    while that of TiO2 is 944 kJ/mol [35]. When R0 is further increased, concentration of oxygen

    also increases and then saturates near 67 at.%.

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    0 10 20 30 40 500

    10

    20

    30

    40

    50

    60

    70

    80

    Co

    nc

    en

    tra

    tio

    n (

    at%

    )

    O2/(O

    2/Ar)ratio(%)

    Al

    V

    Fe

    Co

    Ni

    Cu

    Zr

    O

    Fig. 3 Chemical compositions of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).

    Table 2 gives the thickness of the AlFeCoNiCuZrV films deposited under different RN. The 110

    largest and smallest thicknesses are 2.100 m (RN = 0) and 0.875 m (RN = 50%), respectively. It

    is also found that the thicknesses of the films decrease with the increasing RN. This originates from

    the formation of the oxide film at the target surface due to the good affinity of all the target

    elements with oxygen, which hinders the atoms from sputtering. It is a typical result of target

    poisoning [36]. Additionally, oxygen ions are known as less effective as argon ions for sputtering 115

    [36]. Therefore, as the two gas species have comparable collision cross-sections for ionization [37],

    a greater proportion of the target current will be carried by oxygen ions at higher oxygen partial

    pressures, inducing the decrease in the sputtering rate. Moreover, when more O2 are added, more

    metallic oxide are formed on the substrate, which enhances the internal stress of the film and

    inhibits the growth. Another aspect is probably due to the fact that more metallic oxide is pumped 120

    out of deposition chamber along with exhaust gas [32].

    Table 2 Thickness of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).

    RN 0 10% 30% 50%

    Thickness (m) 6.450 3.545 2.432 1.725

    Fig. 4 shows the top-view FESEM images of the AlFeCoNiCuZrV films deposited under

    different RN, illustrating the evolution of morphology. It can be see that the films are composed of

    nanoparticles with different geometric morphology as RN changes. When RN = 0, an amount of 125

    nanoparticles with the size of about 10 to 25 nm gather together, as shown in Fig. 4(a). With

    increasing RN, the surface of the film becomes smoother and forms a smooth coating [see Fig.

    4(b)]. Fig. 4(c) shows a morphology for a perfect dense amorphous AlFeCoNiCuZrV film

    obtained at RN = 30%, where the surface is much smoother and cleaner than other films. This

    decrease in the roughness at the higher nitrogen flow rate could be attributed to the reduction in 130

    the arrival rate of the sputtered species, which can be reflected by the decrease of the film

    thickness and corresponds to the structure zone models [38, 39]. There is more energy of per

    depositing atom that leads to the formation of denser coatings with reduced surface roughness.

    However, when the RN is increased to 50%, the surface become rougher [Fig. 4(d)], and the dense

    amorphous coating seems to be destructed. That is because with further increasing RN, the target 135

    poisoning is enhanced and the arrival rate of the sputtered species becomes so low that there are

    not enough sputtered species arriving at the substrate. Therefore, the film surfaces become looser

    and have more micro-holes. Therefore, RN of 30% is the just right ratio to form the smooth and

    dense amorphous AlFeCoNiCuZrV film.

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    140 (a) (b)

    (c) (d)

    Fig. 4 FESEM morphology of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN): (a) RN = 0;

    (b) RN = 10%; (c) RN = 30%; (d) RN = 50%. 145

    Fig. 5 plots the hardness and Youngs modulus of the AlFeCoNiCuZrV films as a function of

    RN. For the AlFeCoNiCuZrV film without the addition of O2, the hardness and Youngs modulus

    are 8.6 and 153 GPa, respectively. They are relatively superior to typical films of pure metals and

    alloys, which is mainly caused by the great solid-solution strengthening effect from the addition of

    a large amount of different-size atoms. With addition of O2, the hardness and modulus increase 150

    and reach maximum values of 12 and 166 GPa for the film deposited at RN = 30%. That might be

    due to the perfect dense and smooth amorphous structure. With further increasing RN, the surface

    becomes rougher and looser, as shown in Fig. 4(d). Meanwhile the micro-holes among particles

    increase in size. Therefore, the hardness and modules decrease.

    0 10 20 30 40 508

    10

    12

    14

    16

    18

    20

    Hardness

    Young's Modulus

    O2/(O2+Ar)ratio (%)

    Ha

    rdn

    es

    s (

    Gp

    a)

    140

    145

    150

    155

    160

    165

    170

    175

    180

    185

    Yo

    un

    g's M

    od

    ulu

    s

    155 Fig. 5 Hardness and Young's Modulus of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).

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    3 Conclusion

    The films of AlFeCoNiCuZrV high-entropy alloy have been deposited successfully using

    direct current magnetron sputtering. All the films exhibit amorphous structure, dramatically

    different from the as-melted HEA target. The morphology and mechanical properties of these 160

    amorphous films depend on the oxygen flow ratio. The thickness of films decreases with the

    increasing O2 flow ratio. The biggest and smallest thicknesses are 2.100 m (RN = 0) and 0.875

    m (RN = 50%), respectively. a perfect dense and smooth amorphous film is obtained with the

    hardness and Youngs modulus up to the maximum values of 12 and 166 GPa, respectively.

    References 165

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    130021 250 Ar O2 AlFeCoNiCuZrV 0-50% O2 30% 12GPa 166 GPa 255 TG113