amorphous film of high entropy alloy deposited by direct current magnetron sputtering
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Amorphous film of high entropy alloy deposited by direct
current magnetron sputtering#
LI Jianchen, ZHU Jianbo* 5
(Department of Materials Science and Engineering, Jilin University, Changchun 130021)
Foundations: NNSFC (Grant No. 50571040); National Foundation of Doctoral Station (Grant No.
20100061110019)
Brief author introduction:Li Jianchen(1957-), Male, Professor,Main research: Metal materials. E-mail:
Abstract: In this paper, The amorphous films of AlFeCoNiCuZrV multicomponent high-entropy alloy
were deposited by direct current magnetron sputtering in the mixture atmosphere of Ar and O2. The
results demonstrate that the chemical composition, microstructure, and mechanical properties of the
amorphous films intimately rely on the concentration of O2 in the atmosphere mixture. When O2 flow 10 ratio increases from 0 to 50%, the thickness of the films decreases, whereas the roughness firstly
decreases and then increases. At the O2 flow ratio of 30%, a perfect dense and smooth amorphous
nitride film could be achieved. While the hardness and Youngs modulus of the film reach the maximum values of 12 and 166 GPa, respectively.
Key words: High entropy alloy; amorphous film; properties; magnetron sputtering 15
0 Introduction
The conventional alloys generally consist of one principal element associated with a
substantial amount of other elements to enhance the properties and processing [1], which differ
from the high-entropy alloy (HEA) recently proposed by Yeh et al. [2, 3]. HEA is a novel concept 20
for the alloy system that has multiple principal elements with equimolar or near-equimolar ratios
in the rang of 5-35 at.%. In recent years, HEA films have been widely studied, such as TiVCrZrHf
film [4], AlCrMoTaTiZr film [5, 6], etc. Moreover, HEA films have been proposed for the
potential applications as protective films [7-9], wear-resistant materials [10], corrosion-resistant
materials [11], and coatings in communication devices [12]. That is due to their interesting 25
properties, such as high hardness [13], strength [14, 15], wear resistance [16, 17], and
microstructure stability against heat treatment [18-20].
It is known that the transition metal nitride and oxide coatings are usually much harder, more
chemically inert, but brittler than the original metals or alloys. This has stimulated recent
explorations for improving the mechanical properties of alloys. In previous work [21, 22], we have 30
developed the novel HEA alloys (i.e. FeCoNiCu system) with a single FCC crystalline structure,
which exhibits good plastic properties with the tensile strain up to 18%. Musil et al. reported the
hard and super-hard Zr-Ni-N nanocomposite films with the hardness of 40 GPa [23]. The similar
strengthening effect was also revealed in VN [24]. Moreover, the addition of other element, such
as Al, was found to further improve the thermal stability of the film [25, 26]. Based on the above 35
observations, the multicomponent FeCoNiCuVZrAl film is expected to possess excellent
mechanical properties.
In this contribution, the amorphous films of AlFeCoNiCuZrV HEA are prepared by using
direct current magnetron sputtering system at a low depositing temperature. The amorphization
occurs probably due to the enhanced glass-forming ability for the alloys containing more than 40
three elements [27], as well as the limited diffusion of the elements at the low depositing
temperature [28]. In addition, the composition, microstructure, hardness and Young modulus of
the amorphous film were systematically investigated and discussed.
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1 Experimental methods
The AlFeCoNiCuZrV HEA was melted for at least 5 times by the arc melting-method under a 45
purified argon gas atmosphere. Then, it was shaped into a disc of 60 mm in diameter and 5 mm in
thickness as a target. Table 1 lists the composition of the target and the atomic ratios of each
element measured by energy dispersive spectrometry (EDS). Quartz glass wafers were cleaned
sequentially in de-ionized (DI) water, acetone and DI water, for the following deposition of the
nitride films of AlFeCoNiCuZrV by DC magnetron sputtering. In a mixture atmosphere of Ar and 50
N2, the nitride films with the thickness of about 12 m were deposited under a plasma power of
30 W, a constant working pressure of 0.9 Pa, a substrate bias of 98 V, a deposited time of 2 hours
at room temperature. The distance between the substrate and the target was set as 75 mm. The
nitrogen flow ratio RN = O2/(Ar+O2) was precisely adjusted by varying the O2 flow rate from 0 to
30 sccm with a constant Ar flow rate of 30 sccm. The phase structure analysis of the target and 55
nitride films was performed on Rigaku D/max 2500 X-ray diffractometer at 50 KV and 250 mA
(XRD, D/Max 2500pc) with the scanning angles ranging from 20 to 90 degree at a scanning rate
of 2 degree/min. Both the surface morphology and thickness of the deposited films were observed
by field-emission scanning electron microscopy (FESEM, JEOL JSM 6700F). The chemical
compositions of the films were analyzed by EDS. The hardness and Youngs modulus of the films 60
were measured by a nanoindenter (XP nanomechanical testing system, MTS Corporation), during
which the penetration depth of the indenter was controlled at about 1/10 of the film thickness to
avoid substrate effect.
Table 1 Composition of the AlFeCoNiCuZrV high-entropy alloy target (at.%)
Element Fe Co Ni Cu V Zr Al
Nominal composition 14.28 14.28 14.28 14.28 14.28 14.28 14.28
Composition By EDS 13.96 13.95 13.20 13.83 14.57 15.19 15.31
2 Results and discussion 65
Fig. 1 shows the XRD pattern of the target of AlFeCoNiCuZrV HEA. As indicated, the
crystalline structures are composed of (cubic), (cubic) and (monoclinic) phases with the
space group of Fm3m (225), Im3m (229) and C2/m(12), respectively. Fig. 2 illustrates the XRD
patterns of the films of AlFeCoNiCuZrV alloy deposited under different O2 flow ratios (RN). It can
be clearly seen that all the films exhibit amorphous structure, dramatically different from that of 70
the as-melted HEA target shown in Fig. 1. This phenomenon was also observed in the preparation
of the nitride films of the AlCrSiTiV [29], AlCrMoSiTi [30], and AlMoNbSiTaTiVZr [31], the
oxide films of AlCoCrCu0.5NiFe [32] and AlCrTaTiZr HEA [33].
The formation of the amorphous films during the fabrication is reasonable according to the
rules proposed by Inoue [27] that the glass-forming ability can be strengthened for 75
multicomponent systems. From a thermodynamical point of view, the large glass-forming ability
is obtained under the condition of low Gibbs free energy G (T) for the transformation from liquid
to crystalline phase, where G = Hf - TSf with Hf and Sf being the enthalpy and entropy of
fusion, respectively. According to the above equation, the low G value is obtained in the case of
low Hf and large Sf. The large Sf is expected to be obtained in multicomponent alloy systems, 80
because Sf is proportional to the number of microscopic states. The G at a constant temperature
also decreases in the cases of low chemical potential caused by the low enthalpy, high reduced
glass transition temperature, and large solid/liquid interface energy. Based on these
thermodynamical considerations, it can be concluded that the multicomponent increases the dense
random packing, which is favor of the decrease of Hf and the increase of solid/liquid interface 85
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energy. This is consistent with the result that a larger glass-forming ability has been obtained for
the above multicomponent systems. In conclusion, the low enthalpy, the great difference between
the depositing temperature of films and the glass transition temperature, and the large solid/liquid
interface energy benefit the formation of the amorphous films. From Fig. 2, we can find that the
film without oxygen is also amorphous. Thus, the RN has almost no effect on the amorphous 90
formation. However, the RN has great effects on the chemical compositions, thickness,
morphology, hardness and Young's Modulus of the films, which will be discussed later.
Fig. 1 X-Ray diffraction curve of the AlFeCoNiCuZrV target.
20 40 60 80 1000
100
200
300
400
500
600
700
800
900
1000
Inte
nsi
ty(C
PS
)
0%
10%
30%
50%
95 Fig. 2 X-Ray diffraction curves of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).
Fig. 3 shows the chemical compositions of the multicomponent AlFeCoNiCuZrV films
deposited under different RN. When RN = 0, the concentration (atomic ratio) of each metallic
element in the film is rather close to that in the AlFeCoNiCuZrV target, whose composition is
listed in Table 1. Oxygen concentration in the film rises sharply to 55 at.% when the oxygen flow 100
ratio (R0) is set to 2.5%. Compared with nitride films prepared based on the same alloy, where the
concentration of nitrogen was only 39 at.% at a much higher flow ratio of 9%, it is seen that
oxygen has a much stronger tendency to react with the individual metal atoms than nitrogen does.
This is supported by the significantly larger heat of formation of the metal oxides relative to
corresponding metal nitrides. For example, the heat of formation of TiN is only 338 kJ/mol [34], 105
while that of TiO2 is 944 kJ/mol [35]. When R0 is further increased, concentration of oxygen
also increases and then saturates near 67 at.%.
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0 10 20 30 40 500
10
20
30
40
50
60
70
80
Co
nc
en
tra
tio
n (
at%
)
O2/(O
2/Ar)ratio(%)
Al
V
Fe
Co
Ni
Cu
Zr
O
Fig. 3 Chemical compositions of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).
Table 2 gives the thickness of the AlFeCoNiCuZrV films deposited under different RN. The 110
largest and smallest thicknesses are 2.100 m (RN = 0) and 0.875 m (RN = 50%), respectively. It
is also found that the thicknesses of the films decrease with the increasing RN. This originates from
the formation of the oxide film at the target surface due to the good affinity of all the target
elements with oxygen, which hinders the atoms from sputtering. It is a typical result of target
poisoning [36]. Additionally, oxygen ions are known as less effective as argon ions for sputtering 115
[36]. Therefore, as the two gas species have comparable collision cross-sections for ionization [37],
a greater proportion of the target current will be carried by oxygen ions at higher oxygen partial
pressures, inducing the decrease in the sputtering rate. Moreover, when more O2 are added, more
metallic oxide are formed on the substrate, which enhances the internal stress of the film and
inhibits the growth. Another aspect is probably due to the fact that more metallic oxide is pumped 120
out of deposition chamber along with exhaust gas [32].
Table 2 Thickness of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).
RN 0 10% 30% 50%
Thickness (m) 6.450 3.545 2.432 1.725
Fig. 4 shows the top-view FESEM images of the AlFeCoNiCuZrV films deposited under
different RN, illustrating the evolution of morphology. It can be see that the films are composed of
nanoparticles with different geometric morphology as RN changes. When RN = 0, an amount of 125
nanoparticles with the size of about 10 to 25 nm gather together, as shown in Fig. 4(a). With
increasing RN, the surface of the film becomes smoother and forms a smooth coating [see Fig.
4(b)]. Fig. 4(c) shows a morphology for a perfect dense amorphous AlFeCoNiCuZrV film
obtained at RN = 30%, where the surface is much smoother and cleaner than other films. This
decrease in the roughness at the higher nitrogen flow rate could be attributed to the reduction in 130
the arrival rate of the sputtered species, which can be reflected by the decrease of the film
thickness and corresponds to the structure zone models [38, 39]. There is more energy of per
depositing atom that leads to the formation of denser coatings with reduced surface roughness.
However, when the RN is increased to 50%, the surface become rougher [Fig. 4(d)], and the dense
amorphous coating seems to be destructed. That is because with further increasing RN, the target 135
poisoning is enhanced and the arrival rate of the sputtered species becomes so low that there are
not enough sputtered species arriving at the substrate. Therefore, the film surfaces become looser
and have more micro-holes. Therefore, RN of 30% is the just right ratio to form the smooth and
dense amorphous AlFeCoNiCuZrV film.
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140 (a) (b)
(c) (d)
Fig. 4 FESEM morphology of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN): (a) RN = 0;
(b) RN = 10%; (c) RN = 30%; (d) RN = 50%. 145
Fig. 5 plots the hardness and Youngs modulus of the AlFeCoNiCuZrV films as a function of
RN. For the AlFeCoNiCuZrV film without the addition of O2, the hardness and Youngs modulus
are 8.6 and 153 GPa, respectively. They are relatively superior to typical films of pure metals and
alloys, which is mainly caused by the great solid-solution strengthening effect from the addition of
a large amount of different-size atoms. With addition of O2, the hardness and modulus increase 150
and reach maximum values of 12 and 166 GPa for the film deposited at RN = 30%. That might be
due to the perfect dense and smooth amorphous structure. With further increasing RN, the surface
becomes rougher and looser, as shown in Fig. 4(d). Meanwhile the micro-holes among particles
increase in size. Therefore, the hardness and modules decrease.
0 10 20 30 40 508
10
12
14
16
18
20
Hardness
Young's Modulus
O2/(O2+Ar)ratio (%)
Ha
rdn
es
s (
Gp
a)
140
145
150
155
160
165
170
175
180
185
Yo
un
g's M
od
ulu
s
155 Fig. 5 Hardness and Young's Modulus of the AlFeCoNiCuZrV films deposited under different O2 flow ratios (RN).
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3 Conclusion
The films of AlFeCoNiCuZrV high-entropy alloy have been deposited successfully using
direct current magnetron sputtering. All the films exhibit amorphous structure, dramatically
different from the as-melted HEA target. The morphology and mechanical properties of these 160
amorphous films depend on the oxygen flow ratio. The thickness of films decreases with the
increasing O2 flow ratio. The biggest and smallest thicknesses are 2.100 m (RN = 0) and 0.875
m (RN = 50%), respectively. a perfect dense and smooth amorphous film is obtained with the
hardness and Youngs modulus up to the maximum values of 12 and 166 GPa, respectively.
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130021 250 Ar O2 AlFeCoNiCuZrV 0-50% O2 30% 12GPa 166 GPa 255 TG113