h20r1202
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IHW20N120R2Soft Switching Series
Power Semiconductors 1 Rev. 1.2 July 06
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages• TrenchStop and Fieldstop technology for 1200 V applications
offers :- very tight parameter distribution- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due topositive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:• Inductive Cooking
• Soft Switching Applications
Type V CE I C V CE(sat ),Tj=25°C T j,max Marking Package
IHW20N120R2 1200V 20A 1.55V 175°C H20R1202 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V C E 1200 V
DC collector current
T C = 25°CT C = 100°C
I C
4020
Pulsed collector current, t p limited by T jmax I Cp u l s 60
Turn off safe operating area (V CE ≤ 1200V, T j ≤ 175°C) - 60
Diode forward current
T C = 25°C
T C = 100°C
I F
40
20
Diode pulsed current, t p limited by T jmax I F p u l s 30
Diode surge non repetitive current, t p limited by T jmax
T C = 25°C, t p = 10ms, sine halfwave
T C = 25°C, t p ≤ 2.5µs, sine halfwaveT C = 100°C, t p ≤ 2.5µs, sine halfwave
I F SM
50
130120
A
Gate-emitter voltage
Transient Gate-emitter voltage (t p < 5 ms)
V G E ±20
±25
V
Power dissipation T C = 25°C P t o t 330 W
Operating junction temperature T j -40...+175
Storage temperature T s t g -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1 J-STD-020 and JESD-022
G
C
E
PG-TO-247-3-21
®
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IHW20N120R2Soft Switching Series
Power Semiconductors 2 Rev. 1.2 July 06
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R t h J C 0.45
Diode thermal resistance,
junction – case
R t h J CD 0.45
Thermal resistance,
junction – ambient
R t h J A 40
K/W
Electrical Characteristic, at T j = 25 °C, unless otherwise specified
ValueParameter Symbol Conditions
min. Typ. max.Unit
Static Characteristic
Collector-emitter breakdown voltage V ( BR) CES V G E=0V, I C=500µ A 1200 - -
Collector-emitter saturation voltage V CE( s a t ) V G E = 15V, I C=20A
T j=25°C
T j=125°C
T j=175°C
-
-
-
1.55
1.75
1.85
1.75
-
-
Diode forward voltage V F V G E=0V, I F=20A
T j=25°C
T j=125°C
T j=175°C
-
-
-
1.45
1.6
1.65
1.7
-
-
Gate-emitter threshold voltage V G E( t h ) I C=0.5mA,V C E=V G E
5.1 5.8 6.4
V
Zero gate voltage collector current I CE S V C E=1200V,
V G E=0V
T j=25°C
T j=175°C
-
-
-
-
5
2500
µA
Gate-emitter leakage current I G E S V C E=0V,V G E=20V - - 100 nA
Transconductance g f s V C E=20V, I C=20A - 14.5 - SIntegrated gate resistor R G in t none
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IHW20N120R2Soft Switching Series
Power Semiconductors 3 Rev. 1.2 July 06
Dynamic Characteristic
Input capacitance C i s s - 1887 -
Output capacitance C os s - 59 -Reverse transfer capacitance C r s s
V C E=25V,
V G E=0V, f =1MHz - 47 -
pF
Gate charge QG a t e V C C=960V, I C=20A
V G E=15V
- 143 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 13 - nH
Switching Characteristic, Inductive Load, at T j=25 °C
ValueParameter Symbol Conditions
min. typ. Max.
Unit
IGBT Characteristic
Turn-off delay time t d ( o f f ) - 359 -
Fall time t f - 53 -
Turn-on energy E o n - - -
Turn-off energy E o f f - 1.2 -
ns
Total switching energy E t s
T j=25°C, V C C=600V, I C=20AV G E=0 /15V,
R G=15Ω,
Lσ
2 )=180nH,
C σ 2)
=39pF - 1.2 - mJ
Switching Characteristic, Inductive Load, at T j=175 °C
ValueParameter Symbol Conditions
min. Typ. Max.Unit
IGBT Characteristic
Turn-off delay time t d ( o f f ) - 427 -
Fall time t f - 99 -
Turn-on energy E o n - - -
Turn-off energy E o f f - 2.0 -
ns
Total switching energy E t s
T j=175°C V C C=600V, I C=20A,V G E= 0 /15V,
R G= 15Ω ,
Lσ =180nH
2 ),
C σ =39pF2 )
- 2.0 - mJ
2) Leakage inductance L
σ and Stray capacity C σ due to dynamic test circuit in Figure E.
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IHW20N120R2Soft Switching Series
Power Semiconductors 4 Rev. 1.2 July 06
I C ,
C O L L E C T O R C U R R E N T
10Hz 100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
T C=110°C
T C=80°C
I C ,
C O L L E C T O R C U R R E N T
1V 10V 100V 1000V
1A
10A
DC
10µs
t p=1µs
20µs
500µs
5ms
50µs
f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency for hardswitching (turn-off)
(T j ≤ 175°C, D = 0.5, V CE = 600V,
V GE = 0/+15V, R G = 15Ω)
Figure 2. IGBT Safe operating area
(D = 0, T C = 25°C,
T j ≤175°C;V GE=15V)
P t o t ,
D I S S I P A T E D P O W E R
25°C 50°C 75°C 100°C 125°C 150°C0W
50W
100W
150W
200W
250W
300W
I C ,
C O L L E C T O R C U R R E N T
25°C 50°C 75°C 100°C 125°C 150°C
0A
10A
20A
30A
40A
T C, CASE TEMPERATURE T C, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature(T j ≤ 175°C)
Figure 4. DC Collector current as a function
of case temperature(V GE ≥ 15V, T j ≤ 175°C)
I c
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IHW20N120R2Soft Switching Series
Power Semiconductors 5 Rev. 1.2 July 06
I C ,
C O L L E C T O R C U R R E N T
0V 1V 2V
0A
10A
20A
30A
40A
50A
15V
7V
9V
11V
13V
V GE
=20V
I C ,
C O L L E C T O R C U R R E N T
0V 1V 2V 3V
0A
10A
20A
30A
40A
50A
15V
7V
9V
11V
13V
V GE
=20V
V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic(T j = 25°C)
Figure 6. Typical output characteristic(T j = 175°C)
I C
, C O L L E C T O R C U R R E N T
0V 2V 4V 6V 8V 10V0A
10A
20A
30A
40A
50A
25°C
T J=175°C
V C E ( s a
t ) , C O L L E
C T O R - E M I T T S A T U R A T I O N V O L T A G E
0°C 50°C 100°C 150°C0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
I C =20A
I C =40A
I C =10A
V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic(VCE=20V)
Figure 8. Typical collector-emitter saturationvoltage as a function of junctiontemperature(V GE =15V)
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IHW20N120R2Soft Switching Series
Power Semiconductors 6 Rev. 1.2 July 06
t , S W I T C H I N G T I M E S
0A 10A 20A 30A
100ns
1000ns
t f
t d(off)
t , S W I T C H I N G T I M E S
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
100ns
1000ns
t f
t d(off)
I C , COLLECTOR CURRENT R G, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, T J=175°C,V CE=600V, VGE=0/15V, R G=15Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, T J=175°C, V CE=600V,VGE=0/15V, I C=20A,Dynamic test circuit in Figure E)
t , S
W I T C H I N G T I M E S
25°C 50°C 75°C 100°C 125°C 150°C10ns
100ns t f
t d(off)
V G E ( t h ) ,
G A T E - E M I T T T R S H O L D V O L T A G E
-50°C 0°C 50°C 100°C2V
3V
4V
5V
6V
max.
typ.
min.
T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, V CE=600V,VGE=0/15V, I C=20A, R G=29Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as afunction of junction temperature (I C = 0.5mA)
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IHW20N120R2Soft Switching Series
Power Semiconductors 7 Rev. 1.2 July 06
E ,
S W I T C H I N G E N E R G Y L O S S E S
0A 10A 20A 30A0.0mJ
1.0mJ
2.0mJ
3.0mJ
E off
E ,
S W I T C H I N G E N E R G Y L O S S E S
20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
0.0mJ
1.0mJ
2.0mJ
E off
I C , COLLECTOR CURRENT R G, GATE RESISTOR
Figure 13. Typical turn-off energy as afunction of collector current(inductive load, T J=175°C,V CE=600V, VGE=0/15V, R G=15Ω,Dynamic test circuit in Figure E)
Figure 14. Typical turn-off energy as afunction of gate resistor(inductive load, T J=175°C, V CE=600V,VGE=0/15V, I C=20A,Dynamic test circuit in Figure E)
E , S W
I T C H I N G E N E R G Y L O S S E S
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E off
E , S W
I T C H I N G E N E R G Y L O S S E S
600V 700V0.0mJ
0.5mJ
1.0mJ
1.5mJ
E off
T J, JUNCTION TEMPERATURE V CE , COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical turn-off energy as afunction of junction temperature(inductive load, V CE=600V,VGE=0/15V, I C=20A, R G=15Ω,Dynamic test circuit in Figure E)
Figure 16. Typical turn-off energy as afunction of collector emittervoltage(inductive load, T J=175°C,VGE=0/15V, I C=20A, R G=15Ω,
Dynamic test circuit in Figure E)
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IHW20N120R2Soft Switching Series
Power Semiconductors 8 Rev. 1.2 July 06
V G E ,
G A T E - E M I T T E R V O L T A G E
0nC 50nC 100nC 150nC0V
5V
10V 960V
240V
c ,
C A P A C I T A N C E
0V 10V 20V10pF
100pF
1nF
C rss
C oss
C iss
QGE, GATE CHARGE V CE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge(I C=20 A)
Figure 18. Typical capacitance as a functionof collector-emitter voltage(V GE=0V, f = 1 MHz)
Z t h J C ,
T R A N S
I E N T T H E R M A L R E S I S T A N C E
10µs 100µs 1ms 10ms 100ms0
-3K/W
0-2K/W
0-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Z t h J C ,
T R A N S
I E N T T H E R M A L R E S I S T A N C E
10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
t P, PULSE WIDTH t P, PULSE WIDTH
Figure 19. IGBT transient thermalresistance(D = t p / T )
Figure 20. Diode transient thermalimpedance as a function of pulse width(D=t P/T )
R , ( K / W ) τ , ( s )
0.0788 1.04*10-1
0.183 1.52*10-2
0.162 9.51*10-4
0.0505 4.95*10-5
C 1=τ 1 /R 1
R 1 R 2
C 2=τ 2 /R 2
R , ( K / W ) τ , ( s )
0.0578 1.16*10-1
0.1699 1.88*10-2
0.1392 2.03*10-3
0.087 2.38*10-4
C 1=τ 1 /R 1
R 1 R 2
C 2=τ 2 /R 2
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IHW20N120R2Soft Switching Series
Power Semiconductors 9 Rev. 1.2 July 06
I F ,
F O R W A R D C U R R E N T
0.0V 0.5V 1.0V 1.5V 2.0V0A
5A
10A
15A
0A
5A
0A
5A
175°C
T J =25°C
V F ,
F O R W A R D V O L T A G E
0°C 50°C 100°C 150°C0.0V
0.5V
1.0V
1.5V
2.0V
20A
10A
I F =40A
V F, FORWARD VOLTAGE T J, JUNCTION TEMPERATURE
Figure 21. Typical diode forward current asa function of forward voltage
Figure 22. Typical diode forward voltageas a function of junction temperature
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IHW20N120R2Soft Switching Series
Power Semiconductors 10 Rev. 1.2 July 06
Please refer to mounting instructions for assembly.
PG-TO247-3-21
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IHW20N120R2Soft Switching Series
Power Semiconductors 11 Rev. 1.2 July 06
Figure A. Definition of switching times
Figure B. Definition of switching losses
I r r m
90% I r r m
10% I r r m
di /dt F
t r r
I F
i,v
t QS
QF
t S
t F
V R
di /dt r r
Q =Q Qr r S F
+
t =t t r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)1 2 n
T (t) j
τ1
1
τ2
2
n
n
τ
TC
r r
r
r
r r
Figure D. Thermal equivalentcircuit
Figure E. Dynamic test circuit
Leakage inductance Lσ and Stray
capacity C σ
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IHW20N120R2Soft Switching Series
Power Semiconductors 12 Rev 1 2 July 06
Edition 2006-01
Published byInfineon Technologies AG81726 München, Germany
© Infineon Technologies AG 11/2/06.All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device, Infineon Technologieshereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties ofnon-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the typesin question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that device orsystem. Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.
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