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Arno Smets
Thin film PV Technologies Thin film Silicon PV Technology
Week 5.2
Thin film Silicon solar cell
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
a-‐SixGe1-‐x:H nc-‐SixGe1-‐x:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
a-‐SixGe1-‐x:H nc-‐SixGe1-‐x:H a-SixC1-x:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor Materials IV semiconductors: Si, Ge
a-‐Si:H nc-‐Si:H
a-‐SixGe1-‐x:H nc-‐SixGe1-‐x:H a-‐SixC1-‐x:H nc-‐SixO1-‐x:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllA VlA VA lVA lllVA
llB lB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Amorphous Network
Source: www.youtube.com/watch?v=OyVUmucwhPo
2 Material Phases: amorphous and microcrystalline silicon
sta[onary columnar growth
incuba[on zone substrate
Several 100nm
~30-‐50 nm
Momentum
Energy
Indirect band gap
photon phonon
Comparison with c-‐Si: laDce
2.48 1.24 0.83 0.62 0.50 0.41 106
105
104
103
102
101
100
10-‐1
0.5 1.0 1.5 2.0 2.5 3.0
Wavenlength [micrometers]
Photon [eV]
Absorp[o
n coeffi
cien
t [cm
-‐1]
a-‐Si Ge:H
a-‐Si:H
c-‐Si
alloy Band gap
a-‐Si:H 1.6-‐1.9 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(λ) (x10
9 W m
-‐2 m
-‐1)
0 500 1000 1500 2000 2500
Wavenlength (x10-‐9 m)
AM 1.5
absorp[on no absorp[on
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-‐Si:H
1.1-1.3 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(λ) (x10
9 W m
-‐2 m
-‐1)
0 500 1000 1500 2000 2500
Wavenlength (x10-‐9 m)
AM 1.5
absorp[on no absorp[on
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-‐Si:H
1.1-1.3 eV
a-SiGe:H 1.4-1.6 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(λ) (x10
9 W m
-‐2 m
-‐1)
0 500 1000 1500 2000 2500
Wavenlength (x10-‐9 m)
AM 1.5
absorp[on no absorp[on
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-‐Si:H
1.1-1.3 eV
a-SiGe:H 1.4-1.6 eV
a-SiC:H >1.9 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(λ) (x10
9 W m
-‐2 m
-‐1)
0 500 1000 1500 2000 2500
Wavenlength (x10-‐9 m)
AM 1.5
absorp[on no absorp[on
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-‐Si:H
1.1-1.3 eV
a-SiGe:H 1.4-1.6 eV
a-SiC:H >1.9 eV
nc-SiO:H >2.0 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(λ) (x10
9 W m
-‐2 m
-‐1)
0 500 1000 1500 2000 2500
Wavenlength (x10-‐9 m)
AM 1.5
absorp[on no absorp[on
Defects in the laDce
An a-‐Si:H p-‐i-‐n juncIon
Glass
TCO
a-‐Si:H
Back Reflector
a-‐Si:H: driJ mechanism required for transport
EFermi
Intrinsic a-‐Si:H n-‐a-‐Si:H p-‐a-‐SiC:H
Principle of a-‐Si:H p-‐i-‐n juncIon
EFermi
Intrinsic a-‐Si:H n-‐a-‐Si:H p-‐a-‐SiC:H
Conduc[on band
Valence band
A typical a-‐Si:H p-‐i-‐n juncIon
Glass
TCO
a-‐Si:H
Back Reflector
TCO
p i
n
250 500 750 1000 1250 1500 1750 2000 2250 2500
5800 K Blackbody Spectrum
Radia[on at Sea Level
AbsorpIon Bands
H2O CO2 H2O
H2O
H2O
0
0.5
1
1.5
2
2.5
Sunlight Top of the Atmosphere
Infrared Visible UV Spectral Irradiance (W
/m2 /nm
)
H2O
O2 O3
Wavelength (nm)
Solar RadiaIon Spectrum
Does not cover en[re spectrum!
Glass
TCO
a-‐Si:H
Back Reflector
AbsorpIon a-‐Si:H
250 500 750 1000 1250 1500 1750 2000 2250 2500
5800 K Blackbody Spectrum
Radia[on at Sea Level
AbsorpIon Bands
H2O CO2 H2O
H2O
H2O
0
0.5
1
1.5
2
2.5
Sunlight Top of the Atmosphere
Infrared Visible UV Spectral Irradiance (W
/m2 /nm
)
H2O
O2 O3
Wavelength (nm)
Solar RadiaIon Spectrum
Does not cover en[re spectrum!
Glass
TCO
nc-‐Si:H
Back Reflector
AbsorpIon nc-‐Si:H
250 500 750 1000 1250 1500 1750 2000 2250 2500
5800 K Blackbody Spectrum
Radia[on at Sea Level
AbsorpIon Bands
H2O CO2 H2O
H2O
H2O
0
0.5
1
1.5
2
2.5
Sunlight Top of the Atmosphere
Infrared Visible UV Spectral Irradiance (W
/m2 /nm
)
H2O
O2 O3
Wavelength (nm)
Solar RadiaIon Spectrum
AbsorpIon A-‐Si:H
AbsorpIon nc-‐Si:H
Back Reflector
TCO
a-‐Si:H
µc-‐Si:H
Glass
Beler spectrum coverage!
EFermi
1000 -‐ 2000 nm 150 -‐ 300 nm
The a-‐Si:H / nc-‐Si:H tandem
EFermi
Conduc[on band
Valence band
1000 -‐ 2000 nm 150 -‐ 300 nm
Intrinsic a-‐Si:H
n-‐a-‐Si:H p-‐a-‐SiC:H
p-‐nc-‐Si:H
nc-‐Si:H n-‐nc-‐Si:H
Double-‐juncIon approach
0.0 0.2 0.4 0.6 0.8 1.0 1.4 1.6
J (mA/cm
2 )
Voltage (V)
Single pin
0.0 0.2 0.4 0.6 0.8 1.0 1.4 1.6 0
5
10
30
15
25
20
Voltage (V)
Tandem
0
5
10
30
15
25
20
?
The a-‐Si:H / nc-‐Si:H
Glass flexible substrate
TCO
a-‐Si:H
Back Reflector
a-‐Si:H
nc-‐Si:H
0
5
10
30
15
25
20
Back Reflector
TCO
a-‐Si:H
µc-‐Si:H
Glass
J (mA/cm
2 )
Double-‐juncIon approach
0.0 0.2 0.4 0.6 0.8 1.0 1.4 1.6
J (mA/cm
2 )
Voltage (V)
Single pin
0.0 0.2 0.4 0.6 0.8 1.0 1.4 1.6 0
5
10
30
15
25
20
Voltage (V)
Tandem
0
5
10
30
15
25
20
The a-‐Si:H / nc-‐Si:H
Glass flexible substrate
TCO
a-‐Si:H
Back Reflector
a-‐Si:H
nc-‐Si:H
0
5
10
30
15
25
20
Back Reflector
TCO
a-‐Si:H
µc-‐Si:H
Glass
J (mA/cm
2 )
MulI-‐juncIon a-‐Si:H based solar cells
Ito
a-‐Si:H
nc-‐Si:H
nc-‐Si:H
ΖnΟ
Flexible SS
Ito
a-‐Si:H
a-‐Si:Ge:H
ΖnΟ
Flexible SS
a-‐Si:Ge:H
Ag Ag
Ag Ag Ag Ag
nc-‐Si:H / nc-‐Si:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
a-‐Si:Ge:H / a-‐Si:Ge:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
400 500 600 700 800 900 1000 1100 1200 Wavelength (nm)
180
160
140
120
100
80
60
40
20
0
AM 1.5 sp
ectum (m
W/(cm
2 μm))
B. Yan, Appl. Phys. Le1. 99, 113512 (2011).
a-‐Si:H/a-‐SiGe:H/nc-‐Si:H mul5-‐junc5ons United Solar: IniIal efficiency: 16.3 %
MulI-‐juncIon approach
Ito
a-‐Si:H
a-‐Si:Ge:H
ΖnΟ
Flexible SS
a-‐Si:Ge:H
Ag
Ag Ag
lto
a-‐Si:H
nc-‐Si:H
nc-‐Si:H
ΖnΟ
Flexible SS
Ag
Ag Ag
nc-‐Si:H / nc-‐Si:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
a-‐Si:Ge:H / a-‐Si:Ge:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
Ito
a-‐Si:H
a-‐Si:Ge:H
ΖnΟ
Flexible SS
nc-‐Si:H
Ag
Ag Ag
nc-‐Si:H / a-‐Si:Ge:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
Glass Flexible substrate
TCO
a-‐Si:H
Back Reflector
Back Reflector
TCO
a-‐Si:H
nc-‐Si:H
Glass
a-‐Si:H / nc-‐Si:H p-‐i-‐n / p-‐i-‐n
a-‐Si:H p-‐i-‐n / p-‐i-‐n
10.1% 12.3%
13.4% 16.3% (ini[al)
MulI-‐juncIon approach
lto
a-‐Si:H
nc-‐Si:H
nc-‐Si:H
ΖnΟ
Flexible SS
Ag
Ag Ag
nc-‐Si:H / nc-‐Si:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
Back Reflector
TCO
a-‐Si:H
nc-‐Si:H
Glass
a-‐Si:H / nc-‐Si:H p-‐i-‐n / p-‐i-‐n
12.3%
13.4%
MulI-‐juncIon approach
lto
a-‐Si:H
nc-‐Si:H
nc-‐Si:H
ΖnΟ
Flexible SS
Ag
Ag Ag
nc-‐Si:H / nc-‐Si:H / a-‐Si:H n-‐i-‐p / n-‐i-‐p / n-‐i-‐p
Back Reflector
TCO
a-‐Si:H
nc-‐Si:H
Glass
a-‐Si:H / nc-‐Si:H p-‐i-‐n / p-‐i-‐n
12.3%
13.4%
Glass
Front TCO A-‐Si:H
Black metal
Encapsulant
Glass
Front TCO a-‐Si:H
Black metal
Encapsulant
TF silicon modules manufacturing
Glass
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
Glass
Front TCO
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
Glass
Front TCO
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
Glass
Front TCO a-‐Si:H
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
4. Si:H layers deposition
Glass
Front TCO a-‐Si:H
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
4. Si:H layers deposition
5. Laser scribing: L2
Glass
Front TCO a-‐Si:H
Black metal
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
4. Si:H layers deposition
5. Laser scribing: L2
6. Back metal deposition
Glass
Front TCO a-‐Si:H
Black metal
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
4. Si:H layers deposition
5. Laser scribing: L2
6. Back metal deposition
7. Laser scribing: L3
Glass
Front TCO a-‐Si:H
Black metal
Encapsulant
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
4. Si:H layers deposition
5. Laser scribing: L2
6. Back metal deposition
7. Laser scribing: L3
8. Encapsulant
Glass
Front TCO a-‐Si:H
Black metal
Encapsulant
TF silicon modules manufacturing
1. Glass plates used as substrate carrier
2. Front TCO deposition
3. Laser scribing: L1
4. Si:H layers deposition
5. Laser scribing: L2
6. Back metal deposition
7. Laser scribing: L3
8. Encapsulant
Micromorph Tandem Module
Manufacturing sequence:
Al foil + TCO + a-‐Si:H + back contact + carrier foil
Al foil + series connect + contact wires + curng
+ encapsulant
HyET Solar
Flexible Products
Thank you for your aZenIon!
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