to-220 -3l plastic-encapsulate transistorsaitendo3.sakura.ne.jp/aitendo_data/product_img/... ·...

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 -3L Plastic-Encapsulate Transistors

2SD882 TRANSISTOR (NPN)

FEATURES

Power Dissipation

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 30 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current -Continuous 3 A

PC Collector Power Dissipation 2 W

TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS ( Ta=25 unless otherwise specified℃ )

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V

Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA

Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA

Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA

DC current gain hFE VCE= 2 V, IC= 1A 60 400

Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V

Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency fT VCE= 5V, IC=0.1A f =10MHz

90 MHz

CLASSIFICATION OF hFE

Rank R O Y GR

Range 60-120 100-200 160-320 200-400

TO-220 -3L

2. COLLECTOR

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3. BASE

1 .EMITTER

0 300 600 900 12001

10

100

1000

1 10 100 1000100

1000

1 10 100 10001

10

100

1000

1 10 100 100010

100

1000

0.1 1 1010

100

0 1 2 3 4 5 6 7 80.0

0.5

1.0

1.5

2.0

2.5

COMMON EMITTERVCE= 2V

VBEIC ——

BASE-EMMITER VOLTAGE VBE (mV)

CO

LLE

CTO

R C

UR

RE

NT

I C

(m

A)

T a=2

5℃

T a=1

00℃

3000

β=10

ICVBEsat ——

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (m

V)

COLLECTOR CURREMT IC (mA)

Ta=100 ℃

Ta=25℃

3000

2000

Ta=100 ℃

Ta=25℃

β=10

ICVCEsat ——

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Esa

t (m

V)

COLLECTOR CURREMT IC (mA)

3000

IChFE ——

Ta=100℃

Ta=25℃

DC

CU

RR

EN

T G

AIN

h

FE

COLLECTOR CURRENT IC (mA)

COMMON EMITTERVCE= 2V

3000

f=1MHzIE=0/IC=0Ta=25 ℃

VCB/VEBCob/Cib ——

Cob

Cib

REVERSE VOLTAGE V (V)

CAP

ACIT

ANC

E

C

(pF)

20

500

Static CharacteristicCOMMON EMITTERTa=25 ℃

10mA9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

IB=1mA

CO

LLE

CTO

R C

UR

RE

NT

I C

(A

)

COLLECTOR-EMITTER VOLTAGE VCE (V)

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Typical Characteristics

0 25 50 75 100 125 1500

500

1000

1500

2000

2500

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

N

P

C

(mW

)

AMBIENT TEMPERATURE Ta ( )℃

PC —— Ta

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TO-220-3L Package Outline Dimensions

Min Max Min MaxA 4.470 4.670 0.176 0.184

A1 2.520 2.820 0.099 0.111b 0.710 0.910 0.028 0.036

b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.054D 10.010 10.310 0.394 0.406E 8.500 8.900 0.335 0.350

E1 12.060 12.460 0.475 0.491e

e1 4.980 5.180 0.196 0.204F 2.590 2.890 0.102 0.114h 0.000 0.300 0.000 0.012L 13.400 13.800 0.528 0.543

L1 3.560 3.960 0.140 0.156Φ 3.735 3.935 0.147 0.155

Symbol Dimensions In Millimeters Dimensions In Inches

0.100 TYP2.540 TYP

B,Aug,2016