twin tub cmos

Group member :-

NURUL HANIM BINTI OMAR

NURUL ASYEKIN BINTI KASMI

NURUL HIDAYAHTUR NAZARAH ABDUL WAHAP

RABIATUL ADAWIYAH BINTI IBRAHIM

CMOS Technology depends on using both N-Type and P-Type devices on the same chip.

The two main technologies to do this task are: P-Well The substrate is N-Type. The N-Channel device

is built into a P-Type well within the parent N-Type substrate. The P-channel device is built directly on the substrate.

N-Well The substrate is P-Type. The N-channel device

is built directly on the substrate, while the P-channel device is built into a N-type well within the parent P-Type substrate.

Two more advanced technologies to do this task are:

a) Twin Tub

::Both an N-Well and a P-Well are manufactured on a lightly doped N-type substrate.

b)Silicon-on-Insulator (SOI) CMOS Process

::SOI allows the creation of independent, completely isolated nMOS and pMOS transistors virtually side-by-side on an insulating substrate.

Twin-tub process has highest overall performance compared to n-well & p-well process

This technology provides the basic for separate optimization of the nMOS and pMOS transistors.

For starting material is an n+ or p+ substrate, with a lightly doped epitaxial layer on top.

This epitaxial layer provides the actual substrate on which the n-well and the p-well are formed.

Fabrication involves the implementation of semiconductor processes to build a MOSFET transistor and compatible passive components as an integrated circuit.

MASK 1 – OXIDATION

MASK 2 - PATTERN TO EXPOSE NMOS AND PMOS REGION

MASK 3 - PATTERN POLY ON THE GATE OXIDE

MASK 4 - IMPLANTATION OF P-TYPE

MASK 5 - IMPLANTATION OF N - TYPE

MASK 6 - OXIDE PATTERN FOR CONTACT HOLE

MASK 7 - DEPOSIT METAL AND PATTERN

MASK 8 - PASSIVATION OXIDE AND PATTERN BONDING PADS

8 MASK INVOLVE IN P-WELL FABRICATION PROCESS

15 MASK INVOLVE IN N-WELL FABRICATION

PROCESS

MASK 1 – Grow a thin silicon dioxide region

on a wafer.

MASK 2 - Photoresist is removed and high-

temperature oxidation is performed.

MASK 3 - A global n-type field (channel

stop) implanted is performed.

MASK 4 - A global p-type field (channel stop)

implanted is performed.

MASK 5 - Growth the thick silicon dioxide layer over the entire wafer.

MASK 6 - Growth of the gate thin oxide and deposition of Polysilicon.

MASK 7 - Removal of polysilicon and formation of the sidewall spacers.

MASK 8 - Implantation of NMOS source and drain and contact to n-well.

MASK 9 – Remove sidewall spacers and implant the NMOS lightly doped source/drains.

MASK10 - Implant the PMOS source/drains and contacts to the p- substrate.

MASK 11 - Anneal to activate the implanted ions.

MASK 12 - Deposit a thick oxide layer (BPSG - borophosphosilicate glass).

MASK 13 - Open contacts, deposit first level metal and etch unwanted metal.

MASK 14 - Deposit another interlayer dielectric (CVD SiO2), open contacts, deposit second level metal.

MASK 15 –Etch unwanted metal and deposit a passivation layer and open over bonding pads.

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