TAB

7

1

H2PAK-7

Drain (TAB)

Gate (1)

Driversource (2)

Powersource (3, 4, 5, 6, 7)

N-chG1DS2PS34567DTAB

FeaturesOrder code VDS RDS(on) max. ID

SCTH90N65G2V-7 650 V 24 mΩ 116 A

• Very high operating junction temperature capability (TJ = 175 °C)• Very fast and robust intrinsic body diode• Extremely low gate charge and input capacitances

Applications• Switching applications• Power supply for renewable energy systems• High frequency DC-DC converters

DescriptionThis silicon carbide Power MOSFET device has been developed using ST’sadvanced and innovative 2nd generation SiC MOSFET technology. The devicefeatures remarkably low on-resistance per unit area and very good switchingperformance. The variation of switching loss is almost independent of junctiontemperature.

Product status link

SCTH90N65G2V-7

Product summary

Order code SCTH90N65G2V-7

Marking SCT90N65

Package H2PAK-7

Packing Tape and reel

Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package

SCTH90N65G2V-7

Datasheet

DS12084 - Rev 4 - July 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 650 V

VGSGate-source voltage -10 to 22

VGate-source voltage (recommended operating values) -5 to 18

IDDrain current (continuous) at TC = 25 °C 116

ADrain current (continuous) at TC = 100 °C 82

IDM(1) Drain current (pulsed) 220 A

PTOT Total power dissipation at TC = 25 °C 484 W

Tstg Storage temperature range-55 to 175

°C

TJ Operating junction temperature range °C

1. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.31 °C/W

Rthj-amb Thermal resistance junction-ambient 40 °C/W

SCTH90N65G2V-7Electrical ratings

DS12084 - Rev 4 page 2/14

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V

IDSS Zero gate voltage drain currentVDS = 650 V, VGS = 0 V 10

µAVDS = 650 V, VGS = 0 V, TJ = 150 °C 10

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1.9 3.2 5.0 V

RDS(on) Static drain-source on-resistanceVGS = 18 V, ID = 50 A 18 24

mΩVGS = 18 V, ID = 50 A, TJ = 175 °C 27

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

- 3380 - pF

Coss Output capacitance - 294 - pF

Crss Reverse transfer capacitance - 49 - pF

Qg Total gate charge

VDD = 400 V, ID = 50 A, VGS = -5 to 18 V

- 157 - nC

Qgs Gate-source charge - 43 - nC

Qgd Gate-drain charge - 42 - nC

Rg Gate input resistance f = 1 MHz, ID = 0 A - 1 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A,

RG = 2.2 Ω

- 130 -

µJEoff Turn-off switching energy - 210 -

Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A,

RG = 2.2 Ω, TC = 150 °C

- 135 -

Eoff Turn-off switching energy - 200 -

SCTH90N65G2V-7Electrical characteristics

DS12084 - Rev 4 page 3/14

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 400 V, ID = 50 A,

RG = 2.2 Ω, VGS = -5 to 18 V

- 26 - ns

tf Fall time - 16 - ns

td(off) Turn-off delay time - 58 - ns

tr Rise time - 38 - ns

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Forward on voltage IF = 30 A, VGS = 0 V - 2.5 - V

trr Reverse recovery time

IF = 50 A, di/dt = 4000 A/µs, VDD = 400 V

- 17 - ns

Qrr Reverse recovery charge - 308 - nC

IRRM Reverse recovery current - 30 - A

SCTH90N65G2V-7Electrical characteristics

DS12084 - Rev 4 page 4/14

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

GADG170720191535SOA

10 2

10 1

10 0

10 -1 10 0 10 1 10 2

ID (A)

VDS (V)

Opera

tion i

n this

area

is lim

ited b

y RDS(

on)

IDM

TC = 25 °CTJ ≤ 175°CSingle pulse

tp =10µs

tp =100µs

tp =1ms

tp =10ms

V(BR)DSS

RDS(on) max.

Figure 2. Maximum transient thermal impedance

GADG170720191551ZTH

10 -1

10 -2

10 -3

10 -4

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

ZthJ-C(°C/W)

ton

T

duty = ton / T

duty=0.5

0.20.10.050.020.01

Single pulse RthJ-C = 0.31 (°C/W)

Figure 3. Typical output characteristics (TJ = -50 °C)

GADG110720191014OCH_-50

120

100

80

60

40

20

00 1 2 3 4 5 6 VDS (V)

VGS =16V

VGS =10V

VGS = 8V

VGS = 18, 20V

VGS =12V

VGS =14V

ID (A)

Figure 4. Typical output characteristics (TJ = 25 °C)

GADG120720191341OCH_25

120

100

80

60

40

20

00 1 2 3 4 5 6 VDS (V)

VGS =16, 18, 20V

VGS =6V

VGS =8V

VGS =10V

VGS =12V

VGS =14V

ID (A)

Figure 5. Typical output characteristics (TJ = 175 °C)

GADG190720191144OCH_175

120

100

80

60

40

20

00 1 2 3 4 5 6

ID (A)

VDS (V)

VGS =6V

VGS =8V

VGS =10VVGS =12V

VGS =14,16,18, 20V

Figure 6. Typical transfer characteristics

GADG190720191145TCH

120

100

80

60

40

20

00 4 8 12 16

ID (A)

VGS (V)

VDS = 3 V

TJ = 175 °C TJ = 25 °C

SCTH90N65G2V-7Electrical characteristics (curves)

DS12084 - Rev 4 page 5/14

Figure 7. Typical capacitances

GADG110720191017CVR

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VDS (V)

CISS

CRSS

COSS

f = 1 MHz

Figure 8. Typical gate charge

GADG110720191018QVG

15

10

5

0

-50 30 60 90 120 150

VGS (V)

Qg (nC)

ID = 50 AVDD = 400 V

Figure 9. Maximum total power dissipation

GADG190720191329PDT

500

400

300

200

100

0-75 -25 25 75 125 175

PTOT (W)

TC (°C)

TJ = 175 °C

Figure 10. Typical drain-source on-resistance

GADG110720191025RID

20

19

18

17

16

150 20 40 60 80 100 ID (A)

VGS = 18 V

RDS(on)(mΩ)

Figure 11. Normalized on-resistance vs temperature

GADG190720191331RON

1.6

1.4

1.2

1

0.8-75 -25 25 75 125 175

RDS(on) (norm.)

TJ (°C)

VGS = 18 V

Figure 12. Normalized gate threshold voltage vstemperature

GADG190720191331VTH

1.4

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175

VGS(th) (norm.)

TJ (°C)

ID = 250 µA

SCTH90N65G2V-7Electrical characteristics (curves)

DS12084 - Rev 4 page 6/14

Figure 13. Normalized breakdown voltage vs temperature

GADG190720191332BDV

1.06

1.04

1.02

1.00

0.98

0.96-75 -25 25 75 125 175

V(BR)DSS (norm.)

TJ (°C)

ID = 1 mA

Figure 14. Typical switching energy vs drain current

GADG110720191040SDC

600

500

400

300

200

100

020 30 40 50 60 70 ID (A)

Etot

Eoff

Eon

VDD = 400 V

RG = 2.2 ΩVGS = -5 to 18 V

(µJ)E

Figure 15. Typical switching energy vs temperature

GADG190720191335SLT

360

300

240

180

120

60

0-25 25 75 125 175 TJ (°C)

(µJ)E

VDD = 400 V, ID = 50 A,VGS = -5 to 18 V, RG = 2.2 Ω

Etot

Eoff

Eon

Figure 16. Typical reverse conduction characteristics(TJ = -50 °C)

GADG110720191046RCC_-50

-20

-40

-60

-80

-100

-120

-140-6 -5 -4 -3 -2 -1 VDS (V)

VGS =15VVGS =10VVGS =5V

VGS =0V

VGS =-3, -5V

ID (A)

Figure 17. Typical reverse conduction characteristics(TJ = 25 °C)

GADG110720191043RCC_25

-20

-40

-60

-80

-100

-120

-140-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =15V

VGS =10V

VGS =-5, -3V

VGS =5VVGS =0V

Figure 18. Typical reverse conduction characteristics(TJ = 150 °C)

GADG110720191048RCC_150

-20

-40

-60

-80

-100

-120

-140-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =10V

VGS =15VVGS =5V

VGS =0V

VGS =-3, -5V

SCTH90N65G2V-7Electrical characteristics (curves)

DS12084 - Rev 4 page 7/14

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

3.1 H²PAK-7 package information

Figure 19. H²PAK-7 package outline

DM00249216_4

SCTH90N65G2V-7Package information

DS12084 - Rev 4 page 8/14

Table 8. H²PAK-7 package mechanical data

Dim.mm

Min. Max.

A 4.30 4.80

A1 0.03 0.20

C 1.17 1.37

e 2.34 2.74

e1 4.88 5.28

e2 7.42 7.82

E 0.45 0.60

F 0.50 0.70

H 10.00 10.40

H1 7.40 7.60

L 14.75 15.25

L1 1.27 1.40

L2 4.35 4.95

L3 6.85 7.25

M 1.90 2.50

R 0.20 0.60

V 0° 8°

Figure 20. H²PAK-7 recommended footprint

footprint_DM00249216_4

Note: Dimensions are in mm.

SCTH90N65G2V-7H²PAK-7 package information

DS12084 - Rev 4 page 9/14

3.2 Packing information

Figure 21. Tape outline

P1A0 D1

P0

FW

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

Top covertape

AM08852v2

SCTH90N65G2V-7Packing information

DS12084 - Rev 4 page 10/14

Figure 22. Reel outline

A

D

B

Full radius

Tape slotIn core for

Tape start

G measured

At hub

C

N

REEL DIMENSIONS

40 mm min.

Access hole

At slot location

T

Table 9. Tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

SCTH90N65G2V-7Packing information

DS12084 - Rev 4 page 11/14

Revision history

Table 10. Document revision history

Date Revision Changes

30-Mar-2017 1 First release

28-Jun-2018 2

Updated cover page.

Updated Section 2 Electrical characteristics and Section 3 Packageinformation.

Minor text changes.

22-Jan-2019 3

Updated title and features on cover page.

Updated Table 1. Absolute maximum ratings.

Updated Section 2 Electrical characteristics and Section 2.1 Electricalcharacteristics (curves).

Minor text changes.

19-Jul-2019 4

Updated Section 1 Electrical ratings.

Updated Section 2 Electrical characteristics and Section 2.1 Electricalcharacteristics (curves).

Minor text changes.

SCTH90N65G2V-7

DS12084 - Rev 4 page 12/14

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

3.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

SCTH90N65G2V-7Contents

DS12084 - Rev 4 page 13/14

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

SCTH90N65G2V-7

DS12084 - Rev 4 page 14/14