designing stability into 1296 mhz and 2304 mhz low noise ... · using an atf-36077 followed by an...
TRANSCRIPT
Optical Navigation Division
Designing Stability into 1296 MHz and2304 MHz Low Noise Amplifiers
By Al Ward W5LUA & Tommy Henderson WD5AGO
July 28, 2007
Central States VHF Society
San Antonio, Texas
Page 2
Wireless Semiconductor Division
What do we want from an LNA?
Low noise figure < 0.4 dB
High gain > 35 dB
Good input and output match – minimizes interactions withother stages
Stable – must not oscillate when connected to antenna
Cascadable
Page 3
Wireless Semiconductor Division
What makes a good second stage?
Low noise figure < 0.8 dB NF
Enough gain to make cascade about 30 to 35 dB
Good broadband match for first stage
Stable
Page 4
Wireless Semiconductor Division
Today’s Transistors
Today’s transistors have very low noise figures andvery high gain
High gain contributes to stability problems anddecreased input intercept point
Minimum input VSWR and minimum noise figure willgenerally not occur simultaneously with samematching network. Use of source inductance may helpbut too much may cause instability
Page 5
Wireless Semiconductor Division
ATF-3XXXX Series of PHEMTsDepletion mode PHEMT technology – requires negativevoltage on gate wrt source
Ceramic and plastic surface mount packaging
Various gate widths 200u / 400u / 800u / 1600 u
At lower frequencies, I.e. 2 GHz or less, larger gate widthsoffer lower gain and lower impedances which cancontribute to improved stability and lower matching circuitlosses
360
G
D
SSATF-36077 – 200 u
ATF-35143 – 400 uATF-34143 – 800 uATF-33143 – 1600 u
Page 6
Wireless Semiconductor Division
ATF-5XXXX Series of PHEMTs
Enhancement mode PHEMT technology – requires positivevoltage on gate wrt source
Plastic surface mount packaging
Various gate widths 400u / 800u and larger
Noise figure of enhancement mode devices 0.1 to 0.2 dBhigher than depletion mode devices
ATF-55143 – 400 uATF-54143 – 800 u
Page 7
Wireless Semiconductor Division
What about S-parameters?!??!
A three-terminal two-port, such as theFET shown, has four S-parameters.
Snn = voltage reflection coefficient,both amplitude and phase relative to50source impedance
S21 and S12 are commonly displayed ona polar chart.
S11 = input displayed on Smith chart
S22 = output displayed on Smith chart
S21
S12
S11S22
Polar chart Smith chart
Page 8
Wireless Semiconductor Division
What about Noise Parameters?!??!
o (Gamma Opt) is the reflectioncoefficient of the source impedancepresented to the device that allowsthe device to produce its’ fmin
Matching circuit losses often limit theability of the amplifier to achieve anoise figure equivalent to device fmin
o not necessarily equal to S11* whichmeans noise match is not equivalentto a gain match
Rn (Noise Resistance) is used tocalculate the device’s sensitivity innoise figure to changes in sourceimpedance, rn is normalized to 50 .
For minimum NF, in = oFor maximum gain, in = S11*
in
Q1
Impedance MatchingNetwork
Page 9
Wireless Semiconductor Division
Other measures of input characteristicsVSWR = Voltage Standing Wave Ratio
Return Loss
Mismatch Loss
1
1VSWR
2log10RL
ML = 10 LOG (1 - 2)
Page 10
Wireless Semiconductor Division
Input Impedance Match
Match to opt for minimumnoise figure
Noise degrades in circularcontours as match moves awayfrom opt
Degree of noise degradation isdependent on Rn, the noiseresistance
Most amateur applications aimfor minimum noise figure andaccept input VSWR
S11*
opt
in
Q1
Impedance MatchingNetwork
Page 11
Wireless Semiconductor Division
Simultaneous Input VSWR and Noise Match
new S11*
newopt
Adding source inductancerotates opt towards S11*
Source inductance is seriesfeedback which effects gain andstability
Its’ effect must be analyzed overas a wide a bandwidth as thedevice has gain
Page 12
Wireless Semiconductor Division
Output Impedance Match
S22’* = L is the reflection coefficient of
the output matching network withinput terminated in opt, not 50
Match to S22’* = L for best gain/output
VSWR
LNA may not be unconditionallystable when matched for best outputVSWR - Some resistive loading maybe required to reduce gain to improvestability
Best output VSWR does notnecessarily guarantee best P1dB andIP3.
S22*
S22'*
L = S22 + S12 S21 o1 - S11 o
*
Page 13
Wireless Semiconductor Division
Using AppCAD for Circuit Analysis
http://www.avagotech.comAvailable for freedownload at
Page 14
Wireless Semiconductor Division
ATF-36077 vs ATF-33143 Stability Factors vs Freq.Stability Factor Kcalculated from S
parameters at eachfrequency, K>1 for
unconditional stability
ATF-36077 – K < 1 atall frequencies below
10 GHz
ATF-33143 – K < 1only below 4.2 GHz,making the deviceless sensitive to
source grounding –better for VHF LNAs
2112
2222
211
21
SSDSS
K
21122211 SSSSD
Page 15
Wireless Semiconductor Division
ATF-36077 vs ATF-33143S21 vs MAG vs MSG
S21 = 50 Gain
MAG = MaximumAvailable Gainapplies when K>1
MSG = MaximumStable Gain
Page 16
Wireless Semiconductor Division
Contributions to Source Inductance
1. Lead length from edgeof transistor package tobypass cap or platedthrough hole addsinductance2. Use of a source resistorbypass capacitor can altercircuit stability3. The inductanceassociated with the bypasscapacitor and theequivalent inductance dueto the thickness of printedcircuit board
LL LL
PCB
Page 18
Wireless Semiconductor Division
Single stage ATF-36077
2 4 6 8 10 12 14 16 180 20
-30
-20
-10
0
10
20
-40
30
freq, GHz
dB(S
(2,1
))
m1
m1freq=dB(S(2,1))=18.432
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHzS
tabF
act
1
2 4 6 8 10 12 14 16 180 20
-2.5
-2.0
-1.5
-1.0
-0.5
-3.0
0.0
freq, GHz
dB(S
(1,1
))
2 4 6 8 10 12 14 16 180 20
-25
-20
-15
-10
-30
-5
freq, GHz
dB(S
(2,2
))
m2freq=nf(2)=0.349
1.300GHz
0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.9
-0.0
2.0
0.5
0.0
1.0
freq, GHz
nf(2
)
m2
m2freq=nf(2)=0.349
1.300GHz
m1freq=dB(S(2,1))=18.432
1.300GHz
Page 19
Wireless Semiconductor Division
2 Stages ATF-36077 Connected with 4.5 inches of 50ΩCoax
m1freq=dB(S(2,1))=34.703
1.300GHz
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
20
40
-80
60
freq, GHz
dB
(S(2
,1))
m1
m1freq=dB(S(2,1))=34.703
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Sta
bFa
ct1
2 4 6 8 10 12 14 16 180 20
-6
-4
-2
0
-8
2
freq, GHz
dB
(S(1
,1))
2 4 6 8 10 12 14 16 180 20
-25
-20
-15
-10
-5
-30
0
freq, GHz
dB
(S(2
,2))
m2freq=nf(2)=0.354
1.300GHz
0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.9
-0.0
2.0
0.5
0.0
1.0
freq, GHz
nf(
2)
m2
m2freq=nf(2)=0.354
1.300GHz
Simulation suggests potential stability concerns
Page 20
Wireless Semiconductor Division
Better approach is a WD5AGO integrated 2 stage amplifierusing an ATF-36077 followed by an ATF-34143 or ATF-54143
MSTEPStep2
W2=10.0milW1=100.0milSubst="MSub1"
MLINTL13
L=80.0milW=100.0mil
Subst="MSub1"
SRLCSRLC4
C=470.0pFL=.5nHR=.3Ohm
MLIN
TL3
L=700.0milW=10.0milSubst="MSub1"
RR3R=50Ohm
LL1
R=
L=40nH
VIA2
V5
W=25.0milRho=1.0T=0.7mil
H=62.0milD=15.0mil
VIA2
V6
W=25.0milRho=1.0T=0.7mil
H=62.0milD=15.0mil
VIA2
V7
W=25.0milRho=1.0T=0.7mil
H=62.0milD=15.0mil
VIA2
V8
W=25.0milRho=1.0T=0.7mil
H=62.0milD=15.0mil
VIA2V4
W=25.0mil
Rho=1.0T=0.7milH=62.0mil
D=15.0mil
VIA2V3
W=25.0mil
Rho=1.0T=0.7milH=62.0mil
D=15.0mil
VIA2V2
W=25.0mil
Rho=1.0T=0.7milH=62.0mil
D=15.0mil
VIA2V1
W=25.0mil
Rho=1.0T=0.7milH=62.0mil
D=15.0mil
MSUBMSub1
Rough=0mil
TanD=.02T=.7milHu=3.9e+034mil
Cond=1.0E+50Mur=1Er=4.5H=62.0mil
MSub
MLINTL12
L=100.0milW=100.0milSubst="MSub1"
MSTEPStep1
W2=100.0milW1=10.0mil
Subst="MSub1"INDQL3
Rdc=0.0Ohm
Mode=proportional to freqF=100.0MHzQ=50.0
L=220nH
MLINTL4
L=500.0milW=10.0mil
Subst="MSub1"
MLIN
TL5
L=25.0mil
W=20.0milSubst="MSub1"
MLIN
TL6
L=25.0mil
W=20.0milSubst="MSub1"
SRLCSRLC10
C=1000pFL=.5nHR=.3Ohm
RR7
R=75Ohm
RR6R=50Ohm
MLINTL7
L=700.0milW=10.0mil
Subst="MSub1"
SRLCSRLC9
C=470.0pFL=.5nHR=.3Ohm
SRLCSRLC8
C=3.3pFL=.25nHR=.2Ohm
TermTerm2
Noise=yesZ=50OhmNum=2
RR5
R=10Ohm
SRLCSRLC7
C=470pFL=.5nHR=.3Ohm
SRLCSRLC6
C=470pFL=.5nHR=.3Ohm
S2PSNP2
File="C:\S_DATA\FET\f331434e.s2p"
21
Ref
RR4R=50Ohm
MLINTL11
L=150.0milW=80.0milSubst="MSub1"
SRLCSRLC5
C=3.3pFL=.25nHR=.2Ohm
MLINTL10
L=50.0milW=80.0milSubst="MSub1"
MLINTL9
L=100.0milW=80.0milSubst="MSub1"
RR2
R=20Ohm
MLINTL8
L=100.0milW=80.0milSubst="MSub1"
MLIN
TL2
L=15.0mil
W=20.0milSubst="MSub1"
MLIN
TL1
L=15.0mil
W=20.0milSubst="MSub1"
StabFactStabFact1StabFact1=stab_fact(S)
StabFact
RR1R=470Ohm
SRLCSRLC3
C=470.0pF
L=.5nHR=.3Ohm
SRLC
SRLC2
C=7.0pF
L=.25nHR=.2Ohm
S2PSNP1
File="C:\S_DATA\FET\F360772A.S2P"
21
Ref
L
L2
R=L=47nH
SRLCSRLC1
C=3.3pFL=.25nHR=.2Ohm
TermTerm1
Noise=yesZ=50OhmNum=1
Resistive LoadingSource Inductance
Page 21
Wireless Semiconductor Division
ADS Optimized ATF-36077 First Stage
MSUBMSub1
Rough=0 milTanD=.02T=.7 milHu=3.9e+034 milCond=1.0E+50Mur=1Er=4.5H=31mil
MSub
SRLCSRLC4
C=1000pFL=1.4 nHR=.3 Ohm
MLINTL3
L=250 milW=10.0 milSubst="MSub1"
MSTEPStep2
W2=10.0 milW1=150.0 milSubst="MSub1"
MLINTL13
L=150.0 milW=150.0 milSubst="MSub1"
RR3R=50Ohm
SRLCSRLC5
C=10 pFL=.25 nHR=.2 Ohm
SRLCSRLC3
C=1000 pFL=1.4 nHR=.3 Ohm
RR1R=50 Ohm
SRLCSRLC2
C=10.0pFL=.25 nHR=.2 Ohm
MLINTL2
L=5.0 milW=20.0 milSubst="MSub1"
MLINTL1
L=5.0 milW=20.0 milSubst="MSub1"
RR2R=10 Ohm
MLINTL8
L=50.0 milW=50.0 milSubst="MSub1"
MLINTL9
L=50.0 milW=80.0 milSubst="MSub1"
VIA2V4
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V3
W=25.0milRho=1.0T=0.7 milH=31.0milD=15.0mil
VIA2V2
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V1
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
LL1
R=L=40 nH
MLINTL10
L=50.0 milW=80.0 milSubst="MSub1"
S2PSNP1File="C:\S_DATA\FET\F360772A.S2P"
21
Ref
LL2
R=L=47 nH
SRLCSRLC1
C=3.3 pFL=.25 nHR=.2 Ohm
TermTerm1
Noise=yesZ=50 OhmNum=1
Page 22
Wireless Semiconductor Division
ADS Optimized ATF-36077 First Stage
1 20 3
0.5
1.01.52.02.5
3.03.54.04.5
0.0
5.0
freq, GHz
nf(2
)
m1
m1freq=nf(2)=0.354
1.300GHz
2 4 6 8 10 12 14 160 18
-20
-15
-10
-5
-25
0
freq, GHz
dB(S
(1,1
))
m3
dB(S
(2,2
))
m4
m3freq=dB(S(1,1))=-2.824
1.300GHzm4freq=dB(S(2,2))=-6.779
1.300GHz
2 4 6 8 10 12 14 160 18
-20
-10
0
10
20
-30
30
freq, GHz
dB(S
(2,1
))
m2m2freq=dB(S(2,1))=22.880
1.300GHz
2 4 6 8 10 12 14 160 18
0123456789
-1
10
freq, GHz
Sta
bFac
t1
m5
m5freq=StabFact1=0.318
910.0MHz
This is about the best that can be had in stability if NF is not to be compromised
Page 23
Wireless Semiconductor Division
Let’s take a look at second stage candidates
ATF-36077 200 u gate width depletion mode device
ATF-21186 750 u gate width depletion mode device
ATF-33143 800 u gate width depletion mode device
ATF-54143 400 u gate width enhancement mode device
Other candidates
Page 24
Wireless Semiconductor Division
Optimized ATF-54143 Second Stage
1 20 3
0.51.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
5.0
freq, GHz
nf(2
)
m1
m1freq=nf(2)=0.492
1.300GHz
2 4 6 8 10 12 14 160 18
-30
-20
-10
-40
0
freq, GHz
dB(S
(1,1
))
m3
dB(S
(2,2
))
m4
m3freq=dB(S(1,1))=-7.908
1.300GHzm4freq=dB(S(2,2))=-14.084
1.300GHz
2 4 6 8 10 12 14 160 18
-10
-5
0
5
10
15
-15
20
freq, GHz
dB(S
(2,1
))
m2m2freq=dB(S(2,1))=15.035
1.300GHz
2 4 6 8 10 12 14 160 18
0123456789
-1
10
freq, GHz
Sta
bFac
t1
m5
m5freq=StabFact1=1.042
400.0MHz
Page 25
Wireless Semiconductor Division
Optimized ATF-54143 Second Stage
MLINTL16
L=50.0 milW=50.0 milSubst="MSub1"
MLINTL12
L=100.0 milW=100.0 milSubst="MSub1"
MLINTL5
L=45.0 milW=20.0 milSubst="MSub1"
MLINTL6
L=45.0 milW=20.0 milSubst="MSub1"
SRLCSRLC5
C=3.3 pFL=.25 nHR=.2 Ohm
MLINTL4
L=500.0 milW=10.0 milSubst="MSub1"
RR4R=100 Ohm
INDQL3
Rdc=0.0 OhmMode=proportional to freqF=100.0 MHzQ=50.0L=100 nH
SRLCSRLC7
C=1000 pFL=1.4 nHR=.3 Ohm
RR8R=10 Ohm
SRLCSRLC8
C=6.8 pFL=.25 nHR=.2 Ohm
MSTEPStep3
W2=10.0 milW1=125.0 milSubst="MSub1"
MLINTL17
L=150.0 milW=150.0 milSubst="MSub1"
SRLCSRLC12
C=10000 pFL=2 nHR=.3 Ohm
RR10R=10 Ohm
MLINTL14
L=50.0 milW=80.0 milSubst="MSub1"
SRLCSRLC11
C=1000 pFL=1.4 nHR=.3 Ohm
MLINTL18
L=250 milW=10.0 milSubst="MSub1"
RR9R=50 Ohm
MLINTL15
L=50.0 milW=80.0 milSubst="MSub1"
MLINTL11
L=100.0 milW=55.0 milSubst="MSub1"
MSTEPStep1
W2=100.0 milW1=10.0 milSubst="MSub1"
VIA2V7
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V8
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V5
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V6
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
S2PSNP2File="C:\S_DATA\FET\af541432d[1].s2p"
21
Ref
Page 26
Wireless Semiconductor Division
ATF-36077 cascaded with improved ATF-54143 Second Stage
SRLCSRLC5
C=1.65pFL=.25nH
R=.2Ohm
MLINTL11
L=100.0mil
W=55.0milSubst="MSub1"
MLINTL10
L=50.0mil
W=80.0milSubst="MSub1"
SRLCSRLC1
C=3.3pFL=.25nH
R=.2Ohm
SRLCSRLC4
C=1000pFL=1.4nHR=.3Ohm
MLINTL3
L=250milW=10.0milSubst="MSub1"
MSTEPStep2
W2=10.0milW1=150.0milSubst="MSub1"
MLINTL13
L=150.0milW=150.0milSubst="MSub1"
R
R3R=50Ohm
SRLCSRLC3
C=1000pFL=1.4nHR=.3Ohm
RR1R=50Ohm
SRLCSRLC2
C=10.0pFL=.25nHR=.2Ohm
MLINTL2
L=5.0milW=20.0milSubst="MSub1"
MLINTL1
L=5.0milW=20.0milSubst="MSub1"
RR2R=10Ohm
MLINTL8
L=50.0mil
W=50.0milSubst="MSub1"
MLINTL9
L=50.0mil
W=80.0milSubst="MSub1"
VIA2V4
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
VIA2V3
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
VIA2V2
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
VIA2V1
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
LL1
R=L=40nH
S2P
SNP1File="C:\S_DATA\FET\F360772A.S2P"
21
Ref
LL2
R=L=47nH
MLINTL16
L=50.0milW=50.0milSubst="MSub1"
MLINTL12
L=100.0milW=100.0milSubst="MSub1"
MLINTL5
L=45.0milW=20.0milSubst="MSub1"
MLINTL6
L=45.0milW=20.0milSubst="MSub1"
MLINTL4
L=500.0mil
W=10.0milSubst="MSub1"
RR4R=100Ohm
INDQL3
Rdc=0.0OhmMode=proportional to freqF=100.0MHzQ=50.0
L=100nH
SRLC
SRLC7
C=1000pFL=1.4nHR=.3Ohm
RR8R=10Ohm
SRLCSRLC8
C=6.8pFL=.25nH
R=.2Ohm
MSTEPStep3
W2=10.0milW1=125.0milSubst="MSub1"
MLINTL17
L=150.0milW=150.0milSubst="MSub1"
SRLCSRLC12
C=10000pFL=2nHR=.3Ohm
RR10R=10Ohm
MLINTL14
L=50.0mil
W=80.0milSubst="MSub1"
TermTerm2
Noise=yesZ=50OhmNum=2
SRLCSRLC11
C=1000pFL=1.4nHR=.3Ohm
MLINTL18
L=250milW=10.0milSubst="MSub1"
R
R9R=50Ohm
MLINTL15
L=50.0mil
W=80.0milSubst="MSub1"
MSTEPStep1
W2=100.0mil
W1=10.0milSubst="MSub1"
VIA2V7
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
VIA2V8
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
VIA2V5
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
VIA2V6
W=25.0milRho=1.0T=0.7milH=31.0milD=15.0mil
S2P
SNP2File="C:\S_DATA\FET\af541432d[1].s2p"
21
Ref
MSUBMSub1
Rough=0milTanD=.02T=.7mil
Hu=3.9e+034milCond=1.0E+50Mur=1Er=4.5H=31mil
MSub
TermTerm1
Noise=yesZ=50OhmNum=1
Page 27
Wireless Semiconductor Division
ATF-36077 cascaded with improved ATF-54143 Second Stage
1 20 3
0.51.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
5.0
freq, GHz
nf(2
)
m1
m1freq=nf(2)=0.359
1.300GHz
2 4 6 8 10 12 14 160 18
-30
-20
-10
0
-40
10
freq, GHz
dB(S
(1,1
))
m3
dB(S
(2,2
)) m4
m3freq=dB(S(1,1))=-4.904
1.300GHzm4freq=dB(S(2,2))=-12.991
1.300GHz
2 4 6 8 10 12 14 160 18
-20
0
20
-40
40
freq, GHz
dB(S
(2,1
))
m2
m2freq=dB(S(2,1))=37.878
1.300GHz
2 4 6 8 10 12 14 160 18
0123456789
-1
10
freq, GHz
Sta
bFac
t1
m5
m5freq=StabFact1=-0.202
1.590GHz
Still some concern about stability
Page 28
Wireless Semiconductor Division
ATF-36077 ATF-54143 Cascade with Further Improvements
MLINTL2
L=15.0milW=20.0mil
Subst="MSub1"
MLINTL1
L=15.0milW=20.0mil
Subst="MSub1"
SRLCSRLC5
C=3.3pFL=.25nHR=.2Ohm
R
R3R=100Ohm
RR2R=27Ohm
MSTEPStep1
W2=100.0milW1=20.0milSubst="MSub1"
MTEE_ADSTee2
W3=50.0milW2=20.0milW1=50.0milSubst="MSub1"
MLINTL4
L=300.0milW=20.0milSubst="MSub1"
INDQ
L3
Rdc=0.0Ohm
Mode=proportional to freqF=100.0MHzQ=50.0L=47nH
MLINTL21
L=10.0milW=50.0milSubst="MSub1"
SRLCSRLC7
C=1000pFL=1.4nHR=.3Ohm
RR4R=50Ohm
MLINTL11
L=50.0milW=50.0milSubst="MSub1"
MLINTL12
L=100.0milW=50.0milSubst="MSub1"
MLINTL5
L=45.0milW=20.0mil
Subst="MSub1"
MLINTL6
L=45.0milW=20.0mil
Subst="MSub1"
MLINTL3
L=200milW=10.0milSubst="MSub1"
MSTEPStep2
W2=10.0milW1=100.0milSubst="MSub1"
MLINTL13
L=100.0milW=100.0milSubst="MSub1"
SRLCSRLC4
C=1000pFL=1.4nHR=.3Ohm
MLINTL20
L=10.0milW=50.0milSubst="MSub1"
MTEE_ADSTee1
W3=50.0mil
W2=50.0milW1=50.0milSubst="MSub1"
MLINTL10
L=50.0milW=50.0milSubst="MSub1"
MLINTL9
L=50.0milW=50.0milSubst="MSub1"
MLINTL8
L=50.0milW=50.0milSubst="MSub1"
MLIN
TL19
L=50.0milW=50.0milSubst="MSub1"
RR1R=50Ohm
SRLCSRLC3
C=1000pFL=1.4nHR=.3Ohm
SRLCSRLC1
C=5.6pFL=.25nHR=.2Ohm
SRLCSRLC2
C=10.0pFL=.25nH
R=.2Ohm
VIA2
V4
W=25.0milRho=1.0T=0.7mil
H=31.0milD=15.0mil
VIA2
V3
W=25.0milRho=1.0T=0.7mil
H=31.0milD=15.0mil
VIA2
V2
W=25.0milRho=1.0T=0.7mil
H=31.0milD=15.0mil
VIA2
V1
W=25.0milRho=1.0T=0.7mil
H=31.0milD=15.0mil
LL1
R=
L=40nH
S2PSNP1File="C:\S_DATA\FET\F360772A.S2P"
21
Ref
LL2
R=L=47nH
MLINTL16
L=50.0milW=50.0milSubst="MSub1"
RR8R=10Ohm
SRLCSRLC8
C=6.8pFL=.25nHR=.2Ohm
MSTEPStep3
W2=10.0milW1=125.0milSubst="MSub1"
MLINTL17
L=150.0mil
W=150.0milSubst="MSub1"
SRLCSRLC12
C=10000pFL=2nH
R=.3Ohm
R
R10R=10Ohm
MLINTL14
L=50.0milW=80.0milSubst="MSub1"
Term
Term2
Noise=yesZ=50OhmNum=2
SRLCSRLC11
C=1000pFL=1.4nHR=.3Ohm
MLINTL18
L=250milW=10.0milSubst="MSub1"
RR9R=50Ohm
MLINTL15
L=50.0milW=80.0milSubst="MSub1"
VIA2V7
W=25.0milRho=1.0
T=0.7milH=31.0milD=15.0mil
VIA2V8
W=25.0milRho=1.0
T=0.7milH=31.0milD=15.0mil
VIA2V5
W=25.0milRho=1.0
T=0.7milH=31.0milD=15.0mil
VIA2V6
W=25.0milRho=1.0
T=0.7milH=31.0milD=15.0mil
S2PSNP2File="C:\S_DATA\FET\af541432d[1].s2p"
21
Ref
MSUBMSub1
Rough=0milTanD=.02T=.7milHu=3.9e+034milCond=1.0E+50
Mur=1Er=4.5H=31mil
MSub
Term
Term1
Noise=yesZ=50OhmNum=1
Page 29
Wireless Semiconductor Division
ATF-36077 ATF-54143 Cascade with Further Improvements
1 20 3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
5.0
freq, GHz
nf(2
)
m1
m1freq=nf(2)=0.377
1.300GHz
2 4 6 8 10 12 14 160 18
-20
-10
-30
0
freq, GHz
dB
(S(1
,1))
m3
dB
(S(2
,2))
m4
m3freq=dB(S(1,1))=-4.413
1.300GHzm4freq=dB(S(2,2))=-16.431
1.300GHz
2 4 6 8 10 12 14 160 18
-20
0
20
-40
40
freq, GHz
dB(S
(2,1
))
m2
m2freq=dB(S(2,1))=34.240
1.300GHz
2 4 6 8 10 12 14 160 18
0123
4567
89
-1
10
freq, GHz
Sta
bF
act1
m5m5freq=StabFact1=1.049
1.830GHz
At this point Rd = 27 ohms to get K=1 but NF .377. This is the best that can bedone with ATF-36077 driving ATF-54143….
Page 30
Wireless Semiconductor Division
What would make a better second stage?
Maybe a MMIC
The WLAN and WiMAX markets have forced semiconductormanufacturers to build sub 1 dB noise figure MMICs – thesemight make a good second stage but..
Most are in nasty little hard to see packages with no leadsexcept maybe the MGA-61563………
Page 31
Wireless Semiconductor Division
Effects of 2nd Stage
System NF with 13 dB gain 1st Stage
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.75
1.25 2
0.75
1.25 2
0.75
1.25 2
2nd Stage NF
dB NFs
0.60.60.60.50.50.50.40.40.4
1st NF
Page 32
Wireless Semiconductor Division
MGA-61563 Low Noise Amplifier
.01 uF
47 nH
47 pF
10
3V @ 43 mA
47 pF 47 pFMGA-61563
Input Output
1,2,5
63
4
510
Page 33
Wireless Semiconductor Division
MGA-61563 Measured Demo Board Performance
1 2 30 4
0.2
0.40.60.8
1.0
1.21.41.6
1.8
0.0
2.0
freq, GHz
nf(
2) m1
m2
m1freq=nf(2)=0.840
800.0MHzm2freq=nf(2)=1.250
3.500GHz
1 2 3 4 50 6
-30
-20
-10
-40
0
freq, GHz
dB(S
(1,1
))
m5 m6
dB(S
(2,2
))
m7
m8
m5freq=dB(S(1,1))=-9.629
800.0MHzm6freq=dB(S(1,1))=-8.164
3.500GHz
m7freq=dB(S(2,2))=-13.560
3.500GHzm8freq=dB(S(2,2))=-32.164
800.0MHz
1 2 3 4 50 6
5
10
15
20
0
25
freq, GHz
dB
(S(2
,1))
m3
m4
m3freq=dB(S(2,1))=20.411
800.0MHzm4freq=dB(S(2,1))=12.161
3.500GHz
1 2 3 4 50 6
0123456789
-1
10
freq, GHz
Sta
bF
act1
Not bad for a MMIC!
Page 34
Wireless Semiconductor Division
ADS Simulation with ATF-36077 MGA-61563 Cascade
m1freq=nf(2)=0.348
1.300GHz
1 20 3
0.5
1.0
1.52.0
2.5
3.03.5
4.0
4.5
0.0
5.0
freq, GHz
nf(2
)
m1
m1freq=nf(2)=0.348
1.300GHzm3freq=dB(S(1,1))=-5.586
1.300GHzm4freq=dB(S(2,2))=-18.873
1.300GHz
2 4 6 8 10 12 14 160 18
-30
-20
-10
-40
0
freq, GHz
dB
(S(1
,1))
m3
dB
(S(2
,2)) m4
m3freq=dB(S(1,1))=-5.586
1.300GHzm4freq=dB(S(2,2))=-18.873
1.300GHz
m2freq=dB(S(2,1))=39.296
1.300GHz
2 4 6 8 10 12 14 160 18
-20
0
20
40
-40
60
freq, GHz
dB(S
(2,1
))
m2 m2freq=dB(S(2,1))=39.296
1.300GHzm5freq=StabFact1=1.253
2.950GHz
2 4 6 8 10 12 14 160 18
0123456789
-1
10
freq, GHz
Sta
bFac
t1
m5
m5freq=StabFact1=1.253
2.950GHz
I don’t believe K is a problem at 16 GHz but if it is a little Rd will help
Page 35
Wireless Semiconductor Division
ADS Simulation with ATF-36077 MGA-61563 Cascade
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.91.0 2.0
-30
-20
-10
-40
0
freq, GHz
dB(S
(1,1
))m6
dB(S
(2,2
)) m7
m6freq=dB(S(1,1))=-5.586
1.300GHzm7freq=dB(S(2,2))=-18.873
1.300GHz
Page 36
Wireless Semiconductor Division
ADS Simulation with ATF-36077 MGA-61563 Cascade
RR2R=0Ohm
MLINTL2
L=15.0milW=20.0 milSubst="MSub1"
MLINTL1
L=15.0milW=20.0 milSubst="MSub1"
RR3R=75Ohm INDQ
L4
Rdc=0.0 OhmMode=proportional to freqF=100.0 MHzQ=50.0L=22 nH
SRLCSRLC13
C=5.6 pFL=.25nHR=.2 Ohm
SRLCSRLC14
C=100 pFL=1.4nHR=.5 Ohm
SRLCSRLC15
C=10000pFL=1.4nHR=.5 Ohm
RR12R=10 Ohm
MLINTL25
L=10.0 milW=50.0 milSubst="MSub1"
MTEE_ADSTee3
W3=50.0 milW2=50.0 milW1=50.0 milSubst="MSub1"
MLINTL26
L=50.0milW=50.0 milSubst="MSub1"
MLINTL24
L=50.0 milW=50.0 milSubst="MSub1"
TermTerm2
Noise=yesZ=50 OhmNum=2
SRLCSRLC5
C=10 pFL=.25nHR=.2 Ohm
S2PSNP3File="C:\S_DATA\MGA-61563\m615633c[1].s2p"
21
Ref
MLINTL23
L=50.0 milW=50.0milSubst="MSub1"
MLINTL22
L=50.0milW=50.0 milSubst="MSub1"
VIA2V10
W=25.0 milRho=1.0T=0.7milH=31.0 milD=15.0 mil
VIA2V9
W=25.0 milRho=1.0T=0.7milH=31.0 milD=15.0 mil
MLINTL3
L=200 milW=10.0milSubst="MSub1"
MSTEPStep2
W2=10.0 milW1=100.0 milSubst="MSub1"
MLINTL13
L=100.0 milW=100.0milSubst="MSub1"
SRLCSRLC4
C=1000pFL=1.4 nHR=.3Ohm
MLINTL20
L=10.0 milW=50.0 milSubst="MSub1"
MTEE_ADSTee1
W3=50.0 milW2=50.0 milW1=50.0 milSubst="MSub1"
MLINTL10
L=50.0milW=50.0 milSubst="MSub1"
MLINTL9
L=50.0 milW=50.0milSubst="MSub1"
MLINTL8
L=50.0milW=50.0 milSubst="MSub1"
MLINTL19
L=50.0milW=50.0 milSubst="MSub1"
RR1R=50Ohm
SRLCSRLC3
C=1000 pFL=1.4 nHR=.3 Ohm
SRLCSRLC1
C=5.6 pFL=.25 nHR=.2 Ohm
SRLCSRLC2
C=10.0 pFL=.25 nHR=.2 Ohm
VIA2V4
W=25.0milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V3
W=25.0 milRho=1.0T=0.7milH=31.0 milD=15.0 mil
VIA2V2
W=25.0 milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
VIA2V1
W=25.0milRho=1.0T=0.7 milH=31.0 milD=15.0 mil
LL1
R=L=40 nH
S2PSNP1File="C:\S_DATA\FET\F360772A.S2P"
21
Ref
LL2
R=L=47nH
MSUBMSub1
Rough=0 milTanD=.02T=.7milHu=3.9e+034milCond=1.0E+50Mur=1Er=4.5H=31 mil
MSub
TermTerm1
Noise=yesZ=50 OhmNum=1
This is the approach taken for a new WD5AGO LNA
Page 38
Wireless Semiconductor Division
2 Stage ATF-36077 & MGA-61563 #1 Measured Results
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
20
-80
40
freq, GHz
dB(S
(2,1
))
m1
dB(S
(1,2
))m1freq=dB(S(2,1))=37.832
1.300GHz
2 4 6 8 10 12 14 16 180 20
-30
-20
-10
-40
0
freq, GHz
dB
(S(1
,1))
m2
dB
(S(2
,2))
m3
m2freq=dB(S(1,1))=-5.342
1.300GHzm3freq=dB(S(2,2))=-12.117
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Sta
bFac
t1
0.6 1.1 1.6 2.1 2.6 3.1 3.60.1 4.0
0
1
2
3
4
-1
5
freq, GHzS
tabF
act1
m4
m4freq=StabFact1=0.971
1.510GHz
NF measured 0.35 dB at 1296 MHz. K at low frequency erroneous due to lack of S12 dueto poor dynamic range in test equipment. Tough when LNA has 37 dB gain!
Page 39
Wireless Semiconductor Division
AP Note 1228 Single Stage ATF-36077 Measured Results
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
-80
20
freq, GHz
dB(S
(2,1
))
m1
dB(S
(1,2
))
m1freq=dB(S(2,1))=17.846
1.300GHz
2 4 6 8 10 12 14 16 180 20
-30
-20
-10
-40
0
freq, GHz
dB(S
(1,1
))
m2
dB(S
(2,2
)) m3
m2freq=dB(S(1,1))=-1.967
1.300GHzm3freq=dB(S(2,2))=-19.019
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Stab
Fact
1
0.6 1.1 1.6 2.1 2.6 3.1 3.60.1 4.0
0
1
2
3
4
-1
5
freq, GHz
Sta
bFac
t1
m4
m4freq=StabFact1=0.611
980.0MHz
Page 40
Wireless Semiconductor Division
2 Stage ATF-36077 & MGA-61563 in Enclosure
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
20
-80
40
freq, GHz
dB(S
(2,1
))
m1
dB(S
(1,2
))
m1freq=dB(S(2,1))=34.240
1.300GHz
2 4 6 8 10 12 14 16 180 20
-30
-20
-10
0
-40
10
freq, GHz
dB(S
(1,1
))
m2
dB(S
(2,2
))
m3
m2freq=dB(S(1,1))=-3.452
1.300GHzm3freq=dB(S(2,2))=-8.710
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Stab
Fact
1
0.6 1.1 1.6 2.1 2.6 3.1 3.60.1 4.0
0
1
2
3
4
-1
5
freq, GHz
Sta
bFac
t1
m4
m4freq=StabFact1=3.027
980.0MHz
Page 41
Wireless Semiconductor Division
2 Stage ATF-36077 & MGA-61563 in Enclosurewithout Lid
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
20
-80
40
freq, GHz
dB(S
(2,1
))m1
dB(S
(1,2
))
m1freq=dB(S(2,1))=34.841
1.300GHz
2 4 6 8 10 12 14 16 180 20
-20
-15
-10
-5
-25
0
freq, GHz
dB(S
(1,1
))
m2
dB(S
(2,2
))
m3
m2freq=dB(S(1,1))=-3.136
1.300GHzm3freq=dB(S(2,2))=-6.894
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Sta
bFac
t1
0.6 1.1 1.6 2.1 2.6 3.1 3.60.1 4.0
0
1
2
3
4
-1
5
freq, GHz
Sta
bFac
t1
m4
m4freq=StabFact1=11.032
980.0MHz
Page 42
Wireless Semiconductor Division
2 Stage ATF-36077 & MGA-61563 in Enclosure withMetal Divider Spanning Length of Box
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
20
-80
40
freq, GHz
dB
(S(2
,1))
m1
dB
(S(1
,2))
m1freq=dB(S(2,1))=33.545
1.300GHz
2 4 6 8 10 12 14 16 180 20
-40
-30
-20
-10
-50
0
freq, GHz
dB(S
(1,1
))
m2
dB(S
(2,2
))
m3
m2freq=dB(S(1,1))=-6.338
1.300GHzm3freq=dB(S(2,2))=-9.515
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Sta
bF
act1
0.6 1.1 1.6 2.1 2.6 3.1 3.60.1 4.0
0
1
2
3
4
-1
5
freq, GHz
Sta
bFac
t1
m4
m4freq=StabFact1=11.831
980.0MHz
Metal divider breaks up waveguide moding effect of box
Page 43
Wireless Semiconductor Division
Original 2 Stage LNA with ATF-36077 and ATF-21186
2 4 6 8 10 12 14 16 180 20
-60
-40
-20
0
20
-80
40
freq, GHz
dB(S
(2,1
))m1
dB(S
(1,2
))
m1freq=dB(S(2,1))=31.148
1.300GHz
2 4 6 8 10 12 14 16 180 20
-25
-20
-15
-10
-5
-30
0
freq, GHz
dB(S
(1,1
))
m2
dB(S
(2,2
))
m3
m2freq=dB(S(1,1))=-3.757
1.300GHzm3freq=dB(S(2,2))=-7.783
1.300GHz
2 4 6 8 10 12 14 16 180 20
0123456789
-1
10
freq, GHz
Stab
Fact
1
0.6 1.1 1.6 2.1 2.6 3.1 3.60.1 4.0
0
1
2
3
4
-1
5
freq, GHz
Stab
Fac
t1
m4
m4freq=StabFact1=2.748
980.0MHz
Page 44
Wireless Semiconductor Division
13cm LNA Th - Tc
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
NE3210
84
ATF36
077
FHC40
NE3258
4
MGF4
953
MGF49
31
CFH800
ATF541
43
NF
dB
8
9
10
11
12
13
14
15
16
17
Gai
n
NF Th NF Tc G Th G Tc TH07
Page 45
Wireless Semiconductor Division
Summary
The MGA-61563 provided the additional gain desired whileproviding a lower noise higher IP3 second stage
LNA noise figures of 0.3 dB and 37 dB of associated gain havebeen demonstrated
Although the ATF-36077 / MGA-61563 cascade has beenshown to provide K greater than 1, the increased gain isproviding new challenges in enclosure design.
Any Questions?