dfn limiter silicon pin diode: dh60035-62n · limiter pin diodes offer a unique capability to...

DFN Limiter Silicon PIN Diode: DH60035-62N Issue Sept 2013

www.cobham.com/microwave

- 1 -

Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.

Electrical Specifications @ 25°C:

Test condition Min Typ Max Unit Breakdown voltage Vbr Ir = 10 µA 25 50 V

Reverse current at 25°C Ir Vr min = 25 V 10 A

Total capacitance CT Vr= 6V, F = 1 MHz 0.2 0.35 pF

Forward series Resistance Rsf If = 10 mA, F=120 MHz 1.0

I region thickness - 2.0 µm

Minority Carrier Lifetime Tl If=10mA, Ir=6mA 25 ns

Thermal resistance DFN 3L2 Rth Pd=1W 40 °C/W

Parameter Symbol Test condition Min Typ Max Unit

Insertion Loss IL Pin=-10dBm F=2 GHz 0.2 dB

Threshold Power Pin th IL=1dB F=2.7 GHz 10 dBm

Leakage Power Pout F=2.7 GHz @ Pin=50dBm 21 dBm

CW Power Pin CW 2.5 W

Features : Power Handling 2.5W CW Low loss up to 10 GHz Low thermal resistance Surface mount package ROHS compliant MSL1 @ 260°C reflow temperature

Description: Limiter PIN Diodes offer a unique capability to handle moderate CW or pulse power. The limiter diode has low loss performances under the threshold power and a power limiting action above. Due to its specific mesa design and its main parameters accurately chosen and tightly controlled, the DH60035-62N diode achieves an excellent compromise withstanding power with low spike and short recovery time as well as low losses under low signal.

Applications: This serie of diodes operate as power dependent variable resistances and provide passive receiver protection (low noise amplifiers, mixers and detectors).

Maximum Ratings :

Parameter Absolute maximum

Operating temperature (Tj) - 55C, +150°C

Storage temperature - 65°C, +150°C

Reverse Voltage 25 V

Dissipated Power @ Tcase (Tj-Tc)/Rth Nota: any operation above these parameters may cause permanent damages.

RoHS

CompliantRoHS

Compliant



- 2 -


Typical performances @ 25°C:

0

5

10

15

20

25

0 10 20 30 40

Pou

t [d

Bm

]

Pin [dBm]

-2,5

-2

-1,5

-1

-0,5

0

0 1 2 3 4 5 6 7 8 9 10

Inse

rtio

n L

oss [

dB

m]

Frequency [GHz]

Vr=0 V

Vr=2 V

Vr=5 V

Vr=10 V

Vr=20 V

-35

-30

-25

-20

-15

-10

-5

0

0 1 2 3 4 5 6 7 8 9 10

In

pu

t R

etu

rn

Lo

ss [

dB

m]

Frequency [GHz]

Vr=0 V

Vr=2 V

Vr=5 V

Vr=10 V

Vr=20 V

-31

-29

-27

-25

-23

-21

-19

-17

-15

0 1 2 3 4 5 6 7 8 9 10

Iso

lati

on

[d

Bm

]

Frequency [GHz]

If=1 mA

If=5 mA

If=10 mA

If=20 mA

If=30 mA



- 3 -


ADS equivalent Circuit: Forward Bias

Reverse Bias



- 4 -


Case style: DFN-3L2 - Package capacitance ≤ 0.10 pF - Package inductance ≤1 nH

Ordering information:

in Bulk : DH60035-62N Tape & Reel, 1000p : DH60035-62NT1; Tape & Reel, 3000p : DH60035-62NT3;

Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013


- 1 -


Case style: DFN-2L1 Package capacitance = 0.10 pF Package inductance ≤1 nH


Part number

Vrmax

(V)

Reverse

current (µA)

Total Capacitance* Ct @ Vr, 1MHz (pF)

Rs

@10 mA ,

120MHz

()

Carrier

Lifetime τl @ If=10 mA,

Ir=6mA (µs)

Thermal resistance Rth

@ Pd=1W (°C/W)

max max Vr(V) typ max max typ max

DH50057-90N 50 10 6 0.45 0.7 0.75 0.06 40

DH50101-90N 100 10 6 0.14 0.18 2.0 0.15 60

DH50103-90N 100 10 6 0.2 0.25 1.5 0.5 45

DH50203-90N 200 10 50 0.2 0.25 1.5 0.5 45

DH50209-90N 200 10 50 0.8 1.1 0.6 1.0 28

DH80041-90N 450 10 50 0.14 0.16 2.0* 2.0 50

DH80050-90N 500 10 50 0.25 0.3 0.8* 2.5 40

* Rs @ 100mA

Ordering information: According the part-number above, delivered in bulk or in tape & reel, with suffix T1 for 1000 p per reel or T3 for 3000 p per reel

Features: - Medium power diode up to 50W - Low series resistance - Low capacitance parasitic - Surface mount package - ROHS compliant - MSL1 @ 260°C reflow temperature

Description: This series is designed for switches where low losses are required for cost effective solution. Diodes use mesa design and oxide or glass passivation.

Applications: Its excellent characteristics allow predictable superior performances in medium power applications such as switches for antennas or filter banks.

Maximum Ratings:




Dissipated Power @ 25°C (Tj-Ta)/Rth W* Nota: any operation above these parameters may cause permanent damages. * Contact on infinite copper heatsink

RoHS

CompliantRoHS

Compliant



- 2 -


Typical Electrical Performances: DH50057-90N

Equivalent Model: Forward Bias

Reverse Bias



- 3 -




Reverse Bias



- 4 -


Typical Electrical Performances: DH50203-90N & DH50103-90N

Equivalent Model: Bondwire Model

Reverse Bias

Forward Bias



- 5 -




Reverse Bias

Forward Bias



- 6 -




Reverse Bias



- 7 -



0,1

1,0

10,0

0 10 20 30 40 50 60 70 80 90 100

Ct

[p

F]

Vr [V]

Ct versus Vr 1 MHz

0,1

1,0

10,0

1 10 100

Rs [

Oh

ms]

If [mA]

Rs versus If 120 MHz

-0,25

-0,2

-0,15

-0,1

-0,05

0

0 1 2 3

Inse

rtio

n L

oss

[dB]

Frequency [GHz]

Insertion Loss10 mA

20 mA

50 mA

100 mA

-50

-40

-30

-20

-10

0 1 2 3

Input

Retu

rn L

oss

[dB]

Frequency [GHz]

Input Return Loss

10 mA20 mA100 mA50 mA


-50

-40

-30

-20

-10

0

0 0,5 1 1,5 2 2,5 3

Isola

tion [dB]

Frequency [GHz]

Isolation

Vr=20 V

Vr=10 V

Vr=35 V

Reverse Bias



- 1 -


Case style: DFN-2L1 Package capacitance = 0.10 pF Package inductance ≤1 nH


Part number

Vrmax

(V)

Reverse

current (µA)

Total Capacitance* Ct @ Vr, 1MHz (pF)

Rs

@10 mA ,

120MHz

()

Carrier

Lifetime τl @ If=10 mA,

Ir=6mA (µs)

Thermal resistance Rth

@ Pd=1W (°C/W)

max max Vr(V) typ max max typ max

DH50057-90N 50 10 6 0.45 0.7 0.75 0.06 40

DH50101-90N 100 10 6 0.14 0.18 2.0 0.15 60

DH50103-90N 100 10 6 0.2 0.25 1.5 0.5 45

DH50203-90N 200 10 50 0.2 0.25 1.5 0.5 45

DH50209-90N 200 10 50 0.8 1.1 0.6 1.0 28

DH80041-90N 450 10 50 0.14 0.16 2.0* 2.0 50

DH80050-90N 500 10 50 0.25 0.3 0.8* 2.5 40

* Rs @ 100mA

Ordering information: According the part-number above, delivered in bulk or in tape & reel, with suffix T1 for 1000 p per reel or T3 for 3000 p per reel

Features: - Medium power diode up to 50W - Low series resistance - Low capacitance parasitic - Surface mount package - ROHS compliant - MSL1 @ 260°C reflow temperature

Description: This series is designed for switches where low losses are required for cost effective solution. Diodes use mesa design and oxide or glass passivation.


Maximum Ratings:




Dissipated Power @ 25°C (Tj-Ta)/Rth W* Nota: any operation above these parameters may cause permanent damages. * Contact on infinite copper heatsink

RoHS

CompliantRoHS

Compliant



- 2 -




Reverse Bias



- 3 -




Reverse Bias



- 4 -


Typical Electrical Performances: DH50203-90N & DH50103-90N


Reverse Bias

Forward Bias



- 5 -




Reverse Bias

Forward Bias



- 6 -




Reverse Bias



- 7 -



0,1

1,0

10,0

0 10 20 30 40 50 60 70 80 90 100

Ct

[p

F]

Vr [V]

Ct versus Vr 1 MHz

0,1

1,0

10,0

1 10 100

Rs [

Oh

ms]

If [mA]


-0,25

-0,2

-0,15

-0,1

-0,05

0

0 1 2 3

Inse

rtio

n L

oss

[dB]

Frequency [GHz]

Insertion Loss10 mA

20 mA

50 mA

100 mA

-50

-40

-30

-20

-10

0 1 2 3

Input

Retu

rn L

oss

[dB]

Frequency [GHz]

Input Return Loss

10 mA20 mA100 mA50 mA


-50

-40

-30

-20

-10

0

0 0,5 1 1,5 2 2,5 3

Isola

tion [dB]

Frequency [GHz]

Isolation

Vr=20 V

Vr=10 V

Vr=35 V

Reverse Bias

Switching Silicon HV PIN Diode: DFN 2L2 package Issue: October 2013


- 1 -



Part number

Max

Reverse Voltage Vr

(V)

Forward

voltage Vf @ If=100mA

(V)

Total Capacitance

Ct @ Vr=50V,

1MHz (pF)

Rs

@200 mA, 120MHz

()

Carrier Lifetime τl

@ If=10 mA,

Ir=6 mA (µs)

Thermal

Resistance Rth @ Pd=1W

(°C/W)

max max typ max max min max

DH80053 500 1.0 0.9 1.0 0.30 2.5 45.0

DH80055 500 1.0 1.0 1.4 0.25 3.0 40.0

DH80080 800 1.0 0.25 0.45 0.75 2.0 45.0

DH80100 1000 1.0 0.35 0.50 0.65 3.0 35.0

DH80102 1000 1.0 0.65 0.85 0.40 4.0 30.0

Case style: DFN-2L2 Package capacitance ≤ 0.10 pF Package inductance ≤1 nH

Ordering information:

According to the part-number above, delivered in bulk or in tape & reel with suffix T1 for 1000 p per reel or T3 for 3000 p per reel

Features: - High voltage diode up to 1000V - Medium power diode up to 50W - Low series resistance - Low capacitance parasitic - Surface mount package - ROHS compliant - MSL1 @ 260°C reflow temperature

Description: The DFN series is designed for switches where low losses are required for cost effective solution. Diodes use glass passivation technology and mesa design.


Maximum Ratings:




Dissipated Power @ Tcase (Tcase-Tj)/Rth W* Nota: any operation above these parameters may cause permanent damages.

* Contact on infinite copper heatsink

RoHS

CompliantRoHS

Compliant



- 2 -


Typical Electrical performances: DH80053-94N

0,1

1

10

0 20 40 60 80 100

Ct

[pF]

Vr [V]

Ct versus Vr 1 MHz

0,1

1

10

1 10 100 1000

Rs

[Oh

ms]

If[mA]


-1

-0,8

-0,6

-0,4

-0,2

0

0 1 2 3

Inse

rtio

n L

oss

[d

B]

Frequency [GHz]

Insertion Loss

If=20 mA

If=50 mAIf=100 mAIf=10 mA

-60

-50

-40

-30

-20

-10

0

0 1 2 3

Inp

ut

Retu

rn L

oss

[d

B]

Frequency [GHz]

Input Return Loss

If=20 mAIf=100 mAIf=50 mAIf=10 mA


-35

-30

-25

-20

-15

-10

-5

0

0 1 2 3

Isola

tion

[d

B]

Frequency [GHz]

Isolation

Vr=10V

Vr=20V

Vr=35V

Reverse Bias



- 3 -



0.1

1

10

0 10 20 30 40 50 60

Ct

[pF]

Vr [V]

Ct versus Vr 1 MHz

0.1

1

10

100

1 10 100

Rs

[Oh

ms]

If [mA]


-45

-40

-35

-30

-25

-20

-15

-10

-5

0

0 1 2 3 4 5 6 7

Inp

ut

Re

turn

Lo

ss [

dB

m]

Frequency [GHz]

Id=1 mA

Id=5 mA

Id=10mA

Id=20 mA

Id=50 mA

Id=100 mA

-1,2

-1

-0,8

-0,6

-0,4

-0,2

0

0 1 2 3 4 5 6 7

Inse

rtio

n L

oss [

dB

m]

Frequency [GHz]

Id=1 mA

Id=5 mA

Id=10mA

Id=20 mA

Id=50 mA

Id=100 mA

Equivalent Model: Forward Bias -30

-25

-20

-15

-10

-5

0

0 1 2 3 4 5 6 7

Iso

lati

on

[d

Bm

]

Frequency [GHz]

Vr=0 V

Vr=5 V

Vr=10 V

Vr=20 V

Vr=35 V

Reverse Bias



- 4 -



0.1

1

10

0 20 40 60 80 100

Ct

[pF]

Vr [V]

Ct versus Vr 1 MHz

0.1

1

10

100

1 10 100

Rs

[Oh

ms]

If [mA]



Reverse Bias

dfn limiter silicon pin diode: dh60035-62n · limiter pin diodes offer a unique capability to...

Documents